KR102572732B1 - 기판을 프로세싱하기 위한 방법들 및 장치 - Google Patents

기판을 프로세싱하기 위한 방법들 및 장치 Download PDF

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KR102572732B1
KR102572732B1 KR1020207010834A KR20207010834A KR102572732B1 KR 102572732 B1 KR102572732 B1 KR 102572732B1 KR 1020207010834 A KR1020207010834 A KR 1020207010834A KR 20207010834 A KR20207010834 A KR 20207010834A KR 102572732 B1 KR102572732 B1 KR 102572732B1
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cobalt
substrate
feature
processing
layer
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KR20200045563A (ko
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웬팅 호우
지안신 레이
정 주 이
룽 타오
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어플라이드 머티어리얼스, 인코포레이티드
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    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01342—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid by deposition, e.g. evaporation, ALD or laser deposition
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