JP7143211B2 - 温度偏差特性が改善された基板加熱装置 - Google Patents
温度偏差特性が改善された基板加熱装置 Download PDFInfo
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- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heater elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
- H05B3/283—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material the insulating material being an inorganic material, e.g. ceramic
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/014—Heaters using resistive wires or cables not provided for in H05B3/54
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B2203/00—Aspects relating to Ohmic resistive heating covered by group H05B3/00
- H05B2203/037—Heaters with zones of different power density
Description
Claims (7)
- 基板を加熱する基板加熱装置であって、
基板を支持する胴体部、
前記胴体部の内部領域に位置する第1発熱体、
前記内部領域を囲む外部領域に位置する第2発熱体、
前記胴体部の内部領域を横切って前記第2発熱体に電流を送給する第3発熱体、及び
前記第2発熱体と前記第3発熱体とを電気的に接続する連結部材を含んで構成され、
前記第2発熱体、前記第3発熱体及び前記連結部材はいずれも同一材質で構成され、
前記第3発熱体を構成するワイヤーの直径は、前記第2発熱体を構成するワイヤーの直径より厚く、
前記連結部材は、前記第2発熱体及び前記第3発熱体を構成する互いに直径が異なるワイヤーを締まりばめして固定する開口を含み、
前記基板加熱装置の中間領域及び前記中間領域と垂直した領域に関して、前記胴体部の中心点を通過する前記中間領域の中心軸での前記第1発熱体及び前記第3発熱体の発熱による表面温度の平均値は、前記第3発熱体間の離隔距離または前記第3発熱体と前記第1発熱体との間の離隔距離を調節することにより前記中間領域と垂直した領域の中心軸での表面温度の平均値と実質的に同じであり、
前記胴体部の中心点に対して前記中間領域と対称をなす対称領域に関して、前記中間領域の前記第1発熱体は、前記対称領域の前記第1発熱体と実質的に同じ対称構造を有する、基板加熱装置。 - 基板を加熱する基板加熱装置であって、
基板を支持する胴体部、
前記胴体部の内部領域に位置する第1発熱体、
前記内部領域を囲む外部領域に位置する第2発熱体、及び
前記胴体部の内部領域を横切って前記第2発熱体に電流を送給する第3発熱体を含んで構成され、
前記第2発熱体と前記第3発熱体とは同一材質の一つのワイヤーで構成され、前記第2発熱体と前記第3発熱体との連結部分はテーパリング(tapering)形状を有し、
前記第3発熱体を構成するワイヤーの直径は、前記第2発熱体を構成するワイヤーの直径より厚く、
前記基板加熱装置の中間領域及び前記中間領域と垂直した領域に関して、前記胴体部の中心点を通過する前記中間領域の中心軸での前記第1発熱体及び前記第3発熱体の発熱による表面温度の平均値は、前記第3発熱体間の離隔距離または前記第3発熱体と前記第1発熱体との間の離隔距離を調節することにより前記中間領域と垂直した領域の中心軸での表面温度の平均値と実質的に同じであり、
前記胴体部の中心点に対して前記中間領域と対称をなす対称領域に関して、前記中間領域の前記第1発熱体は、前記対称領域の前記第1発熱体と実質的に同じ対称構造を有する、基板加熱装置。 - 基板を加熱する基板加熱装置であって、
基板を支持する胴体部、
前記胴体部の内部領域に位置する第1発熱体、
前記内部領域を囲む外部領域に位置する第2発熱体、及び
前記胴体部の内部領域を横切って前記第2発熱体に電流を送給する第3発熱体を含んで構成され、
前記第2発熱体と前記第3発熱体とは同一材質で構成され、
前記第2発熱体と前記第3発熱体との連結部分は溶接(welding)を利用して接合され、
前記第3発熱体を構成するワイヤーの直径は、前記第2発熱体を構成するワイヤーの直径より厚く、
前記基板加熱装置の中間領域及び前記中間領域と垂直した領域に関して、前記胴体部の中心点を通過する前記中間領域の中心軸での前記第1発熱体及び前記第3発熱体の発熱による表面温度の平均値は、前記第3発熱体間の離隔距離または前記第3発熱体と前記第1発熱体との間の離隔距離を調節することにより前記中間領域と垂直した領域の中心軸での表面温度の平均値と実質的に同じであり、
