WO2021171393A1 - 導波路型受光素子 - Google Patents

導波路型受光素子 Download PDF

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Publication number
WO2021171393A1
WO2021171393A1 PCT/JP2020/007584 JP2020007584W WO2021171393A1 WO 2021171393 A1 WO2021171393 A1 WO 2021171393A1 JP 2020007584 W JP2020007584 W JP 2020007584W WO 2021171393 A1 WO2021171393 A1 WO 2021171393A1
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layer
type
receiving element
light
light receiving
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English (en)
French (fr)
Japanese (ja)
Inventor
亮太 竹村
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to CN202080097215.3A priority Critical patent/CN115136327B/zh
Priority to US17/785,318 priority patent/US11978812B2/en
Priority to JP2022502634A priority patent/JP7350974B2/ja
Priority to PCT/JP2020/007584 priority patent/WO2021171393A1/ja
Publication of WO2021171393A1 publication Critical patent/WO2021171393A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

Definitions

  • the present application relates to a waveguide type light receiving element.
  • a waveguide type light receiving element is adopted as a method of reducing the element capacitance C and obtaining a high-speed response of, for example, 40 GHz or more.
  • the waveguide type light receiving element has a structure in which light is incident from the side surface of the epitaxial layer, and unlike a normal surface incident type structure, the sensitivity and band can be individually optimized, so that the structure is suitable for high-speed operation. ing.
  • Patent Document 1 discloses a waveguide type semiconductor light receiving element (wavewave type light receiving element) having a window structure devised to reduce surface recombination at an end face portion where light is incident.
  • the waveguide type semiconductor light receiving element of Patent Document 1 includes a light absorption / waveguide layer (light absorption layer) that guides light while absorbing light, and the light absorption / waveguide layer in the window structure is in an unnatural superlattice region. It has become.
  • the size of the light receiving region is generally smaller than that of the surface incident type light receiving element, and the light is concentrated on the end surface on the side where the light is incident. Therefore, a large number of photocarriers are generated on the front end surface (light incident surface) side where light is incident in the light absorption layer.
  • the generated photocarrier holes move to the anode side of the negative potential and electrons move to the cathode side of the positive potential due to the reverse bias applied to the photodiode. The greater the power of light input to the photodiode, that is, the larger the optical input power, the more photocarriers are generated.
  • the technique disclosed in the present specification aims to obtain a waveguide type light receiving element having improved high-speed response even when the optical input power is large.
  • a waveguide layer having a core layer that absorbs light is formed on a semiconductor substrate.
  • the waveguide type light receiving element includes a first conductive type first contact layer, a waveguide layer, and a second conductive type second contact layer sequentially formed on a semiconductor substrate.
  • the waveguide layer includes a first conductive type first clad layer arranged on the side of the first contact layer, a second conductive type second clad layer arranged on the side of the second contact layer, and a first clad. It includes a core layer arranged between the layer and the second clad layer.
  • the core layer has a light absorption layer and an impurity-doped light absorption layer which has a higher concentration of p-type impurities than the light absorption layer and is arranged on the light incident surface side where signal light is incident.
  • An example of a waveguide type light receiving element disclosed in the present specification is an impurity-doped light absorption layer in which the core layer of the waveguide layer is arranged on the light incident surface side and the concentration of p-type impurities is higher than that of the light absorption layer. Therefore, high-speed response can be improved even when the optical input power is large.
  • FIG. It is a perspective view of the waveguide type light receiving element of the 1st example which concerns on Embodiment 1.
  • FIG. It is sectional drawing which follows the broken line shown by A1-A1 of FIG. It is sectional drawing which follows the broken line shown by B1-B1 of FIG. It is sectional drawing which follows the broken line shown by C1-C1 of FIG.
  • FIG. It is a perspective view of the waveguide type light receiving element of the 2nd example which concerns on Embodiment 1.
  • FIG. It is sectional drawing which follows the broken line shown by A2-A2 of FIG. It is sectional drawing which follows the broken line shown by B2-B2 of FIG. It is sectional drawing which follows the broken line shown by C2-C2 of FIG.
  • FIG. 1 It is sectional drawing of the waveguide type light receiving element of the comparative example. It is sectional drawing of the waveguide type light receiving element of the 3rd example which concerns on Embodiment 1.
  • FIG. It is sectional drawing of the 4th example waveguide type light receiving element which concerns on Embodiment 1.
  • FIG. It is sectional drawing of the 5th example waveguide type light receiving element which concerns on Embodiment 1.
  • FIG. It is a perspective view of the waveguide type light receiving element of the 1st example which concerns on Embodiment 2.
  • FIG. It is sectional drawing which follows the broken line shown by A3-A3 of FIG. It is sectional drawing which follows the broken line shown by DD of FIG.
  • FIG. It is sectional drawing of the waveguide type light receiving element of the 2nd example which concerns on Embodiment 2.
  • FIG. It is a perspective view of the waveguide type light receiving element which concerns on Embodiment 3.
  • FIG. It is sectional drawing of the first example along the broken line shown by A4-A4 of FIG. It is sectional drawing of the first example along the broken line shown by B3-B3 of FIG. It is sectional drawing of the 2nd example along the broken line shown by A4-A4 of FIG. It is sectional drawing of the 2nd example along the broken line shown by B3-B3 of FIG.
  • FIG. It is sectional drawing which follows the broken line shown by A5-A5 of FIG.
  • FIG. It is sectional drawing which follows the broken line shown by B4-B4 of FIG. It is sectional drawing which follows the broken line shown by C3-C3 of FIG. It is sectional drawing which follows the broken line shown by FF of FIG. It is sectional drawing which follows the broken line shown by GG of FIG. It is a perspective view of the waveguide type light receiving element which concerns on Embodiment 5.
  • FIG. It is sectional drawing which follows the broken line shown by A6-A6 of FIG. It is a perspective view of the waveguide type light receiving element which concerns on Embodiment 6.
