JP7306234B2 - ウェーハの研磨方法及びシリコンウェーハ - Google Patents
ウェーハの研磨方法及びシリコンウェーハ Download PDFInfo
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- JP7306234B2 JP7306234B2 JP2019208657A JP2019208657A JP7306234B2 JP 7306234 B2 JP7306234 B2 JP 7306234B2 JP 2019208657 A JP2019208657 A JP 2019208657A JP 2019208657 A JP2019208657 A JP 2019208657A JP 7306234 B2 JP7306234 B2 JP 7306234B2
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- 238000005498 polishing Methods 0.000 title claims description 230
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims description 50
- 229910052710 silicon Inorganic materials 0.000 title claims description 50
- 239000010703 silicon Substances 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 25
- 238000007517 polishing process Methods 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 14
- 241001189642 Theroa Species 0.000 claims description 10
- 238000011156 evaluation Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 description 124
- 239000010410 layer Substances 0.000 description 15
- 239000002002 slurry Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000001186 cumulative effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000004745 nonwoven fabric Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 229920002635 polyurethane Polymers 0.000 description 2
- 239000004814 polyurethane Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 229920005830 Polyurethane Foam Polymers 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000011496 polyurethane foam Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
100 片面研磨装置
120 研磨ヘッド
124 リテーナリング
124A リテーナリングの下端面
140 回転定盤
150 研磨パッド
160 スラリー供給手段
170 スラリー
Claims (10)
- 研磨レートが異なる2段以上の研磨ステップによりウェーハの表面を化学的機械研磨する方法であって、取り代が0.3μm以上の研磨ステップで使用する研磨パッドの面内の厚みばらつき(標準偏差)が2.0μm以下であることを特徴とするウェーハの研磨方法。
- 前記2段以上の研磨ステップは、
前記ウェーハの表面を0.3μm以上研磨する第1研磨ステップと、
前記第1研磨ステップよりも低い研磨レートで前記ウェーハの表面を研磨する第2研磨ステップを含み、
前記第1研磨ステップで使用する研磨パッドの面内の厚みばらつき(標準偏差)が2.0μm以下である、請求項1に記載のウェーハの研磨方法。 - 前記第1研磨ステップにおける前記ウェーハの研磨レートが50nm/min以上である、請求項2に記載のウェーハの研磨方法。
- 前記第1及び第2研磨ステップにより研磨された前記ウェーハの表面の少なくとも一方向の寸法が2mm且つ面積が2mm2以上4mm2以下の領域からなるサイト内のナノトポグラフィの50%スレシホールド値が1.0nm以下である、請求項2又は3に記載のウェーハの研磨方法。
- 前記サイトのサイズが、2mmスクエアである、請求項4に記載のウェーハの研磨方法。
- 前記第1研磨ステップにおける前記研磨パッドに対する前記ウェーハの相対速度が0.3m/s以下であり、
前記第1研磨ステップで使用する前記研磨パッドの面内の厚みばらつき(標準偏差)が1.6μm以下である、請求項2乃至5のいずれか一項に記載のウェーハの研磨方法。 - 前記第1及び第2研磨ステップにより研磨された前記ウェーハの最外周から内側に1mmの領域内のROAが20nm以下である、請求項6に記載のウェーハの研磨方法。
- ウェーハの化学的機械研磨に使用する研磨パッドの面内の厚みばらつきを測定して当該厚みばらつき(標準偏差)が2.0μm以下か否かを評価する研磨パッド厚み評価ステップと、
前記研磨パッドの面内の厚みばらつき(標準偏差)が2.0μm以下でない場合に当該厚みばらつき(標準偏差)が2.0μm以下となるように前記研磨パッドの厚み分布を調整する研磨パッド厚み調整ステップとをさらに備え、
面内の厚みばらつき(標準偏差)が2.0μm以下である前記研磨パッドを用いて前記ウェーハの表面を0.3μm以上研磨する、請求項1乃至7のいずれか一項に記載のウェーハの研磨方法。 - 少なくとも一方向の寸法が2mm且つ面積が2mm2以上4mm2以下の領域からなるサイト内のナノトポグラフィの50%スレシホールド値が1.0nm以下、且つ、前記ナノトポグラフィの99.5%スレシホールド値の0.4倍以下であることを特徴とするシリコンウェーハ。
- 最外周から内側に1mmの位置におけるウェーハ外周部のROAが20nm以下である、請求項9に記載のシリコンウェーハ。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019208657A JP7306234B2 (ja) | 2019-11-19 | 2019-11-19 | ウェーハの研磨方法及びシリコンウェーハ |
TW111101085A TWI774632B (zh) | 2019-11-19 | 2020-09-03 | 晶圓的研磨方法及矽晶圓 |
TW109130195A TWI749749B (zh) | 2019-11-19 | 2020-09-03 | 晶圓的研磨方法及矽晶圓 |
CN202080080216.7A CN114667594A (zh) | 2019-11-19 | 2020-10-21 | 晶片的研磨方法及硅晶片 |
DE112020005667.8T DE112020005667T5 (de) | 2019-11-19 | 2020-10-21 | Waferpolierverfahren und Siliziumwafer |
PCT/JP2020/039527 WO2021100393A1 (ja) | 2019-11-19 | 2020-10-21 | ウェーハの研磨方法及びシリコンウェーハ |
US17/777,395 US20220415666A1 (en) | 2019-11-19 | 2020-10-21 | Wafer polishing method and silicon wafer |
