JP7203141B2 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
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- JP7203141B2 JP7203141B2 JP2021068795A JP2021068795A JP7203141B2 JP 7203141 B2 JP7203141 B2 JP 7203141B2 JP 2021068795 A JP2021068795 A JP 2021068795A JP 2021068795 A JP2021068795 A JP 2021068795A JP 7203141 B2 JP7203141 B2 JP 7203141B2
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49565—Side rails of the lead frame, e.g. with perforations, sprocket holes
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
- H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0263—High current adaptations, e.g. printed high current conductors or using auxiliary non-printed means; Fine and coarse circuit patterns on one circuit board
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10166—Transistor
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Dc-Dc Converters (AREA)
Description
図1~図3は、実施の形態1にかかる電力変換装置の構成について説明するためのものであり、図1は電力変換装置を回路基板側から見たときの平面図(図1A)と、図1AのA-A線における断面図(図1B)である。また、図2は電力変換装置を構成する半導体スイッチング素子の斜視図(図2A)、および端子延伸部材の斜視図(図2B)と変形例の端子延伸部材の斜視図(図2C)、図3は図1AのB-B線に対応する回路基板部分の断面図である。そして、図4は変形例にかかる電力変換装置の断面図で図1AのA-A線に対応する。
本変形例では、半導体スイッチング素子の駆動に起因するノイズ対策について説明する。本変形例にかかる電力変換装置1は、図4に示すように、回路基板3に対し、実装面3fmの反対側の面側に間隔をあけて金属製の平坦な遮蔽板9を設けるようにした。
上記実施の形態1では、個別の半導体スイッチング素子を筐体に固定する例を示したがこれに限ることはない。本実施の形態2では4つの半導体スイッチング素子を一体成型したモジュールを用いた例について説明する。図5は、実施の形態2にかかる電力変換装置の構成について説明するためのものであり、電力変換装置を回路基板側から見たときの平面図(図5A)と図5AのC-C線における断面図(図5B)である。なお、半導体スイッチング素子の一体化、および一体化に伴う端子の位置変化等を除けば、実施の形態1と同様であり、実施の形態1で用いた図2A、図2B、図3を援用し、同様部分の説明は省略する。
Claims (10)
- それぞれ板状をなし、対をなして電力変換のためのブリッジを形成する半導体スイッチング素子、
前記半導体スイッチング素子の主面の一方が固定面に固定された筐体、
前記半導体スイッチング素子を駆動する駆動回路が実装され、前記固定面に対して間隔をあけて対向配置された回路基板、
前記回路基板の前記固定面に対する対向面に配置された挿入ガイド、および
前記駆動回路を形成するパルストランスの高さに対応した長さを有し、一端が前記半導体スイッチング素子の一側部から突き出たリード端子に接合され、他端が前記挿入ガイドに向かって延びる長尺状の端子延伸部材を備え、
前記パルストランスは、前記半導体スイッチング素子の主面の他方に対向するように、前記対向面に配置されていることを特徴とする電力変換装置。 - 前記端子延伸部材には、前記挿入ガイドに向かって延びる中間部分に、厚み方向に変形する変形部が形成されていることを特徴とする請求項1に記載の電力変換装置。
- それぞれ板状をなし、対をなして電力変換のためのブリッジを形成する半導体スイッチング素子、
前記半導体スイッチング素子の主面の一方が固定面に固定された筐体、
前記半導体スイッチング素子を駆動する駆動回路が実装され、前記固定面に対して間隔をあけて対向配置された回路基板、および
前記回路基板の前記固定面に対する対向面に配置された挿入ガイドを備え、
前記半導体スイッチング素子の一側部から突き出たリード端子は、前記駆動回路を形成するパルストランスの高さに対応した長さを有して前記挿入ガイドに向かって延び、
前記パルストランスは、前記半導体スイッチング素子の主面の他方に対向するように、前記対向面に配置されていることを特徴とする電力変換装置。 - 前記リード端子には、前記挿入ガイドに向かって延びる中間部分に、厚み方向に変形する変形部が形成されていることを特徴とする請求項3に記載の電力変換装置。
- 前記半導体スイッチング素子は、前記一側部の反対側の側部を互いに対向させて一列に並んで配置され、
前記パルストランスは、前記駆動回路に電気的に接続される入力端子が設けられた面と、前記半導体スイッチング素子に電気的に接続される出力端子が設けられた面が、前記一列の並びと直交する方向においてそれぞれ反対側を向くように前記回路基板に配置されていることを特徴とする請求項1から4のいずれか1項に記載の電力変換装置。 - 前記固定面には、2対の前記半導体スイッチング素子が二列に並んで配置され、
前記2対に対応し、前記回路基板には、前記パルストランスとして2つのパルストランスが、前記一列の並びと直交する方向に並んで配置されていることを特徴とする請求項5に記載の電力変換装置。 - 一端部が前記筐体に食い込み、他端部が前記主面の他方から前記回路基板に向かって突出して、前記半導体スイッチング素子を前記固定面に固定する固定用部材を備え、
前記2つのパルストランスは、前記入力端子が設けられた面が互いに対向するように配置されていることを特徴とする請求項6に記載の電力変換装置。 - 前記回路基板は、厚み方向に複数の層が積層された多層基板であり、
前記入力端子に電気的に接続された配線パターンは、前記厚み方向に沿った投影像が、前記出力端子に電気的に接続された配線パターンに対して離れるように配置されていることを特徴とする請求項5から7のいずれか1項に記載の電力変換装置。 - 前記対向面の裏側に配置された遮蔽板を備えたことを特徴とする請求項1から8のいずれか1項に記載の電力変換装置。
- 複数の前記半導体スイッチング素子が、モジュールとして一体化していることを特徴とする請求項1から9のいずれか1項に記載の電力変換装置。
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JP2021068795A JP7203141B2 (ja) | 2021-04-15 | 2021-04-15 | 電力変換装置 |
US17/564,313 US12074513B2 (en) | 2021-04-15 | 2021-12-29 | Power conversion device |
CN202210336826.XA CN115224021A (zh) | 2021-04-15 | 2022-03-31 | 功率转换装置 |
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JP2021068795A JP7203141B2 (ja) | 2021-04-15 | 2021-04-15 | 電力変換装置 |
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JP7203141B2 true JP7203141B2 (ja) | 2023-01-12 |
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2021
- 2021-04-15 JP JP2021068795A patent/JP7203141B2/ja active Active
- 2021-12-29 US US17/564,313 patent/US12074513B2/en active Active
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- 2022-03-31 CN CN202210336826.XA patent/CN115224021A/zh active Pending
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JP2000208686A (ja) | 1999-01-11 | 2000-07-28 | Fuji Electric Co Ltd | パワ―モジュ―ルのパッケ―ジ構造 |
JP2004172422A (ja) | 2002-11-20 | 2004-06-17 | Fujitsu Media Device Kk | 立体構造基板及びその製造方法 |
JP2005123328A (ja) | 2003-10-15 | 2005-05-12 | Denso Corp | 半導体装置 |
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JP2014039384A (ja) | 2012-08-14 | 2014-02-27 | Hitachi Automotive Systems Ltd | Dc−dcコンバータ装置 |
JP2015043683A (ja) | 2013-07-24 | 2015-03-05 | 株式会社デンソー | 電源装置 |
WO2018131385A1 (ja) | 2017-01-12 | 2018-07-19 | 株式会社村田製作所 | Dc/dcコンバータモジュール |
JP2020047658A (ja) | 2018-09-14 | 2020-03-26 | 富士電機株式会社 | 半導体モジュール |
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CN115224021A (zh) | 2022-10-21 |
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