  • Embodiment 7 It is a perspective view of the waveguide type light receiving element which concerns on Embodiment 7. It is sectional drawing which follows the broken line shown by A7-A7 of FIG. It is sectional drawing which follows the broken line shown by B6-B6 of FIG. 33. It is sectional drawing which follows the broken line shown by C4-C4 of FIG.
  • FIG. 1 is a perspective view of the waveguide type light receiving element of the first example according to the first embodiment
  • FIG. 2 is a cross-sectional view taken along the broken line shown by A1-A1 of FIG.
  • FIG. 3 is a cross-sectional view taken along the broken line shown by B1-B1 of FIG. 1
  • FIG. 4 is a cross-sectional view taken along the broken line shown by C1-C1 of FIG.
  • FIG. 5 is a perspective view of the waveguide type light receiving element of the second example according to the first embodiment
  • FIG. 6 is a cross-sectional view taken along the broken line shown by A2-A2 of FIG.
  • FIG. 7 is a cross-sectional view taken along the broken line shown by B2-B2 of FIG.
  • FIG. 5 is a cross-sectional view taken along the broken line shown by C2-C2 of FIG.
  • FIG. 9 is a cross-sectional view of a waveguide type light receiving element of a comparative example.
  • FIG. 10 is a cross-sectional view of the waveguide type light receiving element of the third example according to the first embodiment
  • FIG. 11 is a cross-sectional view of the waveguide type light receiving element of the fourth example according to the first embodiment.
  • FIG. 12 is a cross-sectional view of the waveguide type light receiving element of the fifth example according to the first embodiment.
  • the waveguide type light receiving element 100 of the first example of the first embodiment includes a semiconductor substrate 1, a laminated structure portion 18 formed on the semiconductor substrate 1, a first electrode 17, and a second electrode 7.
  • the semiconductor substrate 1 is, for example, an InP substrate.
  • the structure of the laminated structure portion 18 is such that the surface of the semiconductor substrate 1 has a first conductive type first contact layer 2, a first conductive type first clad layer 3, and a light absorbing layer 4 such as InGaAs.
  • the first clad layer 3, the core layer 30, and the second clad layer 5 form a waveguide layer 31.
  • the laminated structure portion 18 includes a first conductive type first contact layer 2, a waveguide layer 31, and a second conductive type second contact layer 6, and the waveguide layer 31 is the first contact layer 2.
  • the first conductive type first clad layer 3 arranged on the side, the second conductive type second clad layer 5 arranged on the side of the second contact layer 6, the first clad layer 3 and the second clad layer. It includes a core layer 30 arranged between the 5 and the core layer 30.
  • a second electrode 7 is formed on the surface of the second conductive type second contact layer 6 of the laminated structure portion 18.
  • the light absorption layer 4 is an undoped layer such as InGaAs in which impurities are not doped
  • the impurity-doped light absorption layer 8 is an impurity-doped layer in which impurities doped with p-type impurities are doped in a crystal layer such as InGaAs.
  • the first electrode 17 is connected to the first conductive type first contact layer 2 via a contact hole 19 formed in the laminated structure portion 18.
  • the first conductive type is n type
  • the second conductive type is p type.
  • the impurity-doped light absorption layer 8 is a light absorption layer in which the light absorption layer 4 on the side of the light incident surface 21 on which the signal light 20 is incident is p-shaped.
  • the signal light 20 is incident from the light incident portion 22 of the core layer 30.
  • FIG. 2 is a cross-sectional view cut in the traveling direction of the signal light 20, that is, in the light traveling direction
  • FIGS. 3 and 4 are cross-sectional views cut in a direction perpendicular to the traveling direction of the signal light 20.
  • the traveling direction of the signal light 20 is the z direction
  • the direction perpendicular to the semiconductor substrate 1 is the y direction
  • the z direction and the direction perpendicular to the y direction are the x directions.
  • the cross section shown in FIG. 2 can also be said to be a cross section cut along a YZ plane including an axis in the y direction and an axis in the z direction.
  • the cross section shown in FIGS. 3 and 4 can also be said to be a cross section cut along an XY plane including an axis in the x direction and an axis in the y direction.
  • Examples of the crystal growth method for each layer of the laminated structure portion 18 include a liquid phase growth method (Liquid Phase Epitaxy: LPE), a vapor phase growth method (Vapor Phase Epitaxy: VPE), and a metalorganic vapor phase growth method (Metalorganic VPE: MO-). VPE), molecular beam epitaxy (MBE) and the like are used.
  • Each layer of the laminated structure portion 18 is a group III-V semiconductor crystal. Specific examples of each layer of the laminated structure portion 18 will be described later.
  • Group II atoms such as Be, Mg, Zn, and Cd are used as p-type dopants (p-type impurities) in order to impart conductivity to group III-V semiconductor crystals, and n-type dopants (n-type impurities) are used.
  • Group VI atoms such as S, Se, and Te are used.
  • Group IV atoms such as C, Si, Ge, and Sn are used as amphoteric impurities that act as either p-type or n-type conductive dopants depending on the semiconductor crystal.
  • atoms such as Fe and Ru act as insulating dopants that suppress conductivity and become semi-insulating (SI) type.
  • the impurity-doped light absorption layer 8 is formed by diffusing or injecting a p-type dopant into a part of the light absorption layer 4 of the laminated structure portion 18, for example, on the side of the light incident surface 21.
  • An insulating film or a photoresist mask is formed on the surface of the laminated structure portion 18 before the impurity-doped light absorption layer 8 is formed, that is, the surface opposite to the semiconductor substrate 1, by a general lithography technique to absorb impurity-doped light.
  • the p-type dopant is diffused or injected with the portion to be layer 8 opened. In this way, the core layer 30 in which a part of the light absorption layer 4 is p-shaped is formed.
