JP7274496B2 - ネガ作動型超厚膜フォトレジスト - Google Patents

ネガ作動型超厚膜フォトレジスト Download PDF

Info

Publication number
JP7274496B2
JP7274496B2 JP2020550871A JP2020550871A JP7274496B2 JP 7274496 B2 JP7274496 B2 JP 7274496B2 JP 2020550871 A JP2020550871 A JP 2020550871A JP 2020550871 A JP2020550871 A JP 2020550871A JP 7274496 B2 JP7274496 B2 JP 7274496B2
Authority
JP
Japan
Prior art keywords
component
mol
composition according
crosslinker
ranges
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020550871A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021518584A (ja
JP2021518584A5 (https=
JPWO2019180058A5 (https=
Inventor
有高 菱田
央志 本林
ルー・レイ
チェン・チュンウェイ
ルー・ピンフン
リュウ・ウェイホン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Patent GmbH
Original Assignee
Merck Patent GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck Patent GmbH filed Critical Merck Patent GmbH
Publication of JP2021518584A publication Critical patent/JP2021518584A/ja
Publication of JP2021518584A5 publication Critical patent/JP2021518584A5/ja
Publication of JPWO2019180058A5 publication Critical patent/JPWO2019180058A5/ja
Application granted granted Critical
Publication of JP7274496B2 publication Critical patent/JP7274496B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/04—Acyclic compounds
    • C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
    • C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
    • C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
    • C08F220/301—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one oxygen in the alcohol moiety
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Polymerisation Methods In General (AREA)
  • Materials For Photolithography (AREA)
  • Graft Or Block Polymers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Optical Filters (AREA)
JP2020550871A 2018-03-23 2019-03-20 ネガ作動型超厚膜フォトレジスト Active JP7274496B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862646946P 2018-03-23 2018-03-23
US62/646,946 2018-03-23
PCT/EP2019/056911 WO2019180058A1 (en) 2018-03-23 2019-03-20 Negative-working ultra thick film photoresist

Publications (4)

Publication Number Publication Date
JP2021518584A JP2021518584A (ja) 2021-08-02
JP2021518584A5 JP2021518584A5 (https=) 2022-03-14
JPWO2019180058A5 JPWO2019180058A5 (https=) 2022-03-14
JP7274496B2 true JP7274496B2 (ja) 2023-05-16

Family

ID=65904411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020550871A Active JP7274496B2 (ja) 2018-03-23 2019-03-20 ネガ作動型超厚膜フォトレジスト

Country Status (9)

