JP7210446B2 - パワー半導体モジュール - Google Patents

パワー半導体モジュール Download PDF

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Publication number
JP7210446B2
JP7210446B2 JP2019528107A JP2019528107A JP7210446B2 JP 7210446 B2 JP7210446 B2 JP 7210446B2 JP 2019528107 A JP2019528107 A JP 2019528107A JP 2019528107 A JP2019528107 A JP 2019528107A JP 7210446 B2 JP7210446 B2 JP 7210446B2
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Japan
Prior art keywords
power semiconductor
power
semiconductor module
base plate
devices
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JP2019528107A
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English (en)
Japanese (ja)
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JP2020501353A (ja
JP2020501353A5 (https=
Inventor
ハルトマン，サミュエル
トリューセル，ドミニク
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Energy Ltd
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Hitachi Energy Switzerland AG
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Publication of JP2020501353A5 publication Critical patent/JP2020501353A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Inverter Devices (AREA)
  • Rectifiers (AREA)
JP2019528107A 2016-11-25 2017-11-27 パワー半導体モジュール Active JP7210446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16200714.0 2016-11-25
EP16200714 2016-11-25
PCT/EP2017/080529 WO2018096147A1 (en) 2016-11-25 2017-11-27 Power semiconductor module

Publications (3)

Publication Number Publication Date
JP2020501353A JP2020501353A (ja) 2020-01-16
JP2020501353A5 JP2020501353A5 (https=) 2020-12-03
JP7210446B2 true JP7210446B2 (ja) 2023-01-23

Family

ID=57406127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019528107A Active JP7210446B2 (ja) 2016-11-25 2017-11-27 パワー半導体モジュール

Country Status (5)

Country Link
US (1) US11127671B2 (https=)
EP (1) EP3545552B1 (https=)
JP (1) JP7210446B2 (https=)
CN (1) CN109997223B (https=)
WO (1) WO2018096147A1 (https=)

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* Cited by examiner, † Cited by third party
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CN109216339A (zh) * 2018-10-31 2019-01-15 广东美的制冷设备有限公司 高集成功率模块和电器
FR3088138B1 (fr) * 2018-11-07 2022-01-21 Inst Vedecom Module electronique de puissance
EP3772750A1 (en) * 2019-08-07 2021-02-10 Infineon Technologies AG Semiconductor module arrangement
US11569815B1 (en) * 2019-10-15 2023-01-31 Zhong Chen High electric-thermal performance and high-power density power module
EP3859774B1 (en) * 2020-01-29 2022-05-04 Hitachi Energy Switzerland AG Power semiconductor module
CN111682021B (zh) * 2020-06-17 2024-06-04 上海临港电力电子研究有限公司 功率半导体模块衬底及其所应用的功率半导体设备
CN112635407A (zh) * 2020-11-06 2021-04-09 赛晶亚太半导体科技(浙江)有限公司 一种igbt芯片排布结构
EP4095900B1 (en) * 2021-05-28 2024-01-31 Hitachi Energy Ltd Clamping element and method for producing a power semiconductor device
CN113834527B (zh) * 2021-09-18 2024-09-27 重庆大学 一种压接型功率半导体结构及其内部压力在线测量方法
DE102022205514A1 (de) 2022-05-31 2023-11-30 Vitesco Technologies GmbH Halbbrückenmodul mit parallel geführten Versorgungs-Zuleitungen verbunden mit isolierten Anschlussflächen zwischen zwei Streifenabschnitten sowie mit einem der Streifenabschnitte einer Leiterbahnschicht
CN117423672B (zh) * 2023-10-08 2025-04-01 西安电子科技大学 一种均流的碳化硅功率模块

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234722A (ja) 2006-02-28 2007-09-13 Toyota Industries Corp 半導体装置
JP2011097053A (ja) 2009-10-30 2011-05-12 General Electric Co <Ge> インダクタンスを低減した電力モジュール組立体
JP2013012560A (ja) 2011-06-29 2013-01-17 Hitachi Ltd パワー半導体モジュール
JP2013021107A (ja) 2011-07-11 2013-01-31 Hitachi Ltd 半導体パワーモジュール
WO2016084622A1 (ja) 2014-11-28 2016-06-02 富士電機株式会社 半導体装置

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DE3937045A1 (de) * 1989-11-07 1991-05-08 Abb Ixys Semiconductor Gmbh Leistungshalbleitermodul
JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
US6054765A (en) * 1998-04-27 2000-04-25 Delco Electronics Corporation Parallel dual switch module
US6845017B2 (en) * 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
US7505294B2 (en) * 2003-05-16 2009-03-17 Continental Automotive Systems Us, Inc. Tri-level inverter
US6987670B2 (en) * 2003-05-16 2006-01-17 Ballard Power Systems Corporation Dual power module power system architecture
US20060290689A1 (en) * 2005-06-24 2006-12-28 William Grant Semiconductor half-bridge module with low inductance
US8675379B2 (en) * 2011-08-08 2014-03-18 General Electric Company Power converting apparatus having improved electro-thermal characteristics
IL228896A (en) * 2012-10-15 2017-01-31 Wix Com Ltd A system that supports direct links and search engines to create websites that integrate third-party applications and components
KR101890752B1 (ko) * 2012-11-01 2018-08-22 삼성전자 주식회사 균일한 병렬 스위치 특성을 갖는 파워모듈용 기판 및 이를 포함하는 파워모듈
KR102034717B1 (ko) * 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
CN106537586B (zh) 2014-05-15 2020-09-11 克利公司 高电流、低切换损耗SiC功率模块
WO2015176985A1 (en) * 2014-05-20 2015-11-26 Abb Technology Ag Semiconductor power module with low stray inductance
JP6166701B2 (ja) * 2014-08-22 2017-07-19 株式会社東芝 半導体装置
CN107851634B (zh) * 2015-05-22 2020-06-30 Abb电网瑞士股份公司 功率半导体模块
US10277112B2 (en) * 2015-06-23 2019-04-30 Tm4, Inc. Physical topology for a power converter
US10749443B2 (en) * 2017-01-13 2020-08-18 Cree Fayetteville, Inc. High power multilayer module having low inductance and fast switching for paralleling power devices
EP3613077B1 (en) * 2017-05-02 2020-10-07 ABB Power Grids Switzerland AG Half-bridge module with coaxial arrangement of the dc terminals

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234722A (ja) 2006-02-28 2007-09-13 Toyota Industries Corp 半導体装置
JP2011097053A (ja) 2009-10-30 2011-05-12 General Electric Co <Ge> インダクタンスを低減した電力モジュール組立体
JP2013012560A (ja) 2011-06-29 2013-01-17 Hitachi Ltd パワー半導体モジュール
JP2013021107A (ja) 2011-07-11 2013-01-31 Hitachi Ltd 半導体パワーモジュール
WO2016084622A1 (ja) 2014-11-28 2016-06-02 富士電機株式会社 半導体装置

Also Published As

Publication number Publication date
CN109997223B (zh) 2023-06-30
EP3545552B1 (en) 2024-10-30
US11127671B2 (en) 2021-09-21
JP2020501353A (ja) 2020-01-16
WO2018096147A1 (en) 2018-05-31
CN109997223A (zh) 2019-07-09
US20190279927A1 (en) 2019-09-12
EP3545552A1 (en) 2019-10-02

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