JP7333486B2 - セラミックス焼成用セッター - Google Patents
セラミックス焼成用セッター Download PDFInfo
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- JP7333486B2 JP7333486B2 JP2022568570A JP2022568570A JP7333486B2 JP 7333486 B2 JP7333486 B2 JP 7333486B2 JP 2022568570 A JP2022568570 A JP 2022568570A JP 2022568570 A JP2022568570 A JP 2022568570A JP 7333486 B2 JP7333486 B2 JP 7333486B2
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- setter
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- boron nitride
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- 239000000919 ceramic Substances 0.000 title claims description 116
- 238000010304 firing Methods 0.000 title claims description 116
- 239000011148 porous material Substances 0.000 claims description 66
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 65
- 229910052582 BN Inorganic materials 0.000 claims description 48
- 238000009826 distribution Methods 0.000 claims description 15
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 10
- 229910052753 mercury Inorganic materials 0.000 claims description 10
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims description 7
- 239000011575 calcium Substances 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- 239000000843 powder Substances 0.000 description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 24
- 239000001301 oxygen Substances 0.000 description 24
- 229910052760 oxygen Inorganic materials 0.000 description 24
- 238000005245 sintering Methods 0.000 description 24
- 239000002245 particle Substances 0.000 description 19
- 239000011812 mixed powder Substances 0.000 description 18
- 238000005452 bending Methods 0.000 description 17
- 239000011230 binding agent Substances 0.000 description 17
- 239000000203 mixture Substances 0.000 description 17
- 238000000034 method Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 12
- 238000005238 degreasing Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- 238000000465 moulding Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000002156 mixing Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 3
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 3
- 239000000292 calcium oxide Substances 0.000 description 3
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000007088 Archimedes method Methods 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 238000009694 cold isostatic pressing Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004993 emission spectroscopy Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000013001 point bending Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- GNLJOAHHAPACCT-UHFFFAOYSA-N 4-diethoxyphosphorylmorpholine Chemical compound CCOP(=O)(OCC)N1CCOCC1 GNLJOAHHAPACCT-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000009837 dry grinding Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
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Description
容器に、アモルファス窒化ホウ素粉末(デンカ株式会社製、全酸素量:1.5質量%、窒化ホウ素純度97.0%)が79質量%、六方晶窒化ホウ素粉末(デンカ株式会社製、全酸素量:0.3質量%、窒化ホウ素純度:99.0%、平均粒径:15μm)が20質量%となるようにそれぞれ測り取り、焼結助剤(酸化ホウ素)を1質量%となるように加えた後に、ボールミルにて解砕及び混合を行い、窒化物の混合粉末を調製した。なお、窒化ホウ素粉末(アモルファス窒化ホウ素粉末及び六方晶窒化ホウ素粉末の混合粉末)の全酸素量は1.2質量%である。
