JP7185689B2 - 電子モジュール用のベースプレートの製造方法 - Google Patents
電子モジュール用のベースプレートの製造方法 Download PDFInfo
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- JP7185689B2 JP7185689B2 JP2020524047A JP2020524047A JP7185689B2 JP 7185689 B2 JP7185689 B2 JP 7185689B2 JP 2020524047 A JP2020524047 A JP 2020524047A JP 2020524047 A JP2020524047 A JP 2020524047A JP 7185689 B2 JP7185689 B2 JP 7185689B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000010410 layer Substances 0.000 claims description 50
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 30
- 239000002131 composite material Substances 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 239000012790 adhesive layer Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 8
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 229910000510 noble metal Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 239000010970 precious metal Substances 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 5
- 239000010439 graphite Substances 0.000 description 5
- 238000005554 pickling Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 229910003465 moissanite Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000013528 metallic particle Substances 0.000 description 2
- 229910000962 AlSiC Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- -1 silver or gold Chemical compound 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Description
加させる利点を有し、ニッケル層中の水素堆積の問題を回避する。したがって、PVDによって堆積されたニッケル層は、容易にはんだ付け可能であるため、銅または貴金属に基づく層はもはや必要ではない。したがって、本発明によれば、はんだ付け可能な層は、ニッケル層、または銅もしくは貴金属をベースとする層とすることができる。銅または貴金属をベースとする層は、ニッケル層上に、接着剤層上に、または直接プレート上に堆積させることができる。別の利点は、マスクを使用することによって、堆積が実際に必要とされる領域に堆積を容易に限定することができることである。
Claims (6)
- アルミニウムをベースとする金属成分と非金属成分とを含む複合材料のプレートが、はんだ付け可能な層が堆積されてなり、前記はんだ付け可能な層はPVDによって堆積され、前記はんだ付け可能な層が堆積される前に、PVDによって前記プレート上に接着剤層が堆積され、前記はんだ付け可能な層は、前記接着剤層と前記はんだ付可能な層との間で、PVDによって堆積されたニッケルをベースとする中間層上に堆積された銅または貴金属をベースとする層であり、前記接着剤層は、チタン、タングステン、モリブデン、および/またはクロムをベースとする層であることを特徴とする、電子モジュール用のベースプレートの製造方法。
- 前記はんだ付け可能な層は、ニッケル層、または銅もしくは貴金属をベースとする層であることを特徴とする請求項1に記載の電子モジュール用のベースプレートの製造方法。
- 複合材料の非金属成分がシリコンカーバイドまたはカーボンであることを特徴とする、先に述べた上記請求項1又は2に記載の電子モジュール用のベースプレートの製造方法。
- 前記接着剤層の堆積の前に前記プレートをイオンエッチングすることを特徴とする、上記請求項1乃至3のいずれかに記載の電子モジュール用のベースプレートの製造方法。
- マスクを用いて堆積する場合、プレートの領域を省略可能としたことができることを特徴とする、上記請求項1乃至4のいずれかに記載の電子モジュール用のベースプレートの製造方法。
- ベースプレートを備えた電子モジュールであって、上記請求項1乃至5のいずれかに記載の方法で製造され、前記ベースプレートのはんだ付け可能層にはんだ付けされた電子部品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017126590.2A DE102017126590A1 (de) | 2017-11-13 | 2017-11-13 | Verfahren zum Herstellen einer Bodenplatte für ein Elektronikmodul |
DE102017126590.2 | 2017-11-13 | ||
PCT/EP2018/078424 WO2019091734A1 (de) | 2017-11-13 | 2018-10-17 | Verfahren zum herstellen einer bodenplatte für ein elektronikmodul |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021502692A JP2021502692A (ja) | 2021-01-28 |
JP7185689B2 true JP7185689B2 (ja) | 2022-12-07 |
Family
ID=63915039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020524047A Active JP7185689B2 (ja) | 2017-11-13 | 2018-10-17 | 電子モジュール用のベースプレートの製造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US20200270738A1 (ja) |
EP (1) | EP3710613A1 (ja) |
JP (1) | JP7185689B2 (ja) |
KR (1) | KR20200087131A (ja) |
CN (1) | CN111344430B (ja) |