  • the light absorption layer 4 is not limited to the undoped layer.
  • the light absorption layer 4 may have a lower concentration of p-type impurities than the impurity-doped light absorption layer 8.
  • the concentration of p-type impurities or the concentration of n-type impurities in the light absorption layer 4 may be 1/10 or less of the concentration of p-type impurities in the impurity-doped light absorption layer 8.
  • the core layer 30 includes the light absorption layer 4 and the impurity-doped light absorption layer 8 which has a higher concentration of p-type impurities than the light absorption layer 4 and is arranged on the light incident surface 21 side on which the signal light 20 is incident. have.
  • the first electrode 17 and the second electrode 7 are formed as follows.
  • the contact hole 19 is formed in the laminated structure portion 18 by wet etching with the mask opened only in a desired portion by using a general lithography technique.
  • Metals such as Ti, Pt, and Au are deposited by electron beam or sputtered in a state where a mask is opened only in a desired portion by using a general lithography technique in a portion forming the first electrode 17 and the second electrode 7.
  • the film is formed by the method of.
  • the first electrode 17 and the second electrode 7 are formed by removing the metal in the unnecessary portion. Further, the first electrode 17 and the second electrode 7 may be formed as follows.
  • a metal such as Ti, Pt, or Au is formed on the entire surface of the laminated structure portion 18 in which the contact hole 19 is formed.
  • the first electrode 17 and the second electrode 7 are formed by wet-etching the metal of the unnecessary portion while leaving the mask only in the desired portion by using a general lithography technique.
  • the semiconductor substrate 1 is preferably a semi-insulating substrate doped with Fe or the like.
  • the first contact layer 2 is an epitaxial layer of any one of InGaAs, InP, InGaAsP, AlInAs, and AlGaInAs, or a composite layer in which they are combined.
  • the first clad layer 3 is an epitaxial layer of any one of InP, InGaAsP, AlInAs, and AlGaInAs, or a composite layer in which they are combined.
  • the core layer 30 that is, the light absorption layer 4, and the impurity-doped light absorption layer 8, a material that generates a photocarrier when light is incident, that is, a material having a small band gap with respect to the incident light is used.
  • the core layer 30 is an epitaxial layer of any of InGaAs, InGaAsP, and InGaAsSb, or a composite layer in which they are combined.
  • the second clad layer 5 is an epitaxial layer of any one of InP, InGaAsP, AlInAs, and AlGaInAs, or a composite layer in which they are combined.
  • the second contact layer 6 is an epitaxial layer of any one of InGaAs, InP, InGaAsP, AlInAs, and AlGaInAs, or a composite layer in which they are combined.
  • the cross-sectional view shown in FIG. 3 is a cross-sectional view of a portion where the impurity-doped light absorption layer 8 is formed
  • the cross-sectional view shown in FIG. 4 is a cross-sectional view of the portion where the light absorption layer 4 is formed.
  • the second contact layer 6 and the second electrode 7 formed on the upper portion of the impurity-doped light absorption layer 8, that is, the positive side portion in the y direction are formed on the upper portion of the light absorption layer 4, that is, the positive side portion in the y direction.
  • An example is shown in which the length in the x direction is smaller than that of the contact layer 6 and the second electrode 7.
  • the length of the second contact layer 6 and the second electrode 7 formed on the upper part of the impurity-doped light absorbing layer 8 in the x direction may be a length including the length of the light incident portion 22 in the x direction. ..
  • the length of the second contact layer 6 and the second electrode 7 formed on the upper part of the light absorption layer 4, that is, the second contact layer 6 and the second electrode 7 at the rear part away from the light incident surface 21 in the x direction is a wire.
  • the second contact layer 6 and the second electrode 7 formed on the upper part of the impurity-doped light absorption layer 8, that is, the second contact layer 6 on the front side on the light incident surface 21 side and the second contact layer 6 and the like are connected. It is wider than the second electrode 7.
  • the broken line shown on the light incident surface 21 side of the second electrode 7 and the second contact layer 6 indicates a portion where the length in the x direction changes.
  • the side surfaces of the second electrode 7 and the second contact layer 6 on the traveling direction side of the signal light 20, that is, on the positive side in the z direction with respect to the cross section of the second electrode 7 and the second contact layer 6 are shown in white.
  • the inner surface of the first electrode 17 on the traveling direction side of the signal light 20, that is, on the positive side in the z direction with respect to the cross section of the first electrode 17 is shown in white.
  • the light incident portion 22 is shown in white for the sake of clarity. In the other figures, the light incident portion 22 is displayed in the same manner.
  • the entire surface or a part of the back surface side of the semiconductor substrate 1 may be covered with the back surface electrode 9. Further, at least a portion of the light incident surface 21 on which light is incident may be covered with the antireflection film 10.
  • the antireflection film 10 is omitted.
  • FIG. 6 shows an example in which the antireflection film 10 is formed from the semiconductor substrate 1 to each layer of the laminated structure portion 18. The antireflection film 10 is formed by vapor deposition or sputtering in a state where the chip of the waveguide type light receiving element 100 is cleaved.
  • the back surface electrode 9 is formed in the same manner as the first electrode 17 and the second electrode 7.
  • the operation of the waveguide type light receiving element 100 of the first embodiment will be described in comparison with the waveguide type light receiving element 110 of the comparative example.
  • the waveguide type light receiving element 110 of the comparative example shown in FIG. 9 is the same as the waveguide type light receiving element 100 of the second example except that the core layer 30 is only the light absorption layer 4.
  • the cross section shown in FIG. 9 corresponds to the cross section shown in FIG. An example in which the first conductive type is n-type and the second conductive type is p-type will be described. When a reverse bias is applied between the first electrode 17 and the second electrode 7, a voltage is applied so that the first electrode 17 has a positive potential and the second electrode 7 has a negative potential.
