JP7372364B2 - ウエハ加工方法及びキャリア - Google Patents
ウエハ加工方法及びキャリア Download PDFInfo
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- JP7372364B2 JP7372364B2 JP2022006414A JP2022006414A JP7372364B2 JP 7372364 B2 JP7372364 B2 JP 7372364B2 JP 2022006414 A JP2022006414 A JP 2022006414A JP 2022006414 A JP2022006414 A JP 2022006414A JP 7372364 B2 JP7372364 B2 JP 7372364B2
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- Prior art keywords
- wafer
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- processing method
- gripper
- wafer processing
- Prior art date
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- 238000003672 processing method Methods 0.000 title claims description 42
- 235000012431 wafers Nutrition 0.000 claims description 139
- 238000005507 spraying Methods 0.000 claims description 32
- 238000007654 immersion Methods 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 17
- 239000007921 spray Substances 0.000 claims description 10
- 238000007598 dipping method Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 239000000969 carrier Substances 0.000 claims description 7
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 210000000078 claw Anatomy 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67796—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations with angular orientation of workpieces
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Robotics (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
Description
前記キャリアを回転させて前記ウエハを乾燥させる工程と、を含む。
100 浸漬装置
110 槽体
120 爪部
200 キャリア
210 外カバー
220 グリッパ
230 昇降機構
240 反転機構
250 リンスノズル
260 回転機構
300 噴霧装置
310 処理用ノズル
320 ハウジング
410 搬入アーム
420 移載アーム
Claims (12)
- ウエハ、浸漬装置と、キャリアと、噴霧装置と、反転機構とを用意する工程aと、
水平状態の前記ウエハを反転させて直立状態にする工程bと、
前記ウエハを直立状態で前記浸漬装置に入れて浸漬する工程cと、
前記浸漬装置から前記ウエハを取り出して水平状態にして前記キャリアに載置する工程dと、
前記噴霧装置により前記キャリア上の前記ウエハに薬液を噴霧する工程eと、
前記ウエハをリンスする工程fと、
前記キャリアを回転させて前記ウエハを乾燥させる工程gと、を含み、
前記工程eは、
前記反転機構により前記キャリアを反転させて前記ウエハを直立状態にして前記噴霧装置に入れる工程e1と、
直立状態の前記ウエハに薬液を噴霧する工程e2と、
前記反転機構により前記キャリアを反転させて前記ウエハを水平状態にする工程e3と、を含む、
ウエハ加工方法。 - 前記キャリアは、外カバーと、外カバーに対して相対的に移動可能なグリッパとを備え、
前記工程dにおいて、前記グリッパに前記ウエハを水平状態で載置する、
請求項1に記載のウエハ加工方法。 - 前記工程fにおいて、前記グリッパを前記外カバー内に移動させ、前記外カバー内で前記ウエハをリンスする、
請求項2に記載のウエハ加工方法。 - 前記工程gにおいて、前記グリッパを前記外カバー外に移動させ、前記グリッパを回転させる、
請求項2に記載のウエハ加工方法。 - 前記工程aにおいて、搬入アームをさらに用意し、
前記工程cにおいて、前記搬入アームにより前記ウエハを前記浸漬装置に入れる、
請求項1に記載のウエハ加工方法。 - 前記工程aにおいて、移載アームをさらに用意し、
前記工程dにおいて、前記搬入アームにより前記浸漬装置から前記ウエハを取り出して前記移載アームに移載し、前記移載アームにより前記ウエハを反転させて前記キャリアに水平状態で載置する、
請求項5に記載のウエハ加工方法。 - 前記キャリアから前記ウエハを取り外して搬出する工程hをさらに含む、
請求項5に記載のウエハ加工方法。 - 前記工程hにおいて、前記搬入アームにより前記ウエハを前記キャリアから取り外して搬出する、
請求項7に記載のウエハ加工方法。 - 前記工程aにおいて、搬入アームをさらに用意し、
前記ウエハ加工方法は、前記搬入アームにより前記ウエハを前記キャリアから取り外して搬出する工程hをさらに含む、
請求項1に記載のウエハ加工方法。 - 前記工程aにおいて、複数のウエハと、浸漬装置と、複数のキャリアと、各前記キャリアにそれぞれ対応する複数の噴霧装置とを用意し、
前記工程dにおいて、各前記ウエハをそれぞれ反転させて各前記キャリアに載置し、各前記ウエハに対してそれぞれ各前記キャリアで後続の工程e、工程f及び工程gを行う、
請求項1に記載のウエハ加工方法。 - 前記工程aにおいて、複数の移載アームをさらに用意し、
前記工程dにおいて、各前記移載アームにより前記ウエハを反転させて前記キャリアに載置する、
請求項10に記載のウエハ加工方法。 - 前記工程cにおいて、前記複数のウエハを一括して前記浸漬装置に入れる、
請求項10に記載のウエハ加工方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW110133907A TWI778786B (zh) | 2021-09-11 | 2021-09-11 | 晶圓加工方法及載台 |
TW110133907 | 2021-09-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2023041582A JP2023041582A (ja) | 2023-03-24 |
