KR102505236B1 - 백사이드 반도체 성장 - Google Patents

백사이드 반도체 성장 Download PDF

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KR102505236B1
KR102505236B1 KR1020197003917A KR20197003917A KR102505236B1 KR 102505236 B1 KR102505236 B1 KR 102505236B1 KR 1020197003917 A KR1020197003917 A KR 1020197003917A KR 20197003917 A KR20197003917 A KR 20197003917A KR 102505236 B1 KR102505236 B1 KR 102505236B1
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backside
source
drain region
transistor
circuit structure
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KR20190036533A (ko
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시난 고크테펠리
리차드 햄몬드
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퀄컴 인코포레이티드
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    • H10D62/82—Heterojunctions
    • H10D62/822—Heterojunctions comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
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    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Geometry (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020197003917A 2016-08-11 2017-07-12 백사이드 반도체 성장 Active KR102505236B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/234,889 US9780210B1 (en) 2016-08-11 2016-08-11 Backside semiconductor growth
US15/234,889 2016-08-11
PCT/US2017/041755 WO2018031175A1 (en) 2016-08-11 2017-07-12 Backside semiconductor growth

Publications (2)

Publication Number Publication Date
KR20190036533A KR20190036533A (ko) 2019-04-04
KR102505236B1 true KR102505236B1 (ko) 2023-03-02

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US (1) US9780210B1 (enExample)
EP (1) EP3497715B8 (enExample)
JP (1) JP7158373B2 (enExample)
KR (1) KR102505236B1 (enExample)
CN (1) CN109643691B (enExample)
BR (1) BR112019002343B1 (enExample)
CA (1) CA3030289C (enExample)
WO (1) WO2018031175A1 (enExample)

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US9847293B1 (en) * 2016-08-18 2017-12-19 Qualcomm Incorporated Utilization of backside silicidation to form dual side contacted capacitor
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DE102018106266B4 (de) 2017-06-30 2024-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren zu ihrer herstellung
US10431664B2 (en) * 2017-06-30 2019-10-01 Taiwan Semiconductor Manufacturing Co., Ltd. Gate structure and methods thereof
US10439565B2 (en) * 2017-09-27 2019-10-08 Qualcomm Incorporated Low parasitic capacitance low noise amplifier
KR102019354B1 (ko) * 2017-11-03 2019-09-09 삼성전자주식회사 안테나 모듈
US11869890B2 (en) 2017-12-26 2024-01-09 Intel Corporation Stacked transistors with contact last
WO2019172879A1 (en) 2018-03-05 2019-09-12 Intel Corporation Metallization structures for stacked device connectivity and their methods of fabrication
US10580903B2 (en) 2018-03-13 2020-03-03 Psemi Corporation Semiconductor-on-insulator transistor with improved breakdown characteristics
CN110504240B (zh) * 2018-05-16 2021-08-13 联华电子股份有限公司 半导体元件及其制造方法
US20190371891A1 (en) * 2018-06-01 2019-12-05 Qualcomm Incorporated Bulk layer transfer based switch with backside silicidation
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