DE102020116990A1 - Ansteuerschaltung und Halbleitermodul - Google Patents

Ansteuerschaltung und Halbleitermodul Download PDF

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Publication number
DE102020116990A1
DE102020116990A1 DE102020116990.6A DE102020116990A DE102020116990A1 DE 102020116990 A1 DE102020116990 A1 DE 102020116990A1 DE 102020116990 A DE102020116990 A DE 102020116990A DE 102020116990 A1 DE102020116990 A1 DE 102020116990A1
Authority
DE
Germany
Prior art keywords
voltage
switching device
gate
drive unit
control circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE102020116990.6A
Other languages
German (de)
English (en)
Inventor
Hiroshi Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE102020116990A1 publication Critical patent/DE102020116990A1/de
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
    • H03K17/163—Soft switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
    • H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H03K17/168—Modifications for eliminating interference voltages or currents in composite switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/602—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/0048—Circuits or arrangements for reducing losses
    • H02M1/0054—Transistor switching losses

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
DE102020116990.6A 2019-07-08 2020-06-29 Ansteuerschaltung und Halbleitermodul Pending DE102020116990A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019127043A JP7238646B2 (ja) 2019-07-08 2019-07-08 駆動回路及び半導体モジュール
JP2019-127043 2019-07-08

Publications (1)

Publication Number Publication Date
DE102020116990A1 true DE102020116990A1 (de) 2021-01-14

Family

ID=74006515

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102020116990.6A Pending DE102020116990A1 (de) 2019-07-08 2020-06-29 Ansteuerschaltung und Halbleitermodul

Country Status (4)

Country Link
US (1) US11463081B2 (https=)
JP (1) JP7238646B2 (https=)
CN (1) CN112202319B (https=)
DE (1) DE102020116990A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116207952B (zh) * 2023-02-27 2025-10-21 中国电子科技集团公司第二十四研究所 一种用于电源管理的mosfet驱动电路

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2854204B2 (ja) * 1991-11-07 1999-02-03 川崎製鉄株式会社 Ａ／ｄコンバータ
US5327131A (en) 1991-11-07 1994-07-05 Kawasaki Steel Corporation Parallel A/D converter having comparator threshold voltages defined by MOS transistor geometries
JP3421507B2 (ja) * 1996-07-05 2003-06-30 三菱電機株式会社 半導体素子の駆動回路
JP3152204B2 (ja) 1998-06-02 2001-04-03 日本電気株式会社 スルーレート出力回路
JP4770064B2 (ja) * 2001-06-05 2011-09-07 富士電機株式会社 Ｉｐｍ回路
JP2004048843A (ja) * 2002-07-09 2004-02-12 Meidensha Corp 電圧駆動型パワー素子のドライブ回路
JP2011211836A (ja) * 2010-03-30 2011-10-20 Panasonic Corp スイッチングデバイス駆動装置および半導体装置
KR101449083B1 (ko) * 2010-05-06 2014-10-13 엘에스산전 주식회사 스위칭 게이트 드라이브
CN103620930B (zh) * 2011-06-09 2016-04-06 三菱电机株式会社 栅极驱动电路
TWI513190B (zh) * 2011-07-22 2015-12-11 Hon Hai Prec Ind Co Ltd 使金氧半導體場效電晶體輸出線性電流的閘極驅動電路
JP2014079086A (ja) * 2012-10-10 2014-05-01 Fuji Electric Co Ltd 電圧駆動型半導体素子の駆動回路
JP6033737B2 (ja) * 2013-05-14 2016-11-30 カルソニックカンセイ株式会社 インバータ制御装置
JPWO2016207956A1 (ja) 2015-06-22 2017-11-16 三菱電機株式会社 駆動回路、半導体装置

Also Published As

Publication number Publication date
JP7238646B2 (ja) 2023-03-14
JP2021013113A (ja) 2021-02-04
US20210013877A1 (en) 2021-01-14
CN112202319B (zh) 2024-05-31
US11463081B2 (en) 2022-10-04
CN112202319A (zh) 2021-01-08

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