JP7309697B2 - 基板のフィーチャをコバルトで充填する方法および装置 - Google Patents
基板のフィーチャをコバルトで充填する方法および装置 Download PDFInfo
- Publication number
- JP7309697B2 JP7309697B2 JP2020516638A JP2020516638A JP7309697B2 JP 7309697 B2 JP7309697 B2 JP 7309697B2 JP 2020516638 A JP2020516638 A JP 2020516638A JP 2020516638 A JP2020516638 A JP 2020516638A JP 7309697 B2 JP7309697 B2 JP 7309697B2
- Authority
- JP
- Japan
- Prior art keywords
- cobalt
- feature
- substrate
- chamber
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
- H10W20/045—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
- H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
- H10D64/01332—Making the insulator
- H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
- H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
- H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
- H10P14/44—Physical vapour deposition [PVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6336—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0431—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
- H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
- H10P72/0602—Temperature monitoring
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/90—Thermal treatments, e.g. annealing or sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
- H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
- H10W20/059—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches by reflowing or applying pressure
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
- H10W20/4441—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal the principal metal being a refractory metal
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
- H10P72/0461—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the presence of two or more transfer chambers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemically Coating (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/711,169 | 2017-09-21 | ||
| US15/711,169 US10304732B2 (en) | 2017-09-21 | 2017-09-21 | Methods and apparatus for filling substrate features with cobalt |
| PCT/US2018/051509 WO2019060296A1 (en) | 2017-09-21 | 2018-09-18 | METHODS AND APPARATUS USED TO FILL SUBSTRATE CHARACTERISTICS WITH COBALT |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020534702A JP2020534702A (ja) | 2020-11-26 |
| JP2020534702A5 JP2020534702A5 (https=) | 2021-10-28 |
| JP7309697B2 true JP7309697B2 (ja) | 2023-07-18 |
Family
ID=65720533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020516638A Active JP7309697B2 (ja) | 2017-09-21 | 2018-09-18 | 基板のフィーチャをコバルトで充填する方法および装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10304732B2 (https=) |
| JP (1) | JP7309697B2 (https=) |
| KR (1) | KR102572732B1 (https=) |
| CN (1) | CN111133558B (https=) |
| TW (1) | TWI782094B (https=) |
| WO (1) | WO2019060296A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11410891B2 (en) | 2019-08-26 | 2022-08-09 | International Business Machines Corporation | Anomaly detection and remedial recommendation |
| US11164815B2 (en) | 2019-09-28 | 2021-11-02 | International Business Machines Corporation | Bottom barrier free interconnects without voids |
| US11776980B2 (en) * | 2020-03-13 | 2023-10-03 | Applied Materials, Inc. | Methods for reflector film growth |
| CN211879343U (zh) * | 2020-04-10 | 2020-11-06 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
| US11527437B2 (en) | 2020-09-15 | 2022-12-13 | Applied Materials, Inc. | Methods and apparatus for intermixing layer for enhanced metal reflow |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008141050A (ja) | 2006-12-04 | 2008-06-19 | Ulvac Japan Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
| JP2015519725A (ja) | 2012-03-28 | 2015-07-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | シームレスのコバルト間隙充填を可能にする方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960015719A (ko) * | 1994-10-12 | 1996-05-22 | 이온 충돌을 이용하여 반도체 기판상에 평탄한 층을 형성하기 위한 방법 및 장치 | |
| US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| WO2003030224A2 (en) * | 2001-07-25 | 2003-04-10 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
| US20070184652A1 (en) | 2006-02-07 | 2007-08-09 | Texas Instruments, Incorporated | Method for preparing a metal feature surface prior to electroless metal deposition |
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| US20080132050A1 (en) * | 2006-12-05 | 2008-06-05 | Lavoie Adrien R | Deposition process for graded cobalt barrier layers |
| KR20090103058A (ko) | 2008-03-27 | 2009-10-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 이의 제조 방법 |
