JP7216615B2 - Iii-n半導体構造およびiii-n半導体構造の形成方法 - Google Patents
Iii-n半導体構造およびiii-n半導体構造の形成方法 Download PDFInfo
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- JP7216615B2 JP7216615B2 JP2019097624A JP2019097624A JP7216615B2 JP 7216615 B2 JP7216615 B2 JP 7216615B2 JP 2019097624 A JP2019097624 A JP 2019097624A JP 2019097624 A JP2019097624 A JP 2019097624A JP 7216615 B2 JP7216615 B2 JP 7216615B2
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- 239000004065 semiconductor Substances 0.000 title claims description 88
- 238000000034 method Methods 0.000 title claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 93
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 93
- 239000000758 substrate Substances 0.000 claims description 63
- 239000000872 buffer Substances 0.000 claims description 48
- 230000007704 transition Effects 0.000 claims description 40
- 238000011065 in-situ storage Methods 0.000 claims description 26
- 239000012212 insulator Substances 0.000 claims description 21
- 229910002704 AlGaN Inorganic materials 0.000 claims description 18
- 230000006911 nucleation Effects 0.000 claims description 18
- 238000010899 nucleation Methods 0.000 claims description 18
- 230000008859 change Effects 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 225
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 34
- 229910002601 GaN Inorganic materials 0.000 description 33
- 229910017083 AlN Inorganic materials 0.000 description 19
- 239000000203 mixture Substances 0.000 description 14
- 125000004429 atom Chemical group 0.000 description 10
- 239000002131 composite material Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 4
- 238000011066 ex-situ storage Methods 0.000 description 4
- 229910003465 moissanite Inorganic materials 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical compound CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 239000001282 iso-butane Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Description
セミコンダクタ・オン・インシュレータ基板と、
少なくとも第1の超格子ブロックと、前記第1の超格子ブロック上に形成された第2の超格子ブロックとを含む超格子を備えるバッファ構造と、
前記バッファ構造上に配置されたIII-N半導体チャネル層と、を備え、
前記第1の超格子ブロックは、第1の超格子ユニットの繰り返しシーケンスを含み、各第1の超格子ユニットは、AlGaNの層のスタックを含み、前記スタックの隣接する層は、異なるアルミニウム含有量を有し、
前記第2の超格子ブロックは、第2の超格子ユニットの繰り返しシーケンスを含み、各第2の超格子ユニットは、AlGaNの層のスタックを含み、前記スタックの隣接する層は、異なるアルミニウム含有量を有し、
前記第2の超格子ブロックの平均アルミニウム含有量は、前記第1の超格子ブロックの平均アルミニウム含有量より大きい
半導体構造。
前記方法は、
セミコンダクタ・オン・インシュレータ基板上にバッファ構造を形成するステップを含み、
前記バッファ構造を形成するステップは、