CA (1) | CA3080428A1 (ja) |
DE (1) | DE102017126590A1 (ja) |
IL (1) | IL274056A (ja) |
WO (1) | WO2019091734A1 (ja) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009129983A (ja) | 2007-11-20 | 2009-06-11 | Toyota Central R&D Labs Inc | 接合体及びその製造方法、並びにパワー半導体モジュール及びその製造方法 |
JP2011023475A (ja) | 2009-07-14 | 2011-02-03 | Mitsubishi Materials Corp | 絶縁基板、絶縁回路基板、半導体装置、絶縁基板の製造方法及び絶縁回路基板の製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2750436A1 (de) * | 1977-11-11 | 1979-05-17 | Degussa | Verfahren zur herstellung hartloetfaehiger metallschichten auf keramik |
FR2585730B1 (fr) * | 1985-08-01 | 1987-10-09 | Centre Nat Rech Scient | Procede de depot de metaux en couche mince sur un substrat non metallique, avec depot intermediaire d'hydrures par pulverisation cathodique reactive |
US4964962A (en) * | 1988-10-08 | 1990-10-23 | Matsushita Electric Works, Ltd. | Method for forming conducting metal layer on inorganic substrate |
JPH0796702B2 (ja) * | 1988-10-08 | 1995-10-18 | 松下電工株式会社 | 無機質基板のメタライゼーションの方法 |
JPH09104969A (ja) * | 1995-08-09 | 1997-04-22 | Matsushita Electric Ind Co Ltd | 導体膜およびその形成方法 |
DE10235277B4 (de) * | 2002-08-02 | 2005-12-29 | Leonhardy Gmbh | Verfahren zur Befestigung von nicht lötbaren Komponenten auf elektronischen Leiterplatten |
EP1524336A1 (de) * | 2003-10-18 | 2005-04-20 | Aluminal Oberflächtentechnik GmbH & Co. KG | Mit einer Aluminium-/Magnesium-Legierung beschichtete Werkstücke |
JP2006083442A (ja) * | 2004-09-17 | 2006-03-30 | Seiko Epson Corp | 成膜方法、電子デバイス、及び電子機器 |
KR100807948B1 (ko) * | 2007-02-28 | 2008-02-28 | 삼성전자주식회사 | 저저항 금속 배선 형성방법, 금속 배선 구조 및 이를이용하는 표시장치 |
EP2197253A1 (en) * | 2008-12-12 | 2010-06-16 | Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO | Method for electric circuit deposition |
KR101074550B1 (ko) * | 2009-12-29 | 2011-10-17 | 엘에스산전 주식회사 | 파워 모듈 및 그의 제조 방법 |
-
2017
- 2017-11-13 DE DE102017126590.2A patent/DE102017126590A1/de not_active Ceased
-
2018
- 2018-10-17 CN CN201880073334.8A patent/CN111344430B/zh not_active Expired - Fee Related
- 2018-10-17 KR KR1020207011813A patent/KR20200087131A/ko unknown
- 2018-10-17 JP JP2020524047A patent/JP7185689B2/ja active Active
- 2018-10-17 CA CA3080428A patent/CA3080428A1/en not_active Abandoned
- 2018-10-17 EP EP18789391.2A patent/EP3710613A1/de not_active Withdrawn
- 2018-10-17 WO PCT/EP2018/078424 patent/WO2019091734A1/de unknown
-
2020
- 2020-04-19 IL IL274056A patent/IL274056A/en unknown
- 2020-05-11 US US15/929,581 patent/US20200270738A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009129983A (ja) | 2007-11-20 | 2009-06-11 | Toyota Central R&D Labs Inc | 接合体及びその製造方法、並びにパワー半導体モジュール及びその製造方法 |
JP2011023475A (ja) | 2009-07-14 | 2011-02-03 | Mitsubishi Materials Corp | 絶縁基板、絶縁回路基板、半導体装置、絶縁基板の製造方法及び絶縁回路基板の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2019091734A1 (de) | 2019-05-16 |
CN111344430B (zh) | 2022-03-15 |
JP2021502692A (ja) | 2021-01-28 |
CA3080428A1 (en) | 2019-05-16 |
IL274056A (en) | 2020-06-30 |
DE102017126590A1 (de) | 2019-05-16 |
KR20200087131A (ko) | 2020-07-20 |
EP3710613A1 (de) | 2020-09-23 |
CN111344430A (zh) | 2020-06-26 |
US20200270738A1 (en) | 2020-08-27 |
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