JP5836158B2 - 歪吸収中間層遷移モジュールを有するiii族窒化物半導体構造 - Google Patents
歪吸収中間層遷移モジュールを有するiii族窒化物半導体構造 Download PDFInfo
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 15
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Description
本出願は、2011年3月3日に出願された「III-Nitride Material Interlayer Structures」というタイトルの継続中の米国仮出願第61/449046号の利益および優先権を主張し、当該仮出願を完全に援用する。
米国特許第7,759,699号
米国特許第7,745,849号
米国特許第7,456,442号
米国特許第7,382,001号
米国特許第7,339,205号
米国特許第7,112,830号
米国特許第6,849,882号
米国特許第6,649,287号
米国特許第6,617,060号
米国特許第5,192,987号
米国特許出願第13/021,437号
米国特許出願第13/017,970号
米国特許出願第12/928,946号
米国特許出願第12/653,097号
米国特許出願第12/587,964号
米国特許出願第12/211,120号
米国特許出願第12/195,801号
米国特許出願第11/857,113号
米国特許出願第11/531,508号
2011年2月28日に出願された米国特許仮出願第61/447,479号。
本明細書で用いられるように、用語「III族窒化物材料」または「III族窒化物」は、化合物半導体をいい、この化合物半導体には、(i)窒素および、アルミニウム(Al)、ガリウム(Ga)、インジウム(In)およびホウ素(B)を含む少なくとも1つのIII族元素、ならびに(ii)それらの合金のいずれかに限定されないが、例えば、窒化アルミニウムガリウム(AlxGa(1-x)N)、窒化インジウムガリウム(InyGa(1-y)N)、窒化アルミニウムインジウムガリウム(AlxInyGa(1-x-y)N)、窒化ガリウムヒ素リン(GaAsaPb N(1-a-b))、窒化アルミニウムインジウムガリウムヒ素リン(AlxInyGa(1-x-y)AsaPb N(1-a-b))等の合金が含まれる。III族窒化物材料は、一般に、Ga極性、N極性、半極性または無極性の結晶配向が含まれる(これらには限定されない)何らかの極性にも言及する。III族窒化物材料は、ウルツ鉱型(Wurtzitic)、ジンクブレンデ型(Zincblende)または混合多形のいずれかを含んでいてもよく、単結晶(single-crystal)、単結晶(monocrystalline)、多結晶、またはアモルファス構造を含んでいてもよい。
本開示は、少なくとも1つの図に関連して実質的に示されて及び/又は記載されているように、および特許請求の範囲により完全に記載されているように、歪吸収中間層遷移モジュールを有するIII族窒化物半導体構造を対象とする。
以下の説明には、本開示における実施に関する具体的な情報を含む。当業者は、本明細書で具体的に説明した方法とは異なる方法で本開示を実施可能であることを認識する。本出願の図およびそれに対応する詳細な説明は、単に例示的な実施を対象としている。別記しない限り、図中の類似のまたは対応する要素は、類似のまたは対応する参照番号により示すことがある。さらに、本出願の図面は、一般に、正確な縮尺ではなく、実際の相対寸法に対応させることを意図したものではない。
Claims (15)
- 基板;
前記基板の上方の第一遷移本体であって、第一表面において第一の格子パラメータを有し、前記第一表面とは反対側の第二表面において前記第一の格子パラメータよりも高い第二の格子パラメータを有する第一遷移本体;
前記第一遷移本体の前記第二表面に重層しかつ隣接する下表面においてより小さい格子パラメータを有し、上表面においてより大きい格子パラメータを有する第二遷移本体であって、
