TWI782094B - 用鈷填充基板特徵的方法與設備 - Google Patents

用鈷填充基板特徵的方法與設備 Download PDF

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TWI782094B
TWI782094B TW107133304A TW107133304A TWI782094B TW I782094 B TWI782094 B TW I782094B TW 107133304 A TW107133304 A TW 107133304A TW 107133304 A TW107133304 A TW 107133304A TW I782094 B TWI782094 B TW I782094B
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cobalt
feature
substrate
layer
chamber
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TW107133304A
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Chinese (zh)
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TW201925532A (zh
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侯文婷
雷建新
李正周
龍 陶
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美商應用材料股份有限公司
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    • HELECTRICITY
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    • H10D64/01302Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332Making the insulator
    • H10D64/01336Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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    • H10W20/045Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemically Coating (AREA)
TW107133304A 2017-09-21 2018-09-21 用鈷填充基板特徵的方法與設備 TWI782094B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/711,169 2017-09-21
US15/711,169 US10304732B2 (en) 2017-09-21 2017-09-21 Methods and apparatus for filling substrate features with cobalt

Publications (2)

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