JP7372364B2 true JP7372364B2 (ja) | 2023-10-31 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022006414A Active JP7372364B2 (ja) | 2021-09-11 | 2022-01-19 | ウエハ加工方法及びキャリア |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230079627A1 (ja) |
EP (1) | EP4148773A1 (ja) |
JP (1) | JP7372364B2 (ja) |
KR (1) | KR102619951B1 (ja) |
TW (1) | TWI778786B (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006004955A (ja) | 2003-05-30 | 2006-01-05 | Ebara Corp | 基板処理装置及び基板処理方法 |
JP2020502778A (ja) | 2016-12-14 | 2020-01-23 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 堆積システム |
US20200126831A1 (en) | 2018-10-22 | 2020-04-23 | Scientech Corporation | Substrate processing system |
WO2020174962A1 (ja) | 2019-02-28 | 2020-09-03 | 株式会社Screenホールディングス | 基板処理方法および基板処理システム |
Family Cites Families (20)
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JPH07176507A (ja) * | 1993-12-20 | 1995-07-14 | Hitachi Ltd | ウエット処理装置およびウエット処理方法 |
TW322605B (ja) * | 1995-12-07 | 1997-12-11 | Tokyo Electron Co Ltd | |
KR100490508B1 (ko) * | 1996-05-20 | 2005-08-04 | 동경 엘렉트론 주식회사 | 스핀드라이어및기판건조방법 |
JP3548373B2 (ja) * | 1997-03-24 | 2004-07-28 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US6068002A (en) * | 1997-04-02 | 2000-05-30 | Tokyo Electron Limited | Cleaning and drying apparatus, wafer processing system and wafer processing method |
JP4426036B2 (ja) * | 1999-12-02 | 2010-03-03 | 東京エレクトロン株式会社 | 基板処理装置 |
JP4180787B2 (ja) * | 2000-12-27 | 2008-11-12 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US6524463B2 (en) * | 2001-07-16 | 2003-02-25 | Technic, Inc. | Method of processing wafers and other planar articles within a processing cell |
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KR20090074556A (ko) * | 2008-01-02 | 2009-07-07 | 주식회사 하이닉스반도체 | 실린더형 스토리지 전극으로부터 희생층을 제거하는 방법 |
TW200933708A (en) * | 2008-01-17 | 2009-08-01 | Ampoc Far East Co Ltd | Method of forming electroplating-free wafer surface |
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TWI645913B (zh) * | 2016-11-10 | 2019-01-01 | 辛耘企業股份有限公司 | 液體製程裝置 |
TWI693627B (zh) * | 2018-11-22 | 2020-05-11 | 辛耘企業股份有限公司 | 流體收集裝置 |
CN112786481A (zh) * | 2019-11-01 | 2021-05-11 | 弘塑科技股份有限公司 | 晶圆湿处理工作站 |
TWM589894U (zh) * | 2019-11-01 | 2020-01-21 | 弘塑科技股份有限公司 | 晶圓濕處理工作站 |
-
2021
- 2021-09-11 TW TW110133907A patent/TWI778786B/zh active
- 2021-09-29 KR KR1020210128422A patent/KR102619951B1/ko active IP Right Grant
-
2022
- 2022-01-13 US US17/575,624 patent/US20230079627A1/en active Pending
- 2022-01-14 EP EP22151641.2A patent/EP4148773A1/en active Pending
- 2022-01-19 JP JP2022006414A patent/JP7372364B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006004955A (ja) | 2003-05-30 | 2006-01-05 | Ebara Corp | 基板処理装置及び基板処理方法 |
JP2020502778A (ja) | 2016-12-14 | 2020-01-23 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 堆積システム |
US20200126831A1 (en) | 2018-10-22 | 2020-04-23 | Scientech Corporation | Substrate processing system |
WO2020174962A1 (ja) | 2019-02-28 | 2020-09-03 | 株式会社Screenホールディングス | 基板処理方法および基板処理システム |
Also Published As
Publication number | Publication date |
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TWI778786B (zh) | 2022-09-21 |
JP2023041582A (ja) | 2023-03-24 |
TW202312329A (zh) | 2023-03-16 |
EP4148773A1 (en) | 2023-03-15 |
KR20230038385A (ko) | 2023-03-20 |
KR102619951B1 (ko) | 2023-12-29 |
US20230079627A1 (en) | 2023-03-16 |
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