| US20090246952A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of forming a cobalt metal nitride barrier film |
| US20090269507A1 (en) * | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
| US8795487B2 (en) | 2010-03-31 | 2014-08-05 | Applied Materials, Inc. | Physical vapor deposition chamber with rotating magnet assembly and centrally fed RF power |
| US8524600B2 (en) * | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
| US9499901B2 (en) | 2012-01-27 | 2016-11-22 | Applied Materials, Inc. | High density TiN RF/DC PVD deposition with stress tuning |
| US9218980B2 (en) * | 2013-09-13 | 2015-12-22 | Applied Materials, Inc. | Surface treatment to improve CCTBA based CVD co nucleation on dielectric substrate |
| KR102403706B1 (ko) * | 2013-09-27 | 2022-05-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 심리스 코발트 갭-충전을 가능하게 하는 방법 |
| US9349637B2 (en) * | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
| US9741577B2 (en) * | 2015-12-02 | 2017-08-22 | International Business Machines Corporation | Metal reflow for middle of line contacts |
| US10128151B2 (en) * | 2016-12-16 | 2018-11-13 | Globalfoundries Inc. | Devices and methods of cobalt fill metallization |
| TWI809712B (zh) * | 2017-01-24 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在基板上形成鈷層的方法 |
-
2017
- 2017-09-21 US US15/711,169 patent/US10304732B2/en active Active
-
2018
- 2018-09-18 KR KR1020207010834A patent/KR102572732B1/ko active Active
- 2018-09-18 CN CN201880061451.2A patent/CN111133558B/zh active Active
- 2018-09-18 WO PCT/US2018/051509 patent/WO2019060296A1/en not_active Ceased
- 2018-09-18 JP JP2020516638A patent/JP7309697B2/ja active Active
- 2018-09-21 TW TW107133304A patent/TWI782094B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008141050A (ja) | 2006-12-04 | 2008-06-19 | Ulvac Japan Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
| JP2015519725A (ja) | 2012-03-28 | 2015-07-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | シームレスのコバルト間隙充填を可能にする方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111133558B (zh) | 2024-04-02 |
| KR20200045563A (ko) | 2020-05-04 |
| US20190088540A1 (en) | 2019-03-21 |
| US10304732B2 (en) | 2019-05-28 |
| JP2020534702A (ja) | 2020-11-26 |
| TW201925532A (zh) | 2019-07-01 |
| KR102572732B1 (ko) | 2023-08-29 |
| WO2019060296A1 (en) | 2019-03-28 |
| TWI782094B (zh) | 2022-11-01 |
| CN111133558A (zh) | 2020-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP7309697B2 (ja) | 基板のフィーチャをコバルトで充填する方法および装置 | |
| US6554914B1 (en) | Passivation of copper in dual damascene metalization | |
| TWI621161B (zh) | 用於內連線的釕金屬特徵部填補 | |
| US9677172B2 (en) | Methods for forming a cobalt-ruthenium liner layer for interconnect structures | |
| US10879081B2 (en) | Methods of reducing or eliminating defects in tungsten film | |
| US11315830B2 (en) | Metallic interconnect structures with wrap around capping layers | |
| US7704886B2 (en) | Multi-step Cu seed layer formation for improving sidewall coverage | |
| US10431464B2 (en) | Liner planarization-free process flow for fabricating metallic interconnect structures | |
| WO1999009593A1 (en) | Dual damascene metallization | |
| US7790617B2 (en) | Formation of metal silicide layer over copper interconnect for reliability enhancement | |
| JP2011216867A (ja) | 薄膜の形成方法 | |
| WO2006029388A2 (en) | Method and apparatus for fabricating low-k dielectrics, conducting films, and strain-controlling conformable silica-carbon materials | |
| TWI853995B (zh) | 用於混成特徵金屬化之方法與設備 | |
| KR20180034265A (ko) | 니켈 배선의 제조 방법 | |
| US10950500B2 (en) | Methods and apparatus for filling a feature disposed in a substrate | |
| US20150130064A1 (en) | Methods of manufacturing semiconductor devices and a semiconductor structure | |
| TWI609095B (zh) | 用於氮化錳整合之方法 | |
| JP2001007049A (ja) | 半導体集積回路装置の製造方法およびその製造装置 | |
| JP2018117065A (ja) | 金属膜の埋め込み方法 | |
| TW202516603A (zh) | 減式金屬及減式金屬半導體結構 | |
| US12469747B2 (en) | Selective metal selectivity improvement with RF pulsing | |
| JP2004031497A (ja) | 半導体装置およびその製造方法 | |
| TW202341354A (zh) | 使用雙官能自組裝單層的金屬表面的選擇性阻擋 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210916 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210916 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221116 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230215 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230605 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230705 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7309697 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |