CN111344430A - 用于电子模块的基板的制造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims description 16
- 239000002131 composite material Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 14
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- 238000000576 coating method Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
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- 229910052799 carbon Inorganic materials 0.000 claims description 4
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- 239000011733 molybdenum Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
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- 229910052751 metal Inorganic materials 0.000 abstract description 4
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- 238000009713 electroplating Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
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- 229910000679 solder Inorganic materials 0.000 description 2
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- 229910000962 AlSiC Inorganic materials 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Physical Vapour Deposition (AREA)
- Laminated Bodies (AREA)
Abstract
本发明涉及一种用于电子模块的基板的生产方法，其中使用复合材料制成基板，其中该基板包含基于铝的金属组分和非金属组分并涂覆有可焊层。根据本发明，通过PVD沉积载体层和覆盖层。
Description
技术领域
本发明涉及用于电子模块的基板的制造方法。
背景技术
电子模块的基板在导热性、有利的热膨胀系数以及机械稳定性和使重量最低的这些方面的需求增加，已经使得越来越多地使用复合材料制造基板，这些复合材料包含基于铝的金属成分和包含诸如SiC或石墨的非金属成分。这些复合材料为颗粒复合材料的形式。颗粒复合材料有时也称为基质复合材料。
除铝之外，通常用于电子模块的基板的复合材料，还包含非金属组分，如碳化硅或石墨，这些材料难以焊接。因此，在制造用于电子模块的基板时，由这种复合材料制成的板涂覆有基于镍的中间层和基于铜或贵金属的易于焊接的覆盖层。
为此，首先用含氟的酸洗介质处理复合材料板的表面，以从板的表面去除碳化硅或其它非金属组分。然后在剩余的金属表面上湿化学沉积镍层。在另一电镀工艺步骤中，首先用镍层涂覆，然后用基于铜或贵金属的覆盖层涂覆该镍层。
酸洗步骤虽然费力，但是这是必须的，因为电镀沉积的镍层对复合材料的碳化硅或其它非金属组分粘附性差。尽可能完全地除去复合材料表面上的非金属颗粒需要相对长时间将其暴露于侵蚀性酸洗介质。因此，获得镍层良好粘附性的代价是更长的耗时且更加费力的制造步骤。另一个问题是，镍层在电镀过程中可能储存氢气，形成孔和不均匀的层，以及在随后的焊接过程中产生气孔。
发明内容
本发明的目的是提出一种在电子模块基板的生产中提高涂层质量和节约成本的方法。
该目的通过具有权利要求1中所限定特征的方法来实现。本发明有利的改进方案为从属权利要求的主题。
具体实施方式
在本发明的电子模块的基板的制造方法中，通过物理气相沉积(PVD)涂覆由复合材料制成的板，该复合材料包含基于铝的金属成分和非金属成分。这具有提高处理速度的优点，能够节约成本，并且避免镍层中的氢沉积的问题。因此，通过PVD沉积的镍层易于焊接，不再需要基于铜或贵金属的层。因此，根据本发明，可焊层可以是镍层，或者基于铜或贵金属的层。基于铜或贵金属的层可以沉积在镍层、粘合层上或直接沉积在板上。另一个优点是，通过使用掩模，涂层可以容易地被限制在实际需要涂层的区域。
出乎意料地，通过使用PVD可以获得均匀的封闭层，并且其层厚度比使用湿化学和电镀涂覆方法时更薄。因此，优选沉积在板上的所有层厚度的总和仅5μm或更小，例如3μm或更小，特别是0.5μm至1.5μm。较薄的层能够更快地生产，从而进一步节省成本。
在本发明的一个有利的改进中，在沉积可焊层之前，通过PVD将例如基于钛、钨、钼和/或铬的粘合层沉积在板上。可焊层可以直接沉积到粘合层上，或者沉积到粘合层和可焊层之间的中间层上，例如基于镍的中间层。这具有的优点是，由此可以改善单层或多层的粘附性。基于钛、钨、钼和/或铬的层粘附到铝以及板的非金属组分(例如SiC或碳，特别是石墨)。因此不再需要费力的酸洗步骤以从板的表面去除非金属颗粒。
本发明还涉及一种具有通过本发明方法制造的基板的电子模块，以及焊接到基板覆盖层上的电子元件。例如，这些元件可以包含晶体管，特别是绝缘栅双极晶体管(IGBT)。
本发明的进一步细节和优点借助于下述的实施例的示例体现：
在本发明用于电子模块的基板的制造中，由颗粒复合材料制成的板可以首先进行湿化学预处理，在处理中该板被清洗和脱脂，该颗粒复合材料包含基于铝的金属成分和基于例如SiC或碳(例如石墨、石墨烯或C-纳米管)的非金属成分。作为进一步的预处理步骤，可以通过离子蚀刻处理板表面。
然后通过PVD将基于钛、钨、钼或铬的粘合层沉积到板上。然后，通过PVD将基于镍的中间层沉积到结合层上，之后通过PVD将基于铜或贵金属(例如银或金)的覆盖层沉积到中间层上。当通过PVD沉积各层时，可以使用掩模以便在涂覆过程中忽略板的特定区域。
优选粘合层的厚度小于1μm，例如0.05μm至0.5μm，特别是0.05μm至0.2μm。中间层应该比粘合层厚。优选中间层的厚度为2μm或更小，例如0.5μm至1.5μm。优选覆盖层的厚度小于1μm，例如0.05μm至0.5μm。
板的复合材料可以是，例如AlSiC，特别是AlSiC-9。AlSiC-9含有37％体积比的铝和63％体积比的SiC。复合材料的另一种可能性是AlC，特别是具有小于30％碳重量比的石墨组分的AlC。
Claims (9)
1.用于电子模块的基板的制造方法，其中，用可焊层涂覆复合材料板，所述复合材料板包含非金属组分和基于铝的金属组分，其特征在于，所述可焊层通过PVD沉积。
2.根据权利要求1所述的方法，其特征在于，所述可焊层是镍层，或者基于铜或贵金属的层。
3.根据前述权利要求之一所述的方法，其特征在于，所述可焊层是基于铜或贵金属的层，所述基于铜或贵金属的层通过PVD沉积到基于镍的中间层上。
4.根据前述权利要求之一所述的方法，其特征在于，在沉积所述可焊层之前，通过PVD将粘合层沉积到所述板上。
5.根据权利要求4所述的方法，其特征在于，所述粘合层是基于钛、钨、钼和/或铬的层。
6.根据前述权利要求中任一项所述的方法，其特征在于，所述复合材料的非金属组分是碳化硅或碳。
7.根据前述权利要求中任一项所述的方法，其特征在于，在涂覆工艺之前对所述板进行离子蚀刻。
8.根据前述权利要求中任一项所述的方法，其特征在于，当借助于掩模进行涂覆时，所述板的特定区域能够被忽略。
9.一种电子模块，具有基板和电子部件，所述基板是利用根据前述权利要求中任一项所述的方法制造的，所述电子部件焊接到所述基板的可焊层上。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102017126590.2 | 2017-11-13 | ||
| DE102017126590.2A DE102017126590A1 (de) | 2017-11-13 | 2017-11-13 | Verfahren zum Herstellen einer Bodenplatte für ein Elektronikmodul |
| PCT/EP2018/078424 WO2019091734A1 (de) | 2017-11-13 | 2018-10-17 | Verfahren zum herstellen einer bodenplatte für ein elektronikmodul |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111344430A true CN111344430A (zh) | 2020-06-26 |
| CN111344430B CN111344430B (zh) | 2022-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201880073334.8A Expired - Fee Related CN111344430B (zh) | 2017-11-13 | 2018-10-17 | 用于电子模块的基板的制造方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US20200270738A1 (zh) |
| EP (1) | EP3710613A1 (zh) |
| JP (1) | JP7185689B2 (zh) |
| KR (1) | KR20200087131A (zh) |
| CN (1) | CN111344430B (zh) |
| CA (1) | CA3080428A1 (zh) |
| DE (1) | DE102017126590A1 (zh) |
| IL (1) | IL274056A (zh) |
| WO (1) | WO2019091734A1 (zh) |
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| DE3933713A1 (de) * | 1988-10-08 | 1990-04-12 | Matsushita Electric Works Ltd | Verfahren zur bildung einer leitenden metallschicht auf einem anorganischen substrat |
| DE10235277A1 (de) * | 2002-08-02 | 2004-02-19 | Leonhardy Gmbh | Verfahren zur Herstellung einer Befestigung von nicht lötbaren Komponenten auf elektronischen Leiterplatten |
| CN1871375A (zh) * | 2003-10-18 | 2006-11-29 | 阿鲁米纳表面技术有限及两合公司 | 涂覆有铝/镁合金的工件 |
