CN111133558B - 用钴填充基板特征的方法与设备 - Google Patents

用钴填充基板特征的方法与设备 Download PDF

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CN111133558B
CN111133558B CN201880061451.2A CN201880061451A CN111133558B CN 111133558 B CN111133558 B CN 111133558B CN 201880061451 A CN201880061451 A CN 201880061451A CN 111133558 B CN111133558 B CN 111133558B
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cobalt
feature
substrate
layer
chamber
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CN111133558A (zh
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侯文婷
雷建新
李靖珠
陶荣
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Applied Materials Inc
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Applied Materials Inc
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemically Coating (AREA)
CN201880061451.2A 2017-09-21 2018-09-18 用钴填充基板特征的方法与设备 Active CN111133558B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/711,169 2017-09-21
US15/711,169 US10304732B2 (en) 2017-09-21 2017-09-21 Methods and apparatus for filling substrate features with cobalt
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