CN109997223B - 功率半导体模块 - Google Patents

功率半导体模块 Download PDF

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Publication number
CN109997223B
CN109997223B CN201780073003.XA CN201780073003A CN109997223B CN 109997223 B CN109997223 B CN 109997223B CN 201780073003 A CN201780073003 A CN 201780073003A CN 109997223 B CN109997223 B CN 109997223B
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China
Prior art keywords
power semiconductor
substrate
power
device region
semiconductor module
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CN201780073003.XA
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Chinese (zh)
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CN109997223A (zh
Inventor
S.哈特曼
D.特吕塞尔
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Hitachi Energy Co ltd
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Hitachi Energy Switzerland AG
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Inverter Devices (AREA)
  • Rectifiers (AREA)
CN201780073003.XA 2016-11-25 2017-11-27 功率半导体模块 Active CN109997223B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP16200714.0 2016-11-25
EP16200714 2016-11-25
PCT/EP2017/080529 WO2018096147A1 (en) 2016-11-25 2017-11-27 Power semiconductor module

Publications (2)

Publication Number Publication Date
CN109997223A CN109997223A (zh) 2019-07-09
CN109997223B true CN109997223B (zh) 2023-06-30

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CN201780073003.XA Active CN109997223B (zh) 2016-11-25 2017-11-27 功率半导体模块

Country Status (5)

Country Link
US (1) US11127671B2 (https=)
EP (1) EP3545552B1 (https=)
JP (1) JP7210446B2 (https=)
CN (1) CN109997223B (https=)
WO (1) WO2018096147A1 (https=)

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CN109216339A (zh) * 2018-10-31 2019-01-15 广东美的制冷设备有限公司 高集成功率模块和电器
FR3088138B1 (fr) * 2018-11-07 2022-01-21 Inst Vedecom Module electronique de puissance
EP3772750A1 (en) * 2019-08-07 2021-02-10 Infineon Technologies AG Semiconductor module arrangement
US11569815B1 (en) * 2019-10-15 2023-01-31 Zhong Chen High electric-thermal performance and high-power density power module
EP3859774B1 (en) * 2020-01-29 2022-05-04 Hitachi Energy Switzerland AG Power semiconductor module
CN111682021B (zh) * 2020-06-17 2024-06-04 上海临港电力电子研究有限公司 功率半导体模块衬底及其所应用的功率半导体设备
CN112635407A (zh) * 2020-11-06 2021-04-09 赛晶亚太半导体科技(浙江)有限公司 一种igbt芯片排布结构
EP4095900B1 (en) * 2021-05-28 2024-01-31 Hitachi Energy Ltd Clamping element and method for producing a power semiconductor device
CN113834527B (zh) * 2021-09-18 2024-09-27 重庆大学 一种压接型功率半导体结构及其内部压力在线测量方法
DE102022205514A1 (de) 2022-05-31 2023-11-30 Vitesco Technologies GmbH Halbbrückenmodul mit parallel geführten Versorgungs-Zuleitungen verbunden mit isolierten Anschlussflächen zwischen zwei Streifenabschnitten sowie mit einem der Streifenabschnitte einer Leiterbahnschicht
CN117423672B (zh) * 2023-10-08 2025-04-01 西安电子科技大学 一种均流的碳化硅功率模块

Citations (1)

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CN102110680A (zh) * 2009-10-30 2011-06-29 通用电气公司 具有降低电感的功率模块组件

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JP3053298B2 (ja) * 1992-08-19 2000-06-19 株式会社東芝 半導体装置
US6054765A (en) * 1998-04-27 2000-04-25 Delco Electronics Corporation Parallel dual switch module
US6845017B2 (en) * 2000-09-20 2005-01-18 Ballard Power Systems Corporation Substrate-level DC bus design to reduce module inductance
US7505294B2 (en) * 2003-05-16 2009-03-17 Continental Automotive Systems Us, Inc. Tri-level inverter
US6987670B2 (en) * 2003-05-16 2006-01-17 Ballard Power Systems Corporation Dual power module power system architecture
US20060290689A1 (en) * 2005-06-24 2006-12-28 William Grant Semiconductor half-bridge module with low inductance
JP4513770B2 (ja) * 2006-02-28 2010-07-28 株式会社豊田自動織機 半導体装置
JP5637944B2 (ja) * 2011-06-29 2014-12-10 株式会社 日立パワーデバイス パワー半導体モジュール
JP5555206B2 (ja) * 2011-07-11 2014-07-23 株式会社 日立パワーデバイス 半導体パワーモジュール
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KR102034717B1 (ko) * 2013-02-07 2019-10-21 삼성전자주식회사 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈
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EP3613077B1 (en) * 2017-05-02 2020-10-07 ABB Power Grids Switzerland AG Half-bridge module with coaxial arrangement of the dc terminals

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Also Published As

Publication number Publication date
EP3545552B1 (en) 2024-10-30
JP7210446B2 (ja) 2023-01-23
US11127671B2 (en) 2021-09-21
JP2020501353A (ja) 2020-01-16
WO2018096147A1 (en) 2018-05-31
CN109997223A (zh) 2019-07-09
US20190279927A1 (en) 2019-09-12
EP3545552A1 (en) 2019-10-02

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