JP7300353B2 - ダイボンディング装置および半導体装置の製造方法 - Google Patents
ダイボンディング装置および半導体装置の製造方法 Download PDFInfo
- Publication number
- JP7300353B2 JP7300353B2 JP2019166864A JP2019166864A JP7300353B2 JP 7300353 B2 JP7300353 B2 JP 7300353B2 JP 2019166864 A JP2019166864 A JP 2019166864A JP 2019166864 A JP2019166864 A JP 2019166864A JP 7300353 B2 JP7300353 B2 JP 7300353B2
- Authority
- JP
- Japan
- Prior art keywords
- adhesive
- paste
- substrate
- paste adhesive
- imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 40
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000853 adhesive Substances 0.000 claims description 177
- 230000001070 adhesive effect Effects 0.000 claims description 177
- 238000007689 inspection Methods 0.000 claims description 108
- 239000000758 substrate Substances 0.000 claims description 63
- 238000003384 imaging method Methods 0.000 claims description 57
- 238000000034 method Methods 0.000 claims description 39
- 238000011179 visual inspection Methods 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 235000011837 pasties Nutrition 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 27
- 238000005286 illumination Methods 0.000 description 21
- 230000000740 bleeding effect Effects 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000008602 contraction Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/956—Inspecting patterns on the surface of objects
- G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4825—Connection or disconnection of other leads to or from flat leads, e.g. wires, bumps, other flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/756—Means for supplying the connector to be connected in the bonding apparatus
- H01L2224/75611—Feeding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/75981—Apparatus chuck
- H01L2224/75982—Shape
- H01L2224/75983—Shape of the mounting surface
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Automation & Control Theory (AREA)
- Die Bonding (AREA)
- Image Analysis (AREA)
- Length Measuring Devices By Optical Means (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019166864A JP7300353B2 (ja) | 2019-09-13 | 2019-09-13 | ダイボンディング装置および半導体装置の製造方法 |
TW110134196A TWI756160B (zh) | 2019-09-13 | 2020-05-27 | 黏晶裝置及半導體裝置的製造方法 |
TW109117611A TWI750674B (zh) | 2019-09-13 | 2020-05-27 | 黏晶裝置及半導體裝置的製造方法 |
CN202010729770.5A CN112509939B (zh) | 2019-09-13 | 2020-07-27 | 芯片贴装装置及半导体器件的制造方法 |
KR1020200097310A KR102446631B1 (ko) | 2019-09-13 | 2020-08-04 | 다이 본딩 장치 및 반도체 장치의 제조 방법 |
KR1020220047031A KR102447306B1 (ko) | 2019-09-13 | 2022-04-15 | 다이 본딩 장치 및 반도체 장치의 제조 방법 |
JP2023077718A JP7458532B2 (ja) | 2019-09-13 | 2023-05-10 | ダイボンディング装置および半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019166864A JP7300353B2 (ja) | 2019-09-13 | 2019-09-13 | ダイボンディング装置および半導体装置の製造方法 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023077718A Division JP7458532B2 (ja) | 2019-09-13 | 2023-05-10 | ダイボンディング装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021044466A JP2021044466A (ja) | 2021-03-18 |
JP7300353B2 true JP7300353B2 (ja) | 2023-06-29 |
Family
ID=74862503
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019166864A Active JP7300353B2 (ja) | 2019-09-13 | 2019-09-13 | ダイボンディング装置および半導体装置の製造方法 |
JP2023077718A Active JP7458532B2 (ja) | 2019-09-13 | 2023-05-10 | ダイボンディング装置および半導体装置の製造方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023077718A Active JP7458532B2 (ja) | 2019-09-13 | 2023-05-10 | ダイボンディング装置および半導体装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (2) | JP7300353B2 (ko) |
KR (2) | KR102446631B1 (ko) |
CN (1) | CN112509939B (ko) |
TW (2) | TWI756160B (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023041413A (ja) * | 2021-09-13 | 2023-03-24 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
JP2023042715A (ja) | 2021-09-15 | 2023-03-28 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009078254A (ja) | 2007-09-27 | 2009-04-16 | Nec Corp | 塗布剤の劣化検査装置及び劣化検査方法並びに劣化検査プログラム |
JP2013021226A (ja) | 2011-07-13 | 2013-01-31 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ |
JP2019047067A (ja) | 2017-09-06 | 2019-03-22 | ヤマハ発動機株式会社 | 基板作業装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2539015B2 (ja) * | 1988-11-18 | 1996-10-02 | 株式会社日立製作所 | ペレットボンディング方法およびその装置 |
JP2850816B2 (ja) * | 1995-12-18 | 1999-01-27 | 日本電気株式会社 | バンプ接合検査装置及び検査方法 |
US6597496B1 (en) * | 1999-10-25 | 2003-07-22 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle stimulated emission devices |
