JP2020030291A5 - - Google Patents
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- Publication number
- JP2020030291A5 JP2020030291A5 JP2018155042A JP2018155042A JP2020030291A5 JP 2020030291 A5 JP2020030291 A5 JP 2020030291A5 JP 2018155042 A JP2018155042 A JP 2018155042A JP 2018155042 A JP2018155042 A JP 2018155042A JP 2020030291 A5 JP2020030291 A5 JP 2020030291A5
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- film
- photoresist
- thickness
- underlying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 239000003795 chemical substances by application Substances 0.000 description 2
- 125000006239 protecting group Chemical group 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 125000000686 lactone group Chemical group 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018155042A JP7241486B2 (ja) | 2018-08-21 | 2018-08-21 | マスクの形成方法 |
| TW108128453A TWI826500B (zh) | 2018-08-21 | 2019-08-12 | 遮罩之形成方法 |
| US16/542,396 US11467497B2 (en) | 2018-08-21 | 2019-08-16 | Method of forming mask |
| KR1020190101678A KR102788657B1 (ko) | 2018-08-21 | 2019-08-20 | 마스크 형성 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018155042A JP7241486B2 (ja) | 2018-08-21 | 2018-08-21 | マスクの形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020030291A JP2020030291A (ja) | 2020-02-27 |
| JP2020030291A5 true JP2020030291A5 (enExample) | 2021-07-26 |
| JP7241486B2 JP7241486B2 (ja) | 2023-03-17 |
Family
ID=69586279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018155042A Active JP7241486B2 (ja) | 2018-08-21 | 2018-08-21 | マスクの形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11467497B2 (enExample) |
| JP (1) | JP7241486B2 (enExample) |
| KR (1) | KR102788657B1 (enExample) |
| TW (1) | TWI826500B (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| US11921427B2 (en) | 2018-11-14 | 2024-03-05 | Lam Research Corporation | Methods for making hard masks useful in next-generation lithography |
| CN113227909B (zh) | 2018-12-20 | 2025-07-04 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| KR20210149893A (ko) | 2019-04-30 | 2021-12-09 | 램 리써치 코포레이션 | 극자외선 리소그래피 레지스트 개선을 위한 원자 층 에칭 및 선택적인 증착 프로세스 |
| TWI837391B (zh) | 2019-06-26 | 2024-04-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| WO2021146138A1 (en) | 2020-01-15 | 2021-07-22 | Lam Research Corporation | Underlayer for photoresist adhesion and dose reduction |
| US12261044B2 (en) | 2020-02-28 | 2025-03-25 | Lam Research Corporation | Multi-layer hardmask for defect reduction in EUV patterning |
| KR20220164031A (ko) | 2020-04-03 | 2022-12-12 | 램 리써치 코포레이션 | Euv 리소그래피 성능을 향상시키기 위한 사전 노출 포토레지스트 경화 |
| WO2022010809A1 (en) | 2020-07-07 | 2022-01-13 | Lam Research Corporation | Integrated dry processes for patterning radiation photoresist patterning |
| US20230266670A1 (en) * | 2020-07-17 | 2023-08-24 | Lam Research Corporation | Metal chelators for development of metal-containing photoresist |
| KR102797476B1 (ko) | 2020-11-13 | 2025-04-21 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| US12437992B2 (en) * | 2021-04-30 | 2025-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device |
| JP7751735B2 (ja) * | 2021-10-26 | 2025-10-08 | ジェミナティオ，インク． | 半導体パターニングにおける化学的選択接着及び強度促進剤 |
| US20230146910A1 (en) * | 2021-11-11 | 2023-05-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods and compositions for improved patterning of photoresist |
| JP7769144B2 (ja) | 2023-03-17 | 2025-11-12 | ラム リサーチ コーポレーション | Ｅｕｖパターニングのための乾式現像およびエッチングプロセスの単一プロセスチャンバへの統合 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10138105A1 (de) | 2001-08-03 | 2003-02-27 | Infineon Technologies Ag | Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks |
| KR100569536B1 (ko) * | 2001-12-14 | 2006-04-10 | 주식회사 하이닉스반도체 | Ｒｅｌａｃｓ 물질을 이용하여 패턴 붕괴를 방지하는 방법 |
| JP2006064851A (ja) * | 2004-08-25 | 2006-03-09 | Renesas Technology Corp | 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置 |
| KR100640587B1 (ko) | 2004-09-23 | 2006-11-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| JP2006186020A (ja) * | 2004-12-27 | 2006-07-13 | Fujitsu Ltd | 半導体装置の製造方法 |
| CN102257178B (zh) * | 2008-12-16 | 2014-05-07 | 日本帕卡濑精株式会社 | 金属材料用表面处理剂 |
| US8980418B2 (en) * | 2011-03-24 | 2015-03-17 | Uchicago Argonne, Llc | Sequential infiltration synthesis for advanced lithography |
| JP5650086B2 (ja) * | 2011-06-28 | 2015-01-07 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
| JP5817271B2 (ja) | 2011-07-12 | 2015-11-18 | 大日本印刷株式会社 | レジストパターン形成方法 |
| US20130177847A1 (en) * | 2011-12-12 | 2013-07-11 | Applied Materials, Inc. | Photoresist for improved lithographic control |
| JP5882776B2 (ja) * | 2012-02-14 | 2016-03-09 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
| JP6120013B2 (ja) * | 2012-04-23 | 2017-04-26 | 日産化学工業株式会社 | 添加剤を含むケイ素含有ｅｕｖレジスト下層膜形成組成物 |
| US9159559B2 (en) * | 2013-03-11 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography layer with quenchers to prevent pattern collapse |
| JP2016136200A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
-
2018
- 2018-08-21 JP JP2018155042A patent/JP7241486B2/ja active Active
-
2019
- 2019-08-12 TW TW108128453A patent/TWI826500B/zh active
- 2019-08-16 US US16/542,396 patent/US11467497B2/en active Active
- 2019-08-20 KR KR1020190101678A patent/KR102788657B1/ko active Active
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