JP2020535647A5 - - Google Patents

Download PDF

Info

Publication number
JP2020535647A5
JP2020535647A5 JP2020517136A JP2020517136A JP2020535647A5 JP 2020535647 A5 JP2020535647 A5 JP 2020535647A5 JP 2020517136 A JP2020517136 A JP 2020517136A JP 2020517136 A JP2020517136 A JP 2020517136A JP 2020535647 A5 JP2020535647 A5 JP 2020535647A5
Authority
JP
Japan
Prior art keywords
bulk semiconductor
dielectric layer
semiconductor wafer
trench isolation
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2020517136A
Other languages
English (en)
Japanese (ja)
Other versions
JP2020535647A (ja
JP7248660B2 (ja
Filing date
Publication date
Priority claimed from US15/975,434 external-priority patent/US10559520B2/en
Application filed filed Critical
Publication of JP2020535647A publication Critical patent/JP2020535647A/ja
Publication of JP2020535647A5 publication Critical patent/JP2020535647A5/ja
Application granted granted Critical
Publication of JP7248660B2 publication Critical patent/JP7248660B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2020517136A 2017-09-29 2018-08-27 裏面シリサイド化によるバルク層転写処理 Active JP7248660B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762565495P 2017-09-29 2017-09-29
US62/565,495 2017-09-29
US15/975,434 2018-05-09
US15/975,434 US10559520B2 (en) 2017-09-29 2018-05-09 Bulk layer transfer processing with backside silicidation
PCT/US2018/048125 WO2019067129A1 (en) 2017-09-29 2018-08-27 MASSIVE LAYER TRANSFER TREATMENT WITH SILICIURATION ON THE REAR PANEL

Publications (3)

Publication Number Publication Date
JP2020535647A JP2020535647A (ja) 2020-12-03
JP2020535647A5 true JP2020535647A5 (enExample) 2021-09-24
JP7248660B2 JP7248660B2 (ja) 2023-03-29

Family

ID=65896847

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020517136A Active JP7248660B2 (ja) 2017-09-29 2018-08-27 裏面シリサイド化によるバルク層転写処理

Country Status (7)

Country Link
US (1) US10559520B2 (enExample)
EP (1) EP3688795B1 (enExample)
JP (1) JP7248660B2 (enExample)
KR (1) KR102675753B1 (enExample)
CN (1) CN111133565B (enExample)
CA (1) CA3073721A1 (enExample)
WO (1) WO2019067129A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10199461B2 (en) * 2015-10-27 2019-02-05 Texas Instruments Incorporated Isolation of circuit elements using front side deep trench etch
US10615252B2 (en) * 2018-08-06 2020-04-07 Nxp Usa, Inc. Device isolation
WO2021102789A1 (en) * 2019-11-28 2021-06-03 Yangtze Memory Technologies Co., Ltd. Local word line driver device, memory device, and fabrication method thereof
US11568052B2 (en) 2020-05-31 2023-01-31 Microsoft Technology Licensing, Llc Undetectable sandbox for malware
CN111883476B (zh) * 2020-09-18 2023-04-14 上海华虹宏力半导体制造有限公司 深沟槽隔离结构的形成方法及半导体器件的形成方法
US11721883B2 (en) * 2021-02-25 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package with antenna and method of forming the same
US20240008290A1 (en) * 2022-06-30 2024-01-04 Intel Corporation Back-end-of-line 2d memory cell
CN120565491B (zh) * 2025-07-31 2025-10-10 杭州富芯半导体有限公司 一种半导体结构、制备方法及半导体器件

