JP2020030291A5 - - Google Patents

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JP2020030291A5
JP2020030291A5 JP2018155042A JP2018155042A JP2020030291A5 JP 2020030291 A5 JP2020030291 A5 JP 2020030291A5 JP 2018155042 A JP2018155042 A JP 2018155042A JP 2018155042 A JP2018155042 A JP 2018155042A JP 2020030291 A5 JP2020030291 A5 JP 2020030291A5
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Japan
Prior art keywords
photoresist film
film
photoresist
thickness
underlying
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JP2018155042A
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JP2020030291A (en
JP7241486B2 (en
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Priority to JP2018155042A priority Critical patent/JP7241486B2/en
Priority claimed from JP2018155042A external-priority patent/JP7241486B2/en
Priority to TW108128453A priority patent/TWI826500B/en
Priority to US16/542,396 priority patent/US11467497B2/en
Priority to KR1020190101678A priority patent/KR20200021897A/en
Publication of JP2020030291A publication Critical patent/JP2020030291A/en
Publication of JP2020030291A5 publication Critical patent/JP2020030291A5/ja
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ステップＳ１２では、図２（ｂ）に示すように、下地膜１０２上にフォトレジスト膜１０３を形成する。第１の実施形態では、フォトレジスト膜１０３としてポジ型のフォトレジスト膜を用いる。フォトレジスト膜１０３は、例えばＫｒＦレジスト、ＡｒＦレジスト、極端紫外線（Extreme Ultra Violet：ＥＵＶ）レジスト等の化学増幅型のフォトレジストにより形成されている。フォトレジスト膜１０３は、例えば、ベース樹脂及び光酸発生剤（Photo Acid Generator：ＰＡＧ）を含み、ベース樹脂は、図４（ａ）に示すように、極性の低い保護基を有する。保護基は、例えばラクトン基若しくはアダマンチル基又はこれらの両方である。フォトレジスト膜１０３中に下地膜１０２との反応により変質層が生成してもよいが、フォトレジスト膜１０３は変質層上に下地膜１０２と反応していない部分を含むように形成する。例えば、フォトレジスト膜１０３はスピンコーティング法により形成することができ、その厚さは５０ｎｍ〜１００ｎｍとする。フォトレジスト膜１０３の厚さが５０ｎｍ未満であると、厚さ方向での変質層の割合が過剰になるおそれがある。また、フォトレジスト膜１０３の厚さが１００ｎｍ超であると、倒れが生じやすくなるおそれがある。フォトレジスト膜１０３は感光性有機膜の一例である。 In step S12, as shown in FIG. 2B, the photoresist film 103 is formed on the undercoat film 102. In the first embodiment, a positive photoresist film is used as the photoresist film 103. The photoresist film 103 is formed of a chemically amplified photoresist such as KrF resist, ArF resist, and Extreme Ultra Violet (EUV) resist. The photoresist film 103 contains, for example, a base resin and a photo acid generator (PAG), and the base resin has a low-polarity protecting group as shown in FIG. 4 (a). The protecting group is, for example, a lactone group, an adamantyl group, or both. An altered layer may be formed in the photoresist film 103 by reaction with the underlying film 102, but the photoresist film 103 is formed so as to include a portion on the photoresist film 103 that has not reacted with the underlying film 102. For example, the photoresist film 103 can be formed by a spin coating method and has a thickness of 50 nm to 100 nm. If the thickness of the photoresist film 103 is less than 5 0 nm, there is a possibility that the ratio of the deteriorated layer in the thickness direction becomes excessive. Further, if the thickness of the photoresist film 103 is more than 100 nm, it may easily collapse. The photoresist film 103 is an example of a photosensitive organic film.

