CN117293018A - 改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 - Google Patents

改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 Download PDF

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Publication number
CN117293018A
CN117293018A CN202311074164.4A CN202311074164A CN117293018A CN 117293018 A CN117293018 A CN 117293018A CN 202311074164 A CN202311074164 A CN 202311074164A CN 117293018 A CN117293018 A CN 117293018A
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amorphous silicon
substrate
silicon layer
sam
layer
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Chinese (zh)
Inventor
程睿
Y·杨
陈一宏
K·嘉纳基拉曼
A·B·玛里克
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Applied Materials Inc
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Applied Materials Inc
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    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
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    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
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    • H01L21/02518—Deposited layers
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    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
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    • H01L21/3105—After-treatment
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  • Crystallography & Structural Chemistry (AREA)
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  • Chemical Kinetics & Catalysis (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202311074164.4A 2017-07-24 2018-05-24 改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法 Pending CN117293018A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762536275P 2017-07-24 2017-07-24
US62/536,275 2017-07-24
CN201880036516.8A CN110709967B (zh) 2017-07-24 2018-05-24 改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法
PCT/US2018/034439 WO2019022826A1 (en) 2017-07-24 2018-05-24 PRETREATMENT APPARATUS FOR IMPROVING THE CONTINUITY OF ULTRA-THIN AMORPHOUS SILICON FILM ON SILICON OXIDE

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CN201880036516.8A Active CN110709967B (zh) 2017-07-24 2018-05-24 改善在氧化硅上的超薄非晶硅膜的连续性的预处理方法

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US (1) US10559465B2 (enExample)
JP (1) JP7242631B2 (enExample)
KR (1) KR102509390B1 (enExample)
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WO (1) WO2019022826A1 (enExample)

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US10559465B2 (en) 2020-02-11
CN110709967A (zh) 2020-01-17
KR20200023509A (ko) 2020-03-04
KR102509390B1 (ko) 2023-03-14
WO2019022826A1 (en) 2019-01-31
JP7242631B2 (ja) 2023-03-20
CN110709967B (zh) 2023-09-01
US20190027362A1 (en) 2019-01-24

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