CN112202319B - 驱动电路及半导体模块 - Google Patents

驱动电路及半导体模块 Download PDF

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Publication number
CN112202319B
CN112202319B CN202010630753.6A CN202010630753A CN112202319B CN 112202319 B CN112202319 B CN 112202319B CN 202010630753 A CN202010630753 A CN 202010630753A CN 112202319 B CN112202319 B CN 112202319B
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CN
China
Prior art keywords
gate
switching element
voltage
preamplifier
driving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010630753.6A
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English (en)
Chinese (zh)
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CN112202319A (zh
Inventor
吉田宽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication date
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Publication of CN112202319A publication Critical patent/CN112202319A/zh
Application granted granted Critical
Publication of CN112202319B publication Critical patent/CN112202319B/zh
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
CN202010630753.6A 2019-07-08 2020-07-03 驱动电路及半导体模块 Active CN112202319B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019127043A JP7238646B2 (ja) 2019-07-08 2019-07-08 駆動回路及び半導体モジュール
JP2019-127043 2019-07-08

Publications (2)

Publication Number Publication Date
CN112202319A CN112202319A (zh) 2021-01-08
CN112202319B true CN112202319B (zh) 2024-05-31

Family

ID=74006515

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010630753.6A Active CN112202319B (zh) 2019-07-08 2020-07-03 驱动电路及半导体模块

Country Status (4)

Country Link
US (1) US11463081B2 (https=)
JP (1) JP7238646B2 (https=)
CN (1) CN112202319B (https=)
DE (1) DE102020116990A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116207952B (zh) * 2023-02-27 2025-10-21 中国电子科技集团公司第二十四研究所 一种用于电源管理的mosfet驱动电路

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11346147A (ja) * 1998-06-02 1999-12-14 Nec Corp スルーレート出力回路
JP2002369496A (ja) * 2001-06-05 2002-12-20 Fuji Electric Co Ltd Ｉｐｍ回路
JP2004048843A (ja) * 2002-07-09 2004-02-12 Meidensha Corp 電圧駆動型パワー素子のドライブ回路
CN102208864A (zh) * 2010-03-30 2011-10-05 松下电器产业株式会社 开关设备驱动装置和半导体装置
CN102237781A (zh) * 2010-05-06 2011-11-09 Ls产电株式会社 开关栅极驱动器
CN102891671A (zh) * 2011-07-22 2013-01-23 吴奕莹 金属氧化物半导体场效晶体管输出线性电流的栅极驱动电路
JP2014079086A (ja) * 2012-10-10 2014-05-01 Fuji Electric Co Ltd 電圧駆動型半導体素子の駆動回路
JP2014222991A (ja) * 2013-05-14 2014-11-27 カルソニックカンセイ株式会社 インバータ制御装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2854204B2 (ja) * 1991-11-07 1999-02-03 川崎製鉄株式会社 Ａ／ｄコンバータ
US5327131A (en) 1991-11-07 1994-07-05 Kawasaki Steel Corporation Parallel A/D converter having comparator threshold voltages defined by MOS transistor geometries
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
CN103620930B (zh) * 2011-06-09 2016-04-06 三菱电机株式会社 栅极驱动电路
JPWO2016207956A1 (ja) 2015-06-22 2017-11-16 三菱電機株式会社 駆動回路、半導体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11346147A (ja) * 1998-06-02 1999-12-14 Nec Corp スルーレート出力回路
JP2002369496A (ja) * 2001-06-05 2002-12-20 Fuji Electric Co Ltd Ｉｐｍ回路
JP2004048843A (ja) * 2002-07-09 2004-02-12 Meidensha Corp 電圧駆動型パワー素子のドライブ回路
CN102208864A (zh) * 2010-03-30 2011-10-05 松下电器产业株式会社 开关设备驱动装置和半导体装置
CN102237781A (zh) * 2010-05-06 2011-11-09 Ls产电株式会社 开关栅极驱动器
CN102891671A (zh) * 2011-07-22 2013-01-23 吴奕莹 金属氧化物半导体场效晶体管输出线性电流的栅极驱动电路
JP2014079086A (ja) * 2012-10-10 2014-05-01 Fuji Electric Co Ltd 電圧駆動型半導体素子の駆動回路
JP2014222991A (ja) * 2013-05-14 2014-11-27 カルソニックカンセイ株式会社 インバータ制御装置

Also Published As

Publication number Publication date
JP7238646B2 (ja) 2023-03-14
JP2021013113A (ja) 2021-02-04
US20210013877A1 (en) 2021-01-14
US11463081B2 (en) 2022-10-04
CN112202319A (zh) 2021-01-08
DE102020116990A1 (de) 2021-01-14

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