JP7366637B2 - ワークの確認方法、及び、加工方法 - Google Patents
ワークの確認方法、及び、加工方法 Download PDFInfo
- Publication number
- JP7366637B2 JP7366637B2 JP2019149312A JP2019149312A JP7366637B2 JP 7366637 B2 JP7366637 B2 JP 7366637B2 JP 2019149312 A JP2019149312 A JP 2019149312A JP 2019149312 A JP2019149312 A JP 2019149312A JP 7366637 B2 JP7366637 B2 JP 7366637B2
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- unit
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- 238000000034 method Methods 0.000 title claims description 21
- 238000012790 confirmation Methods 0.000 title claims description 6
- 238000003672 processing method Methods 0.000 title claims description 3
- 238000003384 imaging method Methods 0.000 claims description 78
- 238000012545 processing Methods 0.000 claims description 54
- 238000001514 detection method Methods 0.000 claims description 11
- 238000007689 inspection Methods 0.000 description 77
- 230000032258 transport Effects 0.000 description 18
- 238000005520 cutting process Methods 0.000 description 16
- 238000012360 testing method Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 238000003754 machining Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000003708 edge detection Methods 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000872198 Serjania polyphylla Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B27/00—Other grinding machines or devices
- B24B27/06—Grinders for cutting-off
- B24B27/0616—Grinders for cutting-off using a tool turning around the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D7/00—Accessories specially adapted for use with machines or devices of the preceding groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019149312A JP7366637B2 (ja) | 2019-08-16 | 2019-08-16 | ワークの確認方法、及び、加工方法 |
KR1020200086504A KR20210020767A (ko) | 2019-08-16 | 2020-07-14 | 워크의 확인 방법, 및, 가공 방법 |
CN202010800580.8A CN112397408A (zh) | 2019-08-16 | 2020-08-11 | 工件的确认方法和加工方法 |
TW109127357A TWI837411B (zh) | 2019-08-16 | 2020-08-12 | 工件之確認方法以及加工方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019149312A JP7366637B2 (ja) | 2019-08-16 | 2019-08-16 | ワークの確認方法、及び、加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021034414A JP2021034414A (ja) | 2021-03-01 |
JP7366637B2 true JP7366637B2 (ja) | 2023-10-23 |
Family
ID=74603042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019149312A Active JP7366637B2 (ja) | 2019-08-16 | 2019-08-16 | ワークの確認方法、及び、加工方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP7366637B2 (zh) |
KR (1) | KR20210020767A (zh) |
CN (1) | CN112397408A (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021203911A1 (de) | 2021-04-20 | 2022-10-20 | Disco Corporation | Verfahren zum bearbeiten eines substrats und ein system zum bearbeiten eines substrats |
CN114577816A (zh) * | 2022-01-18 | 2022-06-03 | 广州超音速自动化科技股份有限公司 | 一种氢燃料双极板检测方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003203883A (ja) | 2002-01-07 | 2003-07-18 | Tokyo Seimitsu Co Ltd | 顕微鏡及び観察方法 |
JP2008045965A (ja) | 2006-08-14 | 2008-02-28 | Yamaha Corp | ウェハの検査方法及びウェハのクラック検査装置 |
JP2014203836A (ja) | 2013-04-01 | 2014-10-27 | 株式会社ディスコ | ターゲットパターン設定方法、及び、キーパターン検出方法 |
JP2019025583A (ja) | 2017-07-28 | 2019-02-21 | 株式会社ディスコ | 切削方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08220008A (ja) * | 1995-02-15 | 1996-08-30 | Mitsubishi Electric Corp | 赤外検査装置 |
JPH10312979A (ja) * | 1997-05-12 | 1998-11-24 | Disco Abrasive Syst Ltd | ウェーハの切削状況の検出方法 |
JP4754864B2 (ja) | 2005-04-25 | 2011-08-24 | 株式会社ディスコ | 切削方法 |
-
2019
- 2019-08-16 JP JP2019149312A patent/JP7366637B2/ja active Active
-
2020
- 2020-07-14 KR KR1020200086504A patent/KR20210020767A/ko active Search and Examination
- 2020-08-11 CN CN202010800580.8A patent/CN112397408A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003203883A (ja) | 2002-01-07 | 2003-07-18 | Tokyo Seimitsu Co Ltd | 顕微鏡及び観察方法 |
JP2008045965A (ja) | 2006-08-14 | 2008-02-28 | Yamaha Corp | ウェハの検査方法及びウェハのクラック検査装置 |
JP2014203836A (ja) | 2013-04-01 | 2014-10-27 | 株式会社ディスコ | ターゲットパターン設定方法、及び、キーパターン検出方法 |
JP2019025583A (ja) | 2017-07-28 | 2019-02-21 | 株式会社ディスコ | 切削方法 |
Also Published As
Publication number | Publication date |
---|---|
TW202109659A (zh) | 2021-03-01 |
CN112397408A (zh) | 2021-02-23 |
KR20210020767A (ko) | 2021-02-24 |
JP2021034414A (ja) | 2021-03-01 |
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