TWI614802B - 晶圓研磨方法及研磨裝置 - Google Patents

晶圓研磨方法及研磨裝置 Download PDF

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TWI614802B
TWI614802B TW105136098A TW105136098A TWI614802B TW I614802 B TWI614802 B TW I614802B TW 105136098 A TW105136098 A TW 105136098A TW 105136098 A TW105136098 A TW 105136098A TW I614802 B TWI614802 B TW I614802B
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wafer
polishing
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polishing pad
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Tomonori Kawasaki
Ryoya Terakawa
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Sumco Corp
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B24B37/105Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement
    • B24B37/107Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping the workpieces or work carriers being actively moved by a drive, e.g. in a combined rotary and translatory movement in a rotary movement only, about an axis being stationary during lapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/015Temperature control
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/04Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/16Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the load
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321After treatment
    • H01L21/32115Planarisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/67005Apparatus not specifically provided for elsewhere
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    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
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Abstract

抑制晶圓外周的移除厚度形狀的波動使其不隨著 研磨墊生命期的進行而變化。
一種晶圓研磨方法,其係在貼附了研磨墊12 的旋轉定盤10上供給研磨漿,並且用加壓頭13將研磨墊12上的晶圓加壓保持同時使旋轉定盤10及加壓頭13旋轉,以對晶圓的單面進行研磨,監測晶圓研磨中的研磨墊12之表面溫度T以及旋轉驅動旋轉定盤10之馬達11a的負荷電流值F,算出F/T值,基於前記F/T值控制旋轉定盤10之旋轉速度及加壓頭13之研磨壓力當中的至少一者。

Description

晶圓研磨方法及研磨裝置
本發明係關於晶圓研磨方法及研磨裝置,尤其是關於矽晶圓的枚葉研磨程序中之研磨條件的控制方法。
矽晶圓被廣泛使用作為半導體元件的基板材料。依序執行後述程序製造矽晶圓:對於矽單結晶鑄錠(ingot)依序施以外圍研削、切片、粗磨(lapping)、蝕刻、雙面研磨、單面研磨、清洗等的程序。其中,單面研磨程序為消除晶圓表面的凹凸或高低起伏以提高平坦度的必要程序,使用CMP(Chemical Mechanical Polishing:化學機械研磨)法進行鏡面加工。
通常,在矽晶圓的單面研磨程序中使用枚葉式的晶圓研磨裝置(CMP裝置)。此晶圓研磨裝置包括貼附有研磨布的旋轉定盤、及推壓的同時保持研磨墊上的晶圓的研磨頭,一邊供給研磨漿,一邊使得旋轉定盤及研磨頭分別旋轉,藉此研磨晶圓的單面。
為了提高晶圓的加工精度,例如在專利文獻1中記載將拋光定盤的溫度控制為一定的習知技術,其用放射溫度計測定貼附在拋光定盤的上面之研磨布於加工中的溫度,將冷 卻水向水冷套供給或阻斷,以使得該溫度為一定。另外,在專利文獻2記載一種半導體晶圓的鏡面研磨裝置,其係將用非接觸方式測定定盤變位的渦電流式變位檢測器測定頭設置在較定盤的半徑方向中心更靠外周部的位置。相較於用放射溫度計測定研磨墊上之溫度或者測定已回收之研磨液溫度等所求出的溫度變化來預測定盤的形狀變化的方法,使用渦電流式變位檢測器測定頭的方法之測定結果沒有延遲,並可以精確地測定定盤的形狀變化。
另外,專利文獻3中記載:在用馬達使得具備研磨布的台旋轉以將被加工物研磨的研磨方法中,對應於研磨過程,針對各區分取得研磨中的前記馬達之轉矩電流值,並基於以各區間中的轉矩電流值為解釋變數之複回歸式決定被加工物的研磨時間。另外在專利文獻4中記載:為了要確實且迅速地進行矽基板等的被加工物之研磨加工終點檢出,基於旋轉驅動用以研磨被加工物的定盤之驅動電流的積分值,判斷加工終點。
先行技術文獻
專利文獻:
專利文獻1:日本特開平07-171759號公報
專利文獻2:日本特開平07-307317號公報
專利文獻3:日本特開2004-106123號公報
專利文獻4:日本特開平09-70753號公報
過去,在枚葉研磨程序中,從新開始使用研磨墊 到其因為耗損而被更換為止的研磨墊生命期中,用一定的研磨壓力及一定的旋轉速度進行研磨加工。但是,研磨墊的物理性質隨著研磨墊生命期的經過而變化,所以有如後的問題:即使是相同的加工條件,在研磨墊使用開始時的始盤和更換前的終盤中,晶圓外周的移除厚度形狀有所不同。
為了要從1枚晶圓製造出更多的元件,必須要盡量增加邊緣區域附近的晶片取得數。因此,必須使得位於晶圓邊緣附近且沒有製造出元件的區域(邊緣除外區域)狹小化。
因為晶圓的外周會被磨平,因此希望只有上述被磨平的區域為邊緣除外區域。但是,單面研磨程序中,因為與研磨墊的接觸而使得晶圓外周部的移除厚度較多,晶圓的邊緣附近會有非故意的厚度減少(亦即,外周疲塌(邊緣滾降)),很難將較被磨平區域還靠內側的全部區域都以所欲的平坦度予以平坦化。如上述,研磨墊生命期中的始盤和終盤中的疲塌量(邊緣滾降量)不同,因此亟需改善。
因此,本發明目的為提供一種晶圓研磨方法及研磨裝置,其能夠抑制晶圓外周的移除厚度形狀的波動使其不隨著研磨墊生命期的進行而變化。
