CN115136327B - 波导型受光元件 - Google Patents

波导型受光元件 Download PDF

Info

Publication number
CN115136327B
CN115136327B CN202080097215.3A CN202080097215A CN115136327B CN 115136327 B CN115136327 B CN 115136327B CN 202080097215 A CN202080097215 A CN 202080097215A CN 115136327 B CN115136327 B CN 115136327B
Authority
CN
China
Prior art keywords
layer
type
light
waveguide
receiving element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202080097215.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN115136327A (zh
Inventor
竹村亮太
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN115136327A publication Critical patent/CN115136327A/zh
Application granted granted Critical
Publication of CN115136327B publication Critical patent/CN115136327B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

Landscapes

  • Light Receiving Elements (AREA)
CN202080097215.3A 2020-02-26 2020-02-26 波导型受光元件 Active CN115136327B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/007584 WO2021171393A1 (ja) 2020-02-26 2020-02-26 導波路型受光素子

Publications (2)

Publication Number Publication Date
CN115136327A CN115136327A (zh) 2022-09-30
CN115136327B true CN115136327B (zh) 2024-07-30

Family

ID=77490804

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080097215.3A Active CN115136327B (zh) 2020-02-26 2020-02-26 波导型受光元件

Country Status (4)

Country Link
US (1) US11978812B2 (https=)
JP (1) JP7350974B2 (https=)
CN (1) CN115136327B (https=)
WO (1) WO2021171393A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7679259B2 (ja) * 2021-08-20 2025-05-19 浜松ホトニクス株式会社 光検出器
WO2023192918A2 (en) 2022-03-29 2023-10-05 Ostentus Therapeutics, Inc. Anti-oncogenic phytochemicals and methods and uses for treating cancer
CN117199155B (zh) * 2023-11-06 2024-02-13 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327272A (zh) * 2000-01-28 2001-12-19 朗迅科技公司 高速半导体光电探测器
CN101207162A (zh) * 2006-12-19 2008-06-25 三菱电机株式会社 埋入波导型受光元件

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3505186B2 (ja) * 1996-06-13 2004-03-08 古河電気工業株式会社 半導体導波路型受光素子とその製造方法
JP2965139B2 (ja) * 1996-06-20 1999-10-18 日本電気株式会社 導波路型半導体受光素子
JP2970575B2 (ja) * 1997-03-06 1999-11-02 日本電気株式会社 導波路型半導体受光素子
JP3111982B2 (ja) * 1998-05-28 2000-11-27 日本電気株式会社 導波路型半導体光素子
JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP2010512664A (ja) * 2006-12-11 2010-04-22 ルーメンツ リミテッド ライアビリティ カンパニー 酸化亜鉛多接合光電池及び光電子装置
US7919349B2 (en) * 2008-02-22 2011-04-05 Alcatel-Lucent Usa Inc. Photonic integration scheme
JP2010010450A (ja) 2008-06-27 2010-01-14 Mitsubishi Electric Corp 導波路型受光素子
CN105122469B (zh) * 2013-04-19 2017-03-08 富士通株式会社 半导体受光元件及其制造方法
JP2019016694A (ja) * 2017-07-06 2019-01-31 富士通株式会社 受光装置、これを用いた光受信器、及び受光装置の製造方法
CN108010982B (zh) 2017-12-01 2020-06-19 北京工业大学 波导复合式耦合型单行载流子探测器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1327272A (zh) * 2000-01-28 2001-12-19 朗迅科技公司 高速半导体光电探测器
CN101207162A (zh) * 2006-12-19 2008-06-25 三菱电机株式会社 埋入波导型受光元件

Also Published As

Publication number Publication date
WO2021171393A1 (ja) 2021-09-02
US11978812B2 (en) 2024-05-07
US20230055105A1 (en) 2023-02-23
JP7350974B2 (ja) 2023-09-26
JPWO2021171393A1 (https=) 2021-09-02
CN115136327A (zh) 2022-09-30

Similar Documents

Publication Publication Date Title
JP3141847B2 (ja) アバランシェフォトダイオード
CN100576576C (zh) 埋入波导型受光元件
CN115136327B (zh) 波导型受光元件
CN110931575B (zh) 与dbr包层及反射镜单片集成的波导光探测器
US20100133637A1 (en) Avalanche photodiode
JP2708409B2 (ja) 半導体受光素子およびその製造方法
CN119404612A (zh) 半导体受光元件及半导体受光元件的制造方法
JP3675223B2 (ja) アバランシェフォトダイオードとその製造方法
US4587544A (en) Avalanche photodetector
US4586067A (en) Photodetector with isolated avalanche region
CN119318223A (zh) 半导体受光元件
US20040056250A1 (en) Semiconductor light-receiving device
GB2634166A (en) Semiconductor light-receiving element
WO2023062766A1 (ja) 導波路型受光素子、導波路型受光素子アレイ及び導波路型受光素子の製造方法
US20260090114A1 (en) Back-illuminated light receiving device
JP4284781B2 (ja) Ｍｓｍ型フォトダイオード
JP7435786B2 (ja) 受光器
US12495625B2 (en) High-speed, large-area separate absorption and drift photodetector
US12278304B2 (en) High modulation speed PIN-type photodiode
JP7568072B2 (ja) 受光素子およびその製造方法
US20250120190A1 (en) Photodiode with an interface region to reduce a band offset between a carrier generating region and a doped region
JPH01194352A (ja) 受光素子及び集積化受信器
JP2742358B2 (ja) 半導体光検出器およびその製造方法
JP2005086028A (ja) 半導体受光装置
JP2002141547A (ja) 半導体光検出器

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant