JP2019067811A - 基板処理装置、基板処理方法およびプログラム - Google Patents
基板処理装置、基板処理方法およびプログラム Download PDFInfo
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- 238000012545 processing Methods 0.000 title claims abstract description 165
- 239000000758 substrate Substances 0.000 title claims abstract description 128
- 238000003672 processing method Methods 0.000 title claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 176
- 239000003112 inhibitor Substances 0.000 claims abstract description 116
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 9
- 239000000377 silicon dioxide Substances 0.000 claims abstract 9
- 229910052681 coesite Inorganic materials 0.000 claims abstract 8
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract 8
- 229910052682 stishovite Inorganic materials 0.000 claims abstract 8
- 229910052905 tridymite Inorganic materials 0.000 claims abstract 8
- 238000001556 precipitation Methods 0.000 claims description 122
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 113
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 104
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 45
- 239000010703 silicon Substances 0.000 claims description 45
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 43
- 239000002253 acid Substances 0.000 claims description 20
- 238000010306 acid treatment Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 9
- 239000007788 liquid Substances 0.000 abstract description 23
- 230000008021 deposition Effects 0.000 abstract description 13
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 13
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 7
- 229910019142 PO4 Inorganic materials 0.000 abstract 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 3
- 239000010452 phosphate Substances 0.000 abstract 3
- 239000000243 solution Substances 0.000 description 105
- 238000000034 method Methods 0.000 description 64
- 230000008569 process Effects 0.000 description 57
- 235000011007 phosphoric acid Nutrition 0.000 description 48
- 230000007246 mechanism Effects 0.000 description 36
- 239000007864 aqueous solution Substances 0.000 description 31
- 238000012546 transfer Methods 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 21
- 238000004140 cleaning Methods 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 11
- 238000001035 drying Methods 0.000 description 10
- 238000011068 loading method Methods 0.000 description 9
- 239000002210 silicon-based material Substances 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 8
- 230000036544 posture Effects 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- -1 silicon ions Chemical class 0.000 description 5
- 230000007723 transport mechanism Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 230000005764 inhibitory process Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000004599 antimicrobial Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 101100493713 Caenorhabditis elegans bath-45 gene Proteins 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- LXPCOISGJFXEJE-UHFFFAOYSA-N oxifentorex Chemical compound C=1C=CC=CC=1C[N+](C)([O-])C(C)CC1=CC=CC=C1 LXPCOISGJFXEJE-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- JTDPJYXDDYUJBS-UHFFFAOYSA-N quinoline-2-carbohydrazide Chemical compound C1=CC=CC2=NC(C(=O)NN)=CC=C21 JTDPJYXDDYUJBS-UHFFFAOYSA-N 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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Abstract
Description
6 ロット処理部
8 基板
23 エッチング処理装置
27 エッチング用の処理槽
43 SiO2析出防止剤供給部
45 内槽(基板処理槽)
46 外槽
47 温調タンク
58 温度計
80 処理室
90 排気部
93 切替弁
94 酸系処理部
95 有機系処理部
100 制御部
Claims (8)
- 基板処理槽でエッチング処理を行うリン酸処理液に混合されるSiO2析出防止剤を供給するSiO2析出防止剤供給部と、
前記リン酸処理液の温度に基づいて前記リン酸処理液に含まれるSiO2析出防止剤濃度を設定し、設定した前記SiO2析出防止剤濃度となるように前記SiO2析出防止剤の供給量を制御する制御部と
を備えることを特徴とする基板処理装置。 - 前記制御部は、
前記SiO2析出防止剤が前記リン酸処理液に混合されていない状態で、前記リン酸処理液のシリコン濃度が所定シリコン濃度以上になると、前記SiO2析出防止剤を供給する
ことを特徴とする請求項1に記載の基板処理装置。 - 前記制御部は、
