JP7242631B2 - 酸化ケイ素上の超薄型アモルファスシリコン膜の連続性を向上させるための前処理手法 - Google Patents

酸化ケイ素上の超薄型アモルファスシリコン膜の連続性を向上させるための前処理手法 Download PDF

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JP7242631B2
JP7242631B2 JP2020503041A JP2020503041A JP7242631B2 JP 7242631 B2 JP7242631 B2 JP 7242631B2 JP 2020503041 A JP2020503041 A JP 2020503041A JP 2020503041 A JP2020503041 A JP 2020503041A JP 7242631 B2 JP7242631 B2 JP 7242631B2
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substrate
amorphous silicon
sam
silicon layer
patterned features
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JP2020528670A5 (enExample
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ルイ チェン，
イー ヤン，
イーホン チェン，
カーティック ジャナキラマン，
アブヒジット バス マリック，
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2020503041A 2017-07-24 2018-05-24 酸化ケイ素上の超薄型アモルファスシリコン膜の連続性を向上させるための前処理手法 Active JP7242631B2 (ja)

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US201762536275P 2017-07-24 2017-07-24
US62/536,275 2017-07-24
PCT/US2018/034439 WO2019022826A1 (en) 2017-07-24 2018-05-24 PRETREATMENT APPARATUS FOR IMPROVING THE CONTINUITY OF ULTRA-THIN AMORPHOUS SILICON FILM ON SILICON OXIDE

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JP2020528670A JP2020528670A (ja) 2020-09-24
JP2020528670A5 JP2020528670A5 (enExample) 2021-07-26
JP7242631B2 true JP7242631B2 (ja) 2023-03-20

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US (1) US10559465B2 (enExample)
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KR20190035036A (ko) * 2017-09-25 2019-04-03 삼성전자주식회사 박막 형성 장치 및 이를 이용한 비정질 실리콘 막 형성방법
US11315787B2 (en) * 2019-04-17 2022-04-26 Applied Materials, Inc. Multiple spacer patterning schemes
WO2021025874A1 (en) 2019-08-06 2021-02-11 Lam Research Corporation Thermal atomic layer deposition of silicon-containing films
US11198606B2 (en) * 2019-09-23 2021-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Structure for microelectromechanical systems (MEMS) devices to control pressure at high temperature
KR20230043795A (ko) 2020-07-28 2023-03-31 램 리써치 코포레이션 실리콘-함유 막들의 불순물 감소
CN112645277B (zh) * 2020-12-11 2023-11-07 上海集成电路研发中心有限公司 一种新型红外探测器及制备方法
US11640905B2 (en) * 2020-12-17 2023-05-02 Applied Materials, Inc. Plasma enhanced deposition of silicon-containing films at low temperature
CN112599619A (zh) * 2020-12-29 2021-04-02 成都晔凡科技有限公司 制造太阳能电池片的方法和太阳能电池片
KR20240032126A (ko) 2021-07-09 2024-03-08 램 리써치 코포레이션 실리콘-함유 막들의 플라즈마 강화 원자 층 증착
KR20240046605A (ko) * 2021-08-24 2024-04-09 램 리써치 코포레이션 멀티-패터닝에서 인-시츄 코어 보호
TW202419657A (zh) * 2022-07-20 2024-05-16 美商應用材料股份有限公司 共形鉬沉積
CN120153457A (zh) * 2022-09-06 2025-06-13 朗姆研究公司 掺杂硅或硼层的形成
US20250112039A1 (en) * 2023-10-03 2025-04-03 Applied Materials, Inc. Seam-free single operation amorphous silicon gap fill

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