Country Link
US (1) US11698586B2 (https=)
EP (1) EP3769156B1 (https=)
JP (1) JP7274496B2 (https=)
KR (1) KR102660770B1 (https=)
CN (1) CN111837075B (https=)
PT (1) PT3769156T (https=)
SG (1) SG11202007193SA (https=)
TW (1) TWI818965B (https=)
WO (1) WO2019180058A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019180058A1 (en) 2018-03-23 2019-09-26 Merck Patent Gmbh Negative-working ultra thick film photoresist
TW202336531A (zh) 2021-11-17 2023-09-16 德商馬克專利公司 藉濕式化學蝕刻以改善金屬結構製造的組合物和方法
WO2025140918A2 (en) * 2023-12-28 2025-07-03 Merck Patent Gmbh Resist composition and method for producing resist film using the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008309878A (ja) 2007-06-12 2008-12-25 Fujifilm Corp パターン形成方法
JP2009003366A (ja) 2007-06-25 2009-01-08 Jsr Corp マイクロレンズ形成に用いられる感放射線性樹脂組成物
JP2013097260A (ja) 2011-11-02 2013-05-20 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP2015521752A (ja) 2012-06-15 2015-07-30 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ネガ型厚膜フォトレジスト
US20160139507A1 (en) 2014-11-17 2016-05-19 Samsung Sdi Co., Ltd. Photosensitive Resin Composition, Photosensitive Resin Film Using the Same and Color Filter
JP2018151489A (ja) 2017-03-10 2018-09-27 東京応化工業株式会社 感光性組成物、ドライフィルム、及びパターン化された硬化膜を形成する方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH064689B2 (ja) 1983-11-01 1994-01-19 日立化成工業株式会社 重合体
DE3484047D1 (de) * 1983-10-24 1991-03-07 Hitachi Chemical Co Ltd Optische elemente enthaltend polymere von (meth)acrylat-estern.
JPH0615579B2 (ja) 1984-09-20 1994-03-02 日立化成工業株式会社 重合体からなる光学機器
JPS6090204A (ja) 1983-10-24 1985-05-21 Hitachi Chem Co Ltd 重合体の製造法
EP0264908B1 (en) 1986-10-23 1996-03-20 International Business Machines Corporation High sensitivity resists having autodecomposition temperatures greater than about 160 C
DE68928823T2 (de) 1988-07-07 1999-02-25 Sumitomo Chemical Co., Ltd., Osaka Strahlungsempfindliche, positiv arbeitende Resistzusammensetzung
US5456995A (en) * 1988-07-07 1995-10-10 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
JP2719799B2 (ja) * 1988-10-14 1998-02-25 日本合成化学工業株式会社 感光性樹脂組成物
JP2711590B2 (ja) * 1990-09-13 1998-02-10 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
KR100256392B1 (ko) 1996-09-30 2000-05-15 겐지 아이다 칼라필터용 감광성 수지 착색 조성물 및 이로부터 형성된 칼라필터 및 그 제조방법
US6296984B1 (en) 1999-03-12 2001-10-02 Agere Systems Guardian Corp. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP4384570B2 (ja) 2003-12-01 2009-12-16 東京応化工業株式会社 厚膜用ホトレジスト組成物及びレジストパターンの形成方法
JP4376706B2 (ja) * 2004-06-30 2009-12-02 東京応化工業株式会社 ネガ型ホトレジスト組成物を用いたメッキ形成物の形成方法
US8617794B2 (en) * 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
KR101430533B1 (ko) 2008-01-04 2014-08-22 솔브레인 주식회사 네거티브 포토레지스트 조성물 및 이를 이용한 어레이기판의 제조 방법
JP4964862B2 (ja) 2008-12-18 2012-07-04 凸版印刷株式会社 感光性樹脂組成物及びこの感光性樹脂組成物を用いたカラーフィルタ
JP2010286796A (ja) 2009-06-15 2010-12-24 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP5765235B2 (ja) * 2010-09-02 2015-08-19 東レ株式会社 感光性組成物、それから形成された硬化膜および硬化膜を有する素子
US9237821B2 (en) 2012-05-15 2016-01-19 Geigtech East Bay Llc Assembly for mounting shades
JP6013150B2 (ja) * 2012-11-22 2016-10-25 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 ポジ型感光性シロキサン組成物の製造方法
KR20150118582A (ko) 2013-02-12 2015-10-22 도레이 카부시키가이샤 감광성 수지 조성물, 그것을 열경화시켜서 이루어지는 보호막 또는 절연막, 그것을 사용한 터치 패널 및 그 제조 방법
KR102082722B1 (ko) 2013-07-25 2020-02-28 도레이 카부시키가이샤 터치 패널용 네거티브형 감광성 백색 조성물, 터치 패널 및 터치 패널의 제조 방법
TWI483075B (zh) 2013-08-08 2015-05-01 Chi Mei Corp 負型感光性樹脂組成物及其應用
WO2015060240A1 (ja) * 2013-10-21 2015-04-30 日産化学工業株式会社 ネガ型感光性樹脂組成物
KR20150112560A (ko) 2014-03-28 2015-10-07 동우 화인켐 주식회사 패시베이션층의 표면개질용 수지 조성물 및 그를 사용하여 제조된 이미지센서
JP2015193758A (ja) 2014-03-31 2015-11-05 東洋インキＳｃホールディングス株式会社 オーバーコート用感光性樹脂組成物、ならびにそれを用いた塗膜
US10197915B2 (en) 2014-11-27 2019-02-05 Toray Industries, Inc. Resin and photosensitive resin composition
JP6518436B2 (ja) 2014-12-19 2019-05-22 東友ファインケム株式会社Ｄｏｎｇｗｏｏ Ｆｉｎｅ−Ｃｈｅｍ Ｃｏ．， Ｌｔｄ． 着色硬化性樹脂組成物
KR20160091646A (ko) 2015-01-26 2016-08-03 동우 화인켐 주식회사 감광성 수지 조성물, 이로부터 형성된 광경화 패턴 및 이를 포함하는 화상 표시 장치
KR20160118865A (ko) 2015-04-03 2016-10-12 삼성에스디아이 주식회사 감광성 수지 조성물 및 이를 이용한 컬러필터
US20180259850A1 (en) * 2017-03-10 2018-09-13 Tokyo Ohka Kogyo Co., Ltd. Method for forming patterned cured film, photosensitive composition, dry film, and method for producing plated shaped article
WO2019180058A1 (en) 2018-03-23 2019-09-26 Merck Patent Gmbh Negative-working ultra thick film photoresist

