JP7300353B2 - ダイボンディング装置および半導体装置の製造方法 - Google Patents

ダイボンディング装置および半導体装置の製造方法 Download PDF

Info

Publication number
JP7300353B2
JP7300353B2 JP2019166864A JP2019166864A JP7300353B2 JP 7300353 B2 JP7300353 B2 JP 7300353B2 JP 2019166864 A JP2019166864 A JP 2019166864A JP 2019166864 A JP2019166864 A JP 2019166864A JP 7300353 B2 JP7300353 B2 JP 7300353B2
Authority
JP
Japan
Prior art keywords
adhesive
paste
substrate
paste adhesive
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019166864A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021044466A (ja
Inventor
英晴 小橋
浩 牧
宜久 中島
晴之 高野
大輔 内藤
Original Assignee
ファスフォードテクノロジ株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ファスフォードテクノロジ株式会社 filed Critical ファスフォードテクノロジ株式会社
Priority to JP2019166864A priority Critical patent/JP7300353B2/ja
Priority to TW110134196A priority patent/TWI756160B/zh
Priority to TW109117611A priority patent/TWI750674B/zh
Priority to CN202010729770.5A priority patent/CN112509939B/zh
Priority to KR1020200097310A priority patent/KR102446631B1/ko
Publication of JP2021044466A publication Critical patent/JP2021044466A/ja
Priority to KR1020220047031A priority patent/KR102447306B1/ko
Priority to JP2023077718A priority patent/JP7458532B2/ja
Application granted granted Critical
Publication of JP7300353B2 publication Critical patent/JP7300353B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/756—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/75611—Feeding means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/759—Means for monitoring the connection process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/75981—Apparatus chuck
    • H01L2224/75982—Shape
    • H01L2224/75983—Shape of the mounting surface

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Health & Medical Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Die Bonding (AREA)
  • Image Analysis (AREA)
  • Length Measuring Devices By Optical Means (AREA)
JP2019166864A 2019-09-13 2019-09-13 ダイボンディング装置および半導体装置の製造方法 Active JP7300353B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2019166864A JP7300353B2 (ja) 2019-09-13 2019-09-13 ダイボンディング装置および半導体装置の製造方法
TW110134196A TWI756160B (zh) 2019-09-13 2020-05-27 黏晶裝置及半導體裝置的製造方法
TW109117611A TWI750674B (zh) 2019-09-13 2020-05-27 黏晶裝置及半導體裝置的製造方法
CN202010729770.5A CN112509939B (zh) 2019-09-13 2020-07-27 芯片贴装装置及半导体器件的制造方法
KR1020200097310A KR102446631B1 (ko) 2019-09-13 2020-08-04 다이 본딩 장치 및 반도체 장치의 제조 방법
KR1020220047031A KR102447306B1 (ko) 2019-09-13 2022-04-15 다이 본딩 장치 및 반도체 장치의 제조 방법
JP2023077718A JP7458532B2 (ja) 2019-09-13 2023-05-10 ダイボンディング装置および半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019166864A JP7300353B2 (ja) 2019-09-13 2019-09-13 ダイボンディング装置および半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023077718A Division JP7458532B2 (ja) 2019-09-13 2023-05-10 ダイボンディング装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2021044466A JP2021044466A (ja) 2021-03-18
JP7300353B2 true JP7300353B2 (ja) 2023-06-29

Family

ID=74862503

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2019166864A Active JP7300353B2 (ja) 2019-09-13 2019-09-13 ダイボンディング装置および半導体装置の製造方法
JP2023077718A Active JP7458532B2 (ja) 2019-09-13 2023-05-10 ダイボンディング装置および半導体装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023077718A Active JP7458532B2 (ja) 2019-09-13 2023-05-10 ダイボンディング装置および半導体装置の製造方法

Country Status (4)

