JP7158373B2 - 裏面半導体成長 - Google Patents

裏面半導体成長 Download PDF

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JP7158373B2
JP7158373B2 JP2019506348A JP2019506348A JP7158373B2 JP 7158373 B2 JP7158373 B2 JP 7158373B2 JP 2019506348 A JP2019506348 A JP 2019506348A JP 2019506348 A JP2019506348 A JP 2019506348A JP 7158373 B2 JP7158373 B2 JP 7158373B2
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source
drain regions
backside
layer
drain
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JP2019525478A5 (enExample
JP2019525478A (ja
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シナン・ゴクテペリ
リチャード・ハモンド
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クアルコム，インコーポレイテッド
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    • H10D62/82—Heterojunctions
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
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    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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    • H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
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    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
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    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
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    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
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    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
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  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2019506348A 2016-08-11 2017-07-12 裏面半導体成長 Active JP7158373B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/234,889 US9780210B1 (en) 2016-08-11 2016-08-11 Backside semiconductor growth
US15/234,889 2016-08-11
PCT/US2017/041755 WO2018031175A1 (en) 2016-08-11 2017-07-12 Backside semiconductor growth

Publications (3)

Publication Number Publication Date
JP2019525478A JP2019525478A (ja) 2019-09-05
JP2019525478A5 JP2019525478A5 (enExample) 2020-08-06
JP7158373B2 true JP7158373B2 (ja) 2022-10-21

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US (1) US9780210B1 (enExample)
EP (1) EP3497715B8 (enExample)
JP (1) JP7158373B2 (enExample)
KR (1) KR102505236B1 (enExample)
CN (1) CN109643691B (enExample)
BR (1) BR112019002343B1 (enExample)
CA (1) CA3030289C (enExample)
WO (1) WO2018031175A1 (enExample)

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DE102018106266B4 (de) 2017-06-30 2024-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren zu ihrer herstellung
US10431664B2 (en) * 2017-06-30 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and methods thereof
US10439565B2 (en) 2017-09-27 2019-10-08 Qualcomm Incorporated Low parasitic capacitance low noise amplifier
KR102019354B1 (ko) 2017-11-03 2019-09-09 삼성전자주식회사 안테나 모듈
US11869890B2 (en) 2017-12-26 2024-01-09 Intel Corporation Stacked transistors with contact last
US11430814B2 (en) 2018-03-05 2022-08-30 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
US10580903B2 (en) 2018-03-13 2020-03-03 Psemi Corporation Semiconductor-on-insulator transistor with improved breakdown characteristics
CN110504240B (zh) * 2018-05-16 2021-08-13 联华电子股份有限公司 半导体元件及其制造方法
US20190371891A1 (en) * 2018-06-01 2019-12-05 Qualcomm Incorporated Bulk layer transfer based switch with backside silicidation
US10680086B2 (en) * 2018-06-18 2020-06-09 Qualcomm Incorporated Radio frequency silicon-on-insulator integrated heterojunction bipolar transistor
US10573674B2 (en) 2018-07-19 2020-02-25 Psemi Corporation SLT integrated circuit capacitor structure and methods
US10672806B2 (en) 2018-07-19 2020-06-02 Psemi Corporation High-Q integrated circuit inductor structure and methods
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