CN111133565B - 利用背侧硅化的本体层转印处理 - Google Patents

利用背侧硅化的本体层转印处理 Download PDF

Info

Publication number
CN111133565B
CN111133565B CN201880062471.1A CN201880062471A CN111133565B CN 111133565 B CN111133565 B CN 111133565B CN 201880062471 A CN201880062471 A CN 201880062471A CN 111133565 B CN111133565 B CN 111133565B
Authority
CN
China
Prior art keywords
dielectric layer
trench isolation
layer
semiconductor wafer
deep trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880062471.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN111133565A (zh
Inventor
S·格科特佩里
G·P·埃姆图尔恩
S·A·法内利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qualcomm Inc
Original Assignee
Qualcomm Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN111133565A publication Critical patent/CN111133565A/zh
Application granted granted Critical
Publication of CN111133565B publication Critical patent/CN111133565B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D
    • H01L25/117—Stacked arrangements of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/20—Inductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0149—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0151—Manufacturing their isolation regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
CN201880062471.1A 2017-09-29 2018-08-27 利用背侧硅化的本体层转印处理 Active CN111133565B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762565495P 2017-09-29 2017-09-29
US62/565,495 2017-09-29
US15/975,434 2018-05-09
US15/975,434 US10559520B2 (en) 2017-09-29 2018-05-09 Bulk layer transfer processing with backside silicidation
PCT/US2018/048125 WO2019067129A1 (en) 2017-09-29 2018-08-27 MASSIVE LAYER TRANSFER TREATMENT WITH SILICIURATION ON THE REAR PANEL

Publications (2)

Publication Number Publication Date
CN111133565A CN111133565A (zh) 2020-05-08
CN111133565B true CN111133565B (zh) 2023-10-13

Family

ID=65896847

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880062471.1A Active CN111133565B (zh) 2017-09-29 2018-08-27 利用背侧硅化的本体层转印处理

Country Status (7)

Country Link
US (1) US10559520B2 (enExample)
EP (1) EP3688795B1 (enExample)
JP (1) JP7248660B2 (enExample)
KR (1) KR102675753B1 (enExample)
CN (1) CN111133565B (enExample)
CA (1) CA3073721A1 (enExample)
WO (1) WO2019067129A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10199461B2 (en) * 2015-10-27 2019-02-05 Texas Instruments Incorporated Isolation of circuit elements using front side deep trench etch
US10615252B2 (en) * 2018-08-06 2020-04-07 Nxp Usa, Inc. Device isolation
WO2021102789A1 (en) * 2019-11-28 2021-06-03 Yangtze Memory Technologies Co., Ltd. Local word line driver device, memory device, and fabrication method thereof
US11568052B2 (en) 2020-05-31 2023-01-31 Microsoft Technology Licensing, Llc Undetectable sandbox for malware
CN111883476B (zh) * 2020-09-18 2023-04-14 上海华虹宏力半导体制造有限公司 深沟槽隔离结构的形成方法及半导体器件的形成方法
US11721883B2 (en) * 2021-02-25 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package with antenna and method of forming the same
US20240008290A1 (en) * 2022-06-30 2024-01-04 Intel Corporation Back-end-of-line 2d memory cell
CN120565491B (zh) * 2025-07-31 2025-10-10 杭州富芯半导体有限公司 一种半导体结构、制备方法及半导体器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013024677A1 (ja) * 2011-08-17 2013-02-21 株式会社村田製作所 半導体装置およびその製造方法ならびに携帯電話機
CN104241267A (zh) * 2013-06-18 2014-12-24 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
CN104425496A (zh) * 2013-09-02 2015-03-18 索尼公司 半导体装置及半导体装置制造方法
CN104733459A (zh) * 2013-12-20 2015-06-24 恩智浦有限公司 半导体器件和相关方法
CN106170853A (zh) * 2014-02-28 2016-11-30 勒丰德里有限公司 制造半导体器件的方法和半导体产品