ステップＳ３１では、図８（ｂ）に示すように、下地膜１０２上にフォトレジスト膜１０３を形成する。フォトレジスト膜１０３中に下地膜１０２との反応により変質層が生成してもよいが、フォトレジスト膜１０３は変質層上に下地膜１０２と反応していない部分を含むように形成する。例えば、フォトレジスト膜１０３はスピンコーティング法により形成することができ、その厚さは５０ｎｍ〜１００ｎｍとする。第３の実施形態では、第１の実施形態とは異なり、下地膜１０２に含有されている処理剤は、下地膜１０２に留めておく。なお、処理剤の一部が不可避的にフォトレジスト膜１０３に浸潤してもよい。
In step S31, as shown in FIG. 8B, the photoresist film 103 is formed on the undercoat film 102. An altered layer may be formed in the photoresist film 103 by reaction with the underlying film 102, but the photoresist film 103 is formed so as to include a portion on the photoresist film 103 that has not reacted with the underlying film 102. For example, the photoresist film 103 may be formed by spin coating, the thickness is set to 5 0nm~100nm. In the third embodiment, unlike the first embodiment, the treatment agent contained in the base film 102 is retained in the base film 102. A part of the treatment agent may inevitably infiltrate the photoresist film 103.

JP2018155042A 2018-08-21 2018-08-21 Mask forming method Active JP7241486B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2018155042A JP7241486B2 (en) 2018-08-21 2018-08-21 Mask forming method
TW108128453A TWI826500B (en) 2018-08-21 2019-08-12 How to form a mask
US16/542,396 US11467497B2 (en) 2018-08-21 2019-08-16 Method of forming mask
KR1020190101678A KR20200021897A (en) 2018-08-21 2019-08-20 Method for forming mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018155042A JP7241486B2 (en) 2018-08-21 2018-08-21 Mask forming method

Publications (3)

Publication Number Publication Date
JP2020030291A JP2020030291A (en) 2020-02-27
JP2020030291A5 true JP2020030291A5 (en) 2021-07-26
JP7241486B2 JP7241486B2 (en) 2023-03-17

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JP2018155042A Active JP7241486B2 (en) 2018-08-21 2018-08-21 Mask forming method

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US (1) US11467497B2 (en)
JP (1) JP7241486B2 (en)
KR (1) KR20200021897A (en)
TW (1) TWI826500B (en)

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Publication number Priority date Publication date Assignee Title
JP2022507368A (en) 2018-11-14 2022-01-18 ラム リサーチ コーポレーション How to make a hard mask useful for next generation lithography
CN113785381A (en) 2019-04-30 2021-12-10 朗姆研究公司 Improved atomic layer etch and selective deposition process for EUV lithographic resist
TWI837391B (en) 2019-06-26 2024-04-01 美商蘭姆研究公司 Photoresist development with halide chemistries
JP7189375B2 (en) 2020-01-15 2022-12-13 ラム リサーチ コーポレーション Underlayer for photoresist adhesion and dose reduction
JP2023534962A (en) * 2020-07-17 2023-08-15 ラム リサーチ コーポレーション Metal chelating agents for the development of metal-containing photoresists
US20220351964A1 (en) * 2021-04-30 2022-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device
US20230146910A1 (en) * 2021-11-11 2023-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Methods and compositions for improved patterning of photoresist

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DE10138105A1 (en) 2001-08-03 2003-02-27 Infineon Technologies Ag Photoresist and method for structuring such a photoresist
KR100569536B1 (en) 2001-12-14 2006-04-10 주식회사 하이닉스반도체 Pattern Collapse inhibiting method using RELACS material
JP2006064851A (en) * 2004-08-25 2006-03-09 Renesas Technology Corp Micropattern forming material, method for forming micro resist pattern, and electronic device
KR100640587B1 (en) 2004-09-23 2006-11-01 삼성전자주식회사 Mask pattern for manufacturing semiconductor device and method of forming the same and method of manufacturing semiconductor device having fine patterns
JP2006186020A (en) * 2004-12-27 2006-07-13 Fujitsu Ltd Method of manufacturing semiconductor device
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JP5650086B2 (en) * 2011-06-28 2015-01-07 信越化学工業株式会社 Resist underlayer film forming composition and pattern forming method
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JP5882776B2 (en) * 2012-02-14 2016-03-09 信越化学工業株式会社 Resist underlayer film forming composition and pattern forming method
US9159559B2 (en) * 2013-03-11 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography layer with quenchers to prevent pattern collapse
JP2016136200A (en) * 2015-01-23 2016-07-28 株式会社東芝 Semiconductor device and method for manufacturing semiconductor device

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