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008309878A (ja) 2007-06-12 2008-12-25 Fujifilm Corp パターン形成方法
JP2009003366A (ja) 2007-06-25 2009-01-08 Jsr Corp マイクロレンズ形成に用いられる感放射線性樹脂組成物
JP2013097260A (ja) 2011-11-02 2013-05-20 Asahi Kasei E-Materials Corp 感光性樹脂組成物
JP2015521752A (ja) 2012-06-15 2015-07-30 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ネガ型厚膜フォトレジスト
US20160139507A1 (en) 2014-11-17 2016-05-19 Samsung Sdi Co., Ltd. Photosensitive Resin Composition, Photosensitive Resin Film Using the Same and Color Filter
JP2018151489A (ja) 2017-03-10 2018-09-27 東京応化工業株式会社 感光性組成物、ドライフィルム、及びパターン化された硬化膜を形成する方法

Also Published As

Publication number Publication date
US11698586B2 (en) 2023-07-11
TWI818965B (zh) 2023-10-21
EP3769156A1 (en) 2021-01-27
JP2021518584A (ja) 2021-08-02
WO2019180058A1 (en) 2019-09-26
KR102660770B1 (ko) 2024-04-24
US20200393758A1 (en) 2020-12-17
SG11202007193SA (en) 2020-08-28
EP3769156B1 (en) 2024-03-20
PT3769156T (pt) 2024-06-25
CN111837075B (zh) 2024-07-05
KR20200136009A (ko) 2020-12-04
CN111837075A (zh) 2020-10-27
TW201940978A (zh) 2019-10-16

Similar Documents

Publication Publication Date Title
EP2016464B1 (en) Negative photoresist compositions
EP2861638B1 (en) Negative-working thick film photoresist
JP4840255B2 (ja) パターン形成方法及びそれに用いる樹脂組成物
JP7274496B2 (ja) ネガ作動型超厚膜フォトレジスト
DE10222387A1 (de) Negative Photoresistzusammensetzungen, Photoresistfilme und deren Verwendung
JP7189217B2 (ja) アルカリ可溶性樹脂および架橋剤を含んでなるネガ型リフトオフレジスト組成物、並びに基板上に金属膜パターンを製造する方法
JP7195318B2 (ja) 感光性シロキサン組成物およびこれを用いたパターン形成方法
CN111433257A (zh) 聚硅氧烷、包含其的组合物以及使用了其的固化膜
EP3511774B1 (en) Negative-working photoresist composition for laser ablation and process using it
TWI509360B (zh) 正型光阻組成物及圖案形成方法
TWI835932B (zh) 含有丙烯酸聚合化聚矽氧烷而成之組成物、及使用其之硬化膜與其製造方法
KR20220034813A (ko) 포토레지스트 리무버 조성물
KR20180104736A (ko) 표면 처리 조성물 및 이를 사용하는 레지스트 패턴의 표면 처리 방법
JP2022519168A (ja) ポジ型レジスト組成物およびそれを用いたレジストパターンの製造方法
TW201426197A (zh) 光阻底層組成物及使用該光阻底層組成物形成圖案的方法
TW202234165A (zh) 負型感光性組成物
CN117980414A (zh) 聚硅氧烷组合物
TW201329114A (zh) 結合有熱酸產生劑之單體、由該結合有熱酸產生劑之單體獲得的聚合物、包含有該聚合物的光阻底層組成物、以及使用該光阻底層組成物形成圖案的方法
TW202200650A (zh) 包含反射率調整劑而成之負型感光性組成物
KR20110046275A (ko) 포토레지스트 패턴 세정 및 보호막 형성용 조성물
KR20130046354A (ko) 열산발생제 결합 모노머, 상기 열산발생제 결합 모노머로부터 얻어진 중합체, 상기 중합체를 포함하는　레지스트 하층막용　조성물 및 상기 레지스트 하층막용　조성물을 사용한 패턴 형성 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220304

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220304

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20221221

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230104

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230328

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230419

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230501

R150 Certificate of patent or registration of utility model

Ref document number: 7274496

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150