JP2019525478A5 - - Google Patents
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- Publication number
- JP2019525478A5 JP2019525478A5 JP2019506348A JP2019506348A JP2019525478A5 JP 2019525478 A5 JP2019525478 A5 JP 2019525478A5 JP 2019506348 A JP2019506348 A JP 2019506348A JP 2019506348 A JP2019506348 A JP 2019506348A JP 2019525478 A5 JP2019525478 A5 JP 2019525478A5
- Authority
- JP
- Japan
- Prior art keywords
- source
- raised
- transistor
- layer
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000000034 method Methods 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 claims 7
- 210000000746 body region Anatomy 0.000 claims 6
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 239000003989 dielectric material Substances 0.000 claims 3
- 239000004020 conductor Substances 0.000 claims 2
- 230000007547 defect Effects 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 125000002057 carboxymethyl group Chemical group [H]OC(=O)C([H])([H])[*] 0.000 claims 1
- 230000006698 induction Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/234,889 US9780210B1 (en) | 2016-08-11 | 2016-08-11 | Backside semiconductor growth |
| US15/234,889 | 2016-08-11 | ||
| PCT/US2017/041755 WO2018031175A1 (en) | 2016-08-11 | 2017-07-12 | Backside semiconductor growth |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2019525478A JP2019525478A (ja) | 2019-09-05 |
| JP2019525478A5 true JP2019525478A5 (enExample) | 2020-08-06 |
| JP7158373B2 JP7158373B2 (ja) | 2022-10-21 |
Family
ID=59485418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019506348A Active JP7158373B2 (ja) | 2016-08-11 | 2017-07-12 | 裏面半導体成長 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9780210B1 (enExample) |
| EP (1) | EP3497715B8 (enExample) |
| JP (1) | JP7158373B2 (enExample) |
| KR (1) | KR102505236B1 (enExample) |
| CN (1) | CN109643691B (enExample) |
| BR (1) | BR112019002343B1 (enExample) |
| CA (1) | CA3030289C (enExample) |
| WO (1) | WO2018031175A1 (enExample) |
Families Citing this family (50)
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| DE112015006959T5 (de) | 2015-09-24 | 2018-06-07 | Intel Corporation | Verfahren zum bilden rückseitiger selbstausgerichteter durchkontaktierungen und dadurch gebildete strukturen |
| WO2017171842A1 (en) | 2016-04-01 | 2017-10-05 | Intel Corporation | Transistor cells including a deep via lined with a dielectric material |
| US9847293B1 (en) * | 2016-08-18 | 2017-12-19 | Qualcomm Incorporated | Utilization of backside silicidation to form dual side contacted capacitor |
| US10872820B2 (en) | 2016-08-26 | 2020-12-22 | Intel Corporation | Integrated circuit structures |
| DE102018106266B4 (de) | 2017-06-30 | 2024-07-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung und verfahren zu ihrer herstellung |
| US10431664B2 (en) * | 2017-06-30 | 2019-10-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gate structure and methods thereof |
| US10439565B2 (en) | 2017-09-27 | 2019-10-08 | Qualcomm Incorporated | Low parasitic capacitance low noise amplifier |
| KR102019354B1 (ko) | 2017-11-03 | 2019-09-09 | 삼성전자주식회사 | 안테나 모듈 |
| US11869890B2 (en) | 2017-12-26 | 2024-01-09 | Intel Corporation | Stacked transistors with contact last |
| US11430814B2 (en) | 2018-03-05 | 2022-08-30 | Intel Corporation | Metallization structures for stacked device connectivity and their methods of fabrication |
| US10580903B2 (en) | 2018-03-13 | 2020-03-03 | Psemi Corporation | Semiconductor-on-insulator transistor with improved breakdown characteristics |
| CN110504240B (zh) * | 2018-05-16 | 2021-08-13 | 联华电子股份有限公司 | 半导体元件及其制造方法 |
| US20190371891A1 (en) * | 2018-06-01 | 2019-12-05 | Qualcomm Incorporated | Bulk layer transfer based switch with backside silicidation |
| US10680086B2 (en) * | 2018-06-18 | 2020-06-09 | Qualcomm Incorporated | Radio frequency silicon-on-insulator integrated heterojunction bipolar transistor |
| US10573674B2 (en) | 2018-07-19 | 2020-02-25 | Psemi Corporation | SLT integrated circuit capacitor structure and methods |
| US10672806B2 (en) | 2018-07-19 | 2020-06-02 | Psemi Corporation | High-Q integrated circuit inductor structure and methods |
| US10658386B2 (en) | 2018-07-19 | 2020-05-19 | Psemi Corporation | Thermal extraction of single layer transfer integrated circuits |
