JP7154416B2 - 基板処理装置及び処理条件調整方法 - Google Patents

基板処理装置及び処理条件調整方法 Download PDF

Info

Publication number
JP7154416B2
JP7154416B2 JP2021533945A JP2021533945A JP7154416B2 JP 7154416 B2 JP7154416 B2 JP 7154416B2 JP 2021533945 A JP2021533945 A JP 2021533945A JP 2021533945 A JP2021533945 A JP 2021533945A JP 7154416 B2 JP7154416 B2 JP 7154416B2
Authority
JP
Japan
Prior art keywords
processing
substrate
imaging
adjustment
exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021533945A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021015010A1 (https=
JPWO2021015010A5 (https=
Inventor
真任 田所
正志 榎本
健太郎 山村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of JPWO2021015010A1 publication Critical patent/JPWO2021015010A1/ja
Publication of JPWO2021015010A5 publication Critical patent/JPWO2021015010A5/ja
Application granted granted Critical
Publication of JP7154416B2 publication Critical patent/JP7154416B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0448—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/235—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising optical enhancement of defects or not-directly-visible states
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2021533945A 2019-07-19 2020-07-10 基板処理装置及び処理条件調整方法 Active JP7154416B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019133652 2019-07-19
JP2019133652 2019-07-19
PCT/JP2020/027054 WO2021015010A1 (ja) 2019-07-19 2020-07-10 基板処理装置及び処理条件調整方法

Publications (3)

Publication Number Publication Date
JPWO2021015010A1 JPWO2021015010A1 (https=) 2021-01-28
JPWO2021015010A5 JPWO2021015010A5 (https=) 2022-03-29
JP7154416B2 true JP7154416B2 (ja) 2022-10-17

Family

ID=74193931

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021533945A Active JP7154416B2 (ja) 2019-07-19 2020-07-10 基板処理装置及び処理条件調整方法

Country Status (6)

Country Link
US (1) US11809091B2 (https=)
JP (1) JP7154416B2 (https=)
KR (1) KR20220034879A (https=)
CN (1) CN114127903A (https=)
TW (1) TWI839541B (https=)
WO (1) WO2021015010A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033259A1 (ja) * 2023-08-10 2025-02-13 東京エレクトロン株式会社 基板処理システム、基板処理方法、プログラム、及び記憶媒体

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102874193B1 (ko) * 2020-03-10 2025-10-20 도쿄엘렉트론가부시키가이샤 트랙 시스템 내로의 통합을 위한 장파 적외선 열 센서
JP7431694B2 (ja) * 2020-07-28 2024-02-15 キヤノン株式会社 情報処理装置、膜形成装置、物品の製造方法、およびプログラム
US11738363B2 (en) 2021-06-07 2023-08-29 Tokyo Electron Limited Bath systems and methods thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008141086A (ja) 2006-12-05 2008-06-19 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2017028086A (ja) 2015-07-22 2017-02-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
WO2018225615A1 (ja) 2017-06-05 2018-12-13 東京エレクトロン株式会社 処理条件設定方法、記憶媒体及び基板処理システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000082661A (ja) * 1998-07-02 2000-03-21 Toshiba Corp 加熱装置，加熱装置の評価法及びパタ―ン形成方法
TWI230390B (en) * 2000-07-11 2005-04-01 Tokyo Electron Ltd Apparatus for determining exposure conditions, method for determining exposure conditions and process apparatus
US20040253551A1 (en) * 2003-03-06 2004-12-16 Tsuyoshi Shibata Baking apparatus, substrate heat treatment method and semiconductor device manufacturing method for using baking apparatus, pattern forming method and semiconductor device manufacturing method for using pattern forming method
JP3923023B2 (ja) * 2003-03-06 2007-05-30 株式会社東芝 パターン形成方法および該パターン形成方法を用いた半導体装置の製造方法
JP2008060288A (ja) * 2006-08-31 2008-03-13 Dainippon Screen Mfg Co Ltd 基板処理システム
JP5162314B2 (ja) * 2008-04-25 2013-03-13 東京エレクトロン株式会社 基板の処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
JP2010157671A (ja) * 2009-01-05 2010-07-15 Nikon Corp 基板処理装置、現像装置、並びに露光方法及び装置
JP2010267684A (ja) * 2009-05-12 2010-11-25 Nikon Corp 露光方法及び装置、並びに基板温度調整装置
JP5107372B2 (ja) * 2010-02-04 2012-12-26 東京エレクトロン株式会社 熱処理装置、塗布現像処理システム、熱処理方法、塗布現像処理方法及びその熱処理方法又は塗布現像処理方法を実行させるためのプログラムを記録した記録媒体
JP6286958B2 (ja) * 2013-09-09 2018-03-07 富士通セミコンダクター株式会社 フォトマスクの作製方法、及び半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008141086A (ja) 2006-12-05 2008-06-19 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2017028086A (ja) 2015-07-22 2017-02-02 東京エレクトロン株式会社 基板処理装置、基板処理方法及びコンピュータ読み取り可能な記録媒体
WO2018225615A1 (ja) 2017-06-05 2018-12-13 東京エレクトロン株式会社 処理条件設定方法、記憶媒体及び基板処理システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025033259A1 (ja) * 2023-08-10 2025-02-13 東京エレクトロン株式会社 基板処理システム、基板処理方法、プログラム、及び記憶媒体

Also Published As

Publication number Publication date
KR20220034879A (ko) 2022-03-18
JPWO2021015010A1 (https=) 2021-01-28
TWI839541B (zh) 2024-04-21
WO2021015010A1 (ja) 2021-01-28
TW202107219A (zh) 2021-02-16
US11809091B2 (en) 2023-11-07
CN114127903A (zh) 2022-03-01
US20220252992A1 (en) 2022-08-11

Similar Documents

Publication Publication Date Title
JP7154416B2 (ja) 基板処理装置及び処理条件調整方法
TWI626424B (zh) 膜厚測定裝置、膜厚測定方法及非暫時性電腦記錄媒體
TWI676799B (zh) 基板之檢查方法、基板處理系統及電腦記錄媒體
CN110678962B (zh) 处理条件设定方法、存储介质和基板处理系统
JP7105135B2 (ja) 処理条件補正方法及び基板処理システム
TWI658341B (zh) 基板處理裝置、基板處理方法及記憶媒體
JP7090005B2 (ja) 基板処理装置及び検査方法
JP6956024B2 (ja) 液処理装置及び液膜状態判定方法
JP2009064934A (ja) 処理装置の異常検出方法、処理装置及びコンピュータ読み取り可能な記憶媒体
JP7308337B2 (ja) 異常判定方法及び基板処理システム
WO2007032369A1 (ja) 基板処理装置、基板処理方法、基板処理プログラム、及びそのプログラムを記録したコンピュータ読み取り可能な記録媒体
JP6638796B2 (ja) 基板処理装置、基板処理方法及び記憶媒体
JP2025030171A (ja) 基板処理装置、基板処理方法及び記憶媒体
TW202524080A (zh) 基板檢查裝置、基板檢查方法及記憶媒體

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220105

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220105

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220906

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20221004

R150 Certificate of patent or registration of utility model

Ref document number: 7154416

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250