為了解決上記課題,依據本發明的晶圓研磨方法,其係在貼附了研磨墊的旋轉定盤上供給研磨漿,並且用加壓頭將前記研磨墊上的晶圓加壓保持同時使前記旋轉定盤及前記加壓頭旋轉,以對前記晶圓的單面進行研磨,該晶圓研磨方法的特徵在於:監測旋轉驅動前記旋轉定盤之馬達的負荷電 流值F以及前記晶圓研磨中之前記研磨墊的表面溫度T,算出F/T值,基於前記F/T值控制前記旋轉定盤之旋轉速度及前記加壓頭之研磨壓力當中的至少一者。
在本發明中,負荷電流值F表示機械研磨的強度,而表面溫度T表示化學研磨的強度,F/T值為表示機械除去作用和化學除去作用的平衡的指標。依據本發明的晶圓研磨方法中,持續監測此F/T值,藉此能夠掌握晶圓的邊緣滾降量伴隨著研磨墊生命期的進行而呈現的微妙的變化,藉由將F/T值回饋到研磨條件,能夠將晶圓的邊緣滾降量控制在定值,並能夠抑制外周的移除厚度形狀的波動。
依據本發明的晶圓研磨方法以此為佳:配合前記F/T值的增加,使前記旋轉定盤的旋轉速度加快,配合前記F/T值的增加,使前記加壓頭的研磨壓力減少。如此一來,配合F/T值的增加而控制旋轉定盤的旋轉速度或者加壓頭的研磨壓力,藉此,在整個研磨墊生命期當中都能夠製造出邊緣滾降量為一定的晶圓。
依據本發明的晶圓研磨方法以此為佳:相較於前記加壓頭的研磨壓力,優先控制前記旋轉定盤的旋轉速度。藉由使加壓頭的研磨壓力增加的控制,使得研磨墊的耗損變快,由於1個研磨墊可以對應的晶圓研磨加工的次數之減少而可能會使生產性降低,但藉由盡量增加旋轉定盤的控制量,就能解決此問題。
依據本發明的晶圓研磨方法以此為佳:其依據前批次的晶圓加工程序中已測定的前記F/T值,設定次批次之後的 晶圓加工程序中的前記旋轉定盤的旋轉速度或者前記加壓頭的研磨壓力。藉此,能夠防止因為在加工途中改變條件而可能對晶圓的品質造成的不良影響,並且也不會有控制延遲的問題。
另外,依據本發明的晶圓研磨裝置,其係在貼附了研磨墊的旋轉定盤上供給研磨漿,並且用加壓頭將前記研磨墊上的晶圓加壓保持同時使前記旋轉定盤及前記加壓頭旋轉,以對前記晶圓的單面進行研磨,該晶圓研磨裝置的特徵在於包括:電流測定電路,測定旋轉驅動前記旋轉定盤之馬達的負荷電流值F;溫度計,測定前記研磨墊的表面溫度T;及控制部,由前記負荷電流值F及前記表面溫度T算出F/T值,基於前記F/T值控制前記旋轉定盤之旋轉速度及前記加壓頭之研磨壓力當中的至少一者。
依據本發明,如上所述,能夠在整個研磨墊生命期當中抑制外周的移除厚度形狀的波動,並能夠製造邊緣滾降量為一定的晶圓。
依據本發明,提供一種晶圓研磨方法及研磨裝置,其能夠抑制晶圓外周的移除厚度形狀的波動使其不隨著研磨墊生命期的進行而變化。
1‧‧‧晶圓研磨裝置
10‧‧‧旋轉定盤
11‧‧‧旋轉定盤的旋轉機構
11a‧‧‧馬達
11b‧‧‧電流測定電路
12‧‧‧研磨墊
13‧‧‧加壓頭
14‧‧‧加壓頭的加壓‧旋轉機構
15‧‧‧研磨漿供給機構
16‧‧‧放射溫度計
17‧‧‧控制部
F‧‧‧馬達的負荷電流值
T‧‧‧研磨墊的表面溫度
第1圖為表示依據本發明實施形態的晶圓研磨裝置之構成的概略側面圖。
第2圖為表示旋轉定盤的旋轉速度和F/T值之關係的圖 表。
第3圖為表示加壓頭的研磨壓力和F/T值之關係的圖表。
第4圖為表示F/T值和晶圓之邊緣滾降量的關係之圖表。
第5圖為表示依據比較例之晶圓研磨方法中,伴隨著研磨墊生命期之進行而表現之晶圓的ESFQR值及F/T值的變化之圖表。
第6圖為表示依據實施例1之晶圓研磨方法中,伴隨著研磨墊生命期之進行而表現之晶圓的ESFQR值及F/T值的變化之圖表。
第7圖為表示依據實施例2之晶圓研磨方法中,伴隨著研磨墊生命期之進行而表現之晶圓的ESFQR值及F/T值的變化之圖表。
以下,參照添付圖面詳細說明本發明之較佳實施形態。
