JP2020030291A5 - - Google Patents
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- Publication number
- JP2020030291A5 JP2020030291A5 JP2018155042A JP2018155042A JP2020030291A5 JP 2020030291 A5 JP2020030291 A5 JP 2020030291A5 JP 2018155042 A JP2018155042 A JP 2018155042A JP 2018155042 A JP2018155042 A JP 2018155042A JP 2020030291 A5 JP2020030291 A5 JP 2020030291A5
- Authority
- JP
- Japan
- Prior art keywords
- photoresist film
- film
- photoresist
- thickness
- underlying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 239000003795 chemical substances by application Substances 0.000 description 2
- 125000006239 protecting group Chemical group 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 125000005073 adamantyl group Chemical group C12(CC3CC(CC(C1)C3)C2)* 0.000 description 1
- 125000000686 lactone group Chemical group 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018155042A JP7241486B2 (ja) | 2018-08-21 | 2018-08-21 | マスクの形成方法 |
| TW108128453A TWI826500B (zh) | 2018-08-21 | 2019-08-12 | 遮罩之形成方法 |
| US16/542,396 US11467497B2 (en) | 2018-08-21 | 2019-08-16 | Method of forming mask |
| KR1020190101678A KR102788657B1 (ko) | 2018-08-21 | 2019-08-20 | 마스크 형성 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018155042A JP7241486B2 (ja) | 2018-08-21 | 2018-08-21 | マスクの形成方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2020030291A JP2020030291A (ja) | 2020-02-27 |
| JP2020030291A5 true JP2020030291A5 (enExample) | 2021-07-26 |
| JP7241486B2 JP7241486B2 (ja) | 2023-03-17 |
Family
ID=69586279
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018155042A Active JP7241486B2 (ja) | 2018-08-21 | 2018-08-21 | マスクの形成方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US11467497B2 (enExample) |
| JP (1) | JP7241486B2 (enExample) |
| KR (1) | KR102788657B1 (enExample) |
| TW (1) | TWI826500B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10796912B2 (en) | 2017-05-16 | 2020-10-06 | Lam Research Corporation | Eliminating yield impact of stochastics in lithography |
| KR102955829B1 (ko) | 2018-11-14 | 2026-04-23 | 램 리써치 코포레이션 | 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들 |
| CN120762258A (zh) | 2018-12-20 | 2025-10-10 | 朗姆研究公司 | 抗蚀剂的干式显影 |
| US12125711B2 (en) | 2019-03-18 | 2024-10-22 | Lam Research Corporation | Reducing roughness of extreme ultraviolet lithography resists |
| WO2020223011A1 (en) | 2019-04-30 | 2020-11-05 | Lam Research Corporation | Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement |
| TWI910974B (zh) | 2019-06-26 | 2026-01-01 | 美商蘭姆研究公司 | 利用鹵化物化學品的光阻顯影 |
| TWI849159B (zh) | 2019-06-28 | 2024-07-21 | 美商蘭姆研究公司 | 光阻膜的乾式腔室清潔 |
| US12601974B2 (en) | 2019-06-28 | 2026-04-14 | Lam Research Corporation | Bake strategies to enhance lithographic performance of metal-containing resist |
| CN114200776A (zh) | 2020-01-15 | 2022-03-18 | 朗姆研究公司 | 用于光刻胶粘附和剂量减少的底层 |
| CN115244664A (zh) | 2020-02-28 | 2022-10-25 | 朗姆研究公司 | 用于减少euv图案化缺陷的多层硬掩模 |
| CN115362414A (zh) | 2020-04-03 | 2022-11-18 | 朗姆研究公司 | 用于增强euv光刻性能的暴露前光致抗蚀剂固化 |
| JP2023530299A (ja) | 2020-06-22 | 2023-07-14 | ラム リサーチ コーポレーション | 金属含有フォトレジスト堆積のための表面改質 |
| KR102601038B1 (ko) | 2020-07-07 | 2023-11-09 | 램 리써치 코포레이션 | 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스 |