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3681862D1 (de) * 1985-08-23 1991-11-14 Siemens Ag Verfahren zur herstellung einer hochsperrenden diodenanordnung auf der basis von a-si:h fuer bildsensorzeilen.
JP3587537B2 (ja) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 半導体装置
JP4289146B2 (ja) 2003-03-27 2009-07-01 セイコーエプソン株式会社 三次元実装型半導体装置の製造方法
JP2006108520A (ja) 2004-10-08 2006-04-20 Sharp Corp 半導体装置及び半導体装置の製造方法
JP2006278646A (ja) * 2005-03-29 2006-10-12 Sanyo Electric Co Ltd 半導体装置の製造方法
JP4869664B2 (ja) 2005-08-26 2012-02-08 本田技研工業株式会社 半導体装置の製造方法
US7285477B1 (en) 2006-05-16 2007-10-23 International Business Machines Corporation Dual wired integrated circuit chips
JP2007335642A (ja) 2006-06-15 2007-12-27 Fujifilm Corp パッケージ基板
TWI382515B (zh) * 2008-10-20 2013-01-11 鈺程科技股份有限公司 無線收發模組
JP4945545B2 (ja) 2008-11-10 2012-06-06 株式会社日立製作所 半導体装置の製造方法
US8299583B2 (en) 2009-03-05 2012-10-30 International Business Machines Corporation Two-sided semiconductor structure
US8455875B2 (en) * 2010-05-10 2013-06-04 International Business Machines Corporation Embedded DRAM for extremely thin semiconductor-on-insulator
US8492241B2 (en) * 2010-10-14 2013-07-23 International Business Machines Corporation Method for simultaneously forming a through silicon via and a deep trench structure
US8779559B2 (en) * 2012-02-27 2014-07-15 Qualcomm Incorporated Structure and method for strain-relieved TSV
US20130249011A1 (en) * 2012-03-22 2013-09-26 Texas Instruments Incorporated Integrated circuit (ic) having tsvs and stress compensating layer
US9219032B2 (en) * 2012-07-09 2015-12-22 Qualcomm Incorporated Integrating through substrate vias from wafer backside layers of integrated circuits
US9093462B2 (en) 2013-05-06 2015-07-28 Qualcomm Incorporated Electrostatic discharge diode
CN104241279B (zh) * 2013-06-18 2017-09-01 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
US9252077B2 (en) * 2013-09-25 2016-02-02 Intel Corporation Package vias for radio frequency antenna connections
US9368479B2 (en) * 2014-03-07 2016-06-14 Invensas Corporation Thermal vias disposed in a substrate proximate to a well thereof
US9324632B2 (en) * 2014-05-28 2016-04-26 Globalfoundries Inc. Semiconductor structures with isolated ohmic trenches and stand-alone isolation trenches and related method
JP2015228473A (ja) 2014-06-03 2015-12-17 パナソニックＩｐマネジメント株式会社 半導体装置およびその製造方法
KR102235613B1 (ko) * 2014-11-20 2021-04-02 삼성전자주식회사 Mos 커패시터를 구비하는 반도체 소자
US9673084B2 (en) * 2014-12-04 2017-06-06 Globalfoundries Singapore Pte. Ltd. Isolation scheme for high voltage device
US9570494B1 (en) * 2015-09-29 2017-02-14 Semiconductor Components Industries, Llc Method for forming a semiconductor image sensor device
US9755029B1 (en) 2016-06-22 2017-09-05 Qualcomm Incorporated Switch device performance improvement through multisided biased shielding
US20180138081A1 (en) * 2016-11-15 2018-05-17 Vanguard International Semiconductor Corporation Semiconductor structures and method for fabricating the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013024677A1 (ja) * 2011-08-17 2013-02-21 株式会社村田製作所 半導体装置およびその製造方法ならびに携帯電話機
CN104241267A (zh) * 2013-06-18 2014-12-24 中芯国际集成电路制造(上海)有限公司 一种集成电路及其制造方法
CN104425496A (zh) * 2013-09-02 2015-03-18 索尼公司 半导体装置及半导体装置制造方法
CN104733459A (zh) * 2013-12-20 2015-06-24 恩智浦有限公司 半导体器件和相关方法
CN106170853A (zh) * 2014-02-28 2016-11-30 勒丰德里有限公司 制造半导体器件的方法和半导体产品

Also Published As

Publication number Publication date
US20190103339A1 (en) 2019-04-04
EP3688795C0 (en) 2025-06-18
BR112020005804A2 (pt) 2020-09-24
CN111133565A (zh) 2020-05-08
US10559520B2 (en) 2020-02-11
WO2019067129A1 (en) 2019-04-04
KR20200057714A (ko) 2020-05-26
JP2020535647A (ja) 2020-12-03
EP3688795B1 (en) 2025-06-18
JP7248660B2 (ja) 2023-03-29
EP3688795A1 (en) 2020-08-05
KR102675753B1 (ko) 2024-06-14
CA3073721A1 (en) 2019-04-04

Similar Documents

Publication Publication Date Title
CN111133565B (zh) 利用背侧硅化的本体层转印处理
KR102054924B1 (ko) 듀얼-사이디드 프로세싱을 갖는 로직 회로 블록 레이아웃들
CN109643691B (zh) 背面半导体生长
US10420171B2 (en) Semiconductor devices on two sides of an isolation layer
CN109314097B (zh) 用于反向偏置开关晶体管的方法和装置
US9812580B1 (en) Deep trench active device with backside body contact
US11309352B2 (en) Integrated acoustic filter on complementary metal oxide semiconductor (CMOS) die
CN112236865A (zh) 利用背侧硅化的基于体层转印的开关
US9917062B1 (en) Self-aligned transistors for dual-side processing
US20180068886A1 (en) Porous semiconductor layer transfer for an integrated circuit structure
CN113228253A (zh) 双侧接触开关中的电容平衡
US10043752B2 (en) Substrate contact using dual sided silicidation
US10483392B2 (en) Capacitive tuning using backside gate
BR112020005804B1 (pt) Processamento de transferência de camada em volume com silicetação de fundo
HK40009868B (en) Logic circuit block layouts with dual-sided processing
HK40009868A (en) Logic circuit block layouts with dual-sided processing

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant