JP7333675B2 - リフトピン、半導体製造装置およびリフトピン製造方法 - Google Patents

リフトピン、半導体製造装置およびリフトピン製造方法 Download PDF

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Publication number
JP7333675B2
JP7333675B2 JP2022538113A JP2022538113A JP7333675B2 JP 7333675 B2 JP7333675 B2 JP 7333675B2 JP 2022538113 A JP2022538113 A JP 2022538113A JP 2022538113 A JP2022538113 A JP 2022538113A JP 7333675 B2 JP7333675 B2 JP 7333675B2
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Prior art keywords
lift pin
substrate
lift
semiconductor manufacturing
manufacturing apparatus
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Japanese (ja)
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JPWO2022162928A5 (zh
JPWO2022162928A1 (zh
Inventor
宗之 松本
宏和 福井
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株式会社 天谷製作所
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/08—Reaction chambers; Selection of materials therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2022538113A 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法 Active JP7333675B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/003466 WO2022162928A1 (ja) 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法

Publications (3)

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JPWO2022162928A1 JPWO2022162928A1 (zh) 2022-08-04
JPWO2022162928A5 JPWO2022162928A5 (zh) 2023-01-04
JP7333675B2 true JP7333675B2 (ja) 2023-08-25

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JP2022538113A Active JP7333675B2 (ja) 2021-02-01 2021-02-01 リフトピン、半導体製造装置およびリフトピン製造方法

Country Status (4)

Country Link
JP (1) JP7333675B2 (zh)
KR (2) KR20240042203A (zh)
CN (1) CN115210859A (zh)
WO (1) WO2022162928A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267217A (ja) 2000-03-17 2001-09-28 Tokyo Electron Ltd 加熱処理装置
JP2003218003A (ja) 2002-01-21 2003-07-31 Toray Ind Inc 基板加熱装置
CN203434136U (zh) 2013-07-16 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 升针机构和升举装置
WO2018142788A1 (ja) 2017-02-02 2018-08-09 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびシリコンエピタキシャルウェーハの製造方法
US20190252229A1 (en) 2018-02-12 2019-08-15 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2584997Y2 (ja) * 1992-02-04 1998-11-11 株式会社東京精密 プロービング装置用半導体ウエハステージ
KR100714200B1 (ko) 2000-11-04 2007-05-02 엘지.필립스 엘시디 주식회사 건식식각 장치
JP4783762B2 (ja) * 2007-08-31 2011-09-28 東京エレクトロン株式会社 基板載置台および基板処理装置
KR20090130786A (ko) * 2008-06-16 2009-12-24 주식회사 아이피에스 진공처리장치의 리프트장치 및 그 제어방법
KR20130051686A (ko) * 2011-11-10 2013-05-21 엘지디스플레이 주식회사 기판 착탈 장치
JP6435992B2 (ja) 2015-05-29 2018-12-12 株式会社Sumco エピタキシャル成長装置、エピタキシャルウェーハの製造方法およびエピタキシャル成長装置用リフトピン

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001267217A (ja) 2000-03-17 2001-09-28 Tokyo Electron Ltd 加熱処理装置
JP2003218003A (ja) 2002-01-21 2003-07-31 Toray Ind Inc 基板加熱装置
CN203434136U (zh) 2013-07-16 2014-02-12 北京北方微电子基地设备工艺研究中心有限责任公司 升针机构和升举装置
WO2018142788A1 (ja) 2017-02-02 2018-08-09 株式会社Sumco リフトピン、該リフトピンを用いたエピタキシャル成長装置およびシリコンエピタキシャルウェーハの製造方法
US20190252229A1 (en) 2018-02-12 2019-08-15 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact

Also Published As

Publication number Publication date
KR20220111681A (ko) 2022-08-09
KR20240042203A (ko) 2024-04-01
CN115210859A (zh) 2022-10-18
WO2022162928A1 (ja) 2022-08-04
JPWO2022162928A1 (zh) 2022-08-04
KR102651374B1 (ko) 2024-03-26

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