JP2016225502A - 基板処理方法および基板処理装置 - Google Patents
基板処理方法および基板処理装置 Download PDFInfo
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- JP2016225502A JP2016225502A JP2015111556A JP2015111556A JP2016225502A JP 2016225502 A JP2016225502 A JP 2016225502A JP 2015111556 A JP2015111556 A JP 2015111556A JP 2015111556 A JP2015111556 A JP 2015111556A JP 2016225502 A JP2016225502 A JP 2016225502A
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- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000003672 processing method Methods 0.000 title claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 62
- 239000007788 liquid Substances 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 41
- 239000008139 complexing agent Substances 0.000 claims abstract description 8
- 239000007800 oxidant agent Substances 0.000 claims abstract description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 239000000126 substance Substances 0.000 description 52
- 239000002253 acid Substances 0.000 description 38
- 239000000243 solution Substances 0.000 description 28
- 238000000034 method Methods 0.000 description 10
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 5
- 229910017604 nitric acid Inorganic materials 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 239000000872 buffer Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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Abstract
【課題】酸難溶性の金属膜に対しても安定したレートでエッチングできる基板処理方法および基板処理装置を提供する。
【解決手段】一実施形態の基板処理方法は、酸化剤、錯化剤、および水(H2O)を含む第一の液体に、基板上に設けられた金属膜を接触させて前記金属膜をエッチングする工程と、前記エッチングを開始した後、水(H2O)を第一の含有割合で含む前記第一の液体に、水(H2O)を前記第一の含有割合よりも大きい第二の含有割合で含む第二の液体を混合する工程と、前記第一の液体と前記第二の液体が混合された液体に、前記基板上に設けられた金属膜または前記基板と異なる基板上に設けられた金属膜を接触させて金属膜をエッチングする工程と、を持つ。
【選択図】図1
Description
Claims (5)
- 酸化剤、錯化剤、および水(H2O)を含む第一の液体に、基板上に設けられた金属膜を接触させて前記金属膜をエッチングする工程と、
前記エッチングを開始した後、水(H2O)を第一の含有割合で含む前記第一の液体に、水(H2O)を前記第一の含有割合よりも大きい第二の含有割合で含む第二の液体を混合する工程と、
前記第一の液体と前記第二の液体が混合された液体に、前記基板上に設けられた金属膜または前記基板と異なる基板上に設けられた金属膜を接触させて金属膜をエッチングする工程と、
を備える基板処理方法。 - 前記第一の液体によりエッチングされる金属膜と、前記第一の液体と前記第二の液体が混合された液体によりエッチングされる金属膜とは、同一の基板に設けられていることを特徴とする請求項1記載の基板処理方法。
- 前記第一の液体によりエッチングされる金属膜はタングステンを含むことを特徴とする請求項1または2記載の基板処理方法。
- 前記第二の液体は純水であること、を特徴とする請求項1乃至3のいずれか一項記載の基板処理方法。
- 基板上に形成された金属膜をエッチングするための、酸化剤、錯化剤、および水(H2O)を含む第一の液体が溜められる第一の容器と、
前記第一の液体中の水(H2O)の含有割合よりも高い含有割合で水を含む第二の液体が溜められる第二の容器と、
前記第二の容器中の前記第二の液体を前記第一容器中の前記第一の液体に混合するための、前記第一および前記第二の容器間に設けられた液体供給路と、
を備えた基板処理装置。
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JP2015111556A JP6454605B2 (ja) | 2015-06-01 | 2015-06-01 | 基板処理方法および基板処理装置 |
US14/989,241 US10014186B2 (en) | 2015-06-01 | 2016-01-06 | Substrate treatment method and substrate treatment apparatus |
US16/012,866 US10529588B2 (en) | 2015-06-01 | 2018-06-20 | Substrate treatment method and substrate treatment apparatus |
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JP2015111556A JP6454605B2 (ja) | 2015-06-01 | 2015-06-01 | 基板処理方法および基板処理装置 |
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JP2016225502A true JP2016225502A (ja) | 2016-12-28 |
JP6454605B2 JP6454605B2 (ja) | 2019-01-16 |
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JP (1) | JP6454605B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10515873B2 (en) | 2017-03-10 | 2019-12-24 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
JP7398969B2 (ja) | 2019-03-01 | 2023-12-15 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6751326B2 (ja) | 2016-09-16 | 2020-09-02 | キオクシア株式会社 | 基板処理装置および半導体装置の製造方法 |
KR102665340B1 (ko) | 2018-09-18 | 2024-05-14 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
US11437250B2 (en) * | 2018-11-15 | 2022-09-06 | Tokyo Electron Limited | Processing system and platform for wet atomic layer etching using self-limiting and solubility-limited reactions |
CN111640661B (zh) * | 2019-03-01 | 2024-01-30 | 东京毅力科创株式会社 | 基板处理方法、基板处理装置以及存储介质 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0339491A (ja) * | 1989-07-07 | 1991-02-20 | Canon Inc | 薄膜エッチング装置 |
JP2001077118A (ja) * | 1999-06-30 | 2001-03-23 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2004003005A (ja) * | 2002-04-24 | 2004-01-08 | Mitsubishi Chemicals Corp | エッチング液及びエッチング方法 |
