PT3769156T - Fotorresistente de película ultraespessa de trabalho negativo - Google Patents
Fotorresistente de película ultraespessa de trabalho negativoInfo
- Publication number
- PT3769156T PT3769156T PT197129661T PT19712966T PT3769156T PT 3769156 T PT3769156 T PT 3769156T PT 197129661 T PT197129661 T PT 197129661T PT 19712966 T PT19712966 T PT 19712966T PT 3769156 T PT3769156 T PT 3769156T
- Authority
- PT
- Portugal
- Prior art keywords
- negative
- thick film
- film photoresist
- ultra thick
- working
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0384—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the main chain of the photopolymer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/04—Acyclic compounds
- C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/281—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing only one oxygen, e.g. furfuryl (meth)acrylate or 2-methoxyethyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/28—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety
- C08F220/282—Esters containing oxygen in addition to the carboxy oxygen containing no aromatic rings in the alcohol moiety and containing two or more oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/30—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety
- C08F220/301—Esters containing oxygen in addition to the carboxy oxygen containing aromatic rings in the alcohol moiety and one oxygen in the alcohol moiety
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Inorganic Chemistry (AREA)
- Polymerisation Methods In General (AREA)
- Materials For Photolithography (AREA)
- Graft Or Block Polymers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Optical Filters (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862646946P | 2018-03-23 | 2018-03-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PT3769156T true PT3769156T (pt) | 2024-06-25 |
Family
ID=65904411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PT197129661T PT3769156T (pt) | 2018-03-23 | 2019-03-20 | Fotorresistente de película ultraespessa de trabalho negativo |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US11698586B2 (https=) |
| EP (1) | EP3769156B1 (https=) |
| JP (1) | JP7274496B2 (https=) |
| KR (1) | KR102660770B1 (https=) |
| CN (1) | CN111837075B (https=) |
| PT (1) | PT3769156T (https=) |
| SG (1) | SG11202007193SA (https=) |
| TW (1) | TWI818965B (https=) |
| WO (1) | WO2019180058A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019180058A1 (en) | 2018-03-23 | 2019-09-26 | Merck Patent Gmbh | Negative-working ultra thick film photoresist |
| TW202336531A (zh) | 2021-11-17 | 2023-09-16 | 德商馬克專利公司 | 藉濕式化學蝕刻以改善金屬結構製造的組合物和方法 |
| WO2025140918A2 (en) * | 2023-12-28 | 2025-07-03 | Merck Patent Gmbh | Resist composition and method for producing resist film using the same |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH064689B2 (ja) | 1983-11-01 | 1994-01-19 | 日立化成工業株式会社 | 重合体 |
| DE3484047D1 (de) * | 1983-10-24 | 1991-03-07 | Hitachi Chemical Co Ltd | Optische elemente enthaltend polymere von (meth)acrylat-estern. |
| JPH0615579B2 (ja) | 1984-09-20 | 1994-03-02 | 日立化成工業株式会社 | 重合体からなる光学機器 |
| JPS6090204A (ja) | 1983-10-24 | 1985-05-21 | Hitachi Chem Co Ltd | 重合体の製造法 |
| EP0264908B1 (en) | 1986-10-23 | 1996-03-20 | International Business Machines Corporation | High sensitivity resists having autodecomposition temperatures greater than about 160 C |
| DE68928823T2 (de) | 1988-07-07 | 1999-02-25 | Sumitomo Chemical Co., Ltd., Osaka | Strahlungsempfindliche, positiv arbeitende Resistzusammensetzung |
| US5456995A (en) * | 1988-07-07 | 1995-10-10 | Sumitomo Chemical Company, Limited | Radiation-sensitive positive resist composition |
| JP2719799B2 (ja) * | 1988-10-14 | 1998-02-25 | 日本合成化学工業株式会社 | 感光性樹脂組成物 |
| JP2711590B2 (ja) * | 1990-09-13 | 1998-02-10 | 富士写真フイルム株式会社 | ポジ型フオトレジスト組成物 |
| KR100256392B1 (ko) | 1996-09-30 | 2000-05-15 | 겐지 아이다 | 칼라필터용 감광성 수지 착색 조성물 및 이로부터 형성된 칼라필터 및 그 제조방법 |
