JP7338713B2 - キャリア実装構造 - Google Patents
キャリア実装構造 Download PDFInfo
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- JP7338713B2 JP7338713B2 JP2022010822A JP2022010822A JP7338713B2 JP 7338713 B2 JP7338713 B2 JP 7338713B2 JP 2022010822 A JP2022010822 A JP 2022010822A JP 2022010822 A JP2022010822 A JP 2022010822A JP 7338713 B2 JP7338713 B2 JP 7338713B2
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Description
最初に本願発明の実施形態を列記して説明する。
本発明案の一態様(1)に係るキャリア実装構造は、基板上に設けられ配線層を含む側壁を有する筐体内で、前記側壁に隣接して四角柱状のキャリアを前記基板上に実装したキャリア実装構造であって、前記側壁に対向する前記キャリアの前記基板への載置面の角部に第1の切欠きが設けられており、前記キャリアと前記基板との間には、AuSn半田が介在され、前記基板と前記側壁とはAgCu半田によって固着されており、前記AgCu半田が前記基板の表面に析出している。
本実施形態によれば、キャリアの基板に対向する面の角部に第1の切欠きが設けられているため、キャリアを基板に半田付けする際に、余剰半田を切欠き内に吸収、保持することで半田ボールの形成を抑制することが可能になる。このため、キャリアを筐体の多層セラミック配線層を含む側壁に近接させて配置できるとともに、キャリアを小型化することが可能になる。
また、本実施形態によれば、析出したAgCu半田の上にキャリアを配置する際に、AgCu半田の影響を保証するため、キャリアと基板との間に介在させる半田の量を多くしたとしても、第1の切欠きによって余剰半田が基板上に広く流れだすことを抑制することが可能となり、キャリアを側壁に近接して実装することができる。
本実施形態によれば、析出したAgCu半田の表面の算術平均粗さRaが0.1μm以上10μm以下の粗面であっても、粗面の凹凸を補償した上で、キャリアを側壁に近接して実装することができる。
本実施形態によれば、キャリア上に電子部品を半田によって搭載する際に、半田ボールの形成を抑制することが可能となるため、より確実にキャリアを側壁に近接して実装することができ、キャリア上に搭載した電子部品と多層セラミック配線層との間の配線を短くすることができる。
本実施形態によれば、余剰半田を確実に切欠き内に吸収、保持できる。
本実施形態によれば、切欠きの表面がTi/Pt/Auの多層金属膜でメタライズされているため、余剰のAuSn半田を確実に切欠き内に吸収・保持できる。
本実施形態によれば、配線層を含む実装物である配線ベースに隣接させてキャリアを実装する際、あるいは、キャリアに隣接させて配線ベースを実装する際にも、キャリアと基板との間に介在した余剰半田が基板上に流れださないため、キャリアと配線ベースとの間隙を小さくすることができる。このため、キャリアに搭載した電子部品と多層セラミック配線層との間の配線等を短くすることができ、良好な高周波特性の実現と小型高密度の実装が可能になる。
これにより、キャリアに隣接させて実装した配線ベースと基板との間に介在した余剰半田が基板上に流れださないため、キャリアと配線ベースとの間隙を小さくすることができる。
本実施形態によれば、キャリアの基板に対向する面の角部に第1の切欠きが設けられているため、キャリアを基板に半田付けする際に、余剰半田を切欠き内に吸収、保持することで半田ボールの形成を抑制することが可能になる。このため、キャリアを筐体の多層セラミック配線層を含む配線部材に近接させて配置できるとともに、キャリアを小型化することが可能になる。また、キャリアの側壁と反対側の基板上に配線部材を実装する際に、余剰半田が基板上に流れださないため、キャリアと配線部材との間隙を小さくすることができる。このため、キャリアに搭載した電子部品と多層セラミック配線層を含む配線部材との間の配線等を短くすることができ、良好な高周波特性を実現と小型高密度の実装が可能になる。