容器に、アモルファス窒化ホウ素粉末(デンカ株式会社製、全酸素量:1.5質量%、窒化ホウ素純度97.0%)が40質量%、六方晶窒化ホウ素粉末(デンカ株式会社製、全酸素量:0.3質量%、窒化ホウ素純度:99.0%、平均粒径:15μm)が60質量%となるようにそれぞれ測り取り、有機バインダー、水を加え混合後、乾燥造粒し、窒化物の混合粉末を得た。得られた上記混合粉末を、冷間等方加圧(CIP)装置(株式会社神戸製鋼所製、商品名:ADW800)に充填し、上記混合粉末に500MPaの圧力をかけて圧縮し成形体を得た。得られた成形体を、有機バインダーを分解除去するために、600℃の加熱温度で5時間加熱処理し、混合物から有機バインダー成分を分解除去し脱脂体を得た。その後、バッチ式高周波炉(富士電波工業株式会社製)を用いて1400℃で2時間保持し(第一焼成)、その後、2050℃で10時間保持(第二焼成)して焼結させることによって、窒化物焼結体を調製した。なお、焼成は、炉内に窒素を標準状態で流量を10L/分となるように流しながら、炉内を窒素雰囲気下に調整し、0.1MPa(常圧)の圧力下で行った。なお、窒化ホウ素粉末(アモルファス窒化ホウ素粉末及び六方晶窒化ホウ素粉末の混合粉末)の全酸素量は0.8質量%である。
成型工程における冷間等方加圧(CIP)圧力を100MPaに変更したこと以外は、実施例2と同様にして、セラミックス焼成用セッターを調製した。
混合粉末の調製に用いたアモルファス窒化ホウ素粉末を、アモルファス窒化ホウ素粉末(デンカ株式会社製、全酸素量:2.0質量%、窒化ホウ素純度:96.2%)に変更したこと以外は、実施例2と同様にして、セラミックス焼成用セッターを調製した。なお、窒化ホウ素粉末(アモルファス窒化ホウ素粉末及び六方晶窒化ホウ素粉末の混合粉末)の全酸素量は1.0質量%である。
第二焼成における加熱温度を2000℃に変更したこと以外は、実施例2と同様にして、セラミックス焼成用セッターを調製した。
第一焼成における加熱温度を1800℃に変更したこと、及び第二焼成における加熱温度を2000℃に変更したこと以外は、実施例2と同様にして、セラミックス焼成用セッターを調製した。
アモルファス窒化ホウ素粉末(デンカ株式会社製、全酸素量:1.8質量%、窒化ホウ素純度96.6%)のみを用い(六方晶窒化ホウ素粉末を使用せずに)、焼結助剤として酸化ホウ素を1質量%及び酸化カルシウムを0.5質量%となるように加え、解砕及び混合した粉末を混合粉末として使用したこと、第一焼成における加熱温度を1400℃に、保持時間を2時間に変更したこと、及び第二焼成における加熱温度を1650℃に、保持時間を5時間に変更したこと以外は、実施例1と同様にして、セラミックス焼成用セッターを調製した。
アモルファス窒化ホウ素粉末(デンカ株式会社製、全酸素量:2.8質量%、窒化ホウ素純度:95.0%)が70質量%、六方晶窒化ホウ素粉末(デンカ株式会社製、全酸素量:0.3質量%、窒化ホウ素純度:99.0%、平均粒径:15μm)が30質量%となるように混合し、焼結助剤として酸化ホウ素を1質量%及び酸化カルシウムを0.5質量%となるように加え、解砕及び混合した粉末を混合粉末として使用したこと、第一焼成における加熱温度を1400℃に、保持時間を2時間に変更したこと、並びに、第二焼成における加熱温度を1550℃に、保持時間を5時間に変更したこと以外は、実施例1と同様にして、セラミックス焼成用セッターを調製した。なお、窒化ホウ素粉末(アモルファス窒化ホウ素粉末及び六方晶窒化ホウ素粉末の混合粉末)の全酸素量は2.1質量%である。
CIP成形の圧力を30MPaに変更したこと、及び、第一焼成を行わず、第二焼成の加熱温度を2000℃に変更したこと以外は、実施例2と同様にして、セラミックス焼成用セッターを調製した。
CIP成形の圧力を50MPaに変更したこと、及び、第一焼成を行わず、第二焼成の加熱温度を2000℃に変更したこと以外は、実施例2と同様にして、セラミックス焼成用セッターを調製した。
実施例1~6及び比較例1~4で調製したセラミックス焼成用セッターについて、気孔率、水銀ポロシメーターによって測定される気孔径が0.2~0.9μmである気孔の割合、鉄の含有量、カルシウムの含有量、及び600℃における熱膨張率の測定を行った。結果を表1に示す。
実施例1~6及び比較例1~4で調製したセラミックス焼成用セッターのそれぞれを用いて、セラミックス焼成を行い、得られるセラミック板の強度及び色むらの観点から、セッターとしての性能を評価した。なお、評価にあたり、セラミックス焼成用セッターは縦:100mm、横:100mm、厚さ:5mmに加工して用いた。
上述のようにして調製されたセラミック板の強度を測定し、下記の基準で評価した。セラミック板の強度は、JIS R 1601:2008「ファインセラミックスの室温曲げ強さ試験方法」の記載に準拠して、市販の万能試験機を用いて測定した。測定した曲げ強さの値を以下基準で評価した。
A:曲げ強さが30MPa超である。
B:曲げ強さが15~30MPaである。
C:曲げ強さが15MPa未満である。
上述のようにして調製されたセラミック板の色むらを定量的に評価するため、以下のようにして酸素量測定し、以下の基準で評価した。窒化ケイ素からなるセラミック板の1つの角から中央部へ向かって対角上に、縦:5mm×横:5mmの寸法のサンプルを採取していき、各サンプルを粉砕、粉末状にして、セラミックス焼成用セッターと同様に酸素・窒素分析装置を用いて酸素量測定した。
A:測定した酸素量の最大値と最小値の差が0.10以下である。
B:測定した酸素量の最大値と最小値の差が0.10超0.20以下である。
C:測定した酸素量の最大値と最小値の差が0.20超である。
Claims (7)
- 複数の気孔を有する窒化ホウ素焼結板で構成され、
気孔率が8体積%以上38体積%以下であり、
水銀ポロシメーターによって測定される気孔径が0.2~0.9μmである気孔の割合が全気孔の76~95%である、セラミックス焼成用セッター。 - 600℃における熱膨張率が-1.00ppm/K以上である、請求項1に記載のセラミックス焼成用セッター。
- 前記気孔に占める開気孔の割合が40%以上である、請求項1又は2に記載のセラミックス焼成用セッター。
- 鉄の含有量が30.0ppm以下である、請求項1~3のいずれか一項に記載のセラミックス焼成用セッター。
- カルシウムの含有量が100.0ppm以下である、請求項1~4のいずれか一項に記載のセラミックス焼成用セッター。
- 気孔径の分布曲線におけるピーク位置が0.25μm以上である、請求項1~5のいずれか一項に記載のセラミックス焼成用セッター。
- 気孔径の分布曲線におけるピーク位置が0.80μm以下である、請求項1~6のいずれか一項に記載のセラミックス焼成用セッター。
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