Country Link
JP (2) JP7300353B2 (zh)
KR (2) KR102446631B1 (zh)
CN (1) CN112509939B (zh)
TW (2) TWI756160B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2023041413A (ja) * 2021-09-13 2023-03-24 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法
JP2023042715A (ja) 2021-09-15 2023-03-28 ファスフォードテクノロジ株式会社 ダイボンディング装置および半導体装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009078254A (ja) 2007-09-27 2009-04-16 Nec Corp 塗布剤の劣化検査装置及び劣化検査方法並びに劣化検査プログラム
JP2013021226A (ja) 2011-07-13 2013-01-31 Hitachi High-Tech Instruments Co Ltd ダイボンダ
JP2019047067A (ja) 2017-09-06 2019-03-22 ヤマハ発動機株式会社 基板作業装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2539015B2 (ja) * 1988-11-18 1996-10-02 株式会社日立製作所 ペレットボンディング方法およびその装置
JP2850816B2 (ja) * 1995-12-18 1999-01-27 日本電気株式会社 バンプ接合検査装置及び検査方法
US6597496B1 (en) * 1999-10-25 2003-07-22 The Board Of Trustees Of The University Of Illinois Silicon nanoparticle stimulated emission devices
JP3732082B2 (ja) * 2000-09-25 2006-01-05 株式会社新川 ボンディング装置およびボンディング方法
JP3736390B2 (ja) * 2001-06-25 2006-01-18 松下電器産業株式会社 塗布状態検査方法
JP3591489B2 (ja) * 2001-06-25 2004-11-17 松下電器産業株式会社 粘性材料塗布装置および粘性材料塗布方法
CN1220254C (zh) * 2001-12-07 2005-09-21 雅马哈株式会社 半导体器件的制造方法和用于制造半导体器件的设备
JP4869776B2 (ja) * 2006-04-28 2012-02-08 ヤマハ発動機株式会社 印刷検査装置及び印刷装置
JP5634021B2 (ja) * 2008-11-12 2014-12-03 株式会社東芝 半導体装置の製造装置および半導体装置の製造方法
US8129220B2 (en) * 2009-08-24 2012-03-06 Hong Kong Polytechnic University Method and system for bonding electrical devices using an electrically conductive adhesive
US9653424B2 (en) * 2009-09-21 2017-05-16 Alpha And Omega Semiconductor Incorporated Semiconductor package with adhesive material pre-printed on the lead frame and chip, and its manufacturing method
JP2011080888A (ja) * 2009-10-08 2011-04-21 Panasonic Corp 塗布状態検査方法
JP5302175B2 (ja) * 2009-12-14 2013-10-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5402774B2 (ja) * 2010-03-26 2014-01-29 パナソニック株式会社 ペースト塗布装置およびペースト塗布方法
JP5666246B2 (ja) * 2010-10-29 2015-02-12 株式会社日立ハイテクインスツルメンツ ダイボンダ装置およびダイボンダ方法
JP6022782B2 (ja) 2012-03-19 2016-11-09 ファスフォードテクノロジ株式会社 ダイボンダ
JP6152248B2 (ja) * 2012-04-19 2017-06-21 ファスフォードテクノロジ株式会社 ペースト塗布装置及びペースト塗布方法並びにダイボンダ
JP2014179560A (ja) 2013-03-15 2014-09-25 Hitachi High-Tech Instruments Co Ltd 斜め認識カメラ及びダイボンダ
JP6062545B2 (ja) * 2013-06-13 2017-01-18 日立オートモティブシステムズ株式会社 半導体装置とその製造方法、および、熱式空気流量センサとその製造方法
JP6128337B2 (ja) * 2014-10-23 2017-05-17 パナソニックＩｐマネジメント株式会社 半導体装置の製造方法及び製造装置
JP6685126B2 (ja) * 2015-12-24 2020-04-22 ファスフォードテクノロジ株式会社 半導体製造装置および半導体装置の製造方法
CN107134422A (zh) * 2016-02-29 2017-09-05 上海微电子装备（集团）股份有限公司 芯片键合装置及方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009078254A (ja) 2007-09-27 2009-04-16 Nec Corp 塗布剤の劣化検査装置及び劣化検査方法並びに劣化検査プログラム
JP2013021226A (ja) 2011-07-13 2013-01-31 Hitachi High-Tech Instruments Co Ltd ダイボンダ
JP2019047067A (ja) 2017-09-06 2019-03-22 ヤマハ発動機株式会社 基板作業装置

Also Published As

Publication number Publication date
TW202201570A (zh) 2022-01-01
KR102447306B1 (ko) 2022-09-26
JP7458532B2 (ja) 2024-03-29
KR102446631B1 (ko) 2022-09-23
TWI756160B (zh) 2022-02-21
CN112509939B (zh) 2024-03-01
JP2023099606A (ja) 2023-07-13
CN112509939A (zh) 2021-03-16
KR20220054559A (ko) 2022-05-03
TWI750674B (zh) 2021-12-21
JP2021044466A (ja) 2021-03-18
KR20210031811A (ko) 2021-03-23
TW202119506A (zh) 2021-05-16

Similar Documents

Publication Publication Date Title
CN108573901B (zh) 裸芯片接合装置及半导体器件的制造方法
JP7458532B2 (ja) ダイボンディング装置および半導体装置の製造方法
JP7161870B2 (ja) ダイボンダおよび半導体装置の製造方法
KR20170076545A (ko) 반도체 제조 장치 및 반도체 장치의 제조 방법
JP7225337B2 (ja) 半導体製造装置および半導体装置の製造方法
JP2022098312A (ja) ダイボンディング装置および半導体装置の製造方法
JP7082862B2 (ja) ダイボンディング装置、半導体装置の製造方法および半導体製造システム
TWI765517B (zh) 晶粒接合裝置及半導體裝置的製造方法
TWI786739B (zh) 晶粒接合裝置及半導體裝置之製造方法
JP7502493B1 (ja) 半導体製造装置、塗布装置および半導体装置の製造方法
JP2023100562A (ja) 半導体製造装置、検査装置および半導体装置の製造方法
CN116313891A (zh) 安装装置、照明系统的调整方法及半导体器件的制造方法
CN118553641A (zh) 半导体制造装置、边缘的检测方法及半导体器件的制造方法
JP2024129750A (ja) 半導体製造装置、検査装置および半導体装置の製造方法
CN116759329A (zh) 安装装置、检查装置及半导体器件的制造方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220525

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230328

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20230330

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230510

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230530

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230619

R150 Certificate of patent or registration of utility model

Ref document number: 7300353

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150