第1圖為表示依據本發明實施形態的晶圓研磨裝置之構成的概略側面圖。
如第1圖所示,晶圓研磨裝置1包括:旋轉定盤10、旋轉定盤10的旋轉機構11、貼附在旋轉定盤10之上面的絨面型研磨墊12、配置於旋轉定盤10的上方之加壓頭13、加壓頭13的加壓‧旋轉機構14及將研磨漿供給至旋轉定盤10上的研磨漿供給機構15。另外,晶圓研磨裝置1包括:於晶圓研磨途中以非接觸方式測定研磨墊12之表面溫度T的放射溫度計16、測定將旋轉定盤10旋轉驅動的旋轉機構11內之馬達11a的負 荷電流值F的電流測定電路11b、控制各部的控制部17。
在使用晶圓研磨裝置1之晶圓研磨程序中,將含有磨粒的研磨漿供給至貼附了研磨墊12的旋轉定盤10上,並且用加壓頭13將旋轉定盤10上的晶圓加壓保持同時使旋轉定盤10旋轉,以對於與研磨墊12接觸之晶圓的單面進行研磨。此單面研磨係為相對於前段的雙面研磨之潤飾程序,因此其晶圓移除厚度(移除厚度)為數百nm~1μm,加工時間也只有很短的數分鐘左右。此係因為,研磨時間太長的話,晶圓的邊緣滾降量會增加,而且外周的移除厚度形狀會惡化。
所謂的邊緣滾降量(edge Roll-Off Amount:ROA)為,平坦度規格之適用範圍外的邊緣除外區域與較其靠內側的區域之邊界位置的晶圓表面之疲塌量。具體而言,其係定義為,將晶圓背面矯正為平面的狀態下,已修正晶圓表面的傾斜後,以最外周起算3~6mm的晶圓表面的平坦區域作為基準面,在最外周起算例如0.5mm的位置上,從上記基準面起算的形狀變位量。
在晶圓研磨中,控制部17取得放射溫度計16所測定到的研磨墊12的表面溫度T,並從電流測定電路11b取得將旋轉定盤10旋轉驅動之馬達11a的負荷電流值F,持續監測上述數值並算出F/T值。
馬達11a的負荷電流值F被定義為,用以表示摩擦的大小(亦即機械除去作用的強度)之指標,負荷電流值F越大則F/T值也越大。在旋轉定盤10的旋轉速度為一定的條件下,負荷電流值F的增加意味著對於旋轉定盤10的摩擦力的 增加。雖然磨粒造成的機械移除厚度的增加使得晶圓的邊緣滾降量減少,但晶圓全面的移除厚度有變大的傾向。
研磨墊12的表面溫度T被定義為,表示化學除去作用的強度之指標,表面溫度T越大則F/T值越小。表面溫度T的增加意味著促進研磨漿的化學反應。雖然研磨漿造成的化學移除厚度的增加使得晶圓的邊緣滾降量變大,但晶圓全面的移除厚度有變小的傾向。
第2圖為表示旋轉定盤10的旋轉速度和F/T值之關係的圖表,第3圖為表示加壓頭13的研磨壓力和F/T值之關係的圖表。
如第2圖所示,F/T值呈現隨著旋轉定盤10的旋轉速度增加而下降的傾向。因此,藉由增加旋轉定盤10的旋轉速度,能夠使F/T值變小,藉由減少旋轉速度,能夠使F/T值變大。
另外,如第3圖所示,F/T值有隨著加壓頭13的研磨壓力增加而增加的傾向。因此,藉由減少加壓頭13的研磨壓力,能夠使F/T值變小,藉由增加研磨壓力能夠使F/T值變大。
第4圖為表示F/T值和晶圓之邊緣滾降量的關係之圖表,橫軸表示F/T值,縱軸表示滾降量(相對值)。
如第4圖所示,F/T值越大,則晶圓的邊緣滾降量越小,相反地,F/T值越小,則晶圓的邊緣滾降量有越大的傾向。因此,藉由增加F/T值,能夠使晶圓的邊緣滾降量變小,藉由減少F/T值,能夠使晶圓的邊緣滾降量變大。
而且,如第2圖及第3圖所示,藉由減少旋轉速度或增加研磨壓力,能夠使F/T值變大,因此,藉由此控制能夠使晶圓的邊緣滾降量變小。另外,藉由增加旋轉速度或減少研磨壓力,能夠使F/T值變小,因此,藉由此控制能夠使晶圓的邊緣滾降量變大。