前記第1の超格子ブロック上に少なくとも第1の超格子ブロックと第2の超格子ブロックとを含む超格子を形成するステップを含み、
前記方法は、
前記バッファ構造上にIII-N半導体チャネル層をエピタキシャル成長させるステップと、を含み、
前記第1の超格子ブロックは、第1の超格子ユニットの繰り返しシーケンスをエピタキシャル成長させることによって形成され、各第1の超格子ユニットは、AlGaN層のスタックを含み、前記スタックの隣接層は、異なるアルミニウム含有量を有し、
前記第2の超格子ブロックは、第2の超格子ユニットの繰り返しシーケンスをエピタキシャル成長させることによって形成され、各第2の超格子ユニットは、AlGaN層のスタックを含み、前記スタックの隣接層は、異なるアルミニウム含有量を有し、
前記第2の超格子ブロックの平均アルミニウム含有量は、前記第1の超格子ブロックの平均アルミニウム含有量より大きい
方法。
・200nm厚のAlN核形成層210
・50nmのAl0.75GaN下部遷移層220
・超格子230:
・[5nmのAlN/28nmのAl0.15GaN]2層の超格子ユニットの50回の繰り返しによって形成された1.65μm厚の第1の超格子ブロック231(平均アルミニウム含有量AL%=28%に対応)
・[10nmのAlN/28nmのAl0.3GaN]2層の超格子ユニットを40回繰り返すことによって形成された1.5μm厚の第2の超格子ブロック232(平均アルミニウム含有量AL%=48%に対応)
・1μm厚の炭素ドープGaN上部遷移層240
・300nmのGaNチャネル層300
・200nm厚のAlN核形成層210
・50nmのAl0.75GaN下部遷移層220
・超格子230:
・[5nmのAlN/28nmのAl0.15GaN]2層の超格子ユニットの50回の繰り返しによって形成された1.65μm厚の第1の超格子ブロック231(平均アルミニウム含有量AL%=28%に対応)
・[7nmのAlN/28nmのAl0.15GaN]2層の超格子ユニットを15回繰り返して形成された0.5μm厚の第2の超格子ブロック232(平均アルミニウム含有量AL%=32%に対応)
・[4nmのAlN/30nmのAl0.1GaN]2層の超格子ユニットの50回の繰り返しによって形成された1.65μm厚の第3の超格子ブロック233(平均アルミニウム含有量AL%=20.6%に対応)
・[5nmのAlN/30nmのAl0.1GaN]2層の超格子ユニットの15回の繰り返しによって形成された0.5μm厚の第4の超格子ブロック234(平均アルミニウム含有量AL%=22.9%に対応)
・1μm厚の炭素ドープGaN上部遷移層240
・400nmのGaNチャネル層300
Claims (13)
- III-N半導体構造であって、
セミコンダクタ・オン・インシュレータ基板(100)と、
少なくとも第1の超格子ブロック(231)と、前記第1の超格子ブロック(231)上に形成された第2の超格子ブロック(232)とを含む超格子(230)を備えるバッファ構造(200)と、
前記バッファ構造(200)上に配置されたIII-N半導体チャネル層(300)と、を備え、
前記第1の超格子ブロック(231)は、第1の超格子ユニット(231-1,231-2)の繰り返しシーケンスを含み、各第1の超格子ユニット(231-1,231-2)は、AlGaNの層のスタックを含み、前記スタックの隣接する層は、異なるアルミニウム含有量を有し、
前記第2の超格子ブロック(232)は、第2の超格子ユニット(232-1,232-2)の繰り返しシーケンスを含み、各第2の超格子ユニット(232-1,232-2)は、AlGaNの層のスタックを含み、前記スタックの隣接する層は、異なるアルミニウム含有量を有し、
前記第2の超格子ブロック(232)の平均アルミニウム含有量は、前記第1の超格子ブロック(231)の平均アルミニウム含有量より大きく、
前記超格子(230)は、前記第2の超格子ブロック(232)の上に形成され、前記第2の超格子ブロック(232)の平均アルミニウム含有量よりも少ない平均アルミニウム含有量を有する上部超格子ブロック(230U)を含む、
半導体構造。 - 前記バッファ構造(200)の前記超格子(230)は、複数の超格子ブロック(230L,231,232,230U)を含み、前記第1および第2の超格子ブロック(231,232)は、前記超格子(230)の超格子ブロックの隣接対を形成する請求項1に記載の半導体構造。
- 前記超格子(230)は、前記第1の超格子ブロック(231)の下に形成され、前記第1の超格子ブロック(231)の平均アルミニウム含有量よりも大きい平均アルミニウム含有量を有する下部超格子ブロック(230L)を含む請求項1または2に記載の半導体構造。
- 前記超格子(230)は、前記第2の超格子ブロック(232)上に形成された第3の超格子ブロック(233)と、前記第3の超格子ブロック(233)上に形成された第4の超格子(234)ブロックとを含み、
前記第4の超格子ブロック(234)の平均アルミニウム含有量は、前記第3の超格子ブロック(233)の平均アルミニウム含有量よりも大きく、かつ、前記第3の超格子ブロック(233)の平均アルミニウム含有量は、前記第2の超格子ブロック(232)の平均アルミニウム含有量よりも小さい請求項1ないし3のうちいずれか1項に記載の半導体構造。 - 前記セミコンダクタ・オン・インシュレータ基板(100)は、下部ウエハ(110)、上部半導体層(130)、および前記下部ウエハと前記上部半導体層との間の絶縁体層(120)を含み、前記バッファ構造(200)とIII-N半導体チャネル層(300)とを合わせた厚さは、上部半導体層(130)の厚さより大きい請求項1ないし4のうちいずれか1項記載の半導体構造。
