JPWO2021171393A1 - - Google Patents

Info

Publication number
JPWO2021171393A1
JPWO2021171393A1 JP2022502634A JP2022502634A JPWO2021171393A1 JP WO2021171393 A1 JPWO2021171393 A1 JP WO2021171393A1 JP 2022502634 A JP2022502634 A JP 2022502634A JP 2022502634 A JP2022502634 A JP 2022502634A JP WO2021171393 A1 JPWO2021171393 A1 JP WO2021171393A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022502634A
Other languages
Japanese (ja)
Other versions
JP7350974B2 (ja
JPWO2021171393A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021171393A1 publication Critical patent/JPWO2021171393A1/ja
Publication of JPWO2021171393A5 publication Critical patent/JPWO2021171393A5/ja
Application granted granted Critical
Publication of JP7350974B2 publication Critical patent/JP7350974B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/413—Optical elements or arrangements directly associated or integrated with the devices, e.g. back reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/222—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN heterojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers

Landscapes

  • Light Receiving Elements (AREA)
JP2022502634A 2020-02-26 2020-02-26 導波路型受光素子 Active JP7350974B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2020/007584 WO2021171393A1 (ja) 2020-02-26 2020-02-26 導波路型受光素子

Publications (3)

Publication Number Publication Date
JPWO2021171393A1 true JPWO2021171393A1 (https=) 2021-09-02
JPWO2021171393A5 JPWO2021171393A5 (https=) 2022-08-15
JP7350974B2 JP7350974B2 (ja) 2023-09-26

Family

ID=77490804

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022502634A Active JP7350974B2 (ja) 2020-02-26 2020-02-26 導波路型受光素子

Country Status (4)

Country Link
US (1) US11978812B2 (https=)
JP (1) JP7350974B2 (https=)
CN (1) CN115136327B (https=)
WO (1) WO2021171393A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117199155A (zh) * 2023-11-06 2023-12-08 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7679259B2 (ja) * 2021-08-20 2025-05-19 浜松ホトニクス株式会社 光検出器
WO2023192918A2 (en) 2022-03-29 2023-10-05 Ostentus Therapeutics, Inc. Anti-oncogenic phytochemicals and methods and uses for treating cancer

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012912A (ja) * 1996-06-20 1998-01-16 Nec Corp 導波路型半導体受光素子
JPH10256589A (ja) * 1997-03-06 1998-09-25 Nec Corp 導波路型半導体受光素子およびその製造方法
JPH11340497A (ja) * 1998-05-28 1999-12-10 Nec Corp 導波路型半導体光素子
CN108010982A (zh) * 2017-12-01 2018-05-08 北京工业大学 波导复合式耦合型单行载流子探测器
JP2019016694A (ja) * 2017-07-06 2019-01-31 富士通株式会社 受光装置、これを用いた光受信器、及び受光装置の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3505186B2 (ja) * 1996-06-13 2004-03-08 古河電気工業株式会社 半導体導波路型受光素子とその製造方法
US6417528B1 (en) 2000-01-28 2002-07-09 Agere Systems Guardian Corp. High speed semiconductor photodetector
JP2006066488A (ja) * 2004-08-25 2006-03-09 Mitsubishi Electric Corp 半導体受光素子およびその製造方法
JP2010512664A (ja) * 2006-12-11 2010-04-22 ルーメンツ リミテッド ライアビリティ カンパニー 酸化亜鉛多接合光電池及び光電子装置
JP5294558B2 (ja) * 2006-12-19 2013-09-18 三菱電機株式会社 埋込導波路型受光素子とその製造方法
US7919349B2 (en) * 2008-02-22 2011-04-05 Alcatel-Lucent Usa Inc. Photonic integration scheme
JP2010010450A (ja) 2008-06-27 2010-01-14 Mitsubishi Electric Corp 導波路型受光素子
CN105122469B (zh) * 2013-04-19 2017-03-08 富士通株式会社 半导体受光元件及其制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1012912A (ja) * 1996-06-20 1998-01-16 Nec Corp 導波路型半導体受光素子
JPH10256589A (ja) * 1997-03-06 1998-09-25 Nec Corp 導波路型半導体受光素子およびその製造方法
JPH11340497A (ja) * 1998-05-28 1999-12-10 Nec Corp 導波路型半導体光素子
JP2019016694A (ja) * 2017-07-06 2019-01-31 富士通株式会社 受光装置、これを用いた光受信器、及び受光装置の製造方法
CN108010982A (zh) * 2017-12-01 2018-05-08 北京工业大学 波导复合式耦合型单行载流子探测器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Y.-S. WU ET AL.: ""High-Performance Evanescently Edge Coupled Photodiodes With Partially p-Doped Photoabsorption Layer", IEEE PHOTONICS TECHNOLOGY LETTERS, vol. 17, no. 4, JPN6023031990, April 2005 (2005-04-01), pages 878 - 880, XP011128907, ISSN: 0005130322, DOI: 10.1109/LPT.2005.851978 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117199155A (zh) * 2023-11-06 2023-12-08 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法
CN117199155B (zh) * 2023-11-06 2024-02-13 杭州特洛伊光电技术有限公司 一种波导型可见光及近红外光探测器结构与制备方法

Also Published As

Publication number Publication date
CN115136327B (zh) 2024-07-30
WO2021171393A1 (ja) 2021-09-02
US11978812B2 (en) 2024-05-07
US20230055105A1 (en) 2023-02-23
JP7350974B2 (ja) 2023-09-26
CN115136327A (zh) 2022-09-30

Similar Documents

Publication Publication Date Title
BR112023005462A2 (https=)
BR112023012656A2 (https=)
BR112021014123A2 (https=)
BR112023009656A2 (https=)
BR112022009896A2 (https=)
BR112021017747A2 (https=)
JPWO2021171393A1 (https=)
BR112022024743A2 (https=)
BR112022026905A2 (https=)
BR112023011738A2 (https=)
BR112023004146A2 (https=)
BR112023006729A2 (https=)
BR102021018859A2 (https=)
BR102021007058A2 (https=)
BR112023016292A2 (https=)
BR112023011610A2 (https=)
BR112023011539A2 (https=)
BR112023008976A2 (https=)
BR102021020147A2 (https=)
BR102021018926A2 (https=)
BR102021018167A2 (https=)
BR102021017576A2 (https=)
BR102021016837A2 (https=)
BR102021016551A2 (https=)
BR102021015450A8 (https=)

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220616

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220616

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230816

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230913

R151 Written notification of patent or utility model registration

Ref document number: 7350974

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151