  • the number of photo carriers generated on the light incident surface 21 side of the light absorption layer 4 also increases. Since the holes move slowly, they stay on the light incident surface 21 side of the light absorption layer 4 and the second clad layer 5.
  • the retained holes are generated between the electric field due to the voltage applied between the first electrode 17 and the second electrode 7, that is, between the n-type first contact layer 2 and the p-type second contact layer 6. Since it works in the direction of canceling the electric field, the movement of holes becomes slower. Therefore, holes are further retained, and as a result, the high-speed response of the waveguide type light receiving element 110 of the comparative example deteriorates. Further, in the waveguide type light receiving element 110 of the comparative example, the output current corresponding to the optical input power does not flow, and the linearity of the output also deteriorates.
  • the waveguide type light receiving element 100 of the first embodiment holes, which are photocarriers, are mainly generated in the region of the p-type impurity-doped light absorption layer 8.
  • the generated holes serve as a large number of carriers in the p-type region, that is, the region of the impurity-doped light absorption layer 8, and therefore do not become a factor in determining the response rate.
  • the electron drift phenomenon in the p-type region determines the response speed. Since the electron drift velocity is faster than the hole drift velocity, the waveguide type light receiving element 100 of the first embodiment has a higher response speed than the waveguide type light receiving element 110 of the comparative example.
  • the waveguide type light receiving element 100 of the first embodiment can improve the high-speed response even when the optical input power is large.
  • the length of the depletion layer formed on the light incident surface 21 side of the impurity-doped light absorbing layer 8 in the y direction is that of the waveguide type light receiving element 110 of the comparative example. It is shorter than the depletion layer, and the holes quickly move to the second clad layer 5 so that the holes do not accumulate in the depletion layer, so that the space charge effect can be suppressed. Therefore, the waveguide type light receiving element 100 of the first embodiment can improve the high-speed response as compared with the waveguide type light receiving element 110 of the comparative example, and can improve the linearity of the optical current with respect to the optical input power.
  • the length of the depletion layer in the y direction becomes shorter because there is no region where the impurity concentration is lower than that of the undoped layer region or the impurity-doped light absorbing layer 8.
  • the capacitance of the waveguide type light receiving element increases, and the high-speed response deteriorates. Therefore, it is desirable that the core layer 30 has an impurity-doped light absorption layer 8 only in the region on the light incident surface 21 side.
  • the length of the impurity-doped light absorption layer 8 in the z direction is la.
  • the cross section shown in FIG. 10 corresponds to the cross section shown in FIG.
  • the length of the light absorption layer 4 of the waveguide type light receiving element that is, the length of the light absorption layer 4 of the waveguide type light receiving element 110 of the comparative example is often set to about several tens of ⁇ m.
  • the waveguide type light receiving element 100 of the first embodiment has an increased capacity due to the length la of the p-type impurity-doped light absorption layer 8. It is possible to improve the high-speed response and the linearity of the optical current even when the optical input power is large, while reducing the influence of the above.
  • the length la is preferably, for example, 2 ⁇ m or more and 3 ⁇ m or less.
  • the band is discontinuous between each epitaxial layer of the laminated structure portion 18 and between the second electrode 7 and the second contact layer 6.
  • Band discontinuity relaxation layers 16a, 16b, 16c, 16d, 16e using InGaAsP, AlGaInAs, etc. may be formed in order to alleviate the above.
  • the cross section shown in FIG. 11 corresponds to the cross section shown in FIG. In FIG. 11, an example in which band discontinuity relaxation layers 16a, 16b, 16c, 16d, 16e are formed between each epitaxial layer of the laminated structure portion 18 and between the second electrode 7 and the second contact layer 6. showed that.
  • the first clad layer 3, the band discontinuity relaxation layer 16b, the core layer 30, the band discontinuity relaxation layer 16c, and the second clad layer 5 form a waveguide layer 31.
  • Any material may be used for each layer of the laminated structure portion 18 as long as the characteristics necessary for operation as a waveguide type light receiving element can be obtained, and the above-mentioned materials do not limit the range.
  • the present invention is not limited to this.
  • the first conductive type may be p type and the second conductive type may be n type.
  • the structure of the laminated structure portion 18 is a p-type first conductive type first contact layer 42 and a p-type first conductive type.
  • the second conductive type second contact layer 46 which is a mold, is sequentially laminated.
  • the first clad layer 43, the core layer 30, and the second clad layer 45 form a waveguide layer 31.
  • the cross section shown in FIG. 12 corresponds to the cross section shown in FIG.
  • the waveguide type light receiving element 100 of the fifth example can improve the high-speed response even when the optical input power is large, and can improve the linearity of the optical current with respect to the optical input power.
  • a waveguide type light receiving element such as Patent Document 1 in which a window structure is formed on an end face portion where light is incident to reduce surface recombination, not only the light absorption layer 4 but also the n-type first light receiving element is used. It has a structure in which all of the epitaxial layers such as the clad layer 3 have a window structure, and it is not disclosed that the element operates at high speed by suppressing low-speed operation when the optical input power is large. From the window structure as shown in Patent Document 1, the effect of the waveguide type light receiving element 100 of the first embodiment cannot be inferred.
  • the waveguide type light receiving element 100 of the first embodiment is a waveguide type light receiving element in which a waveguide layer having a core layer for absorbing light is formed on a semiconductor substrate.
  • the waveguide type light receiving element 100 includes a first conductive type first contact layer 2, a waveguide layer 31, and a second conductive type second contact layer 6 sequentially formed on the semiconductor substrate 1.
  • the waveguide layer 31 includes a first conductive type first clad layer 3 arranged on the side of the first contact layer 2 and a second conductive type second clad layer 5 arranged on the side of the second contact layer 6. And a core layer 30 arranged between the first clad layer 3 and the second clad layer 5.