- 前記バッファ構造(200)は、前記セミコンダクタ・オン・インシュレータ基板(100)上に形成されたAlN核形成層(210)を含む請求項1ないし5のうちいずれか1項に記載の半導体構造。
- 前記バッファ構造(200)は、(Al)GaNの下部遷移層(220)をさらに備え、前記超格子(230)は、前記下部遷移層(220)上に形成される請求項6に記載の半導体構造。
- 前記バッファ構造(200)は、前記超格子(230)上に形成された(Al)GaNの上部遷移層(240)をさらに備える請求項1ないし7のうちいずれか1項に記載の半導体構造。
- III-N半導体構造を形成するための方法であって、
前記方法は、
セミコンダクタ・オン・インシュレータ基板(100)上にバッファ構造(200)を形成するステップを含み、
前記バッファ構造(200)を形成するステップは、
第1の超格子ブロック(231)上に少なくとも第1の超格子ブロック(231)と第2の超格子ブロック(232)とを含む超格子(230)を形成するステップを含み、
前記方法は、
前記バッファ構造(200)上にIII-N半導体チャネル層(300)をエピタキシャル成長させるステップと、を含み、
前記第1の超格子ブロック(231)は、第1の超格子ユニット(231-1,231-2)の繰り返しシーケンスをエピタキシャル成長させることによって形成され、各第1の超格子ユニット(231-1,231-2)は、AlGaN層のスタックを含み、前記スタックの隣接層は、異なるアルミニウム含有量を有し、
前記第2の超格子ブロック(232)は、第2の超格子ユニット(232-1,232-2)の繰り返しシーケンスをエピタキシャル成長させることによって形成され、各第2の超格子ユニット(232-1,232-2)は、AlGaN層のスタックを含み、前記スタックの隣接層は、異なるアルミニウム含有量を有し、
前記第2の超格子ブロック(232)の平均アルミニウム含有量は、前記第1の超格子ブロック(231)の平均アルミニウム含有量より大きく、
前記超格子(230)を形成するステップは、前記第2の超格子ブロック(232)上に前記第2の超格子ブロック(232)の平均アルミニウム含有量よりも少ない平均アルミニウム含有量を有する上部超格子ブロック(230U)を形成するステップを含む、
方法。 - 前記超格子(230)を形成するステップは、複数の超格子ブロック(230L,231,232,230U)を形成するステップを含み、前記第1および第2の超格子ブロック(231,232)は、前記超格子(230)の隣接する対を形成するステップを含む請求項9に記載の方法。
- 前記セミコンダクタ・オン・インシュレータ基板(100)は、下部ウエハ(110)と、上部半導体層(130)と、前記下部ウエハと前記上部半導体層との中間にある絶縁体層(120)とを含み、前記バッファ構造(200)および前記III-N半導体チャネル層(300)は、上部半導体層(130)の厚さよりも大きい合計厚さで形成される請求項9または10に記載の方法。
- 前記第2の超格子ブロック(232)のインサイチュ曲率の時間変化率が0以下になるように、前記第2の超格子ブロック(232)を成長させる請求項9ないし11のうちいずれか1項に記載の方法。
- 前記超格子(230)の少なくとも1つの隣接する対の層の間に少なくとも部分的な歪み緩和が生じるように、前記超格子(230)を成長させる請求項9ないし12のうちいずれか1項に記載の方法。
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EP4073831A4 (en) * | 2019-12-09 | 2024-01-10 | Entegris, Inc. | DIFFUSION BARRIERS MADE OF MULTIPLE BARRIER MATERIALS, AND ASSOCIATED ARTICLES AND METHODS |
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US11322647B2 (en) | 2020-05-01 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Buried contact layer for UV emitting device |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011100772A (ja) | 2009-11-04 | 2011-05-19 | Dowa Electronics Materials Co Ltd | Iii族窒化物積層基板 |
JP2011216823A (ja) | 2010-04-02 | 2011-10-27 | Ntt Advanced Technology Corp | 多重構造窒化物半導体構造 |
JP2014036231A (ja) | 2012-08-09 | 2014-02-24 | Samsung Electronics Co Ltd | 半導体素子の製造方法 |
JP2014132607A (ja) | 2013-01-04 | 2014-07-17 | Dowa Electronics Materials Co Ltd | Iii族窒化物エピタキシャル基板およびその製造方法 |