KR1020227015977A KR102686298B1 (ko) | 2019-11-19 | 2020-10-21 | 웨이퍼의 연마 방법 및 실리콘 웨이퍼 |
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JP2019208657A JP7306234B2 (ja) | 2019-11-19 | 2019-11-19 | ウェーハの研磨方法及びシリコンウェーハ |
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JP2021082696A JP2021082696A (ja) | 2021-05-27 |
JP7306234B2 true JP7306234B2 (ja) | 2023-07-11 |
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US (1) | US20220415666A1 (ja) |
JP (1) | JP7306234B2 (ja) |
KR (1) | KR102686298B1 (ja) |
CN (1) | CN114667594A (ja) |
DE (1) | DE112020005667T5 (ja) |
TW (2) | TWI749749B (ja) |
WO (1) | WO2021100393A1 (ja) |
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JP2023167038A (ja) * | 2022-05-11 | 2023-11-24 | 信越半導体株式会社 | 両面研磨方法 |
Citations (6)
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JP2003257908A (ja) | 2002-02-28 | 2003-09-12 | Shin Etsu Handotai Co Ltd | ウエーハ保持盤の作製方法及びウエーハの研磨方法 |
JP2006142474A (ja) | 2004-10-20 | 2006-06-08 | Nitta Haas Inc | 研磨パッドの製造方法および研磨パッド |
JP2007266235A (ja) | 2006-03-28 | 2007-10-11 | Ebara Corp | 研磨装置 |
JP2011155265A (ja) | 2010-01-27 | 2011-08-11 | Siltronic Ag | 半導体ウェハの製造方法 |
WO2016076404A1 (ja) | 2014-11-12 | 2016-05-19 | Hoya株式会社 | 磁気ディスク用基板の製造方法及び磁気ディスクの製造方法 |
JP2017112302A (ja) | 2015-12-18 | 2017-06-22 | 株式会社Sumco | ウェーハ研磨方法および研磨装置 |
Family Cites Families (11)
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KR100842473B1 (ko) * | 2000-10-26 | 2008-07-01 | 신에츠 한도타이 가부시키가이샤 | 웨이퍼의 제조방법 및 연마장치 및 웨이퍼 |
JP3664676B2 (ja) * | 2001-10-30 | 2005-06-29 | 信越半導体株式会社 | ウェーハの研磨方法及びウェーハ研磨用研磨パッド |
JP2003229392A (ja) * | 2001-11-28 | 2003-08-15 | Shin Etsu Handotai Co Ltd | シリコンウエーハの製造方法及びシリコンウエーハ並びにsoiウエーハ |
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2019
- 2019-11-19 JP JP2019208657A patent/JP7306234B2/ja active Active
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2020
- 2020-09-03 TW TW109130195A patent/TWI749749B/zh active
- 2020-09-03 TW TW111101085A patent/TWI774632B/zh active
- 2020-10-21 CN CN202080080216.7A patent/CN114667594A/zh active Pending
- 2020-10-21 KR KR1020227015977A patent/KR102686298B1/ko active IP Right Grant
- 2020-10-21 WO PCT/JP2020/039527 patent/WO2021100393A1/ja active Application Filing
- 2020-10-21 US US17/777,395 patent/US20220415666A1/en active Pending
- 2020-10-21 DE DE112020005667.8T patent/DE112020005667T5/de active Pending
Patent Citations (6)
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JP2003257908A (ja) | 2002-02-28 | 2003-09-12 | Shin Etsu Handotai Co Ltd | ウエーハ保持盤の作製方法及びウエーハの研磨方法 |
JP2006142474A (ja) | 2004-10-20 | 2006-06-08 | Nitta Haas Inc | 研磨パッドの製造方法および研磨パッド |
JP2007266235A (ja) | 2006-03-28 | 2007-10-11 | Ebara Corp | 研磨装置 |
JP2011155265A (ja) | 2010-01-27 | 2011-08-11 | Siltronic Ag | 半導体ウェハの製造方法 |
WO2016076404A1 (ja) | 2014-11-12 | 2016-05-19 | Hoya株式会社 | 磁気ディスク用基板の製造方法及び磁気ディスクの製造方法 |
JP2017112302A (ja) | 2015-12-18 | 2017-06-22 | 株式会社Sumco | ウェーハ研磨方法および研磨装置 |
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Publication number | Publication date |
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WO2021100393A1 (ja) | 2021-05-27 |
TW202217092A (zh) | 2022-05-01 |
JP2021082696A (ja) | 2021-05-27 |
TW202120757A (zh) | 2021-06-01 |
DE112020005667T5 (de) | 2022-09-01 |
TWI749749B (zh) | 2021-12-11 |
KR102686298B1 (ko) | 2024-07-17 |
TWI774632B (zh) | 2022-08-11 |
CN114667594A (zh) | 2022-06-24 |
KR20220082036A (ko) | 2022-06-16 |
US20220415666A1 (en) | 2022-12-29 |
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