在研磨墊12的研磨墊生命期的最開始的時候,晶圓的邊緣滾降量較大,隨著研磨墊生命期的進行,晶圓的邊緣滾降量漸漸降低,另外,F/T值配合邊緣滾降量的降低,也會隨著研磨墊生命期的進行而漸漸增加。在研磨墊生命期的始盤中,為了要抑制此種F/T值的增加,在本實施形態中,加大旋轉定盤10的旋轉速度,或者減小加壓頭13的研磨壓力。然後,配合研磨墊生命期的進行,使旋轉速度漸漸減小、或者將研磨壓力漸漸增加。藉此,能夠將F/T值保持在一定,藉此能夠抑制晶圓的邊緣滾降量的變動(亦即外周的移除厚度形狀的波動)。
如上述,晶圓的邊緣滾降量的控制,可以藉由旋轉定盤10的旋轉速度來執行,也可以藉由加壓頭13的研磨壓力來執行,但是用旋轉定盤10的旋轉速度來執行較佳。此係因為,藉由加壓頭13的研磨壓力來執行控制的情況下,加大研磨壓力會加快研磨墊12的耗損(提早更換時期),用1枚研磨墊12能夠研磨的晶圓枚數減少而使得生產性降低。優先控制旋轉定盤10的旋轉速度的情況下,例如較佳是在選擇了和目標F/T值最接近的旋轉定盤10的旋轉速度後,再調整研磨壓力以修正和目標值的誤差量。藉此,能夠抑制研磨墊12的耗損,同時提高晶圓的邊緣滾降量之控制精度。
在晶圓的加工程序中,並不需要即時變更旋轉定盤10的旋轉速度或加壓頭13的研磨壓力,可以基於前批次的晶圓研磨程序中已測定到的F/T值,設定次批次或者次批次之後的晶圓研磨程序中的旋轉速度或研磨壓力,並據以進行研磨加工。此係因為,在加工途中改變條件可能會對於晶圓品質造成不良影響,另外在次批次的晶圓研磨程序時進行變更也幾乎不會有控制延遲的問題。
晶圓研磨裝置1將例如晶圓盒的最大收容枚數的晶圓一起批次處理。例如,在1個晶圓盒中可以收容25枚晶圓的情況下,晶圓研磨裝置1在相同研磨條件下連續處理25枚晶圓,在結束了25枚晶圓的研磨處理之後,再執行接下來25枚晶圓的研磨處理,並且能夠再接下來的25枚晶圓的研磨處理開始時對其設定新的研磨條件。另外,在相同研磨條件下被批次處理的晶圓之枚數為10~30枚左右為佳,但是只有1枚也可以。亦即,可以在每當結束1枚晶圓的研磨處理時,再設定研磨條件。如此一來,按照不會對晶圓品質造成不良影響的最短周期,設定配合F/T值的變化之研磨條件,藉此能夠在研磨墊生命期當中都將晶圓的邊緣滾降量維持在一定。
如以上說明,依據本實施形態的晶圓研磨方法,將旋轉驅動旋轉定盤10之馬達11a的負荷電流值F作為機械研磨強度的指標,將放射溫度計16測得的研磨墊12的表面溫度T作為化學研磨強度的指標,並且持續監測兩者,藉此,能夠將F/T值回饋於旋轉定盤10的旋轉速度或加壓頭13的研磨壓力的控制,即使在研磨墊12的物理性質值隨著研磨墊生命 期之進行而變化的情況下,也能夠抑制外周的移除厚度形狀的波動,並能夠製造出邊緣滾降量為一定的晶圓。另外,相較於配合研磨墊生命期的進行而將旋轉定盤10的旋轉速度以一定的變化率變化的被動式控制,本發明具有如後優點:能夠更正確掌握並調整研磨墊12之物理性質的個別差異或因為生命週期而產生的變動。
以上,已說明本發明的較佳實施形態,但本發明不限定於上記的實施形態,在不脫離本發明主旨的範圍內可以進行各種變更,其當然亦包含於本發明的範圍內。
對於用丘克拉斯基法所育成的直徑300mm的矽單結晶鑄錠施以外圍研削、切片、粗磨、蝕刻、及雙面研磨,得到厚度776μm的矽晶圓樣本。繼之,使用如第1圖所示之晶圓研磨裝置,實施矽晶圓樣本的單面研磨程序。在單面研磨程序中,晶圓的目標移除厚度為1μm。另外,採用絨面型的研磨墊作為研磨墊12,研磨漿則採用含有0.3wt%的粒徑35nm的膠體二氧化矽的。
之後,評價從研磨墊生命期初期到結束(交換)為止的研磨墊生命期當中被研磨加工的複數枚的矽晶圓之ESFQR(Edge Site Front least sQuares Range)的變化。ESFQR為關注平坦度容易惡化的邊緣之平坦度評價指標(站點平坦度),其表示邊緣滾降量的大小。ESFQR定義為,將沿著晶圓邊緣的環狀區域在周方向均等分割所得到的單位區域(站點)作為對象,和由站點內的厚度分布以最小平方法求出基準面(Site Best Fit Surface)的偏差之最大值和最小值的差值。在此,測定 設定為晶圓最外周起算2~32mm的範圍(片段長30mm)內的環狀外周領域在周方向分割為72分的站點的ESFQR,再求出全站點的平均值ESFQR_mean。
