JP7241486B2 - マスクの形成方法 - Google Patents

マスクの形成方法 Download PDF

Info

Publication number
JP7241486B2
JP7241486B2 JP2018155042A JP2018155042A JP7241486B2 JP 7241486 B2 JP7241486 B2 JP 7241486B2 JP 2018155042 A JP2018155042 A JP 2018155042A JP 2018155042 A JP2018155042 A JP 2018155042A JP 7241486 B2 JP7241486 B2 JP 7241486B2
Authority
JP
Japan
Prior art keywords
region
forming
film
photosensitive organic
organic film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018155042A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020030291A5 (enExample
JP2020030291A (ja
Inventor
英民 八重樫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2018155042A priority Critical patent/JP7241486B2/ja
Priority to TW108128453A priority patent/TWI826500B/zh
Priority to US16/542,396 priority patent/US11467497B2/en
Priority to KR1020190101678A priority patent/KR102788657B1/ko
Publication of JP2020030291A publication Critical patent/JP2020030291A/ja
Publication of JP2020030291A5 publication Critical patent/JP2020030291A5/ja
Application granted granted Critical
Publication of JP7241486B2 publication Critical patent/JP7241486B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G03F7/2014—Contact or film exposure of light sensitive plates such as lithographic plates or circuit boards, e.g. in a vacuum frame
    • G03F7/2016—Contact mask being integral part of the photosensitive element and subject to destructive removal during post-exposure processing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2018155042A 2018-08-21 2018-08-21 マスクの形成方法 Active JP7241486B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018155042A JP7241486B2 (ja) 2018-08-21 2018-08-21 マスクの形成方法
TW108128453A TWI826500B (zh) 2018-08-21 2019-08-12 遮罩之形成方法
US16/542,396 US11467497B2 (en) 2018-08-21 2019-08-16 Method of forming mask
KR1020190101678A KR102788657B1 (ko) 2018-08-21 2019-08-20 마스크 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018155042A JP7241486B2 (ja) 2018-08-21 2018-08-21 マスクの形成方法

Publications (3)

Publication Number Publication Date
JP2020030291A JP2020030291A (ja) 2020-02-27
JP2020030291A5 JP2020030291A5 (enExample) 2021-07-26
JP7241486B2 true JP7241486B2 (ja) 2023-03-17

Family

ID=69586279

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018155042A Active JP7241486B2 (ja) 2018-08-21 2018-08-21 マスクの形成方法

Country Status (4)

Country Link
US (1) US11467497B2 (enExample)
JP (1) JP7241486B2 (enExample)
KR (1) KR102788657B1 (enExample)
TW (1) TWI826500B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10796912B2 (en) 2017-05-16 2020-10-06 Lam Research Corporation Eliminating yield impact of stochastics in lithography
JP7653908B2 (ja) 2018-11-14 2025-03-31 ラム リサーチ コーポレーション 次世代リソグラフィにおいて有用なハードマスクを作製する方法
CN120762258A (zh) 2018-12-20 2025-10-10 朗姆研究公司 抗蚀剂的干式显影
TWI849083B (zh) 2019-03-18 2024-07-21 美商蘭姆研究公司 基板處理方法與設備
KR20210149893A (ko) 2019-04-30 2021-12-09 램 리써치 코포레이션 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
EP4651192A3 (en) 2020-01-15 2026-03-04 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US12261044B2 (en) 2020-02-28 2025-03-25 Lam Research Corporation Multi-layer hardmask for defect reduction in EUV patterning
US12436464B2 (en) 2020-04-03 2025-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance EUV lithographic performance
KR102601038B1 (ko) 2020-07-07 2023-11-09 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR20230050333A (ko) * 2020-07-17 2023-04-14 램 리써치 코포레이션 금속-함유 포토레지스트의 현상을 위한 금속 킬레이터들
KR102673863B1 (ko) 2020-11-13 2024-06-11 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
WO2022125388A1 (en) 2020-12-08 2022-06-16 Lam Research Corporation Photoresist development with organic vapor
US12437992B2 (en) * 2021-04-30 2025-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
JP7751735B2 (ja) * 2021-10-26 2025-10-08 ジェミナティオ，インク． 半導体パターニングにおける化学的選択接着及び強度促進剤
US20230146910A1 (en) * 2021-11-11 2023-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Methods and compositions for improved patterning of photoresist
TW202417971A (zh) 2022-07-01 2024-05-01 美商蘭姆研究公司 用於蝕刻停止阻遏之基於金屬氧化物的光阻之循環顯影
CN120958566A (zh) 2023-03-17 2025-11-14 朗姆研究公司 用于单一处理室中euv图案化的干法显影与蚀刻工艺的集成
US20250013153A1 (en) * 2023-07-06 2025-01-09 Tokyo Electron Limited Method of preventing pattern collapse