前記胴体部の中心点に対して前記中間領域と対称をなす対称領域に関して、前記中間領域の前記第1発熱体は、前記対称領域の前記第1発熱体と実質的に同じ対称構造を有する、基板加熱装置。 - 前記第3発熱体は前記胴体部の中心点を含む中心領域から前記外部領域に前記内部領域を横切る中間領域に位置し、
前記中間領域には前記第1発熱体が位置しない、請求項1~3のいずれか1項に記載の基板加熱装置。 - 前記胴体部の中心点を通過する前記中間領域の中心軸を基準に、前記第1発熱体、前記第2発熱体及び前記第3発熱体は対称の形状をなす、請求項4に記載の基板加熱装置。
- 前記胴体部の中心点を基準に前記中間領域と対称をなす対称領域に対し、
前記胴体部の中心点を通過する前記中間領域の中心軸での前記第1発熱体及び前記第3発熱体の発熱による表面温度の平均値は、
前記胴体部の中心点を通過する前記対称領域の中心軸での前記第1発熱体の発熱による表面温度の平均値と対比して所定の誤差範囲内にある、請求項4に記載の基板加熱装置。 - 前記胴体部の中心点を基準に前記中間領域と対称をなす対称領域に対し、
前記胴体部の中心点を通過する前記中間領域の中心軸での前記第1発熱体及び前記第3発熱体の発熱による表面温度の最大値と最小値との差は、
前記胴体部の中心点を通過する前記対称領域の中心軸での前記第1発熱体の発熱による表面温度の最大値と最小値との差より小さいかまたは同じである、請求項4に記載の基板加熱装置。
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KR1020150139849A KR102348108B1 (ko) | 2015-10-05 | 2015-10-05 | 온도 편차 특성이 개선된 기판 가열 장치 |
KR10-2015-0139849 | 2015-10-05 | ||
PCT/KR2016/010960 WO2017061734A1 (ko) | 2015-10-05 | 2016-09-30 | 온도 편차 특성이 개선된 기판 가열 장치 |
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US10345802B2 (en) * | 2016-02-17 | 2019-07-09 | Lam Research Corporation | Common terminal heater for ceramic pedestals used in semiconductor fabrication |
KR20230058534A (ko) | 2018-03-23 | 2023-05-03 | 엔지케이 인슐레이터 엘티디 | 멀티 존 히터 |
CN108711556B (zh) * | 2018-05-25 | 2020-06-19 | 北京北方华创微电子装备有限公司 | 去气腔室以及去气方法 |
KR102110410B1 (ko) * | 2018-08-21 | 2020-05-14 | 엘지전자 주식회사 | 전기 히터 |
KR102608397B1 (ko) * | 2018-10-16 | 2023-12-01 | 주식회사 미코세라믹스 | 미들 영역 독립 제어 세라믹 히터 |
KR102630201B1 (ko) * | 2019-01-23 | 2024-01-29 | 주식회사 미코세라믹스 | 세라믹 히터 |
JP7252378B2 (ja) * | 2020-02-03 | 2023-04-04 | 京セラ株式会社 | 試料保持具 |
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JP2003272805A (ja) | 2002-03-18 | 2003-09-26 | Ngk Insulators Ltd | セラミックヒーター |
JP6139870B2 (ja) | 2012-12-04 | 2017-05-31 | キヤノン株式会社 | 露光方法、露光装置および物品の製造方法 |
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US11133202B2 (en) | 2021-09-28 |
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WO2017061734A1 (ko) | 2017-04-13 |
JP2018537802A (ja) | 2018-12-20 |
KR20170040617A (ko) | 2017-04-13 |
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CN108028199A (zh) | 2018-05-11 |
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