| TWI716748B (zh) * | 2018-10-11 | 2021-01-21 | 世界先進積體電路股份有限公司 | 半導體裝置及其製造方法 |
| CN111092086B (zh) * | 2018-10-24 | 2022-04-19 | 世界先进积体电路股份有限公司 | 半导体装置及其制造方法 |
| US11688780B2 (en) | 2019-03-22 | 2023-06-27 | Intel Corporation | Deep source and drain for transistor structures with back-side contact metallization |
| US11296023B2 (en) * | 2019-04-10 | 2022-04-05 | United Microelectronics Corp. | Semiconductor device and method of fabricating the same |
| US11476363B2 (en) | 2019-04-10 | 2022-10-18 | United Microelectronics Corp. | Semiconductor device and method of fabricating the same |
| CN111816710A (zh) * | 2019-04-10 | 2020-10-23 | 联华电子股份有限公司 | 半导体装置 |
| KR102801648B1 (ko) * | 2019-05-21 | 2025-05-02 | 삼성전자주식회사 | 반도체 소자 |
| US10777636B1 (en) | 2019-06-12 | 2020-09-15 | Psemi Corporation | High density IC capacitor structure |
| US11004972B2 (en) * | 2019-06-12 | 2021-05-11 | Globalfoundries Singapore Pte. Ltd. | Semiconductor device having conducting member for electrically coupling gate structure to underlying substrate of SOI structure |
| US11658220B2 (en) * | 2020-04-24 | 2023-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Drain side recess for back-side power rail device |
| TWI787787B (zh) | 2020-04-24 | 2022-12-21 | 台灣積體電路製造股份有限公司 | 半導體電晶體裝置及形成半導體電晶體裝置的方法 |
| DE102021101178B4 (de) | 2020-04-29 | 2024-10-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrierte-schaltkreis-struktur mit rückseitiger dielektrischer schicht mit luftspalt sowie verfahren zu deren herstellung |
| CN114914292A (zh) * | 2020-05-11 | 2022-08-16 | 北京华碳元芯电子科技有限责任公司 | 一种晶体管 |
| DE102020122823B4 (de) | 2020-05-12 | 2022-06-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtungen mit entkopplungskondensatoren |
| US11862561B2 (en) * | 2020-05-28 | 2024-01-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices with backside routing and method of forming same |
| DE102020131611B4 (de) * | 2020-05-28 | 2025-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Halbleitervorrichtung mit luftspalten und verfahren zu deren herstellung |
| DE102021103791A1 (de) | 2020-05-29 | 2021-12-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Silizid-belegter source/drain-bereich und dessen herstellungsverfahren |
| US11563095B2 (en) | 2020-05-29 | 2023-01-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicide-sandwiched source/drain region and method of fabricating same |
| US11626494B2 (en) | 2020-06-17 | 2023-04-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial backside contact |
| US11532713B2 (en) | 2020-06-25 | 2022-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Source/drain contacts and methods of forming same |
| US11557510B2 (en) * | 2020-07-30 | 2023-01-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacers for semiconductor devices including backside power rails |
| US11456209B2 (en) | 2020-07-31 | 2022-09-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Spacers for semiconductor devices including a backside power rails |
| US11482594B2 (en) | 2020-08-27 | 2022-10-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor devices with backside power rail and method thereof |
| US11588050B2 (en) * | 2020-08-31 | 2023-02-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Backside contact |
| US11437379B2 (en) * | 2020-09-18 | 2022-09-06 | Qualcomm Incorporated | Field-effect transistors (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals, and related complementary metal oxide semiconductor (CMOS) circuits |
| US12165973B2 (en) * | 2020-09-30 | 2024-12-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with backside power rail and method for forming the same |
| US12218664B2 (en) | 2020-10-21 | 2025-02-04 | Arm Limited | Backside power supply techniques |
| US11658119B2 (en) * | 2020-10-27 | 2023-05-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside signal interconnection |
| US11967551B2 (en) * | 2021-04-07 | 2024-04-23 | Arm Limited | Standard cell architecture |
| US20220352256A1 (en) * | 2021-04-28 | 2022-11-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Backside memory integration |
| CN115376994B (zh) * | 2021-05-19 | 2025-10-21 | 邱志威 | 晶体管下具有电源连接结构的半导体结构及其制造方法 |
