JP7150504B2 - 固体撮像装置及びその駆動方法 - Google Patents

固体撮像装置及びその駆動方法 Download PDF

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Publication number
JP7150504B2
JP7150504B2 JP2018135004A JP2018135004A JP7150504B2 JP 7150504 B2 JP7150504 B2 JP 7150504B2 JP 2018135004 A JP2018135004 A JP 2018135004A JP 2018135004 A JP2018135004 A JP 2018135004A JP 7150504 B2 JP7150504 B2 JP 7150504B2
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voltage
input node
signal
imaging device
solid
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JP2018135004A
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Japanese (ja)
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JP2020014117A (ja
JP2020014117A5 (enExample
Inventor
文洋 乾
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Canon Inc
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Canon Inc
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Priority to JP2018135004A priority Critical patent/JP7150504B2/ja
Priority to US16/459,354 priority patent/US11076117B2/en
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Publication of JP2020014117A5 publication Critical patent/JP2020014117A5/ja
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44—Electric circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/50—Depth or shape recovery
    • G06T7/55—Depth or shape recovery from multiple images
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/573—Control of the dynamic range involving a non-linear response the logarithmic type
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Theoretical Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2018135004A 2018-07-18 2018-07-18 固体撮像装置及びその駆動方法 Active JP7150504B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2018135004A JP7150504B2 (ja) 2018-07-18 2018-07-18 固体撮像装置及びその駆動方法
US16/459,354 US11076117B2 (en) 2018-07-18 2019-07-01 Solid-state imaging device and method of driving solid-state imaging device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018135004A JP7150504B2 (ja) 2018-07-18 2018-07-18 固体撮像装置及びその駆動方法

Publications (3)

Publication Number Publication Date
JP2020014117A JP2020014117A (ja) 2020-01-23
JP2020014117A5 JP2020014117A5 (enExample) 2021-09-02
JP7150504B2 true JP7150504B2 (ja) 2022-10-11

Family

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Family Applications (1)

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JP2018135004A Active JP7150504B2 (ja) 2018-07-18 2018-07-18 固体撮像装置及びその駆動方法

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US (1) US11076117B2 (enExample)
JP (1) JP7150504B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7327916B2 (ja) * 2018-09-11 2023-08-16 キヤノン株式会社 光電変換装置および機器
US11393870B2 (en) 2018-12-18 2022-07-19 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, and mobile apparatus
JP7555703B2 (ja) 2019-02-25 2024-09-25 キヤノン株式会社 光電変換装置、撮像システム及び移動体
JP6986046B2 (ja) 2019-05-30 2021-12-22 キヤノン株式会社 光電変換装置および機器
JP7345301B2 (ja) 2019-07-18 2023-09-15 キヤノン株式会社 光電変換装置および機器
US12495223B2 (en) * 2023-11-13 2025-12-09 Omnivision Technologies, Inc. Image sensor and optical signal generation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003202264A (ja) 2001-10-16 2003-07-18 Csem Centre Suisse D'electronique & De Microtechnique Sa 光検出器、光電子イメージセンサ及び電磁放射を検出する方法
JP2014060658A (ja) 2012-09-19 2014-04-03 Sony Corp 固体撮像装置、固体撮像装置の駆動方法、及び電子機器

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000196961A (ja) 1998-12-28 2000-07-14 Canon Inc 撮像装置
US6950136B1 (en) 1999-07-22 2005-09-27 Minolta Co., Ltd. Image-sensing apparatus
JP2001094877A (ja) 1999-09-27 2001-04-06 Minolta Co Ltd 固体撮像装置
JP3833125B2 (ja) 2002-03-01 2006-10-11 キヤノン株式会社 撮像装置
US7443427B2 (en) * 2002-08-23 2008-10-28 Micron Technology, Inc. Wide dynamic range linear-and-log active pixel
EP2533289B1 (en) 2004-02-27 2017-08-30 National University Corporation Tohoku Unversity Solid-state imaging device, line sensor, optical sensor and method of operating solid-state imaging device
JP4455435B2 (ja) 2004-08-04 2010-04-21 キヤノン株式会社 固体撮像装置及び同固体撮像装置を用いたカメラ
JP4613305B2 (ja) * 2004-10-19 2011-01-19 国立大学法人静岡大学 埋め込みフォトダイオード構造による撮像装置
JP2007104069A (ja) 2005-09-30 2007-04-19 Omron Corp 撮像装置および撮像方法
US7812301B2 (en) * 2005-10-28 2010-10-12 Sony Corporation Solid-state imaging device, method of driving solid-state imaging device and imaging apparatus
EP1788797B1 (en) 2005-11-18 2013-06-26 Canon Kabushiki Kaisha Solid-state image pickup device
EP1845706A1 (en) * 2006-04-12 2007-10-17 CSEM Centre Suisse d'Electronique et de Microtechnique SA Photo sensor with pinned photodiode and sub-linear response
JP5369779B2 (ja) * 2009-03-12 2013-12-18 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
JP5960961B2 (ja) * 2010-11-16 2016-08-02 キヤノン株式会社 固体撮像素子及び撮像システム
FR2997596B1 (fr) * 2012-10-26 2015-12-04 New Imaging Technologies Sas Structure d'un pixel actif de type cmos
JP6148580B2 (ja) 2013-09-03 2017-06-14 キヤノン株式会社 撮像装置及びカメラ
JP6261361B2 (ja) 2014-02-04 2018-01-17 キヤノン株式会社 固体撮像装置およびカメラ
JP6738200B2 (ja) 2016-05-26 2020-08-12 キヤノン株式会社 撮像装置
JP7013119B2 (ja) 2016-07-21 2022-01-31 キヤノン株式会社 固体撮像素子、固体撮像素子の製造方法、及び撮像システム
JP2018152696A (ja) * 2017-03-13 2018-09-27 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置、その駆動方法および電子機器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003202264A (ja) 2001-10-16 2003-07-18 Csem Centre Suisse D'electronique & De Microtechnique Sa 光検出器、光電子イメージセンサ及び電磁放射を検出する方法
JP2014060658A (ja) 2012-09-19 2014-04-03 Sony Corp 固体撮像装置、固体撮像装置の駆動方法、及び電子機器

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US20200029044A1 (en) 2020-01-23
JP2020014117A (ja) 2020-01-23
US11076117B2 (en) 2021-07-27

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