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3681862D1 (de) * 1985-08-23 1991-11-14 Siemens Ag Verfahren zur herstellung einer hochsperrenden diodenanordnung auf der basis von a-si:h fuer bildsensorzeilen.
JP3587537B2 (ja) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JP4289146B2 (ja) 2003-03-27 2009-07-01 セイコーエプソン株式会社 三次元実装型半導体装置の製造方法
JP2006108520A (ja) 2004-10-08 2006-04-20 Sharp Corp 半導体装置及び半導体装置の製造方法
JP2006278646A (ja) * 2005-03-29 2006-10-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4869664B2 (ja) 2005-08-26 2012-02-08 本田技研工業株式会社 半導体装置の製造方法
US7285477B1 (en) 2006-05-16 2007-10-23 International Business Machines Corporation Dual wired integrated circuit chips
JP2007335642A (ja) 2006-06-15 2007-12-27 Fujifilm Corp パッケージ基板
TWI382515B (zh) * 2008-10-20 2013-01-11 鈺程科技股份有限公司 無線收發模組
JP4945545B2 (ja) 2008-11-10 2012-06-06 株式会社日立製作所 半導体装置の製造方法
US8299583B2 (en) 2009-03-05 2012-10-30 International Business Machines Corporation Two-sided semiconductor structure
US8455875B2 (en) * 2010-05-10 2013-06-04 International Business Machines Corporation Embedded DRAM for extremely thin semiconductor-on-insulator
US8492241B2 (en) * 2010-10-14 2013-07-23 International Business Machines Corporation Method for simultaneously forming a through silicon via and a deep trench structure
JP2014207252A (ja) 2011-08-17 2014-10-30 株式会社村田製作所 半導体装置およびその製造方法ならびに携帯電話機
US8779559B2 (en) * 2012-02-27 2014-07-15 Qualcomm Incorporated Structure and method for strain-relieved TSV
US20130249011A1 (en) * 2012-03-22 2013-09-26 Texas Instruments Incorporated Integrated circuit (ic) having tsvs and stress compensating layer
US9219032B2 (en) * 2012-07-09 2015-12-22 Qualcomm Incorporated Integrating through substrate vias from wafer backside layers of integrated circuits
US9093462B2 (en) 2013-05-06 2015-07-28 Qualcomm Incorporated Electrostatic discharge diode
CN104241279B (zh) * 2013-06-18 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
CN104241267B (zh) * 2013-06-18 2017-08-01 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
JP2015050339A (ja) 2013-09-02 2015-03-16 ソニー株式会社 半導体装置およびその製造方法
US9252077B2 (en) * 2013-09-25 2016-02-02 Intel Corporation Package vias for radio frequency antenna connections
EP2887387A1 (en) * 2013-12-20 2015-06-24 Nxp B.V. Semiconductor device and associated method
EP2913847B1 (en) * 2014-02-28 2018-04-18 LFoundry S.r.l. Method of fabricating a semiconductor device and semiconductor product
US9368479B2 (en) * 2014-03-07 2016-06-14 Invensas Corporation Thermal vias disposed in a substrate proximate to a well thereof
US9324632B2 (en) * 2014-05-28 2016-04-26 Globalfoundries Inc. Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method
JP2015228473A (ja) 2014-06-03 2015-12-17 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
KR102235613B1 (ko) * 2014-11-20 2021-04-02 삼성전자주식회사 Mos 커패시터를 구비하는 반도체 소자
US9673084B2 (en) * 2014-12-04 2017-06-06 Globalfoundries Singapore Pte. Ltd. Isolation scheme for high voltage device
US9570494B1 (en) * 2015-09-29 2017-02-14 Semiconductor Components Industries, Llc Method for forming a semiconductor image sensor device
US9755029B1 (en) 2016-06-22 2017-09-05 Qualcomm Incorporated Switch device performance improvement through multisided biased shielding
US20180138081A1 (en) * 2016-11-15 2018-05-17 Vanguard International Semiconductor Corporation Semiconductor structures and method for fabricating the same

Similar Documents

Publication Publication Date Title
JP2020535647A5 (enExample)
US9768109B2 (en) Integrated circuits (ICS) on a glass substrate
US9478463B2 (en) Device and method for improving RF performance
US8525354B2 (en) Bond pad structure and fabricating method thereof
JP2019530218A5 (enExample)
JP2020535697A5 (enExample)
CN106373943A (zh) 用于高性能无源‑有源集成电路的方法和装置
CN102301472A (zh) 用于在芯片内放置有源和无源装置的技术
JP2020535647A (ja) 裏面シリサイド化によるバルク層転写処理
WO2014209297A1 (en) Trigate transistor structure with unrecessed field insulator and thinner electrodes over the field insulator
US9812353B2 (en) Semiconductor device and method of manufacturing the same
CN108231747A (zh) 半导体器件及其制作方法、电子装置
KR20090022687A (ko) 반도체 소자의 인덕터 및 그 제조방법
KR102008840B1 (ko) 캐패시터를 포함하는 반도체 소자 및 그 제조 방법
JP2025504616A (ja) 埋め込み電源配線を有する半導体構造体
US20090057825A1 (en) Semiconductor Device and a Method for Fabricating the Same
WO2016048629A1 (en) Devices and methods to reduce stress in an electronic device
US20170162656A1 (en) Integrated cmos wafers
CN108206140B (zh) 半导体器件及其制作方法、电子装置
CN111696961B (zh) 半导体结构及其制作方法
TWI780985B (zh) 半導體結構及其製造方法
KR100842475B1 (ko) 반도체 소자의 스파이럴 인덕터의 형성 방법
US12191154B2 (en) Method for manufacturing semiconductor structure, semiconductor structure, and memory
CN107346746B (zh) 一种半导体器件及其制造方法和电子装置
US20090176332A1 (en) Multi-chip device and method for manufacturing the same