  • the core layer 30 has a light absorption layer 4 and an impurity-doped light absorption layer 8 having a higher concentration of p-type impurities than the light absorption layer 4 and arranged on the light incident surface 21 side on which the signal light 20 is incident. ..
  • the core layer 30 of the waveguide layer 31 is arranged on the light incident surface 21 side, and the concentration of p-type impurities is higher than that of the light absorption layer 4. Since the doped light absorption layer 8 is provided, high-speed response can be improved even when the optical input power is large.
  • FIG. 13 is a perspective view of the waveguide type light receiving element of the first example according to the second embodiment.
  • 14 is a cross-sectional view taken along the broken line shown by A3-A3 of FIG. 13
  • FIG. 15 is a cross-sectional view taken along the broken line shown by DD of FIG.
  • FIG. 16 is a cross-sectional view of the waveguide type light receiving element of the second example according to the second embodiment.
  • the cross-sectional views taken along the broken line shown by B2-B2 and the broken line shown by C2-C2 in FIG. 13 are the same as those in FIGS. 7 and 8, respectively.
  • the waveguide type light receiving element 100 of the second embodiment is different from the waveguide type light receiving element 100 of the first embodiment in the undoped light absorbing layer 11 between the p-type impurity-doped light absorbing layer 8 and the light incident surface 21. Is different in that is arranged. A portion different from the waveguide type light receiving element 100 of the first embodiment will be mainly described.
  • the core layer 30 has an undoped light absorption layer 11, an impurity-doped light absorption layer 8, and a light absorption layer 4.
  • the undoped light absorbing layer 11 is a light absorbing layer that absorbs light by undoping, and is arranged closer to the light incident surface 21 than the impurity-doped light absorbing layer 8.
  • the part may be structurally weakened.
  • the first conductive type is n type and the second conductive type is p type
  • the first clad layer 3 becomes n type.
  • the first conductive type is p-type and the second conductive type is n-type
  • the second clad layer 5 becomes n-type.
  • the n-type second clad layer 45 is the n-type second clad layer 5. Corresponds to.
  • the portion where the electric field is concentrated is not formed in the region on the light incident surface 21 side which is the end of the element, even if stronger light is incident, the portion of the first embodiment The effect of the waveguide type light receiving element 100 can be exhibited.
  • the length of the undoped light absorption layer 11 in the z direction is lb.
  • the cross section shown in FIG. 16 corresponds to the cross section shown in FIG.
  • the length lb of the undoped light absorption layer 11 in the z direction is set to 50 nm, only 3% or less of the incident light is absorbed in the undoped light absorption layer 11.
  • the waveguide type light receiving element 100 of the second example of the second embodiment most of the light is transmitted by the p-type impurity-doped light absorption layer 8 while maintaining the structural intensity even when strong light is incident. It can be absorbed, and high-speed response and linearity of optical current can be improved even when the optical input power is large.
  • the length lb is preferably, for example, 10 nm or more and 50 nm or less.
  • FIG. 17 is a perspective view of the waveguide type light receiving element according to the third embodiment.
  • FIG. 18 is a cross-sectional view of the first example along the broken line shown by A4-A4 of FIG. 17, and
  • FIG. 19 is a cross-sectional view of the first example along the broken line shown by B3-B3 of FIG.
  • FIG. 20 is a cross-sectional view of the second example along the broken line shown by A4-A4 of FIG. 17, and
  • FIG. 21 is a cross-sectional view of the second example along the broken line shown by B3-B3 of FIG.
  • the cross-sectional view taken along the broken line shown by C2-C2 in FIG. 17 is the same as that in FIG.
  • the waveguide type light receiving element 100 of the third embodiment is different from the waveguide type light receiving element 100 of the first embodiment with the p-type impurity-doped light absorption layer 8 and the n-type first clad layer 3 or the n-type first clad layer 3. The difference is that a light absorbing layer 4 is formed between the two clad layers 5. A portion different from the waveguide type light receiving element 100 of the first embodiment will be mainly described.
  • the first clad layer 3 becomes n type. In this case, it becomes like the waveguide type light receiving element 100 of the first example of the third embodiment shown in FIGS. 18 and 19.
  • the first conductive type is p-type and the second conductive type is n-type
  • the second clad layer 5 becomes n-type.
  • the waveguide type light receiving element 100 of the second example of the third embodiment shown in FIGS. 20 and 21 is obtained.
  • the n-type second clad layer 45 is the n-type second clad layer 5. Corresponds to.
  • the light absorption layer 4 between the p-type impurity-doped light absorption layer 8 and the n-type first clad layer 3 diffuses or injects the p-type dopant when forming the p-type impurity-doped light absorption layer 8. This can be achieved by adjusting the conditions. Further, the light absorption layer 4 between the p-type impurity-doped light absorption layer 8 and the n-type second clad layer 5 is injected with the p-type dopant when the p-type impurity-doped light absorption layer 8 is formed. This can be achieved by adjusting the conditions.
  • the waveguide type light receiving element 100 of the third embodiment has the effect of the waveguide type light receiving element 100 of the first embodiment, and has a light absorption layer 4 or an undoped light absorption layer 4 or more than the waveguide type light receiving element 100 of the first embodiment. Since the region of the light absorption layer 4 having an impurity concentration lower than that of the impurity-doped light absorption layer 8 becomes wider and the capacity can be reduced, the high-speed response can be further improved.
  • the light density of the incident signal light 20 is highest in the center of the core layer 30 in the epi-stacking direction, that is, in the y direction, and approaches the upper and lower parts of the core layer 30, that is, the second clad layer 5 and the first clad layer 3. The light density is low.
  • FIG. 22 is a perspective view of the waveguide type light receiving element according to the fourth embodiment
  • FIG. 23 is a cross-sectional view taken along the broken line shown by A5-A5 of FIG.
