JP7350974B2 - 導波路型受光素子 - Google Patents

導波路型受光素子 Download PDF

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Publication number
JP7350974B2
JP7350974B2 JP2022502634A JP2022502634A JP7350974B2 JP 7350974 B2 JP7350974 B2 JP 7350974B2 JP 2022502634 A JP2022502634 A JP 2022502634A JP 2022502634 A JP2022502634 A JP 2022502634A JP 7350974 B2 JP7350974 B2 JP 7350974B2
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Japan
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layer
type
light
receiving element
waveguide
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JP2022502634A
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English (en)
Japanese (ja)
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JPWO2021171393A5 (https=
JPWO2021171393A1 (https=
Inventor
亮太 竹村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

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  • Light Receiving Elements (AREA)
JP2022502634A 2020-02-26 2020-02-26 導波路型受光素子 Active JP7350974B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/007584 WO2021171393A1 (ja) 2020-02-26 2020-02-26 導波路型受光素子

Publications (3)

Publication Number Publication Date
JPWO2021171393A1 JPWO2021171393A1 (https=) 2021-09-02
JPWO2021171393A5 JPWO2021171393A5 (https=) 2022-08-15
JP7350974B2 true JP7350974B2 (ja) 2023-09-26

Family

ID=77490804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022502634A Active JP7350974B2 (ja) 2020-02-26 2020-02-26 導波路型受光素子

Country Status (4)

Country Link
US (1) US11978812B2 (https=)
JP (1) JP7350974B2 (https=)
CN (1) CN115136327B (https=)
WO (1) WO2021171393A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7679259B2 (ja) * 2021-08-20 2025-05-19 浜松ホトニクス株式会社 光検出器
WO2023192918A2 (en) 2022-03-29 2023-10-05 Ostentus Therapeutics, Inc. Anti-oncogenic phytochemicals and methods and uses for treating cancer
CN117199155B (zh) * 2023-11-06 2024-02-13 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108010982A (zh) 2017-12-01 2018-05-08 北京工业大学 波导复合式耦合型单行载流子探测器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3505186B2 (ja) * 1996-06-13 2004-03-08 古河電気工業株式会社 半導体導波路型受光素子とその製造方法
JP2965139B2 (ja) * 1996-06-20 1999-10-18 日本電気株式会社 導波路型半導体受光素子
JP2970575B2 (ja) * 1997-03-06 1999-11-02 日本電気株式会社 導波路型半導体受光素子
JP3111982B2 (ja) * 1998-05-28 2000-11-27 日本電気株式会社 導波路型半導体光素子
US6417528B1 (en) 2000-01-28 2002-07-09 Agere Systems Guardian Corp. High speed semiconductor photodetector
JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP2010512664A (ja) * 2006-12-11 2010-04-22 ルーメンツ リミテッド ライアビリティ カンパニー 酸化亜鉛多接合光電池及び光電子装置
JP5294558B2 (ja) * 2006-12-19 2013-09-18 三菱電機株式会社 埋込導波路型受光素子とその製造方法
US7919349B2 (en) * 2008-02-22 2011-04-05 Alcatel-Lucent Usa Inc. Photonic integration scheme
JP2010010450A (ja) 2008-06-27 2010-01-14 Mitsubishi Electric Corp 導波路型受光素子
CN105122469B (zh) * 2013-04-19 2017-03-08 富士通株式会社 半导体受光元件及其制造方法
JP2019016694A (ja) * 2017-07-06 2019-01-31 富士通株式会社 受光装置、これを用いた光受信器、及び受光装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108010982A (zh) 2017-12-01 2018-05-08 北京工业大学 波导复合式耦合型单行载流子探测器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Y.-S. Wu et al.，"High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer at 1.55-μm Wavelength"，IEEE PHOTONICS TECHNOLOGY LETTERS，2005年04月，VOL. 17, NO. 4，pp.878-880

Also Published As

Publication number Publication date
CN115136327B (zh) 2024-07-30
WO2021171393A1 (ja) 2021-09-02
US11978812B2 (en) 2024-05-07
US20230055105A1 (en) 2023-02-23
JPWO2021171393A1 (https=) 2021-09-02
CN115136327A (zh) 2022-09-30

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