JP7238646B2 - 駆動回路及び半導体モジュール - Google Patents

駆動回路及び半導体モジュール Download PDF

Info

Publication number
JP7238646B2
JP7238646B2 JP2019127043A JP2019127043A JP7238646B2 JP 7238646 B2 JP7238646 B2 JP 7238646B2 JP 2019127043 A JP2019127043 A JP 2019127043A JP 2019127043 A JP2019127043 A JP 2019127043A JP 7238646 B2 JP7238646 B2 JP 7238646B2
Authority
JP
Japan
Prior art keywords
switching element
gate
voltage
preamplifier
threshold voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019127043A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021013113A (ja
JP2021013113A5 (https=
Inventor
寛 吉田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2019127043A priority Critical patent/JP7238646B2/ja
Priority to US16/774,671 priority patent/US11463081B2/en
Priority to DE102020116990.6A priority patent/DE102020116990A1/de
Priority to CN202010630753.6A priority patent/CN112202319B/zh
Publication of JP2021013113A publication Critical patent/JP2021013113A/ja
Publication of JP2021013113A5 publication Critical patent/JP2021013113A5/ja
Application granted granted Critical
Publication of JP7238646B2 publication Critical patent/JP7238646B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
JP2019127043A 2019-07-08 2019-07-08 駆動回路及び半導体モジュール Active JP7238646B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019127043A JP7238646B2 (ja) 2019-07-08 2019-07-08 駆動回路及び半導体モジュール
US16/774,671 US11463081B2 (en) 2019-07-08 2020-01-28 Driving circuit and semiconductor module
DE102020116990.6A DE102020116990A1 (de) 2019-07-08 2020-06-29 Ansteuerschaltung und Halbleitermodul
CN202010630753.6A CN112202319B (zh) 2019-07-08 2020-07-03 驱动电路及半导体模块

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019127043A JP7238646B2 (ja) 2019-07-08 2019-07-08 駆動回路及び半導体モジュール

Publications (3)

Publication Number Publication Date
JP2021013113A JP2021013113A (ja) 2021-02-04
JP2021013113A5 JP2021013113A5 (https=) 2021-10-07
JP7238646B2 true JP7238646B2 (ja) 2023-03-14

Family

ID=74006515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019127043A Active JP7238646B2 (ja) 2019-07-08 2019-07-08 駆動回路及び半導体モジュール

Country Status (4)

Country Link
US (1) US11463081B2 (https=)
JP (1) JP7238646B2 (https=)
CN (1) CN112202319B (https=)
DE (1) DE102020116990A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116207952B (zh) * 2023-02-27 2025-10-21 中国电子科技集团公司第二十四研究所 一种用于电源管理的mosfet驱动电路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211836A (ja) 2010-03-30 2011-10-20 Panasonic Corp スイッチングデバイス駆動装置および半導体装置
WO2012169041A1 (ja) 2011-06-09 2012-12-13 三菱電機株式会社 ゲート駆動回路
JP2014222991A (ja) 2013-05-14 2014-11-27 カルソニックカンセイ株式会社 インバータ制御装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2854204B2 (ja) * 1991-11-07 1999-02-03 川崎製鉄株式会社 Ａ／ｄコンバータ
US5327131A (en) 1991-11-07 1994-07-05 Kawasaki Steel Corporation Parallel A/D converter having comparator threshold voltages defined by MOS transistor geometries
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
JP3152204B2 (ja) 1998-06-02 2001-04-03 日本電気株式会社 スルーレート出力回路
JP4770064B2 (ja) * 2001-06-05 2011-09-07 富士電機株式会社 Ｉｐｍ回路
JP2004048843A (ja) * 2002-07-09 2004-02-12 Meidensha Corp 電圧駆動型パワー素子のドライブ回路
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
TWI513190B (zh) * 2011-07-22 2015-12-11 Hon Hai Prec Ind Co Ltd 使金氧半導體場效電晶體輸出線性電流的閘極驅動電路
JP2014079086A (ja) * 2012-10-10 2014-05-01 Fuji Electric Co Ltd 電圧駆動型半導体素子の駆動回路
JPWO2016207956A1 (ja) 2015-06-22 2017-11-16 三菱電機株式会社 駆動回路、半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011211836A (ja) 2010-03-30 2011-10-20 Panasonic Corp スイッチングデバイス駆動装置および半導体装置
WO2012169041A1 (ja) 2011-06-09 2012-12-13 三菱電機株式会社 ゲート駆動回路
JP2014222991A (ja) 2013-05-14 2014-11-27 カルソニックカンセイ株式会社 インバータ制御装置

Also Published As

Publication number Publication date
JP2021013113A (ja) 2021-02-04
US20210013877A1 (en) 2021-01-14
CN112202319B (zh) 2024-05-31
US11463081B2 (en) 2022-10-04
CN112202319A (zh) 2021-01-08
DE102020116990A1 (de) 2021-01-14

Similar Documents

Publication Publication Date Title
CN107534383B (zh) 驱动电路、开关控制电路以及开关装置
US8536847B2 (en) Semiconductor device
JP5991939B2 (ja) 半導体デバイス駆動回路および半導体デバイス駆動装置
JP2011211836A (ja) スイッチングデバイス駆動装置および半導体装置
JP2008306731A (ja) 供給電圧のオン／オフを目的とするハイサイド半導体スイッチのスイッチ制御回路
KR101297460B1 (ko) 게이트 구동 장치
JP2004215458A (ja) 半導体スイッチング素子の駆動回路
CN106357251A (zh) 半导体开关装置
JP2006148323A (ja) 半導体集積回路
CN111917403A (zh) 用于降低死区时间效率低下的栅极驱动器电路
CN112425074A (zh) 开关电路以及电力转换装置
JP4317825B2 (ja) インバータ装置
JP5139793B2 (ja) 電力変換装置
CN106533129A (zh) 自举补偿电路及功率模块
JP5582123B2 (ja) 半導体装置
KR20170110538A (ko) 레벨 시프트 회로
JP7238646B2 (ja) 駆動回路及び半導体モジュール
CN115765702A (zh) 半导体元件驱动电路及半导体元件驱动装置
CN111771333B (zh) 信号传输电路、开关驱动装置以及功率模块
CN111446846A (zh) 开关元件的驱动装置
US11664796B2 (en) Driver circuit and semiconductor device
JP4321491B2 (ja) 電圧駆動型半導体素子の駆動装置
JP4888199B2 (ja) 負荷駆動装置
JP6677034B2 (ja) ゲート駆動回路、半導体装置
JP5354044B2 (ja) 電圧駆動型素子を駆動するための駆動回路

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210827

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210827

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220810

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220823

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220929

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221129

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221212

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230131

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230213

R150 Certificate of patent or registration of utility model

Ref document number: 7238646

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250