  • FIG. 24 is a cross-sectional view taken along the broken line shown by B4-B4 of FIG. 22, and
  • FIG. 25 is a cross-sectional view taken along the broken line shown by C3-C3 of FIG.
  • FIG. 26 is a cross-sectional view taken along the broken line shown by FF in FIG. 22, and
  • FIG. 27 is a cross-sectional view taken along the broken line shown by GG in FIG.
  • the waveguide type light receiving element 100 of the fourth embodiment is different from the waveguide type light receiving element 100 of the first embodiment in the ridge portion 14 having a part of the first clad layer 3, the core layer 30, and the second clad layer 5. Is formed, and the z-direction side surface and the y-direction side surface of the ridge portion 14 are embedded in the embedded layer 12. A portion different from the waveguide type light receiving element 100 of the first embodiment will be mainly described.
  • the waveguide type light receiving element 100 of the fourth embodiment includes a semiconductor substrate 1, a laminated structure portion 18 formed on the semiconductor substrate 1, a first electrode 17, and a second electrode 7.
  • the laminated structure portion 18 includes a first conductive type first contact layer 2, a ridge portion 14, a first clad layer 3, an embedded layer 12, and a second contact layer 6 arranged on the outer periphery of the ridge portion 14. ..
  • the range of the ridge portion 14 in the z direction is a range between the broken line 25a and the broken line 25b.
  • the range of the ridge portion 14 in the x direction is a range between the broken line 25c and the broken line 25d.
  • the first clad layer 3 has a portion that is a part of the ridge portion 14 and a portion that is not a part of the ridge portion 14.
  • the embedded layer 12 covers the surface on the positive side in the y direction of the first clad layer 3 not included in the ridge portion 14, and the side surface in the z direction and the side surface in the x direction of the ridge portion 14.
  • the surface of the embedding layer 12 is covered with the passivation film 13, and the surface of the second clad layer 5 and the side surface of the second contact layer 6 at the ridge portion 14 are covered with the passivation film 13.
  • the surface of the embedded layer 12 and the surface of the second clad layer 5 at the ridge portion 14 are surfaces on the positive side in the y direction.
  • the side surface of the second contact layer 6 in the ridge portion 14 is a side surface in the y direction and a side surface in the z direction.
  • the side surface of the second electrode 7 on the traveling direction side of the signal light 20, that is, on the positive side in the z direction with respect to the cross section of the second electrode 7 and the second contact layer 6 is shown in white.
  • the inner surface of the first electrode 17 on the traveling direction side of the signal light 20, that is, on the positive side in the z direction with respect to the cross section of the first electrode 17 is shown in white.
  • the second electrode 7, the first electrode 17, and the back electrode 9 located on the traveling direction side of the signal light 20, that is, on the positive side in the z direction with respect to the broken line shown by FF in FIG. 22 are shown in white. ..
  • the embedded layer 12 is an epitaxial layer such as InP, InGaAs, or InGaAsP, or a composite layer in which they are combined. Further, the embedded layer 12 may be doped with Fe or Ru.
  • the passivation film 13 is an insulating film of SiO 2 , SiN, SiON, or a composite insulating film in combination thereof.
  • a second electrode 7 is formed on the surface of the second conductive type second contact layer 6 of the laminated structure portion 18.
  • the first electrode 17 is connected to the first conductive type first contact layer 2 via a contact hole 19 formed in the embedded layer 12 of the laminated structure portion 18 and a passivation film 13 covering the side surface of the contact hole 19. There is.
  • the first conductive type is n type
  • the second conductive type is p type
  • the first conductive type may be p type
  • the second conductive type may be n type.
  • FIGS. 22 to 27 at least a portion of the light incident surface 21 on which light is incident is covered with the antireflection film 10, and the entire surface or a part of the back surface side of the semiconductor substrate 1 is covered with the back surface electrode 9. showed that.
  • the antireflection film 10 is omitted.
  • the manufacturing method of the waveguide type light receiving element 100 of the fourth embodiment will be described.
  • the procedure is as described in the first embodiment until the p-type impurity-doped light absorption layer 8 is formed.
  • a mask of the insulating film is formed by a general lithography technique.
  • the epitaxial layer of the portion not covered by the insulating film mask is etched to the middle of the first clad layer 3 by dry etching or wet etching such as reactive ion etching (RIE).
  • RIE reactive ion etching
  • the embedded layer 12 is selectively grown in the etched portion by an organic metal vapor phase growth method (Metalorganic Vapor Phase Epitaxy: MO-VPE) or the like.
  • MO-VPE Organic Metal vapor phase growth method
  • the passivation film 13 is formed by forming an insulating film of the above-mentioned material by a method such as plasma-enhanced chemical vapor deposition (PE-CVD) or sputtering, and etching an unnecessary portion of the insulating film. To form.
  • PE-CVD plasma-enhanced chemical vapor deposition
  • sputtering an unnecessary portion of the insulating film.
  • a general lithography technique is used to etch the insulating film of the unnecessary part while leaving a mask only for the desired part.
  • the waveguide type light receiving element 100 of the fourth embodiment is embedded with an embedded layer 12 so that the x-direction and z-direction side surfaces of the ridge portion 14 are not exposed, so that the interface boundary portion, which is a portion where the electric field is concentrated, is the element end.
  • the effect of the waveguide type light receiving element 100 of the first embodiment can be obtained even if stronger light is incident.
  • a part of the lower layer of the second electrode 7 (on the right side of the broken line 25b in FIG. 23) is formed in the passivation film 13 and the embedded layer 12, and only in the ridge portion 14. Since the facing area, which is the area of the first contact layer 2 facing the formed undoped light absorption layer 4 or the light absorption layer 4 having an impurity concentration lower than that of the impurity-doped light absorption layer 8, can be reduced, the second electrode 7 can be used.