在比較例中,將加壓頭13的研磨壓力固定在為150g/cm2,並將旋轉定盤10的旋轉速度固定為30rpm,對多數枚晶圓進行研磨,求出這些晶圓的ESFQR_mean值。
第5圖為表示伴隨著研磨墊生命期之進行而表現之晶圓的ESFQR值及F/T值的變化之圖表,橫軸為批次處理次數,縱軸為ESFQR_mean(nm),箱線圖則為在同一批次內被處理的25枚晶圓的ESFQR_mean之波動。如第5圖所示,在研磨墊生命期的始盤中,F/T值大於目標範圍,ESFQR_mean值為大於目標值的值,ESFQR_mean值的波動也很大。
另一方面,在實施例1中,將加壓頭13的研磨壓力固定為150g/cm2,另外將旋轉定盤10的旋轉速度控制在20~60rpm的範圍內,以使得F/T值落在目標範圍內,同時對多數枚的晶圓進行研磨,求出這些晶圓的ESFQR值。其結果為,如第6圖所示,能夠在整個研磨墊生命期當中都使得ESFQR_mean值在目標範圍內,並使得F/T值穩定。
另外,在實施例2中,將旋轉定盤10的旋轉速度固定在30rpm,並將加壓頭13的研磨壓力控制在100~200g/cm2的範圍內,使得F/T值落在目標範圍內,同時對多數枚的晶圓進行研磨,求出這些晶圓的ESFQR_mean值。其結果為,如第7圖所示,能夠在整個研磨墊生命期當中都使得ESFQR_mean值在目標範圍內,並使得F/T值穩定。但是,研磨墊12的壽 命變短,處理枚數減少,因此使得生產性惡化。
10‧‧‧旋轉定盤
11‧‧‧旋轉定盤的旋轉機構
11a‧‧‧馬達
11b‧‧‧電流測定電路
12‧‧‧研磨墊
13‧‧‧加壓頭
14‧‧‧加壓頭的加壓‧旋轉機構
15‧‧‧研磨漿供給機構
16‧‧‧放射溫度計
17‧‧‧控制部

Claims (6)

  1. 一種晶圓研磨方法,其係在貼附了研磨墊的旋轉定盤上供給研磨漿,並且用加壓頭將前記研磨墊上的晶圓加壓保持同時使前記旋轉定盤及前記加壓頭旋轉,以對前記晶圓的單面進行研磨,該晶圓研磨方法的特徵在於:監測旋轉驅動前記旋轉定盤之馬達的負荷電流值F以及前記晶圓研磨中之前記研磨墊的表面溫度T,算出F/T值,基於前記F/T值控制前記旋轉定盤之旋轉速度及前記加壓頭之研磨壓力當中的至少一者。
  2. 如申請專利範圍第1項所記載的晶圓研磨方法,配合前記F/T值的增加,使前記旋轉定盤的旋轉速度加快。
  3. 如申請專利範圍第1或2項所記載的晶圓研磨方法,配合前記F/T值的增加,使前記加壓頭的研磨壓力減少。
  4. 如申請專利範圍第1或2項所記載的晶圓研磨方法,相較於前記加壓頭的研磨壓力,優先控制前記旋轉定盤的旋轉速度。
  5. 如申請專利範圍第1或2項所記載的晶圓研磨方法,其依據前批次的晶圓加工程序中已測定的前記F/T值,設定次批次之後的晶圓加工程序中的前記旋轉定盤的旋轉速度或者前記加壓頭的研磨壓力。
  6. 一種晶圓研磨裝置,其係在貼附了研磨墊的旋轉定盤上供給研磨漿,並且用加壓頭將前記研磨墊上的晶圓加壓保持同時使前記旋轉定盤及前記加壓頭旋轉,以對前記晶圓的單面進行研磨,該晶圓研磨裝置的特徵在於包括: 電流測定電路,測定旋轉驅動前記旋轉定盤之馬達的負荷電流值F;溫度計,測定前記研磨墊的表面溫度T;及控制部,由前記負荷電流值F及前記表面溫度T算出F/T值,基於前記F/T值控制前記旋轉定盤之旋轉速度及前記加壓頭之研磨壓力當中的至少一者。
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