JP3732082B2 (ja) * | 2000-09-25 | 2006-01-05 | 株式会社新川 | ボンディング装置およびボンディング方法 |
JP3736390B2 (ja) * | 2001-06-25 | 2006-01-18 | 松下電器産業株式会社 | 塗布状態検査方法 |
JP3591489B2 (ja) | 2001-06-25 | 2004-11-17 | 松下電器産業株式会社 | 粘性材料塗布装置および粘性材料塗布方法 |
CN1220254C (zh) * | 2001-12-07 | 2005-09-21 | 雅马哈株式会社 | 半导体器件的制造方法和用于制造半导体器件的设备 |
JP4869776B2 (ja) * | 2006-04-28 | 2012-02-08 | ヤマハ発動機株式会社 | 印刷検査装置及び印刷装置 |
JP5634021B2 (ja) * | 2008-11-12 | 2014-12-03 | 株式会社東芝 | 半導体装置の製造装置および半導体装置の製造方法 |
US8129220B2 (en) * | 2009-08-24 | 2012-03-06 | Hong Kong Polytechnic University | Method and system for bonding electrical devices using an electrically conductive adhesive |
US9653424B2 (en) * | 2009-09-21 | 2017-05-16 | Alpha And Omega Semiconductor Incorporated | Semiconductor package with adhesive material pre-printed on the lead frame and chip, and its manufacturing method |
JP2011080888A (ja) | 2009-10-08 | 2011-04-21 | Panasonic Corp | 塗布状態検査方法 |
JP5302175B2 (ja) * | 2009-12-14 | 2013-10-02 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
JP5402774B2 (ja) | 2010-03-26 | 2014-01-29 | パナソニック株式会社 | ペースト塗布装置およびペースト塗布方法 |
JP5666246B2 (ja) * | 2010-10-29 | 2015-02-12 | 株式会社日立ハイテクインスツルメンツ | ダイボンダ装置およびダイボンダ方法 |
JP6022782B2 (ja) | 2012-03-19 | 2016-11-09 | ファスフォードテクノロジ株式会社 | ダイボンダ |
JP6152248B2 (ja) * | 2012-04-19 | 2017-06-21 | ファスフォードテクノロジ株式会社 | ペースト塗布装置及びペースト塗布方法並びにダイボンダ |
JP2014179560A (ja) | 2013-03-15 | 2014-09-25 | Hitachi High-Tech Instruments Co Ltd | 斜め認識カメラ及びダイボンダ |
JP6062545B2 (ja) * | 2013-06-13 | 2017-01-18 | 日立オートモティブシステムズ株式会社 | 半導体装置とその製造方法、および、熱式空気流量センサとその製造方法 |
JP6128337B2 (ja) * | 2014-10-23 | 2017-05-17 | パナソニックIpマネジメント株式会社 | 半導体装置の製造方法及び製造装置 |
JP6685126B2 (ja) * | 2015-12-24 | 2020-04-22 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
CN107134422A (zh) * | 2016-02-29 | 2017-09-05 | 上海微电子装备(集团)股份有限公司 | 芯片键合装置及方法 |
-
2019
- 2019-09-13 JP JP2019166864A patent/JP7300353B2/ja active Active
-
2020
- 2020-05-27 TW TW110134196A patent/TWI756160B/zh active
- 2020-05-27 TW TW109117611A patent/TWI750674B/zh active
- 2020-07-27 CN CN202010729770.5A patent/CN112509939B/zh active Active
- 2020-08-04 KR KR1020200097310A patent/KR102446631B1/ko active IP Right Grant
-
2022
- 2022-04-15 KR KR1020220047031A patent/KR102447306B1/ko active IP Right Grant
-
2023
- 2023-05-10 JP JP2023077718A patent/JP7458532B2/ja active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009078254A (ja) | 2007-09-27 | 2009-04-16 | Nec Corp | 塗布剤の劣化検査装置及び劣化検査方法並びに劣化検査プログラム |
JP2013021226A (ja) | 2011-07-13 | 2013-01-31 | Hitachi High-Tech Instruments Co Ltd | ダイボンダ |
JP2019047067A (ja) | 2017-09-06 | 2019-03-22 | ヤマハ発動機株式会社 | 基板作業装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2021044466A (ja) | 2021-03-18 |
JP2023099606A (ja) | 2023-07-13 |
TW202119506A (zh) | 2021-05-16 |
JP7458532B2 (ja) | 2024-03-29 |
KR20210031811A (ko) | 2021-03-23 |
KR102446631B1 (ko) | 2022-09-23 |
TWI750674B (zh) | 2021-12-21 |
CN112509939B (zh) | 2024-03-01 |
TW202201570A (zh) | 2022-01-01 |
TWI756160B (zh) | 2022-02-21 |
CN112509939A (zh) | 2021-03-16 |
KR20220054559A (ko) | 2022-05-03 |
KR102447306B1 (ko) | 2022-09-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108573901B (zh) | 裸芯片接合装置及半导体器件的制造方法 | |
JP7458532B2 (ja) | ダイボンディング装置および半導体装置の製造方法 | |
JP7161870B2 (ja) | ダイボンダおよび半導体装置の製造方法 | |
JP7225337B2 (ja) | 半導体製造装置および半導体装置の製造方法 | |
JP7029900B2 (ja) | ダイボンディング装置および半導体装置の製造方法 | |
JP2022098312A (ja) | ダイボンディング装置および半導体装置の製造方法 | |
JP7082862B2 (ja) | ダイボンディング装置、半導体装置の製造方法および半導体製造システム | |
TWI765517B (zh) | 晶粒接合裝置及半導體裝置的製造方法 | |
TWI786739B (zh) | 晶粒接合裝置及半導體裝置之製造方法 | |
JP7502493B1 (ja) | 半導体製造装置、塗布装置および半導体装置の製造方法 | |
JP2023100562A (ja) | 半導体製造装置、検査装置および半導体装置の製造方法 | |
CN116313891A (zh) | 安装装置、照明系统的调整方法及半导体器件的制造方法 | |
CN118553641A (zh) | 半导体制造装置、边缘的检测方法及半导体器件的制造方法 | |
TW202437455A (zh) | 半導體製造裝置,邊緣的檢測方法及半導體裝置的製造方法 | |
TW202305959A (zh) | 黏晶裝置及半導體裝置的製造方法 | |
CN116759329A (zh) | 安装装置、检查装置及半导体器件的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20220525 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20230328 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230330 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230510 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230530 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230619 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7300353 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |