JP7278965B2 - 静電気保護回路及びその製造方法、アレイ基板、表示装置 - Google Patents

静電気保護回路及びその製造方法、アレイ基板、表示装置 Download PDF

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JP7278965B2
JP7278965B2 JP2019563387A JP2019563387A JP7278965B2 JP 7278965 B2 JP7278965 B2 JP 7278965B2 JP 2019563387 A JP2019563387 A JP 2019563387A JP 2019563387 A JP2019563387 A JP 2019563387A JP 7278965 B2 JP7278965 B2 JP 7278965B2
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transistor
signal line
pole
array substrate
protection circuit
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JP2021500736A (ja
JP2021500736A5 (ja
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春平 ▲龍▼
勇 ▲喬▼
新▲銀▼ ▲呉▼
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BOE Technology Group Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/813—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements specially adapted to provide an electrical current path other than the field-effect induced current path
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Liquid Crystal (AREA)
JP2019563387A 2017-10-23 2018-08-02 静電気保護回路及びその製造方法、アレイ基板、表示装置 Active JP7278965B2 (ja)

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JP2023077361A JP7553649B2 (ja) 2017-10-23 2023-05-09 静電気保護回路、アレイ基板、及び表示装置

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CN201710994724.6A CN109698192B (zh) 2017-10-23 2017-10-23 静电保护电路、阵列基板及显示装置
CN201710994724.6 2017-10-23
PCT/CN2018/098275 WO2019080577A1 (zh) 2017-10-23 2018-08-02 静电保护电路、阵列基板及显示装置

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US (3) US11495594B2 (https=)
EP (1) EP3703125B1 (https=)
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CN109698192B (zh) * 2017-10-23 2021-01-22 京东方科技集团股份有限公司 静电保护电路、阵列基板及显示装置
US11232755B2 (en) * 2019-10-23 2022-01-25 Chengdu Boe Optoelectronics Technology Co., Ltd. Display substrate and manufacturing method therefor, and display device
CN115241254B (zh) * 2020-07-28 2025-09-23 武汉天马微电子有限公司 一种显示面板及显示装置
KR102840163B1 (ko) * 2020-08-25 2025-07-29 엘지디스플레이 주식회사 디스플레이 장치
WO2023127165A1 (ja) * 2021-12-29 2023-07-06 シャープディスプレイテクノロジー株式会社 表示装置
TWI820876B (zh) * 2022-08-23 2023-11-01 友達光電股份有限公司 顯示裝置及檢測其之檢測方法
CN115951512B (zh) * 2022-12-28 2025-07-15 广州华星光电半导体显示技术有限公司 显示面板
CN117479707A (zh) * 2023-11-07 2024-01-30 武汉华星光电半导体显示技术有限公司 一种显示面板

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US20100065887A1 (en) 2008-09-15 2010-03-18 Andreas Goebel Field effect transistor source or drain with a multi-facet surface
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US20130207115A1 (en) 2010-09-21 2013-08-15 Sharp Kabushiki Kaisha Semiconductor device and process for production thereof
WO2014054483A1 (ja) 2012-10-02 2014-04-10 シャープ株式会社 半導体装置及び表示装置
JP2015046561A (ja) 2012-11-28 2015-03-12 株式会社半導体エネルギー研究所 表示装置
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JP2005203351A (ja) 2003-12-17 2005-07-28 Semiconductor Energy Lab Co Ltd 表示装置及びその作製方法
US20100065887A1 (en) 2008-09-15 2010-03-18 Andreas Goebel Field effect transistor source or drain with a multi-facet surface
US20130207115A1 (en) 2010-09-21 2013-08-15 Sharp Kabushiki Kaisha Semiconductor device and process for production thereof
JP2013251284A (ja) 2010-09-21 2013-12-12 Sharp Corp 半導体装置およびその製造方法
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Publication number Publication date
JP7553649B2 (ja) 2024-09-18
JP2023103336A (ja) 2023-07-26
JP2021500736A (ja) 2021-01-07
CN109698192B (zh) 2021-01-22
US12100703B2 (en) 2024-09-24
EP3703125A1 (en) 2020-09-02
US20210398970A1 (en) 2021-12-23
CN109698192A (zh) 2019-04-30
US11495594B2 (en) 2022-11-08
EP3703125B1 (en) 2023-11-22
WO2019080577A1 (zh) 2019-05-02
US20240379655A1 (en) 2024-11-14
US20240072039A1 (en) 2024-02-29
EP3703125A4 (en) 2021-07-28

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