JP7323527B2 - 半導体発光装置及び外部共振型レーザ装置 - Google Patents
半導体発光装置及び外部共振型レーザ装置 Download PDFInfo
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Description
実施の形態に係る半導体発光装置について説明する。
まず、実施の形態に係る半導体発光装置が備える半導体発光素子の構成について、図1A及び図1Bを用いて説明する。図1A及び図1Bは、それぞれ本実施の形態に係る半導体発光素子601の構成を示す模式的な上面図及び断面図である。図1Bは、図1AのIB-IB線における半導体発光素子601の断面図である。
次に、本実施の形態に係る半導体発光素子601の製造方法について、図2A~図2Iを用いて説明する。図2A~図2Iは、本実施の形態に係る半導体発光素子601の製造方法における各工程を示す断面図である。
次に、本実施の形態に係る半導体発光素子601が実装された半導体発光装置について、図3Aを用いて形態を説明する。図3Aは、本実施の形態に係る半導体発光装置602の構成を示す模式的な断面図である。図3Aに示すように、半導体発光装置602は、半導体発光素子601と、サブマウント100と、を備える。サブマウント100は、第1基台101と、第1電極102aと、第3電極102bと、第1接着層103aと、第3接着層103bとを有する。
次に、本実施の形態に係る半導体発光装置602を用いた外部共振型レーザ装置について図4を用いて説明する。図4は、本実施の形態に係る外部共振型レーザ装置605の構成を示す模式図である。図4には、半導体発光装置602の5本の導波路部40a1~40a5から出射された光の光路も併せて示されている。
次に、本実施の形態に係る半導体発光装置602の作用効果について、図5を用いて説明する。図5は、本実施の形態に係る半導体発光装置602の各導波路部の温度の概要を示すグラフである。図5において、本実施の形態に係る半導体発光装置602における半導体発光素子601の各導波路部の温度が実線で示されており、特許文献1に記載されたような構成を有する比較例の半導体発光装置の各導波路部の温度が破線で示されている。従来の構造では、図5に破線で示すように、中央部の導波路部の温度が、端部の導波路部の温度よりも高い。これは、中央部の導波路部ほど外側の導波路部で発生した熱の影響を受けるためである。これに対し、実線で示す本実施の形態に係る半導体発光装置602では、一方の端部側の導波路部の温度を下げ、他方の端部側の導波路部の温度を上げることで、温度分布に傾斜をつけている。これは、図3Aに示したように、一方の端部側(図3Aの左側)の第1接着層103aの厚さを、他方の端部側(図3Aの右側)の第1接着層103aの厚さよりも薄くすることで、一方の端部側での放熱効果を高めた効果である。この効果について具体的に説明する。第1接着層103aは、金スズ合金で構成されており、その熱伝導率は57W/m・Kである。また、基板610は、GaNで構成されており、その熱伝導率は200W/m・Kである。接合に用いている第1接着層103aの熱伝導率が基板610の熱伝導率よりも小さいため、第1接着層103aは薄い方が放熱性は向上する。一方、半導体発光素子601と第1基台101との接合強度を保つためには、第1接着層103aはある程度の厚さが必要となるため、一様に第1接着層103aを薄くすることはできない。そこで本実施の形態では、基板610の左側を厚くすることで、その直下の第1接着層103aを薄くし、左側のみ放熱性を向上させた。なお、図3Bに示す半導体発光装置603でも効果は同様である。半導体発光装置603においても第1接着層203の厚さを異ならせることで、導波路部の温度分布に傾斜をつけている。
以上、本開示に係る半導体発光素子について、実施の形態に基づいて説明したが、本開示は、上記実施の形態に限定されるものではない。
5D 回折格子
5L 光学レンズ
5P 光学系
20 第1半導体層
30 発光層
31 n側光ガイド層
32 活性層
33 p側光ガイド層
40 第2半導体層
40a1、40a2、40a3、40a4、40a5 導波路部
40b 平坦部
41 電子障壁層
42 p側クラッド層
43 p側コンタクト層
50 電極部材
51 p側電極
52 パッド電極
60 誘電体層
71、72、73、74、75 発光部
80 n側電極
91 第1保護膜
100、300、510 サブマウント
101、201、511 第1基台
102a、512a 第1電極
102b、512b 第3電極
103a、203、513a 第1接着層
103b、513b 第3接着層
200 放熱部
301 第2基台
302a 第2電極
302b 第4電極
303a 第2接着層
303b 第4接着層
601、601a、601b、601c、701 半導体発光素子
602、602a、602b、602c、603、702 半導体発光装置
605 外部共振型レーザ装置
610、610a、610b、610c、710 基板
1003 支持体
1006 導電性接着材
1007 金属配線体
1008 レーザ電極
1009 樹脂
1010 アレイ型半導体レーザ素子
1011、1012、1013、1014 ストライプ
Claims (7)
- 基板と、前記基板の上面に沿って配列された複数の発光部と、を有する半導体発光素子と、
前記基板の下面の下方に配置された第1基台と、
前記半導体発光素子を前記第1基台に接着する第1接着層と、を備え、
前記基板は、前記第1接着層より熱伝導率が高く、
前記第1接着層の厚さは、前記複数の発光部の配列方向の一方の端部側において、他方の端部側より小さく、
前記半導体発光素子の動作時において、前記複数の発光部のうち、前記一方の端部側の発光部の温度は、前記他方の端部側の発光部の温度より低い
半導体発光装置。 - 前記基板の厚さは、前記配列方向の前記一方の端部側において前記他方の端部側より大きい
請求項1記載の半導体発光装置。 - 前記基板の前記下面は、前記基板の上面に対して前記配列方向において傾斜している
請求項2記載の半導体発光装置。 - 前記基板の前記上面は、前記配列方向において、前記第1基台の前記第1接着層との接合面と平行である
請求項2又は3記載の半導体発光装置。 - さらに、前記半導体発光素子を挟んで前記第1基台とは反対側に配置された第2基台と、
前記半導体発光素子を前記第2基台に接着する第2接着層と、を備える
請求項1~4の何れか1項に記載の半導体発光装置。 - 前記第1基台は、前記第1接着層より熱伝導率が高い
請求項1~5の何れか1項に記載の半導体発光装置。 - 請求項1~6の何れか1項に記載の半導体発光装置と、
波長分散素子とを備える
外部共振型レーザ装置。
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