JP2005045285A (ja) * | 1998-06-25 | 2005-02-17 | Samsung Electronics Co Ltd | 半導体素子の製造方法 |
JP2005506712A (ja) * | 2001-10-23 | 2005-03-03 | サムスン エレクトロニクス カンパニー リミテッド | 配線用エッチング液とこれを利用した配線の製造方法及びこれを利用した薄膜トランジスタアレイ基板の製造方法 |
JP2012501530A (ja) * | 2008-09-01 | 2012-01-19 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | エッチングによる薄層ソーラーモジュールの端部除去 |
JP2014146715A (ja) * | 2013-01-30 | 2014-08-14 | Panasonic Corp | エッチング溶液の成分濃度測定装置およびエッチング溶液管理装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5364510A (en) * | 1993-02-12 | 1994-11-15 | Sematech, Inc. | Scheme for bath chemistry measurement and control for improved semiconductor wet processing |
JPH11121417A (ja) * | 1997-10-09 | 1999-04-30 | Mitsubishi Electric Corp | 半導体基板の処理システムおよび処理方法 |
US6232228B1 (en) | 1998-06-25 | 2001-05-15 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method |
US6140233A (en) | 1998-06-25 | 2000-10-31 | Samsung Electronics Co., Ltd. | Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices thereby |
US7479205B2 (en) * | 2000-09-22 | 2009-01-20 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus |
KR100379824B1 (ko) | 2000-12-20 | 2003-04-11 | 엘지.필립스 엘시디 주식회사 | 식각용액 및 식각용액으로 패턴된 구리배선을 가지는전자기기용 어레이기판 |
JP2003017465A (ja) | 2001-06-29 | 2003-01-17 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
TWI245071B (en) | 2002-04-24 | 2005-12-11 | Mitsubishi Chem Corp | Etchant and method of etching |
US8530359B2 (en) * | 2003-10-20 | 2013-09-10 | Novellus Systems, Inc. | Modulated metal removal using localized wet etching |
JP2006093334A (ja) * | 2004-09-22 | 2006-04-06 | Ses Co Ltd | 基板処理装置 |
KR101160829B1 (ko) | 2005-02-15 | 2012-06-29 | 삼성전자주식회사 | 식각액 조성물 및 박막 트랜지스터 표시판의 제조 방법 |
KR100714311B1 (ko) | 2006-01-27 | 2007-05-02 | 삼성전자주식회사 | 실리콘 표면의 세정용액 및 이를 사용하는 반도체 소자의제조방법들 |
TWI378989B (en) | 2006-09-01 | 2012-12-11 | Taiwan Tft Lcd Ass | Etchant for patterning composite layer and method of fabricating thin film transistor using the same |
US20100095805A1 (en) * | 2008-10-20 | 2010-04-22 | Michilin Prosperity Co., Ltd. | Plate elements for preventing rotary shafts of shredder from bending |
US8143164B2 (en) * | 2009-02-09 | 2012-03-27 | Intermolecular, Inc. | Formation of a zinc passivation layer on titanium or titanium alloys used in semiconductor processing |
JP2013004871A (ja) | 2011-06-20 | 2013-01-07 | Showa Denko Kk | 金属エッチング用組成物、および金属エッチング用組成物を用いた半導体装置の製造方法 |
JP5847454B2 (ja) | 2011-06-23 | 2016-01-20 | キヤノン株式会社 | 被検体情報取得装置、表示制御方法およびプログラム |
JP2013161963A (ja) | 2012-02-06 | 2013-08-19 | Panasonic Corp | 薄膜トランジスタ、薄膜トランジスタの製造方法、及び表示装置 |
-
2015
- 2015-06-01 JP JP2015111556A patent/JP6454605B2/ja active Active
-
2016
- 2016-01-06 US US14/989,241 patent/US10014186B2/en active Active
-
2018
- 2018-06-20 US US16/012,866 patent/US10529588B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0339491A (ja) * | 1989-07-07 | 1991-02-20 | Canon Inc | 薄膜エッチング装置 |
JP2005045285A (ja) * | 1998-06-25 | 2005-02-17 | Samsung Electronics Co Ltd | 半導体素子の製造方法 |
JP2001077118A (ja) * | 1999-06-30 | 2001-03-23 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2005506712A (ja) * | 2001-10-23 | 2005-03-03 | サムスン エレクトロニクス カンパニー リミテッド | 配線用エッチング液とこれを利用した配線の製造方法及びこれを利用した薄膜トランジスタアレイ基板の製造方法 |
JP2004003005A (ja) * | 2002-04-24 | 2004-01-08 | Mitsubishi Chemicals Corp | エッチング液及びエッチング方法 |
JP2012501530A (ja) * | 2008-09-01 | 2012-01-19 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | エッチングによる薄層ソーラーモジュールの端部除去 |
JP2014146715A (ja) * | 2013-01-30 | 2014-08-14 | Panasonic Corp | エッチング溶液の成分濃度測定装置およびエッチング溶液管理装置 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10515873B2 (en) | 2017-03-10 | 2019-12-24 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
US10854534B2 (en) | 2017-03-10 | 2020-12-01 | Toshiba Memory Corporation | Semiconductor device and method for manufacturing same |
US11552000B2 (en) | 2017-03-10 | 2023-01-10 | Kioxia Corporation | Semiconductor device and method for manufacturing same |
JP7398969B2 (ja) | 2019-03-01 | 2023-12-15 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置および記憶媒体 |
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