WO2015015800A1 (ja) | 2013-07-30 | 2015-02-05 | 住友化学株式会社 | 半導体基板および半導体基板の製造方法 |
JP2016100508A (ja) | 2014-11-25 | 2016-05-30 | サンケン電気株式会社 | エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法 |
US20170170283A1 (en) | 2015-12-10 | 2017-06-15 | IQE, plc | Iii-nitride structures grown on silicon substrates with increased compressive stress |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4734786B2 (ja) * | 2001-07-04 | 2011-07-27 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体基板、及びその製造方法 |
JP4106516B2 (ja) * | 2001-10-10 | 2008-06-25 | 日亜化学工業株式会社 | 窒化物半導体基板の成長方法 |
JP4601950B2 (ja) * | 2003-12-26 | 2010-12-22 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子 |
US7547925B2 (en) | 2005-11-14 | 2009-06-16 | Palo Alto Research Center Incorporated | Superlattice strain relief layer for semiconductor devices |
CN100555660C (zh) * | 2006-09-01 | 2009-10-28 | 中国科学院半导体研究所 | 宽带隙氮化镓基异质结场效应晶体管结构及制作方法 |
CN101515543B (zh) * | 2008-02-20 | 2010-08-25 | 中国科学院半导体研究所 | 在硅衬底上生长的氮化镓薄膜结构及其生长方法 |
US8698127B2 (en) | 2010-01-08 | 2014-04-15 | Sensor Electronic Technology, Inc. | Superlattice structure and method for making the same |
JP5706102B2 (ja) * | 2010-05-07 | 2015-04-22 | ローム株式会社 | 窒化物半導体素子 |
DE102010056409A1 (de) * | 2010-12-26 | 2012-06-28 | Azzurro Semiconductors Ag | Gruppe-III-Nitrid basierte Schichtenfolge, Halbleiterbauelement, umfassend eine Gruppe-III-Nitrid basierte Schichtenfolge und Verfahren zur Herstellung |
JP5665676B2 (ja) * | 2011-07-11 | 2015-02-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物エピタキシャル基板およびその製造方法 |
JP5514920B2 (ja) * | 2012-01-13 | 2014-06-04 | Dowaエレクトロニクス株式会社 | Iii族窒化物エピタキシャル基板および該基板を用いた深紫外発光素子 |
US9165766B2 (en) * | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
CN102569571B (zh) * | 2012-03-06 | 2015-06-24 | 华灿光电股份有限公司 | 半导体发光二极管及其制造方法 |
US10164082B2 (en) | 2012-05-04 | 2018-12-25 | Stc.Unm | Growth of cubic crystalline phase structure on silicon substrates and devices comprising the cubic crystalline phase structure |
US9233844B2 (en) | 2012-06-27 | 2016-01-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Graded aluminum—gallium—nitride and superlattice buffer layer for III-V nitride layer on silicon substrate |
EP3708699A1 (en) * | 2013-02-15 | 2020-09-16 | AZUR SPACE Solar Power GmbH | P-d0ping of group-i i i-nitride buffer later structure on a heterosubstrate |
CN103346068A (zh) * | 2013-07-11 | 2013-10-09 | 中国科学院半导体研究所 | 高In组分AlInN薄膜的制备方法 |