  • the capacitance between the connected second contact layer 6 and the first contact layer 2 connected to the first electrode 17, that is, the capacitance of the waveguide type light receiving element can be reduced. That is, in the waveguide type light receiving element 100 of the fourth embodiment, since the core layer 30 having the impurity-doped light absorption layer 8 and the light absorption layer 4 is formed in the ridge portion 14, the waveguide type of the first embodiment is formed. The capacitance of the waveguide type light receiving element can be reduced as compared with the light receiving element 100. Therefore, the waveguide type light receiving element 100 of the fourth embodiment has the effect of the waveguide type light receiving element 100 of the first embodiment, and has a more waveguide type light receiving element than the waveguide type light receiving element 100 of the first embodiment. Since the capacitance of the device is small, the high-speed response can be improved as compared with the waveguide type light receiving element 100 of the first embodiment.
  • FIG. 28 is a perspective view of the waveguide type light receiving element according to the fifth embodiment
  • FIG. 29 is a cross-sectional view taken along the broken line shown by A6-A6 of FIG. 28.
  • the cross-sectional views taken along the broken line shown by B4-B4, the broken line shown by C3-C3, the broken line shown by FF, and the broken line shown by GG in FIG. 28 are FIGS. 24, 25, and 26, respectively. , Same as FIG. 27.
  • the waveguide type light receiving element 100 of the fifth embodiment is different from the waveguide type light receiving element 100 of the fourth embodiment in that the semiconductor substrate 1 extends the substrate extending portion 32 extending in the traveling direction side of the signal light 20, that is, the positive side in the z direction. It differs in that it is prepared. A portion different from the waveguide type light receiving element 100 of the fourth embodiment will be mainly described.
  • the substrate stretched portion 32 is formed by etching the laminated structure portion 18 on the side opposite to the light incident surface 21.
  • the range of the substrate stretched portion 32 in the z direction is between the broken line 26a and the broken line 26b.
  • the substrate extending portion 32 extends in the z-direction positive side from the end portion of the embedded layer 12 on the z-direction positive side.
  • the range of the substrate stretched portion 32 in the x direction is the same as the range of the laminated structure portion 18 in the x direction.
  • the passivation film 13 is formed on the surface of the semiconductor substrate 1
  • the second electrode 7 is formed on the surface of the passivation film 13 by extending from the upper part of the ridge portion 14.
  • the first electrode 17 (not shown) in FIG. 29 is also formed on the surface of the passivation film 13 by extending from the upper part of the laminated structure portion 18 like the second electrode 7.
  • the substrate stretching portion 32 is formed by dry etching or wet etching such as RIE after forming the laminated structure portion 18 having the embedded layer 12 in the waveguide type light receiving element of the fourth embodiment.
  • a semiconductor is formed by forming an insulating film or a photoresist mask on the surface of the laminated structure portion 18 by a general lithography technique, and by dry etching or wet etching such as RIE in a state where the portion to be etched is opened. Etch up to substrate 1. After that, the passivation film 13, the second electrode 7, the first electrode 17, and the back surface electrode 9 are formed.
  • the chip size of the waveguide type light receiving element 100 of the fifth embodiment is the same as the chip size of the waveguide type light receiving element 100 of the fourth embodiment. Since the waveguide type light receiving element 100 of the fifth embodiment includes the substrate extending portion 32, the area of the laminated structure portion 18 on which the ridge portion 14 is formed facing the semiconductor substrate 1 is the waveguide of the fourth embodiment. It is smaller than the mold light receiving element 100. Therefore, the waveguide type light receiving element 100 of the fifth embodiment faces the undoped light absorbing layer 4 formed only in the ridge portion 14 or the light absorbing layer 4 having an impurity concentration lower than that of the impurity-doped light absorbing layer 8.
  • the facing area which is the area of one contact layer 2
  • the second contact layer 6 connected to the second electrode and the first electrode 17 connected to the first electrode 17 are connected.
  • the capacitance between the contact layer 2 and the waveguide type light receiving element that is, the capacity of the waveguide type light receiving element can be reduced as compared with the waveguide type light receiving element 100 of the fourth embodiment.
  • the waveguide type light receiving element 100 of the fifth embodiment has the effect of the waveguide type light receiving element 100 of the fourth embodiment, and has a larger capacity of the waveguide type light receiving element than the waveguide type light receiving element 100 of the fourth embodiment. Is small, so that the high-speed response can be improved as compared with the waveguide type light receiving element 100 of the fourth embodiment.
  • FIG. 30 is a perspective view of the waveguide type light receiving element according to the sixth embodiment.
  • 31 is a cross-sectional view taken along the broken line shown by B5-B5 of FIG. 30, and
  • FIG. 32 is a surface view of the core layer of FIG.
  • the cross-sectional views taken along the broken line shown by A3-A3 in FIG. 30, the broken line shown by C2-C2, and the broken line shown by DD are the same as those in FIGS. 14, 8, and 15, respectively.
  • the undoped light absorbing layer 11 is formed on the x-direction side surface of the p-type impurity-doped light absorbing layer 8 as compared with the waveguide type light receiving element 100 of the second embodiment. It differs in that it is. A portion different from the waveguide type light receiving element 100 of the second embodiment will be mainly described.
  • the undoped light absorption layer 11 is formed between the p-type impurity-doped light absorption layer 8 and the light incident surface 21, and the undoped light absorption layer 11 is formed with respect to the traveling direction of the signal light 20.
  • the undoped light absorption layer 11 is formed on the outer side of the parallel side surface, that is, the side surface in the x direction. Therefore, the core layer 30 in the waveguide type light receiving element 100 of the sixth embodiment is a side surface of the impurity-doped light absorption layer 8 in the x direction perpendicular to the z direction in which the signal light 20 travels and the y direction perpendicular to the semiconductor substrate 1.
