JP2019530218A5 - - Google Patents

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Publication number
JP2019530218A5
JP2019530218A5 JP2019512208A JP2019512208A JP2019530218A5 JP 2019530218 A5 JP2019530218 A5 JP 2019530218A5 JP 2019512208 A JP2019512208 A JP 2019512208A JP 2019512208 A JP2019512208 A JP 2019512208A JP 2019530218 A5 JP2019530218 A5 JP 2019530218A5
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JP
Japan
Prior art keywords
backside
gate
layer
coupled
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2019512208A
Other languages
English (en)
Japanese (ja)
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JP2019530218A (ja
Filing date
Publication date
Priority claimed from US15/257,823 external-priority patent/US9812580B1/en
Application filed filed Critical
Publication of JP2019530218A publication Critical patent/JP2019530218A/ja
Publication of JP2019530218A5 publication Critical patent/JP2019530218A5/ja
Pending legal-status Critical Current

Links

JP2019512208A 2016-09-06 2017-08-03 裏面ボディ接点を有するディープトレンチ能動デバイス Pending JP2019530218A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/257,823 US9812580B1 (en) 2016-09-06 2016-09-06 Deep trench active device with backside body contact
US15/257,823 2016-09-06
PCT/US2017/045349 WO2018048529A1 (en) 2016-09-06 2017-08-03 Deep trench active device with backside body contact

Publications (2)

Publication Number Publication Date
JP2019530218A JP2019530218A (ja) 2019-10-17
JP2019530218A5 true JP2019530218A5 (enExample) 2020-08-20

Family

ID=59684050

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019512208A Pending JP2019530218A (ja) 2016-09-06 2017-08-03 裏面ボディ接点を有するディープトレンチ能動デバイス

Country Status (7)

Country Link
US (1) US9812580B1 (enExample)
EP (1) EP3510636A1 (enExample)
JP (1) JP2019530218A (enExample)
KR (1) KR20190045909A (enExample)
CN (1) CN109791948A (enExample)
BR (1) BR112019003900A2 (enExample)
WO (1) WO2018048529A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110504240B (zh) * 2018-05-16 2021-08-13 联华电子股份有限公司 半导体元件及其制造方法
CN109524355B (zh) * 2018-10-30 2020-11-10 上海集成电路研发中心有限公司 一种半导体器件的结构和形成方法
CN109545785B (zh) * 2018-10-31 2023-01-31 上海集成电路研发中心有限公司 一种半导体器件结构和制备方法
CN109616472B (zh) * 2018-12-14 2022-11-15 上海微阱电子科技有限公司 一种半导体器件结构和形成方法
CN109545802B (zh) * 2018-12-14 2021-01-12 上海微阱电子科技有限公司 一种绝缘体上半导体器件结构和形成方法
CN109923666B (zh) * 2019-01-30 2020-05-26 长江存储科技有限责任公司 具有垂直扩散板的电容器结构
EP3850665B1 (en) * 2019-01-30 2023-11-15 Yangtze Memory Technologies Co., Ltd. Capacitor structure having vertical diffusion plates
EP3853896B1 (en) * 2019-02-18 2024-10-02 Yangtze Memory Technologies Co., Ltd. Method of forming a novel capacitor structure
DE102020122151A1 (de) * 2020-04-28 2021-10-28 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung und verfahren
US11251308B2 (en) 2020-04-28 2022-02-15 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method
US11349004B2 (en) * 2020-04-28 2022-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Backside vias in semiconductor device
US11355410B2 (en) * 2020-04-28 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal dissipation in semiconductor devices
TWI741935B (zh) 2020-04-28 2021-10-01 台灣積體電路製造股份有限公司 半導體元件與其製作方法
DE102020131611B4 (de) * 2020-05-28 2025-03-27 Taiwan Semiconductor Manufacturing Co., Ltd. Halbleitervorrichtung mit luftspalten und verfahren zu deren herstellung
CN120280431B (zh) * 2025-06-04 2025-09-30 长飞先进半导体(武汉)有限公司 半导体器件及制作方法、功率模块、功率转换电路和车辆

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
JP2948018B2 (ja) * 1992-03-17 1999-09-13 三菱電機株式会社 半導体装置およびその製造方法
US5889298A (en) 1993-04-30 1999-03-30 Texas Instruments Incorporated Vertical JFET field effect transistor
JP3884266B2 (ja) * 2001-02-19 2007-02-21 株式会社東芝 半導体メモリ装置及びその製造方法
US6838722B2 (en) 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
JP2003309182A (ja) * 2002-04-17 2003-10-31 Hitachi Ltd 半導体装置の製造方法及び半導体装置
US6861701B2 (en) 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus
JP4869546B2 (ja) * 2003-05-23 2012-02-08 ルネサスエレクトロニクス株式会社 半導体装置
JP2005353657A (ja) * 2004-06-08 2005-12-22 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
DE102005030585B4 (de) * 2005-06-30 2011-07-28 Globalfoundries Inc. Halbleiterbauelement mit einem vertikalen Entkopplungskondensator und Verfahren zu seiner Herstellung
JP2009088241A (ja) * 2007-09-28 2009-04-23 Renesas Technology Corp 半導体装置およびその製造方法
JP5487625B2 (ja) * 2009-01-22 2014-05-07 ソニー株式会社 半導体装置
US8395880B2 (en) * 2010-03-30 2013-03-12 Medtronic, Inc. High density capacitor array patterns
US8735984B2 (en) * 2010-07-06 2014-05-27 Globalfoundries Singapore PTE, LTD. FinFET with novel body contact for multiple Vt applications
US9159825B2 (en) 2010-10-12 2015-10-13 Silanna Semiconductor U.S.A., Inc. Double-sided vertical semiconductor device with thinned substrate
US9496255B2 (en) * 2011-11-16 2016-11-15 Qualcomm Incorporated Stacked CMOS chipset having an insulating layer and a secondary layer and method of forming same
US8735993B2 (en) * 2012-01-31 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET body contact and method of making same
US9148194B2 (en) * 2012-07-07 2015-09-29 Skyworks Solutions, Inc. Radio-frequency switch system having improved intermodulation distortion performance
US20160172527A1 (en) * 2012-12-03 2016-06-16 Sandia Corporation Photodetector with Interdigitated Nanoelectrode Grating Antenna
US9478507B2 (en) * 2013-03-27 2016-10-25 Qualcomm Incorporated Integrated circuit assembly with faraday cage
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