| JP7832168B2 (ja) * | 2020-07-17 | 2026-03-17 | ラム リサーチ コーポレーション | 金属含有フォトレジストの現像のための金属キレート剤 |
| KR102673863B1 (ko) | 2020-11-13 | 2024-06-11 | 램 리써치 코포레이션 | 포토레지스트의 건식 제거를 위한 프로세스 툴 |
| KR20250142946A (ko) | 2020-12-08 | 2025-09-30 | 램 리써치 코포레이션 | 유기 증기를 사용한 포토레지스트 현상 |
| US12437992B2 (en) * | 2021-04-30 | 2025-10-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing a semiconductor device |
| US20240419079A1 (en) * | 2021-10-26 | 2024-12-19 | Geminatio, Inc. | Chemically selective adhesion and strength promoters in semiconductor patterning |
| US12638775B2 (en) * | 2021-11-11 | 2026-05-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods and compositions for improved patterning of photoresist |
| US12504692B2 (en) | 2022-07-01 | 2025-12-23 | Lam Research Corporation | Cyclic development of metal oxide based photoresist for etch stop deterrence |
| EP4681251A1 (en) | 2023-03-17 | 2026-01-21 | LAM Research Corporation | Integration of dry development and etch processes for euv patterning in a single process chamber |
| US12638773B2 (en) * | 2023-07-06 | 2026-05-26 | Tokyo Electron Limited | Method of preventing pattern collapse |
| KR20250034920A (ko) | 2023-07-27 | 2025-03-11 | 램 리써치 코포레이션 | 금속-함유 포토레지스트에 대한 올-인-원 건식 현상 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10138105A1 (de) | 2001-08-03 | 2003-02-27 | Infineon Technologies Ag | Fotolack und Verfahren zum Strukturieren eines solchen Fotolacks |
| KR100569536B1 (ko) * | 2001-12-14 | 2006-04-10 | 주식회사 하이닉스반도체 | Ｒｅｌａｃｓ 물질을 이용하여 패턴 붕괴를 방지하는 방법 |
| JP2006064851A (ja) * | 2004-08-25 | 2006-03-09 | Renesas Technology Corp | 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置 |
| KR100640587B1 (ko) | 2004-09-23 | 2006-11-01 | 삼성전자주식회사 | 반도체 소자 제조용 마스크 패턴 및 그 형성 방법과 미세패턴을 가지는 반도체 소자의 제조 방법 |
| JP2006186020A (ja) * | 2004-12-27 | 2006-07-13 | Fujitsu Ltd | 半導体装置の製造方法 |
| WO2010070728A1 (ja) * | 2008-12-16 | 2010-06-24 | 日本パーカライジング株式会社 | 金属材料用表面処理剤 |
| US8980418B2 (en) * | 2011-03-24 | 2015-03-17 | Uchicago Argonne, Llc | Sequential infiltration synthesis for advanced lithography |
| JP5650086B2 (ja) * | 2011-06-28 | 2015-01-07 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
| JP5817271B2 (ja) | 2011-07-12 | 2015-11-18 | 大日本印刷株式会社 | レジストパターン形成方法 |
| US20130177847A1 (en) * | 2011-12-12 | 2013-07-11 | Applied Materials, Inc. | Photoresist for improved lithographic control |
| JP5882776B2 (ja) * | 2012-02-14 | 2016-03-09 | 信越化学工業株式会社 | レジスト下層膜形成用組成物、及びパターン形成方法 |
| CN104246614B (zh) * | 2012-04-23 | 2020-09-08 | 日产化学工业株式会社 | 含有添加剂的含硅极紫外抗蚀剂下层膜形成用组合物 |
| US9159559B2 (en) * | 2013-03-11 | 2015-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography layer with quenchers to prevent pattern collapse |
| JP2016136200A (ja) * | 2015-01-23 | 2016-07-28 | 株式会社東芝 | 半導体装置及び半導体装置の製造方法 |
-
2018
- 2018-08-21 JP JP2018155042A patent/JP7241486B2/ja active Active
-
2019
- 2019-08-12 TW TW108128453A patent/TWI826500B/zh active
- 2019-08-16 US US16/542,396 patent/US11467497B2/en active Active
- 2019-08-20 KR KR1020190101678A patent/KR102788657B1/ko active Active
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