  • the corner portion of the interface between the p-type impurity-doped light absorbing layer 8 and the n-type first clad layer 3 or the n-type second clad layer 5, that is, the light incident surface 21 Since the electric field tends to concentrate on the interface boundary portion extending in the x direction on the side, when strong light is incident, that portion may be structurally weakened. Since the interface boundary portion where the electric field is concentrated can be made smaller than that of the waveguide type light receiving element 100 of the second embodiment, the waveguide type light receiving element 100 of the sixth embodiment is more than the waveguide type light receiving element 100 of the second embodiment. Even if strong light is incident, the structural intensity can be maintained.
  • the waveguide type light receiving element 100 of the sixth embodiment is the waveguide type light receiving element of the second embodiment except that the undoped light absorption layer 11 is formed on the x-direction side surface of the p-type impurity-doped light absorption layer 8. Since it is the same as 100, it has the same effect as the waveguide type light receiving element 100 of the second embodiment. Further, the waveguide type light receiving element 100 of the sixth embodiment can maintain the structural intensity even when stronger light is incident than the waveguide type light receiving element 100 of the second embodiment, and can improve the reliability. can.
  • Embodiment 7 is a perspective view of the waveguide type light receiving element according to the seventh embodiment, and FIG. 34 is a cross-sectional view taken along the broken line shown by A7 to A7 of FIG. 33. 35 is a cross-sectional view taken along the broken line shown by B6-B6 of FIG. 33, and FIG. 36 is a cross-sectional view taken along the broken line shown by C4-C4 of FIG. 33.
  • the cross-sectional views taken along the broken line shown by FF in FIG. 33 and the broken line shown by GG are the same as those in FIGS. 26 and 27, respectively.
  • the waveguide type light receiving element 100 of the seventh embodiment is between the core layer 30 and the n-type first clad layer 3 or the n-type second clad layer 5 with the waveguide type light receiving element 100 of the fifth embodiment. It differs in that the electronic traveling layer 15 is arranged in the.
  • FIGS. 34 to 36 an example in which the first conductive type is n type and the second conductive type is p type is shown.
  • the waveguide type light receiving element 100 of the seventh embodiment is modified to include the ridge portion 14 and the substrate extending portion 32 like the waveguide type light receiving element 100 of the fifth embodiment.
  • an electron traveling layer is formed between the core layer 30 and the n-type first clad layer 3 or the n-type second clad layer 5. It can also be said that 15 are arranged. A portion different from the waveguide type light receiving element 100 of the fifth embodiment and the waveguide type light receiving element 100 of the third embodiment will be mainly described.
  • the electron traveling layer 15 is an undoped epitaxial layer and has a property of not absorbing light, that is, a non-light absorption property.
  • the electron traveling layer 15 is, for example, InP, InGaAsP, AlInAs, AlGaInAs, or the like. Since the electron traveling layer 15 has non-light absorption, the electrons of the photo carrier travel on the electron traveling layer 15.
  • the first clad layer 3, the electron traveling layer 15, the core layer 30, and the second clad layer 5 constitute a waveguide layer 31.
  • the light absorption layer 4 is formed between the p-type impurity-doped light absorption layer 8 and the n-type first clad layer 3 or the n-type second clad layer 5.
  • the region of the undoped light absorbing layer 4 or the light absorbing layer 4 having an impurity concentration lower than that of the impurity-doped light absorbing layer 8 becomes wider and the capacity can be reduced.
  • the waveguide type light receiving element 100 of the third embodiment there is a photocarrier generated in the region where the light absorption layer 4 on the light incident surface 21 side is left, and the retention of holes is suppressed to further high-speed response. There was room for improvement.
  • the light absorption layer 4 is formed between the p-type impurity-doped light absorption layer 8 and the n-type first clad layer 3 or the n-type second clad layer 5. Therefore, there are a few holes generated in the portion of the light absorbing layer 4 on the side of the light incident surface 21 having a short length in the y direction.
  • the waveguide type light receiving element 100 of the seventh embodiment is different from the modified example of the waveguide type light receiving element 100 of the third embodiment and the waveguide type light receiving element 100 of the third embodiment, and the signal light 20 is a p-type impurity.
  • the waveguide type light receiving element 100 of the seventh embodiment can improve the high-speed response as compared with the modified example of the waveguide type light receiving element 100 of the fifth embodiment and the waveguide type light receiving element 100 of the third embodiment. ..
  • the electron traveling layer 15 is undoped, as described in the third embodiment, the undoped light absorption layer 4 or the region of the light absorption layer 4 having an impurity concentration lower than that of the impurity-doped light absorption layer 8 is undoped.
  • the area of the electronic traveling layer 15 becomes wider. Therefore, the capacity of the waveguide type light receiving element 100 of the seventh embodiment can be reduced as compared with that of the waveguide type light receiving element 100 of the fifth embodiment. Therefore, the waveguide type light receiving element 100 of the seventh embodiment can exhibit the effect of the waveguide type light receiving element 100 of the fifth embodiment and can achieve higher speed operation than the waveguide type light receiving element 100 of the fifth embodiment. ..
  • the first conductive type is n type and the second conductive type is p type
  • the first conductive type is p type and the second conductive type is n. It may be a mold.
  • the electron traveling layer 15 is formed between the n-type second clad layer 5 and the core layer 30. That is, in FIGS. 34 to 36, the electron traveling layer 15 arranged between the first clad layer 3 and the core layer 30 has moved between the n-type second clad layer 5 and the core layer 30. It becomes a figure.
  • a light absorption layer is formed between the p-type impurity-doped light absorption layer 8 and the n-type first clad layer 3 or the n-type second clad layer 5.
  • the electronic traveling layer 15 may be formed instead of 4.
  • the light absorption layer 4 on the positive side in the y direction or the light absorption layer 4 on the negative side in the y direction of the p-type impurity-doped light absorption layer 8 replaces the undoped electron traveling layer 15 having non-light absorption, so that the speed is high. Responsiveness can be improved.

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