JP7157134B2 - 自己整合コンタクトを形成する方法およびデバイス構造体 - Google Patents
自己整合コンタクトを形成する方法およびデバイス構造体 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 53
- 125000006850 spacer group Chemical group 0.000 claims description 147
- 239000000463 material Substances 0.000 claims description 43
- 229910052751 metal Inorganic materials 0.000 claims description 35
- 239000002184 metal Substances 0.000 claims description 35
- 239000002131 composite material Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- 229910021332 silicide Inorganic materials 0.000 claims description 11
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000012212 insulator Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 229910021334 nickel silicide Inorganic materials 0.000 claims 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- -1 SiN) Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000010963 scalable process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Description
Claims (17)
- 自己整合コンタクトを形成する方法であって、
基板の上に多数のゲート側壁スペーサを形成するステップと、
前記ゲート側壁スペーサ同士の間の領域に誘電体を埋め込むステップと、
ゲートが形成される前記ゲート側壁スペーサ同士の間の領域から前記誘電体を選択的に除去することによりゲート・トレンチを形成するステップと、
前記ゲート・トレンチ内に前記ゲートを形成するステップと、
前記自己整合コンタクトが形成される前記ゲート側壁スペーサ同士の間の領域から前記誘電体を選択的に除去することによりコンタクト・トレンチを形成するステップと、
前記コンタクト・トレンチ内に前記自己整合コンタクトを形成するステップと
を含む、方法。 - 前記基板の上にスペーサ材料層を形成するステップと、
前記基板の上に前記ゲート側壁スペーサを形成するために前記スペーサ材料層をパターニングするステップと
をさらに含む、請求項1に記載の方法。 - 側壁イメージ転写(SIT)が、前記基板の上に前記ゲート側壁スペーサを形成するため前記スペーサ材料層をパターニングするのに使用される、請求項2に記載の方法。
- 前記スペーサ材料層の上にマンドレルを形成するステップと、
前記マンドレルの対向する側面の上に複合スペーサを形成するステップであって、前記複合スペーサがi)前記マンドレルの対向する側面上の第1のスペーサとii)前記マンドレルとは反対の前記第1のスペーサの側面上の第2のスペーサとを含む、複合スペーサを形成するステップと
をさらに含む、請求項3に記載の方法。 - 前記複合スペーサに対して選択的に前記マンドレルを除去するステップと、
前記スペーサ材料層をパターニングするのに前記複合スペーサを使用するステップと、
前記第2のスペーサを選択的に除去するステップと、
前記スペーサ材料層をパターニングするのに前記第1のスペーサを使用するステップと
をさらに含む、請求項4に記載の方法。 - ゲートが形成される前記ゲート側壁スペーサ同士の間の前記領域から前記誘電体を選択的に除去する前に、前記自己整合コンタクトが形成される前記ゲート側壁スペーサ同士の間の前記領域を覆うマスクを形成するステップ
をさらに含む、請求項1に記載の方法。 - 前記ゲートが、置換金属ゲートを含み、前記ゲート・トレンチ内に前記ゲートを形成する前記ステップが、前記ゲート・トレンチの中へとゲート誘電体を堆積するステップと、
前記ゲート誘電体の上に仕事関数設定金属を堆積するステップと、
前記仕事関数設定金属の上に充填金属を堆積するステップと
を含む、請求項1に記載の方法。 - 前記ゲート誘電体が、酸化ハフニウムおよび酸化ランタンからなる群から選択されるhigh-k材料を含む、請求項7に記載の方法。
- 前記仕事関数設定金属が、窒化チタン、窒化タンタル、およびタングステンからなる群から選択される、請求項7に記載の方法。
- 前記充填金属がアルミニウムを含む、請求項7に記載の方法。
- 前記自己整合コンタクトがトレンチ・シリサイドを含む、請求項1に記載の方法。
- 前記トレンチ・シリサイドがニッケル・シリサイドを含む、請求項11に記載の方法。
- 前記ゲートのうちの少なくとも1つを選択的に除去するステップをさらに含む、請求項1に記載の方法。
- 前記ゲートのうちで1つおきに選択的に除去するステップをさらに含む、請求項13に記載の方法。
- 選択的に除去される前記ゲートを除いてすべてをマスキングするステップをさらに含む、請求項13に記載の方法。
- 前記ゲートのうちの少なくとも1つが選択的に除去されている前記ゲート・トレンチを絶縁体で埋めるステップをさらに含む、請求項13に記載の方法。
- 前記絶縁体が窒化物材料を含む、請求項16に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/655,547 US10186599B1 (en) | 2017-07-20 | 2017-07-20 | Forming self-aligned contact with spacer first |
US15/655,547 | 2017-07-20 | ||
PCT/IB2018/055243 WO2019016672A1 (en) | 2017-07-20 | 2018-07-16 | FORMATION OF SELF-ALIGNED CONTACTS |
Publications (2)
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CN (1) | CN110892523B (ja) |
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WO2019016672A1 (en) | 2019-01-24 |
GB202001682D0 (en) | 2020-03-25 |
CN110892523B (zh) | 2024-01-05 |
DE112018002948B4 (de) | 2023-01-12 |
JP2020528215A (ja) | 2020-09-17 |
CN110892523A (zh) | 2020-03-17 |
US20190027580A1 (en) | 2019-01-24 |
US10186599B1 (en) | 2019-01-22 |
GB2579487A (en) | 2020-06-24 |
DE112018002948T5 (de) | 2020-04-02 |
GB2579487B (en) | 2021-12-15 |
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