US9660133B2 (en) * | 2013-09-23 | 2017-05-23 | Sensor Electronic Technology, Inc. | Group III nitride heterostructure for optoelectronic device |
JP2015115429A (ja) * | 2013-12-11 | 2015-06-22 | シャープ株式会社 | 窒化物半導体エピタキシャル基板および窒化物半導体デバイス |
CN103806104A (zh) * | 2014-02-19 | 2014-05-21 | 中国科学院半导体研究所 | 一种高Al组分AlGaN薄膜的制备方法 |
JP6229609B2 (ja) * | 2014-07-18 | 2017-11-15 | 豊田合成株式会社 | Iii族窒化物半導体発光素子の製造方法 |
CN104600109A (zh) * | 2015-01-07 | 2015-05-06 | 中山大学 | 一种高耐压氮化物半导体外延结构及其生长方法 |
DE112016002435T5 (de) | 2015-05-29 | 2018-02-22 | Analog Devices Inc. | Galliumnitridapparat mit einer an Fangstellen reichen Region |
TWI552948B (zh) | 2015-06-05 | 2016-10-11 | 環球晶圓股份有限公司 | 半導體元件 |
CN105225931B (zh) * | 2015-09-30 | 2018-12-21 | 中国电子科技集团公司第四十八研究所 | AlN模板及其生长方法、基于AlN模板的Si基GaN外延结构及其生长方法 |
TW201717424A (zh) * | 2015-11-12 | 2017-05-16 | Lextar Electronics Corp | 紫外光發光二極體 |
CN107068750B (zh) * | 2016-12-31 | 2024-04-19 | 华南理工大学 | 一种基于Si衬底的GaN基高压HEMT器件外延结构及其制造方法 |
US10580879B2 (en) * | 2016-12-31 | 2020-03-03 | South China University Of Technology | Enhancement-mode GaN-based HEMT device on Si substrate and manufacturing method thereof |
US10192959B2 (en) * | 2017-01-23 | 2019-01-29 | Imec Vzw | III-N based substrate for power electronic devices and method for manufacturing same |
-
2018
- 2018-05-28 EP EP18174617.3A patent/EP3576132A1/en active Pending
-
2019
- 2019-05-22 TW TW108117717A patent/TWI759601B/zh active
- 2019-05-24 JP JP2019097624A patent/JP7216615B2/ja active Active
- 2019-05-27 CN CN201910445529.7A patent/CN110544716B/zh active Active
- 2019-05-28 US US16/423,274 patent/US10818491B2/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011100772A (ja) | 2009-11-04 | 2011-05-19 | Dowa Electronics Materials Co Ltd | Iii族窒化物積層基板 |
JP2011216823A (ja) | 2010-04-02 | 2011-10-27 | Ntt Advanced Technology Corp | 多重構造窒化物半導体構造 |
JP2014036231A (ja) | 2012-08-09 | 2014-02-24 | Samsung Electronics Co Ltd | 半導体素子の製造方法 |
JP2014132607A (ja) | 2013-01-04 | 2014-07-17 | Dowa Electronics Materials Co Ltd | Iii族窒化物エピタキシャル基板およびその製造方法 |
WO2015015800A1 (ja) | 2013-07-30 | 2015-02-05 | 住友化学株式会社 | 半導体基板および半導体基板の製造方法 |
JP2016100508A (ja) | 2014-11-25 | 2016-05-30 | サンケン電気株式会社 | エピタキシャルウェーハ、半導体素子、エピタキシャルウェーハの製造方法、並びに、半導体素子の製造方法 |
US20170170283A1 (en) | 2015-12-10 | 2017-06-15 | IQE, plc | Iii-nitride structures grown on silicon substrates with increased compressive stress |
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