また、本実施形態によれば、析出したAgCu半田の上にキャリアを配置する際に、AgCu半田の影響を保証するため、キャリアと基板との間に介在させる半田の量を多くしたとしても、第1の切欠きによって余剰半田が基板上に広く流れだすことを抑制することが可能となり、キャリアを配線部材に近接して実装することができる。
本発明に係るキャリア実装構造の具体例を、発光モジュールに適用した場合について、以下に図面を参照しながら説明する。なお、本発明は以下の例示に限定されるものではなく、特許請求の範囲によって示され、特許請求の範囲と均等の意味および範囲内での全ての変更が含まれることが意図される。また、複数の実施形態について組み合わせが可能である限り、本発明は任意の実施形態を組み合わせたものを含む。なお、以下の説明において、異なる図面においても同じ符号を付した構成は同様のものであるとして、その説明を省略する場合がある。
まず、AlN、Al2O3等のセラミック製の素基板であって、複数のキャリア21を取ることが可能な大面積基板21’に、キャリア21のサイズに相当する領域を囲むV溝27を形成する。V溝27の傾斜は下面に対しそれぞれ約45°であり、深さは0.1±0.05mm、すなわち、0.05mm以上0.15mm以下としている。このため、切欠きを設けた面の切欠きの縁と角部からの距離が、0.1±0.05mmの距離となる。また、キャリア21の大きさは、搭載するドライバICの大きさにもよるが、縦横高さともに数ミリ程度の大きさである。
Claims (8)
- 基板上に設けた配線層を含む側壁を有する筐体内で、前記側壁に隣接して四角柱状のキャリアを前記基板上に実装したキャリア実装構造であって、
前記側壁に対向する前記キャリアの前記基板への載置面の角部に第1の切欠きが設けられており、前記キャリアと前記基板との間には、AuSn半田が介在され、
前記基板と前記側壁とはAgCu半田によって固着されており、前記AgCu半田が前記基板の表面に析出しているキャリア実装構造。 - 析出した前記AgCu半田の表面の算術平均粗さRaが0.1μm以上10μm以下である請求項1に記載のキャリア実装構造。
- 前記キャリアの前記基板と反対側の面の角部に第2の切欠きが形成されており、前記キャリアは前記反対側の面の角部を含む領域に配線部材を搭載している請求項1または請求項2に記載のキャリア実装構造。
- 前記第1の切欠きおよび前記第2の切欠きを設けた面の前記第1の切欠きおよび前記第2の切欠きのそれぞれの縁と前記第1の切欠きおよび前記第2の切欠きがそれぞれ形成された前記角部からの距離が、0.1±0.05mmの距離である請求項3に記載のキャリア実装構造。
- 前記キャリアの前記基板に対向する面および前記第1の切欠きの表面に、Ti/Pt/Auの多層金属膜が形成されている請求項1から請求項4のいずれか一項に記載のキャリア実装構造。
- 前記基板上に設けた配線層を含む配線ベースに隣接して四角柱状のキャリアを前記基板上に実装し、前記キャリアの前記基板への載置面と前記配線ベースに対向する面の角部に前記第1の切欠きが設けられ、
前記基板と前記配線ベースとはAgCu半田によって固着されている請求項1から請求項5のいずれか一項に記載のキャリア実装構造。 - 前記配線ベースの前記基板への載置面と前記キャリアに対向する面の角部に第3の切欠きが形成されている、請求項6に記載のキャリア実装構造。
- 基板上に設けた配線層を含む配線部材を有する筐体内で、前記配線部材に隣接して四角柱状のキャリアを前記基板上に実装したキャリア実装構造であって、
前記配線部材に対向する前記キャリアの前記基板への載置面の角部に第1の切欠きが設けられており、前記キャリアと前記基板との間には、AuSn半田が介在され、
前記基板と前記配線部材とはAgCu半田によって固着されており、前記AgCu半田が前記基板の表面に析出しているキャリア実装構造。
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