JP7212890B2 - 酸化物膜の成膜方法、半導体装置の製造方法、及び、酸化物膜の成膜装置 - Google Patents
酸化物膜の成膜方法、半導体装置の製造方法、及び、酸化物膜の成膜装置 Download PDFInfo
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Description
12 :基板
20 :加熱炉
26 :基板ステージ
27 :ヒータ
28 :排出管
30 :ミスト供給路
32 :ガス供給路
34 :搬送ガス供給路
35 :第2搬送ガス
36 :酸素ガス供給路
37 :酸素ガス
40 :貯留槽
42 :溶液
46 :溶液ミスト
48 :超音波振動子
50 :搬送ガス供給路
52 :第1搬送ガス
Claims (11)
- 半導体の酸化ガリウム膜の成膜方法であって、
前記酸化ガリウム膜の材料が溶解した溶液のミストを酸素の濃度が21vol%以下の搬送ガスとともに基板の表面に供給することによって、前記基板の前記表面に前記酸化ガリウム膜をエピタキシャル成長させる工程と、
前記酸化ガリウム膜をエピタキシャル成長させた後に、前記酸化ガリウム膜を水蒸気と水のミストの少なくとも一方を含む流体に曝す工程、
を有し、
前記酸化ガリウム膜を前記流体に曝す前記工程では、前記酸化ガリウム膜と前記基板を加熱する、
成膜方法。 - 前記搬送ガスが酸素を含まない、請求項1の成膜方法。
- 前記酸化ガリウム膜をエピタキシャル成長させる前記工程では、前記基板を第1温度に加熱し、
前記酸化ガリウム膜を前記流体に曝す前記工程では、前記基板を前記第1温度よりも高い第2温度に加熱する、請求項1または2の成膜方法。 - 前記酸化ガリウム膜を前記流体に曝す前記工程において、前記酸化ガリウム膜の結晶性が向上する、請求項1~3のいずれか一項の成膜方法。
- 前記溶液が、前記酸化ガリウム膜中でドーパントとして機能する原子を含むドーパント材料を含んでおり、
前記酸化ガリウム膜をエピタキシャル成長させる前記工程で、前記ドーパントを含む前記酸化ガリウム膜をエピタキシャル成長させる、
請求項4の成膜方法。 - 前記ドーパントが、前記酸化ガリウム膜中の酸素サイトに置換可能である、請求項5の成膜方法。
- 前記ドーパントが、17族または15族である、請求項5または6の成膜方法。
- 前記ドーパントが、アクセプタである、請求項5~7のいずれか一項の成膜方法。
- 前記流体が、水蒸気を含み、
前記流体中における水蒸気の分圧が、大気中における水蒸気の分圧よりも高い、請求項1~8のいずれか一項の成膜方法。 - 半導体の酸化ガリウム膜を有する半導体装置の製造方法であって、
前記酸化ガリウム膜の材料が溶解した溶液のミストを酸素の濃度が21vol%以下の搬送ガスとともに基板の表面に供給することによって、前記基板の前記表面に前記酸化ガリウム膜をエピタキシャル成長させる工程と、
前記酸化ガリウム膜をエピタキシャル成長させた後に、前記酸化ガリウム膜を水蒸気と水のミストの少なくとも一方を含む流体に曝す工程、
を有し、
前記酸化ガリウム膜を前記流体に曝す前記工程では、前記酸化ガリウム膜と前記基板を加熱する、
製造方法。 - 半導体の酸化ガリウム膜の成膜装置であって、
前記酸化ガリウム膜の材料が溶解した溶液のミストを酸素の濃度が21vol%以下の搬送ガスとともに供給するミスト供給装置と、
水蒸気と水のミストの少なくとも一方を含む流体を供給する流体供給装置と、
前記ミスト供給装置と前記流体供給装置を制御する制御装置、
を有しており、
前記制御装置が、
前記ミスト供給装置から前記ミストを前記搬送ガスとともに基板の表面に供給することによって、前記基板の前記表面に前記酸化ガリウム膜をエピタキシャル成長させる工程と、
前記酸化ガリウム膜をエピタキシャル成長させた後に、前記流体供給装置から前記酸化ガリウム膜に前記流体を供給することによって、前記酸化ガリウム膜を前記流体に曝す工程、
を実施し、
前記酸化ガリウム膜を前記流体に曝す前記工程では、前記酸化ガリウム膜と前記基板を加熱する、
成膜装置。
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JP2019105364A JP7212890B2 (ja) | 2019-06-05 | 2019-06-05 | 酸化物膜の成膜方法、半導体装置の製造方法、及び、酸化物膜の成膜装置 |
CN202010502177.7A CN112048759A (zh) | 2019-06-05 | 2020-06-04 | 氧化膜的成膜方法、半导体装置的制造方法及氧化膜的成膜装置 |
US16/892,789 US11373864B2 (en) | 2019-06-05 | 2020-06-04 | Method of forming oxide film, method of manufacturing semiconductor device, and apparatus configured to form oxide film |
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JP7514478B2 (ja) | 2020-12-04 | 2024-07-11 | 株式会社デンソー | ウエハ処理装置及びウエハ処理方法 |
TW202235663A (zh) * | 2021-03-02 | 2022-09-16 | 日商信越化學工業股份有限公司 | 製膜方法、製膜裝置及積層體 |
CN117836466A (zh) * | 2022-02-04 | 2024-04-05 | 株式会社村田制作所 | 雾化cvd成膜装置和成膜方法 |
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JP2015070248A (ja) | 2013-10-01 | 2015-04-13 | 株式会社Flosfia | 酸化物薄膜及びその製造方法 |
JP2016146442A (ja) | 2015-01-29 | 2016-08-12 | 株式会社Flosfia | 成膜装置および成膜方法 |
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JP2013140201A (ja) * | 2011-12-28 | 2013-07-18 | Ricoh Opt Ind Co Ltd | 金属酸化膜による光学薄膜の形成方法および光学素子 |
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