| US6296984B1 (en) | 1999-03-12 | 2001-10-02 | Agere Systems Guardian Corp. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| JP4384570B2 (ja) | 2003-12-01 | 2009-12-16 | 東京応化工業株式会社 | 厚膜用ホトレジスト組成物及びレジストパターンの形成方法 |
| JP4376706B2 (ja) * | 2004-06-30 | 2009-12-02 | 東京応化工業株式会社 | ネガ型ホトレジスト組成物を用いたメッキ形成物の形成方法 |
| US8617794B2 (en) * | 2007-06-12 | 2013-12-31 | Fujifilm Corporation | Method of forming patterns |
| JP4590431B2 (ja) * | 2007-06-12 | 2010-12-01 | 富士フイルム株式会社 | パターン形成方法 |
| JP2009003366A (ja) | 2007-06-25 | 2009-01-08 | Jsr Corp | マイクロレンズ形成に用いられる感放射線性樹脂組成物 |
| KR101430533B1 (ko) | 2008-01-04 | 2014-08-22 | 솔브레인 주식회사 | 네거티브 포토레지스트 조성물 및 이를 이용한 어레이기판의 제조 방법 |
| JP4964862B2 (ja) | 2008-12-18 | 2012-07-04 | 凸版印刷株式会社 | 感光性樹脂組成物及びこの感光性樹脂組成物を用いたカラーフィルタ |
| JP2010286796A (ja) | 2009-06-15 | 2010-12-24 | Asahi Kasei E-Materials Corp | 感光性樹脂組成物 |
| JP5765235B2 (ja) * | 2010-09-02 | 2015-08-19 | 東レ株式会社 | 感光性組成物、それから形成された硬化膜および硬化膜を有する素子 |
| JP5997431B2 (ja) * | 2011-11-02 | 2016-09-28 | 旭化成株式会社 | 感光性樹脂組成物 |
| US9237821B2 (en) | 2012-05-15 | 2016-01-19 | Geigtech East Bay Llc | Assembly for mounting shades |
| US8906594B2 (en) * | 2012-06-15 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Negative-working thick film photoresist |
| JP6013150B2 (ja) * | 2012-11-22 | 2016-10-25 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | ポジ型感光性シロキサン組成物の製造方法 |
| KR20150118582A (ko) | 2013-02-12 | 2015-10-22 | 도레이 카부시키가이샤 | 감광성 수지 조성물, 그것을 열경화시켜서 이루어지는 보호막 또는 절연막, 그것을 사용한 터치 패널 및 그 제조 방법 |
| KR102082722B1 (ko) | 2013-07-25 | 2020-02-28 | 도레이 카부시키가이샤 | 터치 패널용 네거티브형 감광성 백색 조성물, 터치 패널 및 터치 패널의 제조 방법 |
| TWI483075B (zh) | 2013-08-08 | 2015-05-01 | Chi Mei Corp | 負型感光性樹脂組成物及其應用 |
| WO2015060240A1 (ja) * | 2013-10-21 | 2015-04-30 | 日産化学工業株式会社 | ネガ型感光性樹脂組成物 |
| KR20150112560A (ko) | 2014-03-28 | 2015-10-07 | 동우 화인켐 주식회사 | 패시베이션층의 표면개질용 수지 조성물 및 그를 사용하여 제조된 이미지센서 |
| JP2015193758A (ja) | 2014-03-31 | 2015-11-05 | 東洋インキScホールディングス株式会社 | オーバーコート用感光性樹脂組成物、ならびにそれを用いた塗膜 |
| KR101767082B1 (ko) | 2014-11-17 | 2017-08-10 | 삼성에스디아이 주식회사 | 감광성 수지 조성물, 이를 이용한 감광성 수지막 및 컬러필터 |
| US10197915B2 (en) | 2014-11-27 | 2019-02-05 | Toray Industries, Inc. | Resin and photosensitive resin composition |
| JP6518436B2 (ja) | 2014-12-19 | 2019-05-22 | 東友ファインケム株式会社Dongwoo Fine−Chem Co., Ltd. | 着色硬化性樹脂組成物 |
| KR20160091646A (ko) | 2015-01-26 | 2016-08-03 | 동우 화인켐 주식회사 | 감광성 수지 조성물, 이로부터 형성된 광경화 패턴 및 이를 포함하는 화상 표시 장치 |
| KR20160118865A (ko) | 2015-04-03 | 2016-10-12 | 삼성에스디아이 주식회사 | 감광성 수지 조성물 및 이를 이용한 컬러필터 |
| US20180259850A1 (en) * | 2017-03-10 | 2018-09-13 | Tokyo Ohka Kogyo Co., Ltd. | Method for forming patterned cured film, photosensitive composition, dry film, and method for producing plated shaped article |
| JP6813398B2 (ja) | 2017-03-10 | 2021-01-13 | 東京応化工業株式会社 | 感光性組成物、ドライフィルム、及びパターン化された硬化膜を形成する方法 |
| WO2019180058A1 (en) | 2018-03-23 | 2019-09-26 | Merck Patent Gmbh | Negative-working ultra thick film photoresist |
-
2019
- 2019-03-20 WO PCT/EP2019/056911 patent/WO2019180058A1/en not_active Ceased
- 2019-03-20 JP JP2020550871A patent/JP7274496B2/ja active Active
- 2019-03-20 KR KR1020207030643A patent/KR102660770B1/ko active Active
- 2019-03-20 SG SG11202007193SA patent/SG11202007193SA/en unknown
- 2019-03-20 US US16/966,998 patent/US11698586B2/en active Active
- 2019-03-20 EP EP19712966.1A patent/EP3769156B1/en active Active
- 2019-03-20 CN CN201980017900.8A patent/CN111837075B/zh active Active
- 2019-03-20 PT PT197129661T patent/PT3769156T/pt unknown
- 2019-03-22 TW TW108109926A patent/TWI818965B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US11698586B2 (en) | 2023-07-11 |
| TWI818965B (zh) | 2023-10-21 |
| EP3769156A1 (en) | 2021-01-27 |
| JP2021518584A (ja) | 2021-08-02 |
| WO2019180058A1 (en) | 2019-09-26 |
| KR102660770B1 (ko) | 2024-04-24 |
| US20200393758A1 (en) | 2020-12-17 |
| SG11202007193SA (en) | 2020-08-28 |
| EP3769156B1 (en) | 2024-03-20 |
| JP7274496B2 (ja) | 2023-05-16 |
| CN111837075B (zh) | 2024-07-05 |
| KR20200136009A (ko) | 2020-12-04 |
| CN111837075A (zh) | 2020-10-27 |
| TW201940978A (zh) | 2019-10-16 |
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