JP2017112302A - ウェーハ研磨方法および研磨装置 - Google Patents
ウェーハ研磨方法および研磨装置 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 32
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- 238000007906 compression Methods 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 description 123
- 238000007517 polishing process Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 230000007423 decrease Effects 0.000 description 10
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- 238000005530 etching Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
- B24B37/105—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
- B24B37/107—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/015—Temperature control
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/16—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】研磨パッド12が貼り付けられた回転定盤10上にスラリーを供給し且つ研磨パッド12上のウェーハを加圧ヘッド13で加圧保持しながら回転定盤10および加圧ヘッド13を回転させてウェーハの片面を研磨するウェーハ研磨方法であって、ウェーハ研磨中における研磨パッド12の表面温度Tと回転定盤10を回転駆動するモータ11aの負荷電流値FとをモニタリングしてF/T値を算出し、前記F/T値に基づいて回転定盤10の回転速度および加圧ヘッド13の研磨圧力の少なくとも一方を制御する。
【選択図】図1
Description
10 回転定盤
11 回転定盤の回転機構
11a モータ
11b 電流測定回路
12 研磨パッド
13 加圧ヘッド
14 加圧ヘッドの加圧・回転機構
15 スラリー供給機構
16 放射温度計
17 制御部
F モータの負荷電流値
T 研磨パッドの表面温度
Claims (6)
- 研磨パッドが貼り付けられた回転定盤上にスラリーを供給し且つ前記研磨パッド上のウェーハを加圧ヘッドで加圧保持しながら前記回転定盤および前記加圧ヘッドを回転させて前記ウェーハの片面を研磨するウェーハ研磨方法であって、
前記回転定盤を回転駆動するモータの負荷電流値Fと前記ウェーハ研磨中における前記研磨パッドの表面温度TとをモニタリングしてF/T値を算出し、前記F/T値に基づいて前記回転定盤の回転速度および前記加圧ヘッドの研磨圧力の少なくとも一方を制御することを特徴とするウェーハ研磨方法。 - 前記F/T値の増加に合わせて前記回転定盤の回転速度を大きくする、請求項1に記載のウェーハ研磨方法。
- 前記F/T値の増加に合わせて前記加圧ヘッドの研磨圧力を小さくする、請求項1または2に記載のウェーハ研磨方法。
- 前記加圧ヘッドの研磨圧力よりも前記回転定盤の回転速度を優先的に制御する、請求項1ないし3のいずれか一項に記載のウェーハ研磨方法。
- 前バッチのウェーハ加工工程で測定した前記F/T値に基づいて次バッチ以降のウェーハ加工工程における前記回転定盤の回転速度または前記加圧ヘッドの研磨圧力を設定する、請求項1ないし4のいずれか一項に記載のウェーハ研磨方法。
- 研磨パッドが貼り付けられた回転定盤上にスラリーを供給し且つ前記研磨パッド上のウェーハを加圧ヘッドで加圧保持しながら前記回転定盤および前記加圧ヘッドを回転させて前記ウェーハの片面を研磨するウェーハ研磨装置であって、
前記回転定盤を回転駆動するモータの負荷電流値Fを測定する電流測定回路と、
前記研磨パッドの表面温度Tを測定する温度計と、
前記負荷電流値Fおよび前記表面温度TからF/T値を算出し、前記F/T値に基づいて前記回転定盤の回転速度および前記加圧ヘッドの研磨圧力の少なくとも一方を制御する制御部とを備えることを特徴とするウェーハ研磨装置。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015247341A JP6406238B2 (ja) | 2015-12-18 | 2015-12-18 | ウェーハ研磨方法および研磨装置 |
CN201680074228.2A CN108369906B (zh) | 2015-12-18 | 2016-11-04 | 晶圆抛光方法及抛光装置 |
DE112016005815.2T DE112016005815B4 (de) | 2015-12-18 | 2016-11-04 | Waferpolierverfahren und -vorrichtung |
PCT/JP2016/082765 WO2017104285A1 (ja) | 2015-12-18 | 2016-11-04 | ウェーハ研磨方法および研磨装置 |
KR1020187016076A KR102075480B1 (ko) | 2015-12-18 | 2016-11-04 | 웨이퍼 연마 방법 및 연마 장치 |
US16/062,433 US10744616B2 (en) | 2015-12-18 | 2016-11-04 | Wafer polishing method and apparatus |
TW105136098A TWI614802B (zh) | 2015-12-18 | 2016-11-07 | 晶圓研磨方法及研磨裝置 |
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JP2015247341A JP6406238B2 (ja) | 2015-12-18 | 2015-12-18 | ウェーハ研磨方法および研磨装置 |
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JP2017112302A true JP2017112302A (ja) | 2017-06-22 |
JP6406238B2 JP6406238B2 (ja) | 2018-10-17 |
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US (1) | US10744616B2 (ja) |
JP (1) | JP6406238B2 (ja) |
KR (1) | KR102075480B1 (ja) |
CN (1) | CN108369906B (ja) |
DE (1) | DE112016005815B4 (ja) |
TW (1) | TWI614802B (ja) |
WO (1) | WO2017104285A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021082696A (ja) * | 2019-11-19 | 2021-05-27 | 株式会社Sumco | ウェーハの研磨方法及びシリコンウェーハ |
WO2023054562A1 (ja) | 2021-09-30 | 2023-04-06 | 三桜工業株式会社 | 研磨装置、研磨方法及びプログラム |
Families Citing this family (7)
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US11081359B2 (en) * | 2018-09-10 | 2021-08-03 | Globalwafers Co., Ltd. | Methods for polishing semiconductor substrates that adjust for pad-to-pad variance |
CN109904094B (zh) * | 2019-01-17 | 2021-02-19 | 安徽华顺半导体发展有限公司 | 一种多晶硅铸锭硅片清洗设备 |
JP7081544B2 (ja) * | 2019-03-22 | 2022-06-07 | 株式会社Sumco | ワークの両面研磨方法及びワークの両面研磨装置 |
JP7264039B2 (ja) * | 2019-12-19 | 2023-04-25 | 株式会社Sumco | 研磨ヘッド、化学的機械的研磨装置、および、化学的機械的研磨方法 |
CN111761419B (zh) * | 2020-06-11 | 2021-10-15 | 上海中欣晶圆半导体科技有限公司 | 用于修复晶圆边缘损伤的胶带研磨工艺 |
CN114290156B (zh) * | 2021-11-30 | 2023-05-09 | 浙江晶盛机电股份有限公司 | 硅片抛光过程中的测厚方法、系统及抛光装置 |
CN115741453B (zh) * | 2022-11-30 | 2024-02-27 | 大连理工大学 | 一种多传感器融合的智能双面研磨机 |
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US10744616B2 (en) | 2020-08-18 |
TWI614802B (zh) | 2018-02-11 |
JP6406238B2 (ja) | 2018-10-17 |
DE112016005815T5 (de) | 2018-09-06 |
CN108369906B (zh) | 2022-07-05 |
DE112016005815B4 (de) | 2023-11-30 |
US20180369985A1 (en) | 2018-12-27 |
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