TWI782094B - 用鈷填充基板特徵的方法與設備 - Google Patents
用鈷填充基板特徵的方法與設備 Download PDFInfo
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- TWI782094B TWI782094B TW107133304A TW107133304A TWI782094B TW I782094 B TWI782094 B TW I782094B TW 107133304 A TW107133304 A TW 107133304A TW 107133304 A TW107133304 A TW 107133304A TW I782094 B TWI782094 B TW I782094B
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- H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
- H10D64/01332—Making the insulator
- H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
- H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/711,169 | 2017-09-21 | ||
| US15/711,169 US10304732B2 (en) | 2017-09-21 | 2017-09-21 | Methods and apparatus for filling substrate features with cobalt |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201925532A TW201925532A (zh) | 2019-07-01 |
| TWI782094B true TWI782094B (zh) | 2022-11-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107133304A TWI782094B (zh) | 2017-09-21 | 2018-09-21 | 用鈷填充基板特徵的方法與設備 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10304732B2 (https=) |
| JP (1) | JP7309697B2 (https=) |
| KR (1) | KR102572732B1 (https=) |
| CN (1) | CN111133558B (https=) |
| TW (1) | TWI782094B (https=) |
| WO (1) | WO2019060296A1 (https=) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US11410891B2 (en) | 2019-08-26 | 2022-08-09 | International Business Machines Corporation | Anomaly detection and remedial recommendation |
| US11164815B2 (en) | 2019-09-28 | 2021-11-02 | International Business Machines Corporation | Bottom barrier free interconnects without voids |
| US11776980B2 (en) * | 2020-03-13 | 2023-10-03 | Applied Materials, Inc. | Methods for reflector film growth |
| CN211879343U (zh) * | 2020-04-10 | 2020-11-06 | 北京北方华创微电子装备有限公司 | 一种半导体加工设备 |
| US11527437B2 (en) | 2020-09-15 | 2022-12-13 | Applied Materials, Inc. | Methods and apparatus for intermixing layer for enhanced metal reflow |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201409613A (zh) * | 2012-03-28 | 2014-03-01 | 應用材料股份有限公司 | 實現無縫鈷間隙塡充之方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR960015719A (ko) * | 1994-10-12 | 1996-05-22 | 이온 충돌을 이용하여 반도체 기판상에 평탄한 층을 형성하기 위한 방법 및 장치 | |
| US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
| US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
| US20030029715A1 (en) * | 2001-07-25 | 2003-02-13 | Applied Materials, Inc. | An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems |
| WO2003030224A2 (en) * | 2001-07-25 | 2003-04-10 | Applied Materials, Inc. | Barrier formation using novel sputter-deposition method |
| US20070184652A1 (en) | 2006-02-07 | 2007-08-09 | Texas Instruments, Incorporated | Method for preparing a metal feature surface prior to electroless metal deposition |
| TW200746268A (en) * | 2006-04-11 | 2007-12-16 | Applied Materials Inc | Process for forming cobalt-containing materials |
| JP2008141050A (ja) | 2006-12-04 | 2008-06-19 | Ulvac Japan Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
| US20080132050A1 (en) * | 2006-12-05 | 2008-06-05 | Lavoie Adrien R | Deposition process for graded cobalt barrier layers |
| KR20090103058A (ko) | 2008-03-27 | 2009-10-01 | 주식회사 하이닉스반도체 | 반도체 소자 및 이의 제조 방법 |
| US20090246952A1 (en) | 2008-03-28 | 2009-10-01 | Tokyo Electron Limited | Method of forming a cobalt metal nitride barrier film |
| US20090269507A1 (en) * | 2008-04-29 | 2009-10-29 | Sang-Ho Yu | Selective cobalt deposition on copper surfaces |
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| US8524600B2 (en) * | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
| US9499901B2 (en) | 2012-01-27 | 2016-11-22 | Applied Materials, Inc. | High density TiN RF/DC PVD deposition with stress tuning |
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| KR102403706B1 (ko) * | 2013-09-27 | 2022-05-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 심리스 코발트 갭-충전을 가능하게 하는 방법 |
| US9349637B2 (en) * | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
| US9741577B2 (en) * | 2015-12-02 | 2017-08-22 | International Business Machines Corporation | Metal reflow for middle of line contacts |
| US10128151B2 (en) * | 2016-12-16 | 2018-11-13 | Globalfoundries Inc. | Devices and methods of cobalt fill metallization |
| TWI809712B (zh) * | 2017-01-24 | 2023-07-21 | 美商應用材料股份有限公司 | 用於在基板上形成鈷層的方法 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201409613A (zh) * | 2012-03-28 | 2014-03-01 | 應用材料股份有限公司 | 實現無縫鈷間隙塡充之方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111133558B (zh) | 2024-04-02 |
| KR20200045563A (ko) | 2020-05-04 |
| US20190088540A1 (en) | 2019-03-21 |
| US10304732B2 (en) | 2019-05-28 |
| JP2020534702A (ja) | 2020-11-26 |
| JP7309697B2 (ja) | 2023-07-18 |
| TW201925532A (zh) | 2019-07-01 |
| KR102572732B1 (ko) | 2023-08-29 |
| WO2019060296A1 (en) | 2019-03-28 |
| CN111133558A (zh) | 2020-05-08 |
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