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003131364A (ja) 2001-08-03 2003-05-09 Infineon Technologies Ag フォトレジストおよびそのパターン化方法
JP2003195521A (ja) 2001-12-14 2003-07-09 Hynix Semiconductor Inc フォトレジストパターンの形成方法及び半導体素子
JP2006091888A (ja) 2004-09-23 2006-04-06 Samsung Electronics Co Ltd 半導体素子製造用のマスクパターン及びその形成方法、並びに微細パターンを有する半導体素子の製造方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006064851A (ja) * 2004-08-25 2006-03-09 Renesas Technology Corp 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置
JP2006186020A (ja) * 2004-12-27 2006-07-13 Fujitsu Ltd 半導体装置の製造方法
CN102257178B (zh) * 2008-12-16 2014-05-07 日本帕卡濑精株式会社 金属材料用表面处理剂
US8980418B2 (en) * 2011-03-24 2015-03-17 Uchicago Argonne, Llc Sequential infiltration synthesis for advanced lithography
JP5650086B2 (ja) * 2011-06-28 2015-01-07 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
JP5817271B2 (ja) 2011-07-12 2015-11-18 大日本印刷株式会社 レジストパターン形成方法
US20130177847A1 (en) * 2011-12-12 2013-07-11 Applied Materials, Inc. Photoresist for improved lithographic control
JP5882776B2 (ja) * 2012-02-14 2016-03-09 信越化学工業株式会社 レジスト下層膜形成用組成物、及びパターン形成方法
KR102044968B1 (ko) * 2012-04-23 2019-12-05 닛산 가가쿠 가부시키가이샤 첨가제를 포함하는 규소함유 euv레지스트 하층막 형성 조성물
US9159559B2 (en) * 2013-03-11 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography layer with quenchers to prevent pattern collapse
JP2016136200A (ja) * 2015-01-23 2016-07-28 株式会社東芝 半導体装置及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003131364A (ja) 2001-08-03 2003-05-09 Infineon Technologies Ag フォトレジストおよびそのパターン化方法
JP2003195521A (ja) 2001-12-14 2003-07-09 Hynix Semiconductor Inc フォトレジストパターンの形成方法及び半導体素子
JP2006091888A (ja) 2004-09-23 2006-04-06 Samsung Electronics Co Ltd 半導体素子製造用のマスクパターン及びその形成方法、並びに微細パターンを有する半導体素子の製造方法

Also Published As

Publication number Publication date
KR102788657B1 (ko) 2025-03-28
TW202022489A (zh) 2020-06-16
US20200066536A1 (en) 2020-02-27
US11467497B2 (en) 2022-10-11
TWI826500B (zh) 2023-12-21
JP2020030291A (ja) 2020-02-27
KR20200021897A (ko) 2020-03-02

Similar Documents

Publication Publication Date Title
JP7241486B2 (ja) マスクの形成方法
KR100639680B1 (ko) 반도체 소자의 미세 패턴 형성방법
JP2919004B2 (ja) パターン形成方法
TWI488218B (zh) 於微影應用中之輻射敏感材料線條細窄化之方法
US20100173247A1 (en) Substrate planarization with imprint materials and processes
JP4921898B2 (ja) 半導体素子の製造方法
CN108983546A (zh) 微影方法
US20130330672A1 (en) Method for enhancing lithographic imaging of isolated and semi-isolated features
US7662542B2 (en) Pattern forming method and semiconductor device manufacturing method
US7491648B2 (en) Method of patterning a photoresist film using a lithographic
US12543542B2 (en) Patterning method using secondary resist surface functionalization for mask formation
US6107002A (en) Reducing resist shrinkage during device fabrication
TWI811448B (zh) 遮罩之形成方法
KR102668037B1 (ko) 패턴 형성 방법
JP4417090B2 (ja) パターン形成方法、マスクおよび露光装置
US8026183B2 (en) Method of forming a resist pattern
JPH11153867A (ja) レジストパターン形成方法
JP2005221801A (ja) レジストパターン形成方法
JP2658859B2 (ja) レジストパターンの形成方法
JPH10333341A (ja) レジストパターン形成方法及び半導体装置の製造方法
US20090220896A1 (en) Pattern forming method
JPH0651490A (ja) 位相シフト層を有するフォトマスクの製造方法
JPH04221959A (ja) レジストパターンの形成方法
JP2005148644A (ja) レジストパターン形成方法
KR20010063481A (ko) 반도체 소자의 미세 패턴 형성 방법

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210520

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210520

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220428

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220510

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220706

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221101

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221206

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230207

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230307

R150 Certificate of patent or registration of utility model

Ref document number: 7241486

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250