| US12224286B2 (en) | 2021-09-22 | 2025-02-11 | Qualcomm Incorporated | Symmetric dual-sided MOS IC |
| US11935927B2 (en) * | 2021-11-10 | 2024-03-19 | Globalfoundries U.S. Inc. | Bipolar transistor with collector contact |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0483348A (ja) * | 1990-07-26 | 1992-03-17 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| JP3092761B2 (ja) * | 1991-12-02 | 2000-09-25 | キヤノン株式会社 | 画像表示装置及びその製造方法 |
| TW473914B (en) * | 2000-01-12 | 2002-01-21 | Ibm | Buried metal body contact structure and method for fabricating SOI MOSFET devices |
| JP3764401B2 (ja) * | 2002-04-18 | 2006-04-05 | 株式会社東芝 | 半導体装置の製造方法 |
| DE102004033149B4 (de) * | 2004-07-08 | 2006-09-28 | Infineon Technologies Ag | Verfahren zum Herstellen eines Doppel-Gate-Transistors, einer Speicherzelle, eines Vertikaltransistors sowie vergrabenen Wort- bzw. Bitleitungen jeweils unter Verwendung einer vergrabenen Ätzstoppschicht |
| JP4175650B2 (ja) * | 2004-08-26 | 2008-11-05 | シャープ株式会社 | 半導体装置の製造方法 |
| JP2008526041A (ja) * | 2004-12-28 | 2008-07-17 | エヌエックスピー ビー ヴィ | 半導体デバイスの製造方法およびこの方法で製造される半導体デバイス |
| US7816231B2 (en) | 2006-08-29 | 2010-10-19 | International Business Machines Corporation | Device structures including backside contacts, and methods for forming same |
| US7666723B2 (en) * | 2007-02-22 | 2010-02-23 | International Business Machines Corporation | Methods of forming wiring to transistor and related transistor |
| JP2008252068A (ja) * | 2007-03-08 | 2008-10-16 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
| JP5322408B2 (ja) * | 2007-07-17 | 2013-10-23 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
| US7897468B1 (en) * | 2009-09-10 | 2011-03-01 | International Business Machines Corporation | Device having self-aligned double gate formed by backside engineering, and device having super-steep retrograded island |
| US8373228B2 (en) * | 2010-01-14 | 2013-02-12 | GlobalFoundries, Inc. | Semiconductor transistor device structure with back side source/drain contact plugs, and related manufacturing method |
| US8716091B2 (en) | 2010-03-30 | 2014-05-06 | International Business Machines Corporation | Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain |
| US8318574B2 (en) | 2010-07-30 | 2012-11-27 | International Business Machines Corporation | SOI trench DRAM structure with backside strap |
| US8409989B2 (en) * | 2010-11-11 | 2013-04-02 | International Business Machines Corporation | Structure and method to fabricate a body contact |
| US8772874B2 (en) * | 2011-08-24 | 2014-07-08 | International Business Machines Corporation | MOSFET including asymmetric source and drain regions |
| US8895379B2 (en) * | 2012-01-06 | 2014-11-25 | International Business Machines Corporation | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same |
| US9219129B2 (en) * | 2012-05-10 | 2015-12-22 | International Business Machines Corporation | Inverted thin channel mosfet with self-aligned expanded source/drain |
| US9023688B1 (en) * | 2013-06-09 | 2015-05-05 | Monolithic 3D Inc. | Method of processing a semiconductor device |
| CN104241357A (zh) | 2013-06-18 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | 一种晶体管、集成电路以及集成电路的制造方法 |
| US9165926B2 (en) * | 2013-10-02 | 2015-10-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dynamic threshold MOS and methods of forming the same |
| US9209305B1 (en) * | 2014-06-06 | 2015-12-08 | Stmicroelectronics, Inc. | Backside source-drain contact for integrated circuit transistor devices and method of making same |
| US10396045B2 (en) * | 2015-09-27 | 2019-08-27 | Intel Corporation | Metal on both sides of the transistor integrated with magnetic inductors |
-
2016
- 2016-08-11 US US15/234,889 patent/US9780210B1/en active Active
-
2017
- 2017-07-12 BR BR112019002343-7A patent/BR112019002343B1/pt active IP Right Grant
- 2017-07-12 WO PCT/US2017/041755 patent/WO2018031175A1/en not_active Ceased
- 2017-07-12 CA CA3030289A patent/CA3030289C/en active Active
- 2017-07-12 JP JP2019506348A patent/JP7158373B2/ja active Active
- 2017-07-12 CN CN201780049283.0A patent/CN109643691B/zh active Active
- 2017-07-12 EP EP17745908.8A patent/EP3497715B8/en active Active
- 2017-07-12 KR KR1020197003917A patent/KR102505236B1/ko active Active
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