| KR20110076286A (ko) * | 2009-12-29 | 2011-07-06 | 엘에스산전 주식회사 | 파워 모듈 및 그의 제조 방법 |
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| US20130299450A1 (en) * | 2007-02-28 | 2013-11-14 | Samsung Display Co., Ltd. | Method of forming low-resistance metal pattern, patterned metal structure, and display devices using the same |
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| DE2750436A1 (de) * | 1977-11-11 | 1979-05-17 | Degussa | Verfahren zur herstellung hartloetfaehiger metallschichten auf keramik |
| FR2585730B1 (fr) * | 1985-08-01 | 1987-10-09 | Centre Nat Rech Scient | Procede de depot de metaux en couche mince sur un substrat non metallique, avec depot intermediaire d'hydrures par pulverisation cathodique reactive |
| JPH0796702B2 (ja) * | 1988-10-08 | 1995-10-18 | 松下電工株式会社 | 無機質基板のメタライゼーションの方法 |
| JPH09104969A (ja) * | 1995-08-09 | 1997-04-22 | Matsushita Electric Ind Co Ltd | 導体膜およびその形成方法 |
| JP2006083442A (ja) * | 2004-09-17 | 2006-03-30 | Seiko Epson Corp | 成膜方法、電子デバイス、及び電子機器 |
| JP2009129983A (ja) | 2007-11-20 | 2009-06-11 | Toyota Central R&D Labs Inc | 接合体及びその製造方法、並びにパワー半導体モジュール及びその製造方法 |
| JP5526632B2 (ja) | 2009-07-14 | 2014-06-18 | 三菱マテリアル株式会社 | 絶縁基板、絶縁回路基板、半導体装置、絶縁基板の製造方法及び絶縁回路基板の製造方法 |
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2017
- 2017-11-13 DE DE102017126590.2A patent/DE102017126590A1/de not_active Ceased
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2018
- 2018-10-17 CN CN201880073334.8A patent/CN111344430B/zh not_active Expired - Fee Related
- 2018-10-17 CA CA3080428A patent/CA3080428A1/en not_active Abandoned
- 2018-10-17 JP JP2020524047A patent/JP7185689B2/ja active Active
- 2018-10-17 KR KR1020207011813A patent/KR20200087131A/ko unknown
- 2018-10-17 WO PCT/EP2018/078424 patent/WO2019091734A1/de unknown
- 2018-10-17 EP EP18789391.2A patent/EP3710613A1/de not_active Withdrawn
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2020
- 2020-04-19 IL IL274056A patent/IL274056A/en unknown
- 2020-05-11 US US15/929,581 patent/US20200270738A1/en not_active Abandoned
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| JP7185689B2 (ja) | 2022-12-07 |
| WO2019091734A1 (de) | 2019-05-16 |
| CA3080428A1 (en) | 2019-05-16 |
| CN111344430B (zh) | 2022-03-15 |
| JP2021502692A (ja) | 2021-01-28 |
| EP3710613A1 (de) | 2020-09-23 |
| IL274056A (en) | 2020-06-30 |
| US20200270738A1 (en) | 2020-08-27 |
| DE102017126590A1 (de) | 2019-05-16 |
| KR20200087131A (ko) | 2020-07-20 |
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