前記第二遷移本体が、第一遷移モジュールおよび第二遷移モジュールを有し、前記第一および第二遷移モジュールの各々がAl x Ga (1−x) Nで形成された下方の中間層、Al y Ga (1−y) Nで形成された中間の中間層、およびAl z Ga (1−z) Nで形成された上方の中間層を有し、ここで、X>Y>Zであり、前記第二遷移モジュールの前記下方の中間層が、前記第一遷移モジュールの前記上方の中間層上に直接形成されている、第二遷移本体;および、
前記第二遷移本体の上方のIII族窒化物半導体層;
を有する半導体構造であって、
前記第一遷移本体および前記第二遷移本体が、前記半導体構造の歪みを減少させる、半導体構造。 - 前記基板が、非III族窒化物基板である、請求項1に記載の半導体構造。
- 前記第一表面が、前記第二表面のガリウム濃度よりも低いガリウム濃度を有する、請求項1に記載の半導体構造。
- 前記第二遷移本体が、前記下表面において、前記上表面におけるアルミニウム濃度よりも高いアルミニウム濃度を有する、請求項1に記載の半導体構造。
- 前記第一遷移モジュールの前記下方の中間層が、前記第一遷移本体の前記第二表面に重層する前記下表面を形成する、請求項1に記載の半導体構造。
- 非III族窒化物基板;
歪吸収層;
前記歪吸収層の上方の第一遷移本体であって、第一表面において第一の格子パラメータを有し、前記第一表面とは反対側の第二表面において前記第一の格子パラメータよりも高い第二の格子パラメータを有する第一遷移本体;
前記第一遷移本体の前記第二表面に重層しかつ隣接する下表面においてより小さい格子パラメータを有し、上表面においてより大きい格子パラメータを有する第二遷移本体であって、
前記第二遷移本体が、第一遷移モジュールおよび第二遷移モジュールを有し、前記第一および第二遷移モジュールの各々がAl x Ga (1−x) Nで形成された下方の中間層、Al y Ga (1−y) Nで形成された中間の中間層、およびAl z Ga (1−z) Nで形成された上方の中間層を有し、ここで、X>Y>Zであり、前記第二遷移モジュールの前記下方の中間層が、前記第一遷移モジュールの前記上方の中間層上に直接形成されている、第二遷移本体;および、
前記第二遷移本体の上方のIII族窒化物半導体層;
を有する半導体構造であって、
前記第一遷移本体および前記第二遷移本体が、前記半導体構造の歪みを減少させる、半導体構造。 - 前記歪吸収層が、窒化ケイ素系歪吸収層である、請求項6に記載の半導体構造。
- 前記第一表面が、前記第二表面のガリウム濃度よりも低いガリウム濃度を有する、請求項6に記載の半導体構造。
- 前記第二遷移本体が、前記下表面において、前記上表面におけるアルミニウム濃度よりも高いアルミニウム濃度を有する、請求項6に記載の半導体構造。
- 前記第一遷移モジュールの前記下方の中間層が、前記第一遷移本体の前記第二表面に重層する前記下表面を形成する、請求項6に記載の半導体構造。
- 前記第一遷移本体と前記歪吸収層との間に形成された窒化アルミニウム本体をさらに有する、請求項6に記載の半導体構造。
- 前記非III族窒化物基板が、IV族基板である、請求項6に記載の半導体構造。
- 基板;
前記基板の上方の第一傾斜遷移本体であって、第一表面において第一の格子パラメータを有し、前記第一表面とは反対側の第二表面において前記第一の格子パラメータよりも高い第二の格子パラメータを有する第一傾斜遷移本体;
前記第一傾斜遷移本体の前記第二表面に重層しかつ隣接する下表面においてより小さい格子パラメータを有し、上表面においてより大きい格子パラメータを有する第二遷移本体であって、
Al x Ga (1−x) Nで形成された下方の中間層、Al y Ga (1−y) Nで形成された中間の中間層、およびAl z Ga (1−z) Nで形成された上方の中間層(ここで、X>Y>Zである)を各々有する少なくとも2つの遷移モジュールを有し、前記第二遷移モジュールの前記下方の中間層が、前記第一遷移モジュールの前記上方の中間層上に直接形成されている、第二遷移本体;および、
前記第二遷移本体の上方のIII族窒化物半導体層;
を有する半導体構造であって、
前記第一傾斜遷移本体および前記第二遷移本体が、前記半導体構造の歪みを減少させる、半導体構造。 - 前記少なくとも2つの遷移モジュールが、実質的に同じである、請求項13に記載の半導体構造。
- 前記少なくとも2つの遷移モジュールが異なる、請求項13に記載の半導体構造。
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