前記エッチング処理の処理時間に基づいて前記SiO2析出防止剤の供給量を制御する
ことを特徴とする請求項1または2に記載の基板処理装置。 - 前記制御部は、
前記リン酸処理液に含まれる前記SiO2析出防止剤濃度を検出し、
検出された前記SiO2析出防止剤濃度に基づいて前記SiO2析出防止剤の供給量を制御する
ことを特徴とする請求項1から3のいずれか一つに記載の基板処理装置。 - 前記基板処理槽から排出された排気ガス中の酸系物質を除去する酸系処理部と、
前記基板処理槽から排出された排気ガス中の有機系物質を除去する有機系処理部と
を備えることを特徴とする請求項1から4のいずれか一つに記載の基板処理装置。 - 並列に配設された前記酸系処理部または前記有機系処理部に、前記排気ガスを選択的に流入させる切替部
を備える
ことを特徴とする請求項5に記載の基板処理装置。 - 基板処理槽でエッチング処理を行うリン酸処理液に混合されるSiO2析出防止剤を供給する工程と、
前記リン酸処理液の温度に基づいて前記リン酸処理液に含まれるSiO2析出防止剤濃度を設定し、設定した前記SiO2析出防止剤濃度となるように前記SiO2析出防止剤の供給量を制御する工程と
を含むことを特徴とする基板処理方法。 - 請求項7に記載の基板処理方法をコンピュータに実行させる、プログラム。
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JP2017188573A JP6735718B2 (ja) | 2017-09-28 | 2017-09-28 | 基板処理装置、基板処理方法およびプログラム |
US16/143,918 US20190096710A1 (en) | 2017-09-28 | 2018-09-27 | Substrate processing apparatus, substrate processing method and recording medium |
KR1020180115030A KR102560934B1 (ko) | 2017-09-28 | 2018-09-27 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
CN201811139670.6A CN109585337B (zh) | 2017-09-28 | 2018-09-28 | 基板处理装置、基板处理方法以及存储介质 |
JP2020119949A JP6896129B2 (ja) | 2017-09-28 | 2020-07-13 | 基板処理装置、基板処理方法およびプログラム |
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US (1) | US20190096710A1 (ja) |
JP (1) | JP6735718B2 (ja) |
KR (1) | KR102560934B1 (ja) |
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JP7190892B2 (ja) * | 2018-12-12 | 2022-12-16 | 東京エレクトロン株式会社 | 基板処理装置および処理液濃縮方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009206419A (ja) * | 2008-02-29 | 2009-09-10 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2017118092A (ja) * | 2015-08-27 | 2017-06-29 | 株式会社東芝 | 基板処理装置、基板処理方法およびエッチング液 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2864617B2 (ja) * | 1990-02-08 | 1999-03-03 | 日産化学工業株式会社 | 珪弗化水素酸、珪弗化アンモニウム及び高純度シリカの製造法 |
JP3072876B2 (ja) * | 1993-09-17 | 2000-08-07 | 日曹エンジニアリング株式会社 | エッチング液の精製方法 |
US5472562A (en) * | 1994-08-05 | 1995-12-05 | At&T Corp. | Method of etching silicon nitride |
US6158447A (en) * | 1997-09-09 | 2000-12-12 | Tokyo Electron Limited | Cleaning method and cleaning equipment |
JP3891277B2 (ja) * | 2002-05-21 | 2007-03-14 | セイコーエプソン株式会社 | 処理装置および半導体装置の製造方法 |
JP2004301981A (ja) * | 2003-03-31 | 2004-10-28 | Seiichi Nagata | シリコン基板とその形成方法 |
JP5332197B2 (ja) * | 2007-01-12 | 2013-11-06 | 東ソー株式会社 | エッチング用組成物及びエッチング方法 |
US8211810B2 (en) * | 2007-09-21 | 2012-07-03 | Dainippon Screen Mfg. Co., Ltd. | Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution |
JP5829444B2 (ja) * | 2011-07-08 | 2015-12-09 | 株式会社Screenホールディングス | リン酸再生方法、リン酸再生装置および基板処理システム |
JP5752530B2 (ja) * | 2011-08-31 | 2015-07-22 | 倉敷紡績株式会社 | 基板処理装置 |
JP6087063B2 (ja) | 2012-05-01 | 2017-03-01 | 東京エレクトロン株式会社 | エッチング方法、エッチング装置および記憶媒体 |
JP6168709B2 (ja) * | 2012-08-03 | 2017-07-26 | Jfeスチール株式会社 | 晶析装置及び晶析方法 |
KR102204850B1 (ko) * | 2013-03-15 | 2021-01-18 | 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. | 가열된 에칭 용액을 제공하기 위한 시스템 |
JP2015070119A (ja) * | 2013-09-30 | 2015-04-13 | 株式会社Screenホールディングス | 基板処理装置 |
JP6090184B2 (ja) * | 2014-01-27 | 2017-03-08 | 信越半導体株式会社 | 半導体ウェーハの洗浄槽及び貼り合わせウェーハの製造方法 |
JP2015195306A (ja) * | 2014-03-31 | 2015-11-05 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
JP6320868B2 (ja) * | 2014-07-29 | 2018-05-09 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP6244277B2 (ja) * | 2014-08-11 | 2017-12-06 | 東京エレクトロン株式会社 | 基板液処理装置及び基板液処理方法並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体 |
JP6430784B2 (ja) * | 2014-10-31 | 2018-11-28 | 東京エレクトロン株式会社 | 基板液処理装置 |
US10147619B2 (en) * | 2015-08-27 | 2018-12-04 | Toshiba Memory Corporation | Substrate treatment apparatus, substrate treatment method, and etchant |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009206419A (ja) * | 2008-02-29 | 2009-09-10 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
JP2017118092A (ja) * | 2015-08-27 | 2017-06-29 | 株式会社東芝 | 基板処理装置、基板処理方法およびエッチング液 |
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